TSB1424 Low Vcesat PNP Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO -20V BVCEO -20V IC -3A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.) Complementary part with TSD2150 Part No. TSB1424CY RM Structure ● ● -0.2V @ IC / IB = -2A / -100mA Package Packing SOT-89 1Kpcs / 7” Reel Epitaxial Planar Type PNP Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO -20 -6 V V Collector Current DC Pulse -3 -5 (note1) 0.6 IC Collector Power Dissipation PD Operating Junction Temperature TJ Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw=10ms, Duty≤50% 2. When mounted on a 40 x 50 x 0.7mm ceramic board. A W 2 (note 2) +150 TSTG o C o - 55 to +150 C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -50uA, IE = 0 BVCBO -20 -- -- V Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IC = -10mA, IB = 0 IE = -50uA, IC = 0 BVCEO BVEBO -20 -6 --- --- V V Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage VCB = -20V, IE = 0 VEB = -5V, IC = 0 IC / IB = -2A / -100mA ICBO IEBO VCE(SAT) ---- ---0.2 -0.1 -0.1 -0.5 uA uA V DC Current Transfer Ratio VCE = -2V, IC = 100mA VCE =-2V, IE=0.5A, f=100MHz VCB = -10V, IE = 0, f=1MHz hFE 120 -- 390 fT -- 200 -- MHz Cob -- 28 -- pF Transition Frequency Output Capacitance Conditions hFE values are classified as follows: Rank Q R hFE 120~270 180~390 1/4 Version: A07 TSB1424 Low Vcesat PNP Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Transition Frequency v.s. IE Figure 5. Collector Output Capacitance vs. Vcb Figure 6. Collector Input Capacitance vs. Veb 2/4 Version: A07 TSB1424 Low Vcesat PNP Transistor SOT-89 Mechanical Drawing DIM A B C D E F G H I J 3/4 SOT-89 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.40 4.60 0.173 0.181 1.50 1.7 0.059 0.070 2.30 2.60 0.090 0.102 0.40 0.52 0.016 0.020 1.50 1.50 0.059 0.059 3.00 3.00 0.118 0.118 0.89 1.20 0.035 0.047 4.05 4.25 0.159 0.167 1.4 1.6 0.055 0.068 0.35 0.44 0.014 0.017 Version: A07 TSB1424 Low Vcesat PNP Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A07