CHENMKO 2N7002PT

CHENMKO ENTERPRISE CO.,LTD
2N7002PT
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts
CURRENT 0.250 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SOT-23
* Rugged and reliable.
* High saturation current capability.
* Voltage controlled small signal switch.
.019 (0.50)
.041 (1.05)
.033 (0.85)
* Small surface mounting type. (SOT-23)
* High density cell design for low R DS(ON).
* Suitable for high packing density.
.066 (1.70)
.110 (2.80)
.082 (2.10)
(1)
.119 (3.04)
.018 (0.30)
FEATURE
(3)
(2)
CONSTRUCTION
* 7002
D (3)
CIRCUIT
.103 (2.64)
.086 (2.20)
.045 (1.15)
.033 (0.85)
.002 (0.05)
MARKING
.028 (0.70)
.020 (0.50)
.007 (0.177)
.055 (1.40)
.047 (1.20)
* N-Channel Enhancement
(1) G
Dimensions in inches and (millimeters)
S (2)
Absolute Maximum Ratings
SOT-23
TA = 25°C unless otherwise noted
2N7002PT
Units
Drain-Source Voltage
60
V
VDGR
Drain-Gate Voltage (RGS < 1 MΩ)
60
V
VGSS
Gate-Source Voltage - Continuous
Symbol
Parameter
VDSS
±20
- Non Repetitive (tp < 50µs)
ID
Maximum Drain Current - Continuous
- Pulsed
PD
Maximum Power Dissipation
±40
TA= 25°C
250
TA= 70°C
190
V
mA
TA= 25°C
350
mW
TA= 70°C
220
mW
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
TL
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300
°C
357
°C/W
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
2002-7
RATING CHARACTERISTIC CURVES ( 2N7002PT )
Electrical Characteristics T
Symbol
A
= 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
60
70
Max
Units
1
µA
0.5
mA
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 10 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
TC=125°C
V
IGSSF
Gate - Body Leakage, Forward
VGS = 15 V, VDS = 0 V
10
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -15 V, VDS = 0 V
-10
nA
2.0
2.5
V
Ω
ON CHARACTERISTICS
(Note 1)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance VGS = 10 V, ID = 250 mA
1.7
3.0
VGS = 4.0 V, ID = 100 mA
2.5
4.0
VGS = 10 V, ID = 500mA
0.6
3.75
VGS = 5.0 V, ID = 50 mA
0.09
1.5
VDS(ON)
ID(ON)
gFS
Drain-Source On-Voltage
On-State Drain Current
Forward Transconductance
VDS = VGS, ID = 250 µA
1
VGS = 10 V, VDS = 7.5VDS(on)
800
1800
VGS = 4.5V, VDS = 10VDS(on)
500
700
V
mA
VDS = 15 V DS(on), ID = 200 m A
250
VDS = 30 V, VGS = 10 V,
I D = 250 mA
0.6
1.0
0.06
25
0.06
5
25
50
6
25
1.2
5
7.5
20
nS
20
nS
mS
DYNAMIC CHARACTERISTICS
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
ton
Turn-On Time
tr
toff
Turn-Off Time
tf
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDD = 30 V, RL = 200 Ω,
ID = 100 mA, VGS = 10 V,
RGEN = 10 Ω
VDD = 30 V, RL = 200 Ω,
ID = 100 mA, VGS = 10 V,
RGEN = 10 Ω
nC
pF
6
7.5
3
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
115
mA
ISM
Maximum Pulsed Drain-Source Diode Forward Current
0.8
A
VSD
Drain-Source Diode Forward
Voltage
1.2
V
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
VGS = 0 V, IS = 200 mA (Note 1)
0.85
RATING CHARACTERISTIC CURVES ( 2N7002PT )
