MG400Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q2YS60A High Power Switching Applications Motor Control Applications · Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) · The electrodes are isolated from case. · Low thermal resistance. · VCE (sat) = 2.4 V (typ.) Equivalent Circuit Ｃ1 5 6 FO 7 E1/C2 4 OT 1 2 FO 3 E2 Signal terminal 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 1 2002-09-06 MG400Q2YS60A Package Dimensions: 2-123C1B 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 5 6 3 4 1 2 25.4 ± 0.6 8 2.54 7 2.54 Signal Terminal Layout 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 2.54 Weight: 375 g 2 2002-09-06 MG400Q2YS60A Maximum Ratings (Ta = 25°C) Stage Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±20 V DC IC 400 1 ms ICP 800 DC IF 400 1 ms IFM 800 Collector power dissipation (Tc = 25°C) PC 3750 W Control voltage (OT) VD 20 V Fault input voltage VFO 20 V Fault input current IFO 20 mA Tj 150 °C Storage temperature range Tstg -40~125 °C Operation temperature range Tope -20~100 °C Isolation voltage Visol 2500 (AC 1 min) V ¾ 3 (M5) N･m Collector current Inverter Forward current Control Junction temperature Module Screw torque A A Electrical Characteristics (Tj = 25°C) 1. Inverter stage Characteristics Min Typ. Max Unit VGE = ±20 V, VCE = 0 ¾ ¾ +3/-4 mA VGE = +10 V, VCE = 0 ¾ ¾ 100 nA ICES VCE = 1200 V, VGE = 0 ¾ ¾ 1.0 mA Gate-emitter cut-off voltage VGE (off) VCE = 5 V, IC = 400 mA 6.0 7.0 8.0 V Tj = 25°C ¾ 2.8 VCE (sat) VGE = 15 V, IC = 400 A 2.4 Collector-emitter saturation voltage Tj = 125°C ¾ ¾ 3.2 ¾ 31000 ¾ 0.10 ¾ 1.00 ¾ ¾ 2.00 ¾ ¾ 0.50 ¾ ¾ 0.50 ¾ 2.4 2.8 V Min Typ. Max Unit 480 ¾ ¾ A 100 ¾ 125 °C ¾ ¾ 8 ms Gate leakage current Collector cut-off current Input capacitance IGES Cies Turn-on delay time Switching time Symbol Turn-off time Fall time td (on) toff tf Reverse recovery time trr Forward voltage VF Test Condition VCE = 10 V, VGE = 0, f = 1 MHz VCC = 600 V, IC = 400 A VGE = ±15 V, RG = 5.1 W (Note 1) (See page 4) IF = 400 A V pF ms Note 1: Switching time test circuit & timing chart 2. Control (Tc = 25°C) Characteristics Symbol Fault output current OC Over temperature OT Fault output delay time td (Fo) Test Condition VGE = 15 V ¾ VCC = 600 V, VGE = ±15 V 3 2002-09-06 MG400Q2YS60A 3. Module (Tc = 25°C) Characteristics Symbol Junction to case thermal resistance Rth (j-c) Case to fin thermal resistance Rth (c-f) Test Condition Min Typ. Max Inverter IGBT stage ¾ ¾ 0.033 Inverter FRD stage ¾ ¾ 0.068 With silicon compound ¾ 0.013 ¾ Unit °C/W °C/W Switching Time Test Circuit RG IF -VGE VCC IC L RG Timing Chart 90% VGE 10% 90% Irr Irr 20% Irr 90% IC trr 10% 10% td (on) td (off) 4 tf 2002-09-06 MG400Q2YS60A Remark <Short circuit capability condition > l Short circuit capability is 6 ms after fault output signal. Please keep following condition to use fault output signal. · VCC < = 750 V < VGE < · 14.8 V = = 17.0 V > · RG = 5.1 W · Tj < = 125°C <Gate voltage > l To use this product, VGE must be provided higher than 14.8 V In case VGE is less than 14.8 V, fault signal FO may not be output even under error conditions. <For parallel use> l For parallel use of this product, please use the same rank for both VCE (sat) and VF among IGBT