TSD2150A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 80V BVCEO 50V IC 3A VCE(SAT) Features ● ● 0.5V @ IC / IB = 2A / 200mA Ordering Information Low VCE(SAT) 0.1 @ IC / IB = 1A / 50mA (Typ.) Complementary part with TSB1424A Part No. Package Packing TSD2150ACY RM SOT-89 1Kpcs / 7” Reel Structure ● ● Epitaxial Planar Type NPN Silicon Transistor Absolute Maximum Ratings (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V Collector Current DC 3 IC Pulse Collector Power Dissipation PD Operating Junction Temperature 0.6 TSTG W +150 o C - 55 to +150 o C TJ Operating Junction and Storage Temperature Range A 6 (note1) Note: 1. Single pulse, Pw=10ms, Duty≤50% 2. When mounted on a 40 x 50 x 0.7mm ceramic board. Electrical Specifications (TA=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = 50uA, IE = 0 BVCBO 80 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 BVCEO 50 -- -- V Emitter-Base Breakdown Voltage IE = 50uA, IC = 0 BVEBO 6 -- -- V Collector Cutoff Current VCB = 60V, IE = 0 ICBO -- -- 0.1 µA Emitter Cutoff Current VEB = 3V, IC = 0 IEBO -- -- 0.1 µA IC / IB = 1A / 50mA VCE(SAT) -- 0.1 0.25 IC / IB = 2A / 200mA VCE(SAT) -- 0.25 0.5 IC / IB = 2A / 200mA VBE(SAT) -- -- 2 VCE = 2V, IC = 100mA hFE 1 180 -- -- VCE = 2V, IC = 500mA hFE 2 200 -- 400 VCE = 2V, IC = 1A hFE 3 150 -- -- fT -- 90 -- MHz Cob -- 45 -- pF Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency VCE =5V, IE=0.1A, f=100MHz VCB = 10V, f=1MHz Output Capacitance Note: Pulse test: pulse width ≤380µs, Duty cycle≤2% 1/4 V V Version: C14 TSD2150A Low Vcesat NPN Transistor Electrical Characteristics Curves (TA=25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Collector Current Figure 3. VBE(SAT) v.s. Collector Current Figure 4. Power Derating Curve 2/4 Version: C14 TSD2150A Low Vcesat NPN Transistor SOT-89 Mechanical Drawing Unit: Millimeters 3/4 Version: C14 TSD2150A Low Vcesat NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: C14