MG300Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS60A(1200V/300A 2in1) High Power Switching Applications Motor Control Applications · Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) · The electrodes are isolated from case. · Low thermal resistance · VCE (sat) = 2.4 V (typ.) Equivalent Circuit Ｃ1 5 6 FO 7 E1/C2 4 OT 1 2 FO 3 E2 Signal terminal 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 1 2002-09-06 MG300Q2YS60A Package Dimensions: 2-123C1B 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 5 6 3 4 1 2 25.4 ± 0.6 8 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 2.54 7 2.54 Signal Terminal Layout 2.54 Weight: 375 g 2 2002-09-06 MG300Q2YS60A Maximum Ratings (Ta = 25°C) Stage Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±20 V DC IC 300 1 ms ICP 600 DC IF 300 1 ms IFM 600 Collector power dissipation (Tc = 25°C) PC 2800 W Control voltage (OT) VD 20 V Fault input voltage VFO 20 V Fault input current IFO 20 mA Tj 150 °C Storage temperature range Tstg -40~125 °C Operation temperature range Tope -20~100 °C Isolation voltage Visol 2500 (AC 1 min) V ¾ 3 (M5) N･m Collector current Inverter Forward current Control Junction temperature Module Screw torque A A Electrical Characteristics (Tj = 25°C) 1. Inverter Stage Characteristics Min Typ. Max Unit VGE = ±20 V, VCE = 0 ¾ ¾ +3/-4 mA VGE = +10 V, VCE = 0 ¾ ¾ 100 nA ICES VCE = 1200 V, VGE = 0 ¾ ¾ 1.0 mA Gate-emitter cut-off voltage VGE (off) VCE = 5 V, IC = 300 mA 6.0 7.0 8.0 V Tj = 25°C ¾ 2.8 VCE (sat) VGE = 15 V, IC = 300 A 2.4 Collector-emitter saturation voltage Tj = 125°C ¾ ¾ 3.2 ¾ 21000 ¾ 0.10 ¾ 1.00 ¾ ¾ 2.00 ¾ ¾ 0.50 ¾ ¾ 0.50 ¾ 2.1 2.6 V Min Typ. Max Unit 360 ¾ ¾ A 100 ¾ 125 °C ¾ ¾ 8 ms Gate leakage current Collector cut-off current Input capacitance IGES Cies Turn-on delay time Switching time Symbol Turn-off time Fall time Test Condition VCE = 10 V, VGE = 0, f = 1 MHz td (on) toff tf Reverse recovery time trr Forward voltage VF VCC = 600 V, IC = 300 A VGE = ±15 V, RG = 6.8 W (Note 1) IF = 300 A V pF ms Note 1: Switching time test circuit & timing chart 2. Control (Tc = 25°C) Characteristics Symbol Fault output current OC Over temperature OT Fault output delay time td (Fo) Test Condition VGE = 15 V ¾ VCC = 600 V, VGE = ±15 V 3 2002-09-06 MG300Q2YS60A 3. Module (Tc = 25°C) Characteristics Symbol Junction to case thermal resistance Rth (j-c) Case to fin thermal resistance Rth (c-f) Test Condition Min Typ. Max Inverter IGBT stage ¾ ¾ 0.044 Inverter FRD stage ¾ ¾ 0.068 With silicon compound ¾ 0.013 ¾ Unit °C/W °C/W Switching Time Test Circuit RG IF -VGE VCC IC L RG Timing Chart 90% VGE 10% 90% Irr Irr 20% Irr 90% IC trr 10% 10% td (on) td (off) 4 tf 2002-09-06 MG300Q2YS60A Remark <Short circuit capability condition> l Short circuit capability is 6 ms after fault output signal. Please keep following condition to use fault output signal. · VCC < = 750 V < VGE < · 14.8 V = = 17.0 V > · RG = 6.8 W · Tj < = 125°C <Gate voltage> l To use this product, VGE must be provided higher than 14.8 V. In case VGE is less than 14.8 V, fault signal FO may not be output even under error conditions. 