in parallel without fail. VCE (sat) VF Min Max 24 E 2.1 2.4 26 F 2.3 2.6 28 G 2.5 2.8 5 2002-09-06 MG400Q2YS60A IC – VCE IC – VCE 800 800 VGE = 20 V (A) VGE = 20 V 12 V 600 IC 15 V 400 Collector current Collector current 15 V Tj = 125°C 600 IC (A) Tj = 25°C Common emitter 12 V Common emitter 10 V 200 10 V 400 9V 200 9V 8V 8V 0 0 1 2 3 Collector-emitter voltage 4 VCE 0 0 5 (V) 1 2 Collector-emitter voltage VCE – VGE VCE 5 (V) 12 Common emitter Common emitter (V) Tj = 25°C Tj = 125°C 10 VCE 10 VCE (V) 4 VCE – VGE 12 8 Collector-emitter voltage 8 Collector-emitter voltage 3 6 IC = 800 A 4 400 A 2 6 IC = 800 A 4 400 A 2 200 A 200 A 0 0 5 10 Gate-emitter voltage VGE 15 0 0 20 (V) 5 10 15 Gate-emitter voltage VGE VCE – VGE 20 (V) IC – VGE 12 800 Common emitter Tj = -40°C VCE = 5 V (A) 10 VCE (V) Common emitter IC Collector current Collector-emitter voltage 8 600 6 IC = 800 A 4 400 A 400 25°C 200 Tj = 125°C 2 -40°C 200 A 0 0 5 10 Gate-emitter voltage VGE 15 0 0 20 (V) 4 8 Gate-emitter voltage VGE 6 12 (V) 2002-09-06 MG400Q2YS60A IF – VF VCE, VGE – QG (V) Common cathode VCE Collector-emitter voltage Forward current IF (A) VGE = 0 V 600 400 Tj = 125°C -40°C 200 25°C 0 0 1 2 3 Forward voltage VF 4 800 20 Common emitter RL = 1.5 W Tj = 25°C 400 V 600 12 600 V 200 V 400 8 VCC = 0 V 4 200 0 0 5 16 1000 (V) 0 3000 2000 Charge QG (V) 1000 Gate-emitter voltage VGE 800 (nC) Eon, Eoff – RG SW time – RG 10000 1000 Common emitter (mJ) VCC = 600 V IC = 400 A Tj = 25°C VGE = ±15 V Tj = 125°C 1000 SW loss Eon, Eoff SW time (ns) toff td (off) ton td (on) tr 100 tf Common emitter VCC = 600 V IC = 400 A VGE = ±15 V 10 0 5 10 Tj = 25°C Tj = 125°C 15 Gate resistance RG 100 Eoff Eon 10 0 20 5 (9) 10 15 Gate resistance RG 20 (9) Eon, Eoff – IC SW time – IC 10000 100 (mJ) toff tf ton 100 td (on) Common emitter VCC = 600 V RG = 5.1 W VGE = ±15 V tr 10 0 SW loss Eon, Eoff SW time (ns) td (off) Eoff 1000 100 200 Collector current Tj = 25°C Tj = 125°C 300 IC 10 Eon Common emitter VCC = 600 V RG = 5.1 W Tj = 25°C Tj = 125°C VGE = ±15 V 1 0 400 (A) 100 200 Collector current 7 300 IC 400 (A) 2002-09-06 MG400Q2YS60A Irr, trr – IF Edsw – IF 1000 100 (mJ) Reverse recovery loss Edsw Reverse recovery time trr (ns) Reverse recovery current Irr (A) Common cathode trr 100 Irr Common cathode VCC = 600 V RG = 5.1 W Tj = 25°C Tj = 125°C VGE = ±15 V 10 0 100 200 300 Forward current IF VCC = 600 V RG = 5.1 W VGE = ±15 V 10 1 0 400 Tj = 25°C Tj = 125°C 100 (A) 300 Forward current C – VCE IF 400 (A) Safe-operating area 100000 1000 IC max (pulsed)* IC (pF) (A) Cies Collector current 10000 Capacitance C 200 Coes 1000 Common emitter Cres VGE = 0 V f = 1 MHz IC max (continuous) 10 Tj = 25°C 100 0.01 0.1 1 10 Collector-emitter voltage VCE *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 1 1 100 50 ms* 100 ms* 100 10 (V) 1 ms* 100 1000 Collector-emitter voltage VCE 10000 (V) Reverse bias SOA Rth – tw 800 1 (°C/W) 600 400 Rth (j-c) Collector current IC (A) TC = 25°C 200 0 0 Diode stage 0.1 Transistor stage 0.01 Tj < = 125°C RG = 5.1 W VGE = ±15 V 400 800 Collector-emitter voltage 0.001 0.001 1200 VCE (V) 0.01 0.1 Pulse width 8 1 tw 10 (s) 2002-09-06 MG400Q2YS60A RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 9 2002-09-06