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
2 .5
6
9.0
V GS =4.0V
8.0
4 .5
RDS(on) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
VGS = 10V
7.0
2
6.0
1 .5
5.0
1
4.0
0 .5
3.0
0
0
1
2
3
V DS , DRAIN-SOURCE VOLTAGE (V)
4
5 .0
5
6 .0
4
7 .0
8 .0
3
9 .0
10
2
1
5
0
Figure 3. On-Resistance Variation
with Temperature
0 .4
V GS = 10V
R DS(on) , NORMALIZED
4.0
3.0
2.0
1.0
-2 5
0
25
50
75
100
TJ , JUNCTION T EMPERATURE (°C)
125
DRAIN-SOURCE ON-RESISTANCE
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I D = 250m A
5
TJ = 1 2 5 °C
4
3
25°C
2
-55°C
1
0
150
0
Figure 5. Transfer Characteristics
0 .4
0 .8
1 .2
I D , DRAIN CURRENT (A)
1 .6
2
Figure 6. Gate Threshold Variation with
Temperature
2
T J = -55°C
25°C
125°C
1.6
1.2
0.8
0.4
0
0
2
4
6
8
V GS , GATE TO SOURCE VOLTAGE (V)
10
Vth , NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
1 .1
VDS = 10V
ID , DRAIN CURRENT (A)
2
6
V GS = 10V
0
-5 0
1 .6
Figure 4. On-Resistance Variation with Drain
Current and Temperature
6.0
5.0
0 .8
1 .2
I D , DRA IN CURRENT (A)
V DS = VGS
1 .0 5
I D = 1 mA
1
0 .9 5
0 .9
0 .8 5
0 .8
-50
-25
0
25
50
75
100
TJ , JUNCTION TEM PERATURE (°C)
125
150
RATING CHARACTERISTIC CURVES ( 2N7002PT )
Typical Electrical Characteristics (continued)
Figure 8. Body Diode Forward Voltage
Variation with Drain Current
Figure 7. Breakdown Voltage Variation
with Temperature
2
I D = 250µA
1.05
1.025
1
0.975
0.95
0.925
-50
-25
V GS = 0 V
1
IS , REVERSE DRAIN CURRENT (A)
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.1
1.075
0
25
50
75
100
TJ , JUNCTION TEM PERATURE (°C)
125
0 .5
TJ = 1 2 5 °C
0 .1
25°C
0 .0 5
-5 5 ° C
0 .0 1
0 .0 0 5
0 .0 0 1
0 .2
150
0 .4
0 .6
V SD
Figure 9. Capacitance Characteristics
1
1 .2
1 .4
Figure 10. Gate Charge Characteristics
60
1.0
VGS , GATE-SOURCE VOLTAGE (V)
40
C iss
20
CAPACITANCE (pF)
0 .8
, BODY DIODE FORWARD VOLTAGE (V)
10
C oss
5
f = 1 MH z
2
V GS = 0V
C rss
V DS = 3 0 V
.8
.6
.4
.2
ID = 2 5 0 m A
1
0
1
2
3
V DS
5
10
20
, DRAIN TO SOURCE VOLTAGE (V)
30
50
0
0 .1
Figure 11.
0 .2
0 .3
Q g , GATE CHARGE (nC)
t on
t d(on)
R GEN
t off
tr
RL
t d(off)
tf
90%
90%
V OUT
D
VGS
Output, Vout
10%
10%
90%
DUT
G
Input, Vin
S
0.5
Figure 12. Switching Waveforms
VDD
V IN
0 .4
50%
50%
10%
Pulse Width
Inverted
RATING CHARACTERISTIC CURVES ( 2N7002PT )
Typical Electrical Characteristics (continued)
Figure 13. 2N7002PT Maximum Safe Operating Area
3
2
100
I D , DRAIN CURRENT (A)
1
RDS
(ON)
Lim it
1m
us
s
0.5
10m
0.1
100
0.05
10s
DC
VGS = 10V
s
ms
1s
SINGLE PULSE
0.01
T A = 25° C
0.005
1
2
5
10
V DS , DRAIN-SOURCE VOLTAGE (V)
20
30
60
80
Figure 14. 2N7002PT Transient Thermal Response Curve
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
D = 0.5
0.2
0 .2
0.1
0.05
R θJA (t) = r(t) * R θJA
R θJA = (See Datasheet)
0.1
0 .0 5
0 .0 2
P(pk)
0 .0 1
t1
0.01
t2
Single Pulse
TJ - T A = P * RθJA (t)
Duty Cycle, D = t1 /t2
0.002
0.001
0.0001
0.001
0.01
0.1
t1 , TIME (sec)
1
10
100
300