ES1A - ES1J 1.0AMP. Surface Mount Super Fast Rectifiers SMA/DO-214AC Pb RoHS COMPLIANCE Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain rellef Ideal for automated placement Easy pick and place Super fast recovery time for high efficiency Glass passivated chip junction High temperature soldering: 260℃/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 Qualified as per AEC-Q101 Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Cases: Molded plastic Dimensions in inches and (millimeters) Marking Diagram Terminals: Pure tin plated, lead free ES1X = Specific Device Code Polarity: Indicated by cathode band G = Green Compound Packing: 12mm tape per EIA STD RS-481 Y = Year Weight: 0.064 grams M = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% ES 1B 100 ES 1C 150 ES 1D 200 ES 1F 300 ES 1G 400 ES 1H 500 ES 1J 600 Maximum Recurrent Peak Reverse Voltage VRRM ES 1A 50 Maximum RMS Voltage VRMS 35 70 105 140 210 280 350 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 500 600 V Maximum Average Forward Rectified Current IF(AV) 1 A Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) IFSM 30 A Type Number Symbol Maximum Instantaneous Forward Voltage (Note 1) @1A VF Maximum DC Reverse Current at Rated @ T A=25 ℃ DC Blocking Voltage @ T A=125 ℃ IR Maximum Reverse Recovery Time (Note 2) Trr Typical Junction Capacitance (Note 3) Cj 0.95 1.3 Units V V 1.7 5 uA 100 uA 35 16 nS 18 pF Maximum Thermal Resistance RθJA RθJL 85 35 Operating Temperature Range TJ - 55 to + 150 O C TSTG - 55 to + 150 O C Storage Temperature Range O Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I F=0.5A, I R=1.0A, I RR=0.25A Note 3: Measured at 1 MHz and Applied V R=4.0 Volts Version:G11 C/W RATINGS AND CHARACTERISTIC CURVES (ES1A THRU ES1J) FIG. 2- TYPICAL INSTANTANEOUS FORWARD CHARACTERISRICS FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 100 TA=25℃ Pulse Width=300us 1% Duty Cycle 1 0.6 0.4 0.2 0 80 90 100 110 120 130 140 150 o LEAD TEMPERATURE ( C) PEAK FORWARD SURGE A CURRENT (A) ES1F-1G 10 ES1A-D 1 0.1 ES1H-1J 0.01 FIG. 3- MAXIMUM NON-REPETITIVE FORWARD PEAK SURGE CURRENT 30 0.4 0.6 0.8 1 1.2 1.4 FORWARD VOLTAGE (V) 1.6 1.8 8.3mS Single Half Sine Wave (JEDEC Method) 25 20 15 FIG. 5- TYPICAL REVERSE CHARACTERISTICS 1000 10 5 0 100 1 10 NUMBER OF CYCLES AT 60 Hz 100 FIG. 4- TYPICAL JUNCTION CAPACITANCE 100 JUNCTION CAPACITANCE (pF) INSTANTANEOUS FORWARD A CURRENT (A) RESISTER OR INDUCTIVE LOAD 0.8 ES1F-J 10 INSTANTANEOUS REVERSE A CURRENT (uA) AVERAGE FORWARD A CURRENT (A) 1.2 TA=125℃ 10 TA=75℃ 1 TA=25℃ 0.1 ES1A-D 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 1 0.1 1 10 100 REVERSE VOLTAGE (V) Version:G11