TSC TSD1858

TSD1858
Low Vcesat NPN Transistor
TO-251
(IPAK)
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BVCBO
180V
BVCEO
160V
IC
1.5A
VCE(SAT)
Features
●
●
Ordering Information
Low VCE(SAT) 0.15 @ IC = 1A, IB = 100mA (Typ.)
High BVCEO
Part No.
TSD1858CH C5G
Package
Packing
TO-251
75pcs / Tube
Note: “G” denote for Halogen Free Product
Structure
●
●
0.3V @ IC = 1A, IB = 100mA
Epitaxial Planar Type
NPN Silicon Transistor
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
Limit
Unit
VCBO
VCEO
VEBO
V
V
V
o
PD
180
160
5
1.5
3 (note1)
1
o
PD
15
DC
Pulse
Collector Current
IC
Power Dissipation @ TA=25 C
Power Dissipation @ TC=25 C
Thermal Resistance - Junction to Case
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw≤380us, Duty≤2%
W
W
125
o
RӨJA
8.33
o
TJ
TSTG
+150
- 55 to +150
RӨJC
Thermal Resistance - Junction to Ambient
A
C/W
C/W
o
C
C
o
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 1mA, IE = 0
IC = 10mA, IB = 0
IE = 50uA, IC = 0
VCB = 160V, IE = 0
VEB = 4V, IC = 0
IC= 1A, IB = 100mA
VCE = 5V, IC = 5mA
VCE = 5V, IC = 200mA
DC Current Transfer Ratio
VCE = 5V, IC = 500mA
VCE =5V, IE=150mA,
Transition Frequency
f=100MHz
Output Capacitance
VCB = 10V, f=1MHz
Note: Pulse test: pulse width ≤380uS, Duty cycle≤2%
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Symbol
Min
Typ
Max
Unit
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)
VBE(ON)
hFE 1
hFE 2
180
160
5
----180
30
-----0.15
----
---1
1
0.3
0.8
390
--
V
V
V
uA
uA
V
V
fT
--
200
--
MHz
Cob
--
13
--
pF
Version: E11
TSD1858
Low Vcesat NPN Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. DC Current Gain
(VCE=5V, TA=25°C)
Figure 2. VCE(SAT) vs. Collector Current
Figure 3. VBE(SAT) vs. Collector Current
Figure 4. Cib vs. VCE
(IC/IB=10, TA=25°C)
(f=1MHz, TA=25°C)
Figure 5. Frequency vs. Emitter Current
Figure 6. Cob vs. VCB
(VCE=5V, TA=25°C)
(f=1MHz, TA=25°C)
(IC/IB=10, TA=25°C)
2/4
Version: E11
TSD1858
Low Vcesat NPN Transistor
TO-251 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
3/4
Version: E11
TSD1858
Low Vcesat NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
4/4
Version: E11