TSD882 Low Vcesat NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 50V BVCEO 50V IC 3A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSB772 Part No. TSD882CK B0 TSD882CK B0G Structure ● ● 0.5V @ IC / IB = 2A / 200mA Epitaxial Planar Type NPN Silicon Transistor Package Packing TO-126 TO-126 250pcs / Bulk 250pcs / Bulk Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current DC 3 IC Pulse o Collector Power Dissipation Ta = 25 C 1 PD o Tc = 25 C Operating Junction Temperature W 10 TJ Operating Junction and Storage Temperature Range A 7 (note) TSTG +150 o - 55 to +150 o C C Note: Single pulse, Pw≤350us, Duty≤2% Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = 50uA, IE = 0 BVCBO 60 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 BVCEO 50 -- -- V Emitter-Base Breakdown Voltage IE = 50uA, IC = 0 BVEBO 5 -- -- V Collector Cutoff Current VCB = 50V, IE = 0 ICBO -- -- 1 uA Emitter Cutoff Current VEB = 3V, IC = 0 IEBO -- -- 1 uA Collector-Emitter Saturation Voltage IC / IB = 2A / 200mA *VCE(SAT) -- 0.25 0.5 V Base-Emitter Saturation Voltage IC / IB = 2A / 200mA *VBE(SAT) -- -- 2 V DC Current Transfer Ratio VCE = 2V, IC = 1A *hFE 100 -- 500 fT -- 90 -- MHz Cob -- 45 -- pF Transition Frequency Output Capacitance VCE =6V, IC=50mA, f=100MHz VCB = 10V, f=1MHz * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% 1/4 Version: B11 TSD882 Low Vcesat NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Power Derating Curve 2/4 Version: B11 TSD882 Low Vcesat NPN Transistor TO-126 Mechanical Drawing DIM ∝1 ∝2 ∝3 ∝4 A B C D E F G H I J K L M 3/4 TO-126 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 3ºC -3ºC -3ºC 3ºC --3ºC 3ºC --3ºC 3ºC --0.150 0.153 3.81 3.91 0.275 0.279 6.99 7.09 0.531 0.610 13.50 15.50 0.285 0.303 7.52 7.72 0.034 0.041 0.95 1.05 0.028 0.031 0.71 0.81 0.048 0.052 1.22 1.32 0.170 0.189 4.34 4.80 0.095 0.105 2.41 2.66 0.045 0.055 1.14 1.39 0.045 0.055 1.14 1.39 -0.021 -0.55 0.137 0.152 3.50 3.86 Version: B11 TSD882 Low Vcesat NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: B11