TSC TSB1424

TSB1424
Low Vcesat PNP Transistor
SOT-89
PRODUCT SUMMARY
Pin Definition:
1. Base
2. Collector
3. Emitter
BVCBO
-20V
BVCEO
-20V
IC
-3A
VCE(SAT)
Features
●
●
Ordering Information
Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.)
Complementary part with TSD2150
Part No.
TSB1424CY RM
Structure
●
●
-0.2V @ IC / IB = -2A / -100mA
Package
Packing
SOT-89
1Kpcs / 7” Reel
Epitaxial Planar Type
PNP Silicon Transistor
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
-20
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
-20
-6
V
V
Collector Current
DC
Pulse
-3
-5 (note1)
0.6
IC
Collector Power Dissipation
PD
Operating Junction Temperature
TJ
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw=10ms, Duty≤50%
2. When mounted on a 40 x 50 x 0.7mm ceramic board.
A
W
2 (note 2)
+150
TSTG
o
C
o
- 55 to +150
C
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
IC = -50uA, IE = 0
BVCBO
-20
--
--
V
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
IC = -10mA, IB = 0
IE = -50uA, IC = 0
BVCEO
BVEBO
-20
-6
---
---
V
V
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
VCB = -20V, IE = 0
VEB = -5V, IC = 0
IC / IB = -2A / -100mA
ICBO
IEBO
VCE(SAT)
----
---0.2
-0.1
-0.1
-0.5
uA
uA
V
DC Current Transfer Ratio
VCE = -2V, IC = 100mA
VCE =-2V, IE=0.5A,
f=100MHz
VCB = -10V, IE = 0, f=1MHz
hFE
120
--
390
fT
--
200
--
MHz
Cob
--
28
--
pF
Transition Frequency
Output Capacitance
Conditions
hFE values are classified as follows:
Rank
Q
R
hFE
120~270
180~390
1/4
Version: A07
TSB1424
Low Vcesat PNP Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. DC Current Gain
Figure 2. VCE(SAT) v.s. Ic
Figure 3. VBE(SAT) v.s. Ic
Figure 4. Transition Frequency v.s. IE
Figure 5. Collector Output Capacitance vs. Vcb
Figure 6. Collector Input Capacitance vs. Veb
2/4
Version: A07
TSB1424
Low Vcesat PNP Transistor
SOT-89 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
I
J
3/4
SOT-89 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
4.40
4.60
0.173
0.181
1.50
1.7
0.059
0.070
2.30
2.60
0.090
0.102
0.40
0.52
0.016
0.020
1.50
1.50
0.059
0.059
3.00
3.00
0.118
0.118
0.89
1.20
0.035
0.047
4.05
4.25
0.159
0.167
1.4
1.6
0.055
0.068
0.35
0.44
0.014
0.017
Version: A07
TSB1424
Low Vcesat PNP Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
4/4
Version: A07