UTC 2N7000 MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications 1 FEATURES TO-92 *High density cell design for low RDS(ON) *Voltage controlled small signal switch *Rugged and reliable *High saturation current capability 1: SOURCE 2: GATE 3: DRAIN ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) SYMBOL RATINGS Drain-Source Voltage PARAMETER VDSS 60 V Drain-Gate Voltage(RGS≤1MΩ) VDGR 60 V Gate -Source Voltage-Continuous VGSS ±20 V ±40 -Non Repetitive (tp<50µs) Maximum Drain Current-Continuous ID -Pulsed Maximum Power Dissipation Maximum Lead Temperature for Soldering Purposes, 1/16” from Case 115 mA 800 PD 400 mW 3.2 mW/°C TJ,TSTG -55 to +150 °C TL 300 °C SYMBOL RATINGS UNIT RθJA 312.5 °C/W Derated above 25°C Operating and Storage Temperature Range UNIT for 10 Seconds THERMAL CHARACTERISTICS PARAMETER Thermal Resistance, Junction-to-Ambient UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-064,A UTC 2N7000 MOSFET ELECTRICAL CHARACTERISTICS (T a =25°C, unless otherwise noted) PARAMETER SYMBOL CONDITIONS. MIN TYP MAX UNITS 1 μA 0.5 mA OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V,ID=10 µA 60 V VDS=60V, VGS =0V TJ=125°C Gate-Body leakage, Forward IGSSF VGS =20V, VDS=0V 100 nA Gate-Body leakage Reverse IGSSR VGS =-20V, VDS=0V -100 nA V ON CHARACTERISTICS (Note) Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS(ON) Drain-Source On-Voltage On-State Drain Current VDS(ON) 2.1 2.5 VGS =10V, ID=500mA VDS =VGS , ID=250μA 1 1.2 7.5 TJ=100°C 1.7 13.5 VGS =5.0V, ID=50mA 1.7 7.5 TJ=100°C 2.4 13.5 VGS = 10V, ID=500mA 0.6 3.75 VGS = 5.0V, ID=50mA 0.09 1.5 Ω V ID(ON) VGS=10V, VDS≧2VDS(on) 500 2700 mA gFS VDS≧2VDS(on), ID=200mA 80 320 mS Input Capacitance Ciss VDS=25V,VGS=0V, 20 50 pF Output Capacitance Coss f=1.0MHz 11 25 pF Reverse Transfer Capacitance Crss Forward Transconductance DYNAMIC CHARACTERISTICS 5 pF 20 ns 20 ns Is 115 mA ISM 0.8 A 1.5 V Turn-On Time 4 VDD=30V, RL=150Ω, ton ID=200mA, VGS=10V, RGEN=25Ω VDD=30V, RL=150Ω, Turn-Off Time toff ID=200mA, VGS=10V, RGEN=25Ω DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VSD VGS=0V, Is=115mA(Note ) 0.88 Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0% UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-064,A UTC 2N7000 MOSFET Figure 2. On-Resistance Varisation with Gate Voltage and Drain Current Figure 1. On-Region Characteristics VGS=10V 9.0V RDS(ON),NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID,DRAIN-SOURCE CURRENT (A) 2 8.0 7.0 1.5 6.0 1 5.0 0.5 4.0 3.0 0 2 1 3 VGS= 4.0V 4.5 6.0 2 7.0 8.0 9.0 1.5 10 1 0.8 0.4 0 RDS(ON),NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON),NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=10V ID=500mA 1.5 1.25 1 0.75 0.5 -50 -25 0 25 50 75 100 125 3 VGS=10V 2.5 TJ=125°C 2 1.5 25°C 1 0 150 -55°C 0.5 0 0.4 TJ,JUCTION TEMPERATURE (°C) 25°C 125°C 1.6 1.8 1.2 0.4 0 0 2 4 6 8 VGS,GATE TO SOURCE VOLTAGE (V) UTC 1.2 1.6 2 Figure 6. Gate Threshold Varisation with Temperature 10 Vth,NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE ID,DRAIN CURRENT (A) TJ= -55°C VDS=10V 0.8 ID,DRAIN CURRENT (A) Figure 5.Transfer Characteristics 2 2 Figure 4. On-Resistance Varisation with Drain Current and Temperature Figure 3. On-Resistance Varisation with Temperature 1.75 1.6 1.2 ID,DRAIN CURRENT (A) VDS,DRAIN-SOURCE VOLTAGE (V) 2 5.0 2.5 0.5 5 4 3 1.1 VDS=VGS ID=1mA 1.05 1 0.95 0.9 0.85 0.8 -50 -25 0 25 50 75 100 125 150 TJ,JUCTION TEMPERATURE (°C) UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R201-064,A UTC 2N7000 MOSFET Figure 8. Body Diode Forward Voltage Varisation with Temperature 2 1.1 IS,REVERSE DRAIN CURRENT(A) BVDSS,NORMALIZED DRAIN-SOURCE VREAKDOWN VOLTAGE Figure7. Breakdown Voltage Varisation with Temperature ID=250μA 1.075 1.05 1.025 1 0.975 0.95 0.925 -50 -25 0 25 50 75 100 125 VGS=0V 1 0.5 TJ=125°C 0.1 0.01 -55°C 0.005 0.001 0.2 150 Figure9.Capacitance Characteristics VGS, GATE-SOURCE VOLTAGE(V) CAPACITANCE(pF) Ciss Coss 10 1 Crss VGS=0V f=1MHz 1 2 1.2 1.2 Figure10. Gate Charge Characteristics 40 2 1 0.8 VsD,BODY DIODE FORWARD VOLTAGE (V) 60 5 0.6 0.4 TJ,JUCTION TEMPERATURE (°C) 20 25°C 10 VDS=25V 8 6 ID=500mA 4 280mA 2 115mA 3 5 10 20 30 0 50 0.4 0 0.8 1.2 1.6 2 Qg,GATE CHARGE(nC) VDS,DRAIN TO SOURCE VOLTAGE (V) Figure12. Switching Waveforms Figure11 VDD ton RL toff td(on) tr VIN VOUT D VGS Output ,Vout RGEN td(off) tf 90% 90% 10% 10% DUT Inverted 90% G Input ,Vin S 50% 50% 10% Pulse Width UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R201-064,A UTC 2N7000 MOSFET Figure 13. Maximum Safe Operating Area 3 2 100 ID,DRAIN CURRENT(A) 1 0.5 RD 10m s 0.1 0.05 0.01 0.005 1 us 1ms imit N)L S(O 100 m 2 s 1s 10s DC VGS=10V SINGLE PULSE TA=25℃ 5 10 20 30 60 80 VDS,DRAIN TO SOURCE VOLTAGE (V) Figure 14. Transient Thermal Response Curve 1 0.5 0.2 0.1 RθJA (t)= r (t) * RθJA RθJA= (see Datasheet) TJ * Ta=P* RθJA (t) Duty Cycle, D= t1 / t2 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 1 P(pk) t1 t2 10 100 300 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R201-064,A