UNISONIC TECHNOLOGIES CO., LTD 8N70 Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N70 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand high energy pulse in the avalanche and commutation mode. FEATURES * RDS(ON)= 1.4Ω @ VGS=10V, ID=4A * High switching speed * Low Gate Charge(typical 32nC) * Low CRSS (typical 13.7pF) SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 8N70L-TA3-T 8N70G-TA3-T 8N70L-TF3-T 8N70G-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 1 of 6 QW-R502-711.D 8N70 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 700 V ±30 V 8 A TC=25°C ID Continuous Drain Current TC=100°C 4.8 A Pulsed (Note 4) IDM 32 A 8 A Repetitive (Note 2) IAR Avalanche Current Repetitive (Note 3) IAS 8 A Single Pulsed (Note 3) EAS 266 mJ Avalanche Energy Repetitive (Note 2) EAR 11.6 mJ TO-220 147 Power Dissipation (TC=25°C) PD W TO-220F 40 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 7.74mH, IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. Limited by maximum junction temperature SYMBOL VDSS VGSS THERMAL DATA PARAMETER Junction to Ambient SYMBOL θJA TO-220 TO-220F Note: 3urface mounted on FR4 board t≤10sec Junction to Case RATINGS 62.5 0.85 3.1 θJC UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) CISS COSS CRSS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS MIN TYP MAX UNIT ID=250µA, VGS=0V VDS=700V, VGS=0V VGS=+30V, VDS=0V VGS=-30V, VDS=0V 700 VDS=VGS, ID=250µA VGS=10V, ID=4A 2.0 VGS=0V, VDS=25V, f=1.0MHz 1.2 2006 148 13.7 1 +10 -10 V µA nA nA 4.0 1.4 V Ω pF pF pF 2 of 6 QW-R502-711.D 8N70 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=560V, ID=8A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=300V, ID=10A, RG=25Ω, VGS=10V (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Integral reverse diode in the MOSFET Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=8A, VGS=0V Body Diode Reverse Recovery Time trr IS=8A, VGS=0V, dIF/dt=100A/µs Body Diode Reverse Recovery Charge QRR Notes: 1. Essentially independent of operating temperature 2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 32 9 8 23 69 144 77 nC nC nC ns ns ns ns 8 32 1.4 420 4.2 A A V ns µC 3 of 6 QW-R502-711.D 8N70 Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 6 QW-R502-711.D 8N70 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-711.D 8N70 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) Drain Current, ID (µA) Drain-Source On-State Resistance Characteristics Drain Current, ID (A) 5 Drain Current vs. Source to Drain Voltage 10 4 ID=4A, VGS=10V 3 2 Drain Current, ID (A) 8 6 4 2 1 0 0 1.5 3 4.5 7.5 6 Drain to Source Voltage, VDS (V) 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-711.D