5 2002-09-06 MG300Q2YS60A IC – VCE IC – VCE 600 600 Common emitter Common emitter 15 V Tj = 25°C Tj = 125°C 12 V IC 400 Collector current Collector current IC (A) VGE = 20 V 15 V VGE = 20 V 500 12 V (A) 500 300 10 V 200 9V 100 400 10 V 300 200 9V 100 8V 8V 0 0 1 2 3 Collector-emitter voltage 4 VCE 0 0 5 (V) 1 2 Collector-emitter voltage VCE – VGE (V) Tj = 125°C 10 VCE 10 VCE (V) (V) Common emitter Tj = 25°C 8 Collector-emitter voltage 8 Collector-emitter voltage VCE 5 12 Common emitter 6 IC = 600 A 4 300 A 2 6 IC = 600 A 4 300 A 2 150 A 150 A 0 0 5 10 15 Gate-emitter voltage VGE 0 0 20 (V) 5 10 15 Gate-emitter voltage VGE VCE – VGE 20 (V) IC – VGE 12 600 Common emitter Common emitter Tj = -40°C VCE = 5 V 500 (A) 10 VCE (V) 4 VCE – VGE 12 Collector current IC 8 Collector-emitter voltage 3 6 4 IC = 600 A 300 A 2 400 300 25°C 200 Tj = 125°C 100 -40°C 150 A 0 0 5 10 Gate-emitter voltage VGE 15 0 0 20 (V) 4 8 Gate-emitter voltage VGE 6 12 (V) 2002-09-06 MG300Q2YS60A IF – VF VCE, VGE – QG Common cathode (V) VGE = 0 V 800 16 400 Collector-emitter voltage Forward current IF (A) VCE 500 20 Common emitter RL = 2 W Tj = 25°C 300 125°C 200 Tj = 25°C -40°C 100 0 0 1 2 3 Forward voltage 4 VF 12 600 V 400 200 V 8 VCE = 0 V 4 200 0 0 5 400 V 600 500 1000 (V) 1500 Charge QG (V) 1000 Gate-emitter voltage VGE 600 0 2500 2000 (nC) Eon, Eoff – RG SW time – RG 10000 1000 Common emitter 1000 ton td (off) SW loss Eon, Eoff SW time (ns) (mJ) toff td (on) tr 100 tf Common emitter VCC = 600 V IC = 300 A 10 0 VCC = 600 V IC = 300 A Tj = 25°C VGE = ±15 V Tj = 125°C Eon 100 Eoff Tj = 25°C VGE = ±15 V Tj = 125°C 5 10 15 20 Gate resistance RG 10 0 25 5 (9) 10 15 20 Gate resistance RG 25 (9) Eon, Eoff – IC SW time – IC 10000 100 1000 (mJ) td (off) SW loss Eon, Eoff SW time (ns) toff ton td (on) tf 100 Common emitter tr 10 0 50 Eoff Eon 10 Common emitter VCC = 600 V RG = 6.8 W Tj = 25°C VCC = 600 V RG = 6.8 W VGE = ±15 V Tj = 125°C VGE = ±15 V 100 150 Collector current 200 IC 250 1 0 300 (A) 50 100 150 Collector current 7 Tj = 25°C Tj = 125°C 200 IC 250 300 (A) 2002-09-06 MG300Q2YS60A Irr, trr – IF Edsw – IF (mJ) 100 trr Reverse recovery loss Edsw Reverse recovery time trr (ns) Reverse recovery current Irr (A) 1000 100 Irr Common cathode 10 0 50 VCC = 600 V RG = 6.8 W Tj = 25°C VGE = ±15 V Tj = 125°C 100 150 200 Forward current IF 250 10 1 Common cathode VCC = 600 V RG = 6.8 W 0.1 0 300 50 (A) 100 150 200 Forward current C – VCE IF 1000 IC max (pulsed)* 100 ms* IC (pF) Collector current 10000 Coes 1000 Common emitter VGE = 0 V f = 1 MHz Cres Tj = 25°C 0.1 1 10 Collector-emitter voltage 300 (A) IC max (continuous) (A) Cies 100 0.01 250 Safe-operating area 100000 Capacitance C Tj = 25°C Tj = 125°C VGE = ±15 V VCE 100 50 ms* 100 *: Single nonrepetitive pulse Tc = 25°C Curves must 10 be derated linearly with increase in temperature. 3 1 10 (V) 1 ms* DC operation 100 1000 Collector-emitter voltage VCE 10000 (V) Reverse bias SOA 1000 Rth – tw 1 (°C/W) 100 Rth (j-c) Collector current IC (A) Tc = 25°C 10 Diode stage 0.1 Transistor stage 0.01 Tj < = 125°C RG = 6.8 W VGE = ±15 V 1 0 400 800 Collector-emitter voltage 0.001 0.001 1200 VCE (V) 0.01 0.1 Pulse width 8 1 tw 10 (s) 2002-09-06 MG300Q2YS60A RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 9 2002-09-06