TSC TSB1412CP

TSB1412
Low Vcesat PNP Transistor
TO-252
(DPAK)
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BVCBO
-40V
BVCEO
-30V
IC
-5A
VCE(SAT)
Features
●
●
Ordering Information
Low VCE(SAT) -0.36 @ IC / IB = -4A / -100mA (Typ.)
Complementary part with TSD2118
Part No.
TSB1412CP RO
Structure
●
●
-0.5V @ IC / IB = -4A / -100mA
Package
Packing
TO-252
2.5Kpcs / 13” Reel
Epitaxial Planar Type
PNP Silicon Transistor
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
-30
-6
V
V
Collector Current
Collector Power Dissipation
DC
Pulse
Ta=25ºC
-5
-10 (note)
1
IC
PD
Tc=25ºC
Operating Junction Temperature
W
10
+150
TJ
Operating Junction and Storage Temperature Range
Note: Single pulse, Pw=10ms
A
TSTG
o
C
o
- 55 to +150
C
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
IC = -50uA, IE = 0
Conditions
BVCBO
-40
--
--
V
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
IC = -1mA, IB = 0
IE = -50uA, IC = 0
BVCEO
BVEBO
-30
-6
---
---
V
V
Collector Cutoff Current
Emitter Cutoff Current
VCB = -25V, IE = 0
VEB = -5V, IC = 0
ICBO
IEBO
---
---
-0.5
-0.5
uA
uA
*VCE(SAT)
*hFE
-180
-0.36
--
-0.5
390
V
fT
--
120
--
MHz
Cob
--
60
--
pF
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
IC / IB = -4A / -100mA
VCE = -2V, IC = -500mA
VCE =-6V, IC=-50mA,
Transition Frequency
f=30MHz
Output Capacitance
VCB = -20V, f=1MHz
* Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%
1/4
Version: A07
TSB1412
Low Vcesat PNP Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. DC Current Gain
Figure 2. VCE(SAT) v.s. Ic
Figure 3. VBE(SAT) v.s. Ic
Figure 4. Power Derating Curve
2/4
Version: A07
TSB1412
Low Vcesat PNP Transistor
TO-252 Mechanical Drawing
TO-252 DIMENSION
DIM
A
A1
3/4
MILLIMETERS
MIN
MAX
2.3BSC
4.6BSC
INCHES
MIN
MAX
0.09BSC
0.18BSC
B
6.80
7.20
0.268
0.283
C
5.40
5.60
0.213
0.220
D
6.40
6.65
0.252
0.262
E
2.20
2.40
0.087
0.094
F
0.00
0.20
0.000
0.008
G
5.20
5.40
0.205
0.213
G1
0.75
0.85
0.030
0.033
G2
0.55
0.65
0.022
0.026
H
0.35
0.65
0.014
0.026
I
0.90
1.50
0.035
0.059
J
2.20
2.80
0.087
0.110
K
0.50
1.10
0.020
0.043
L
0.90
1.50
0.035
0.059
M
1.30
1.70
0.051
0.67
Version: A07
TSB1412
Low Vcesat PNP Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
4/4
Version: A07