Preliminary TSC5401 Very High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 700V BVCBO 1500V IC VCE(SAT) Features 1A 1.0V @ IC / IB = 0.5A / 0.1A Block Diagram ● Very High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. Package Packing TSC5401CT B0 TO-92 1Kpcs / Bulk TSC5401CT B0G TO-92 1Kpcs / Bulk TSC5401CT A3 TO-92 2Kpcs / Ammo TSC5401CT A3G TO-92 2Kpcs / Ammo Note: “G” denote for Green Product Absolute Maximum Rating (Ta = 25ºC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 1500V V Collector-Emitter Voltage VCEO 700V V Emitter-Base Voltage VEBO 7 V Collector Current Base Current DC IC Pulse DC IB Pulse 1 2 0.5 1 A A Total Power Dissipation PD 10 W Operating Junction Temperature TJ +150 ºC TSTG - 55 to +150 ºC Operating Junction and Storage Temperature Range Note: Single Pulse. PW = 300uS, Duty ≤2% 1/4 Version: Preliminary Preliminary TSC5401 Very High Voltage NPN Transistor Electrical Specifications (Ta = 25ºC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC =1mA, IB =0 BVCBO 1500 -- -- V Collector-Emitter Breakdown Voltage IC =5mA, IE =0 BVCEO 700 -- -- V Emitter-Base Breakdown Voltage IE =1mA, IC =0 BVEBO 7 -- -- V Collector Cutoff Current VCE =700V, IB=0 ICEO -- -- 10 uA Collector Cutoff Current VCB =1300V, IE =0 ICBO -- -- 1 mA Emitter Cutoff Current VEB = 7V, IC =0 IEBO -- -- 10 uA Collector-Emitter Saturation Voltage IC=0.2A, IB =0.04A VCE(SAT)1 --- -- 0.3 V Collector-Emitter Saturation Voltage IC=0.5A, IB =0.1A VCE(SAT)2 --- -- 1.0 V Base-Emitter Saturation Voltage IC=0.5A, IB =0.1A VBE(SAT) -- -- 1.2 V 20 -- 45 5 -- 2 -- -- 0.4 0.8 uS VCE =5V, IC =10mA DC Current Gain VCE =5V, IC = 500mA hFE VCE =5V, IC = 1A Dynamic Resistive Load Switching Time (Ratings) Rise Time VCC =400V, IC =0.5A, Storage Time IB1=0.1, IB2=-0.2A, Fall Time tP =25uS tr tSTG -- 1.5 3 uS tf -- 0.25 0.4 uS Note: pulse test: pulse width ≤300uS, duty cycle ≤2% 2/4 Version: Preliminary Preliminary TSC5401 Very High Voltage NPN Transistor TO-92 Mechanical Drawing DIM A B C D E F G H 3/4 TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 13.53 (typ) 0.532 (typ) 0.39 0.49 0.015 0.019 1.18 1.28 0.046 0.050 3.30 3.70 0.130 0.146 1.27 1.31 0.050 0.051 0.33 0.43 0.013 0.017 Version: Preliminary Preliminary TSC5401 Very High Voltage NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: Preliminary