TOSHIBA MIG75Q201H

MIG75Q201H
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG75Q201H
High Power Switching Applications
Motor Control Applications
l Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current,
under-voltage & over-temperature) in one package.
l The electrodes are isolated from case.
l High speed type IGBT
: VCE (sat) = 3.5 V (Max)
toff = 2.5 µs (Max)
trr = 0.21 µs (Max)
l Package dimensions : TOSHIBA 2-136A1A
l Weight :
Equivalent Circuit
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MIG75Q201H
Maximum Ratings (Tj = 25°C )
Stage
Characteristic
Condition
Supply voltage
P-N power terminal
Collector-emitter voltage
Inverter
―
VCC
900
V
VCES
1200
V
IC
75
A
Forward current
Tc = 25°C, DC
IF
75
A
Collector power dissipation
Tc = 25°C
PC
600
W
Tj
150
°C
VCC
900
V
VCES
1200
V
IC
50
A
VR
1200
V
―
P-N power terminal
Collector-emitter voltage
―
Collector current
Tc = 25°C, DC
Reverse voltage
―
Forward current
Tc = 25°C, DC
IF
50
A
Collector power dissipation
Tc = 25°C
PC
400
W
―
Tj
150
°C
Control supply voltage
VD-GND terminal
VD
20
V
Input voltage
IN-GND terminal
VIN
20
V
Fault output voltage
FO-GND (L) terminal
VFO
20
V
Fault output current
FO sink current
IFO
14
mA
Junction temperature
Module
Unit
Tc = 25°C, DC
Supply voltage
Control
Ratings
Collector current
Junction temperature
Brake
Symbol
Operating temperature
―
TC
−20 ~ +100
°C
Storage temperature range
―
Tstg
−40 ~ +125
°C
VISO
2500
V
―
3
Nm
Isolation voltage
AC 1 minute
Screw torque
M5
Electrical Characteristics (Tj = 25°C)
a.
Inverter Stage
Characteristic
Collector cut-off current
Collector-emitter saturation
voltage
Forward voltage
Symbol
ICEX
VCE (sat)
VF
Test Condition
VCE = 1200V
VD = 15 V, IC = 75 A
VIN = 3 V → 0 V
Min
Typ.
Max
Tj = 25°C
―
―
1
Tj = 125°C
―
―
20
Tj = 25°C
―
2.7
3.5
Tj = 125°C
―
2.6
―
―
2.0
2.5
0.8
1.5
2.2
―
0.3
0.6
―
0.14
0.21
―
1.5
2.5
―
0.25
0.5
IF = 75A
ton
tc (on)
Switching time
trr
VCC = 600 V, IC = 75 A
VD = 15 V, VIN = 3 V
Inductive load
toff
0V
(Note 1)
tc (off)
2
Unit
mA
V
V
µs
2001-05-29
MIG75Q201H
b.
Brake Stage
Characteristic
Symbol
Collector cut-off current
Collector-emitter saturation
voltage
ICEX
VCE (sat)
Test Condition
VCE = 1200V
VD = 15 V, IC = 50 A
VIN = 3 V → 0 V
Reverse current
IR
VR = 1200 V
Forward voltage
VF
IF = 50A
Min
Typ.
Max
Tj = 25°C
―
―
1
Tj = 125°C
―
―
20
Tj = 25°C
―
2.7
3.5
Tj = 125°C
―
2.6
―
―
―
1
―
―
20
―
2.0
2.7
0.8
1.5
2.2
―
0.5
1.0
―
0.30
0.45
―
1.5
2.5
―
0.3
0.6
Min
Typ.
Max
―
20
30
―
80
120
0.9
1.1
1.3
8
10
12
―
―
1
105
150
―
70
100
―
157
225
―
105
150
―
―
10
―
111
118
125
93
100
107
11.3
12.0
12.7
11.8
12.5
13.2
1
2
3
ton
tc (on)
Switching time
trr
VCC = 600 V, IC = 50 A
VD = 15 V, VIN = 3 V
Inductive load
0V
toff
(Note 1)
tc (off)
c.
Unit
mA
V
mA
V
µs
Control Stage (Tj = 25°C)
Characteristic
Control circuit
current
High side
ID (H)
Low side
ID (L)
Input-on signal voltage
Fault output
current
Over current
protection
trip level
Short circuit
protection
trip level
Control supply
under voltage
protection
VIN (on)
Protection
IFO (on)
Normal
IFO (off)
Inverter
Brake
Inverter
Brake
Over current cut-off time
Over
temperature
protection
Symbol
VD = 15 V
VD = 15 V, IC = 75 mA
―
OC
VD = 15 V, Tj = 125°C
SC
VD = 15 V, Tj = 125°C
toff (OC)
Trip level
OT
Reset level
OTr
Trip level
UV
Reset level
UVr
Fault output pulse width
Test Condition
tFO
VD = 15 V
Case temperature
―
VD = 15 V
3
Unit
mA
V
mA
A
A
µs
°C
V
ms
2001-05-29
MIG75Q201H
d.
Thermal Resistance (Tj = 25°C)
Characteristic
Junction to case thermal
resistance
Case to fin thermal
resistance
Symbol
Rth (j-c)
Rth (c-f)
Test Condition
Min
Typ.
Max
Inverter IGBT
―
―
0.208
Inverter FRD
―
―
0.50
Brake IGBT
―
―
0.312
Brake FRD
―
―
1.00
Compound is applied
―
0.04
―
Unit
°C / W
°C / W
Note 1: Switching time test circuit & timing chart
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Package Dimensions: TOSHIBA 2-136A1A
Unit: mm
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MIG75Q201H
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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