E L E C T R O N I C 2N7002PT N-Channel Enhancement Mode Field Effect Transistor - 0.25Amp 60Volt □ Application -Servomotor control -Power MOSFET gate drivers -Other switching applications SOT-23 .082(2.10) .066(1.70) .119(3.04) .110(2.80) .019(0.50) .018(0.30) -Small surface mounting type -High density cell design for low RDS(ON) -Suitable for high packing density -Rugged and reliable -High saturation current capability -Voltage controlled small signal switch .040(1.02) .035(0.88) □ Feature □ Construction -N-Channel Enhancement .028(0.70) .020(0.50) .103(2.64) .086(2.20) D .007(0.177) .002(0.050) □ Circuit .055(1.40) .047(0.85) .045(1.15) .033(0.85) G S □ Absolute Maximum Ratings PARAMETER SYMBOL 2N7002PT UNIT Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS≦1MΩ) VDGR 60 V Gate-Source Voltage - Continuous - Non Repetitive (tp<50μs) Maximum Drain Current - Continuos TA = 25ºC - Pulsed TA = 70ºC Maximum Power Dissipation TA = 25ºC TA = 70ºC Operting and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16” from Case for 10 Seconds Thermal Resistance, Junction-to-Ambient VGSS ID PD ± 20 ± 40 250 V mA 190 350 mW 220 TJ , TSTG -55 to +150 mW TL 300 ºC RθJA 357 ºC/W September 2006 / Rev.3 2N7002PT □ Electrical Characteristics PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNIT Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 10μA 60 70 Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V 1 μA Gate-Body Leakage, Forward IGSSF VGS = 15V, VDS = 0V 10 nA Gate-Body Leakage, Reverse IGSSR VGS = -15V, VDS = 0V -10 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 2.5 V Ststic Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 250mA 1.7 3.0 VGS = 4V, ID = 100mA 2.5 4.0 Drain-Source On-Voltage VDS(ON) VGS = 10V, ID = 500mA 0.6 3.75 VGS = 5V, ID = 50mA 0.09 1.5 On-State Drain Current ID(ON) Forward Transconductance gFS OFF CHARACTERISTICS V ON CHARACTERISTICS (Note 1) 1.0 VGS = 10V, VDS = 7.5VDS(ON) 800 1800 VGS = 4.5V, VDS = 10VDS(ON) 500 700 VDS = 15VDS(ON), ID = 200mA Ω V mA 250 mS DYNAMIC CHARACTERISTICS Total Gate Charge Qg Gate-Source Charge Qgs Gate-Srain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time ton tr Turn-Off Times toff tf 0.6 1.0 0.06 25 0.06 5 25 50 6 25 1.2 5 VDD = 30V, RL = 200Ω, ID = 100mA, VGS = 10V, RGEN = 10Ω 7.5 20 VDD = 30V, RL = 200Ω, ID = 100mA, VGS = 10V, RGEN = 10Ω 7.5 VDS = 30V, VGS = 10V, ID = 200mA VDS = 25V, VGS = 0V, f = 1.0MHz nC pF nS 6 20 nS 3 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS 115 mA ISM 0.8 A 1.2 V VSD Note: .1.Pulse test : Pulse Width < 300 μs, Duty Cycle < 2.0% VGS = 0V, IS = 200mA 0.85 RATING CHARACTERISTIC CURVES ( 2N7002PT ) Typical Electrical Characteristics Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 2 .5 6 9.0 V GS =4.0V 8.0 4 .5 RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) VGS = 10V 7.0 2 6.0 1 .5 5.0 1 4.0 0 .5 3.0 0 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 5 .0 5 6 .0 4 7 .0 8 .0 3 9 .0 10 2 1 5 0 Figure 3. On-Resistance Variation with Temperature 0 .4 V GS = 10V R DS(on) , NORMALIZED 4.0 3.0 2.0 1.0 -2 5 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 250m A 5 TJ = 1 2 5 °C 4 3 25°C 2 -55°C 1 0 150 0 Figure 5. Transfer Characteristics 0 .4 0 .8 1 .2 I D , DRAIN CURRENT (A) 1 .6 2 Figure 6. Gate Threshold Variation with Temperature 2 T J = -55°C 25°C 125°C 1.6 1.2 0.8 0.4 0 0 2 4 6 8 V GS , GATE TO SOURCE VOLTAGE (V) 10 Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 1 .1 VDS = 10V ID , DRAIN CURRENT (A) 2 6 V GS = 10V 0 -5 0 1 .6 Figure 4. On-Resistance Variation with Drain Current and Temperature 6.0 5.0 0 .8 1 .2 I D , DRA IN CURRENT (A) V DS = VGS 1 .0 5 I D = 1 mA 1 0 .9 5 0 .9 0 .8 5 0 .8 -50 -25 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (°C) 125 150 RATING CHARACTERISTIC CURVES ( 2N7002PT ) Typical Electrical Characteristics (continued) Figure 8. Body Diode Forward Voltage Variation with Drain Current Figure 7. Breakdown Voltage Variation with Temperature 2 I D = 250µA 1.05 1.025 1 0.975 0.95 0.925 -50 -25 V GS = 0 V 1 IS , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1.1 1.075 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (°C) 125 0 .5 TJ = 1 2 5 °C 0 .1 25°C 0 .0 5 -5 5 ° C 0 .0 1 0 .0 0 5 0 .0 0 1 0 .2 150 0 .4 0 .6 V SD Figure 9. Capacitance Characteristics 1 1 .2 1 .4 Figure 10. Gate Charge Characteristics 60 1.0 VGS , GATE-SOURCE VOLTAGE (V) 40 C iss 20 CAPACITANCE (pF) 0 .8 , BODY DIODE FORWARD VOLTAGE (V) 10 C oss 5 f = 1 MH z 2 V GS = 0V C rss V DS = 3 0 V .8 .6 .4 .2 ID = 2 5 0 m A 1 0 1 2 3 V DS 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 30 50 0 0 .1 Figure 11. 0 .2 0 .3 Q g , GATE CHARGE (nC) t on t d(on) R GEN t off tr RL t d(off) tf 90% 90% V OUT D VGS Output, Vout 10% 10% 90% DUT G Input, Vin S 0.5 Figure 12. Switching Waveforms VDD V IN 0 .4 50% 50% 10% Pulse Width Inverted RATING CHARACTERISTIC CURVES ( 2N7002PT ) Typical Electrical Characteristics (continued) Figure 13. 2N7002PT Maximum Safe Operating Area 3 2 100 I D , DRAIN CURRENT (A) 1 RDS (ON) Lim it 1m us s 0.5 10m 0.1 100 0.05 10s DC VGS = 10V s ms 1s SINGLE PULSE 0.01 T A = 25° C 0.005 1 2 5 10 V DS , DRAIN-SOURCE VOLTAGE (V) 20 30 60 80 Figure 14. 2N7002PT Transient Thermal Response Curve r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0 .2 0.1 0.05 R θJA (t) = r(t) * R θJA R θJA = (See Datasheet) 0.1 0 .0 5 0 .0 2 P(pk) 0 .0 1 t1 0.01 t2 Single Pulse TJ - T A = P * RθJA (t) Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 300