UNISONIC TECHNOLOGIES CO., LTD MCK100 Preliminary SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS SCR 1 SOT-89 DESCRIPTION The UTC MCK100 is a sensitive gate silicon controlled rectifiers reverse blocking thyristor. It provides the customers with high surge current capability, high blocking voltage to 600 V and high switching speed. The UTC MCK100 is suitable for sensing and detection circuits and high volume line – powered consumers applications FEATURES * High Surge Current Capability * High Blocking Voltage to 600 V * On–State Current Rating of 0.8 A RMS @ TC=80°C * High Switching Speed (20 V/μs Minimum @ TC=110°C) * Reliability and Uniformity SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free MCK100L-x-xx-AB3-R MCK100G-x-xx-AB3-R Note: Pin assignment: G: Gate K: Cathode A: Anode Package SOT-89 Pin assignment 1 2 3 K G A Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 4 QW-R601-041.a MCK100 Preliminary UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SCR 2 of 4 QW-R601-041.a MCK100 Preliminary SCR ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT MCK100-3 100 Peak Repetitive Off-State Voltage(Note 2) VDRM MCK100-4 200 (TJ=-40 ~ 110°C, Sine Wave, 50 ~ 60Hz, V V MCK100-6 400 RRM Gate Open) MCK100-8 600 Peak Gate Voltage – Reverse(TA=25°C, Pulse Width≤1.0μs) VGRM 5.0 V On-Sate RMS Current (TC=80°C) 180°C Condition Angles IT(RMS) 0.8 A Peak Non-Repetitive Surge Current ITSM 10 A (1/2 cycle, Sine Wave, 60Hz, TJ=25°C) Peak Gate Current-Forward (TA=25°C, Pulse Width≤1.0μs) IGM 1.0 A Circuit Fusing Considerations (t=8.3 ms) I2t 0.415 A2s Forward Peak Gate Power (TA=25°C, Pulse Width ≤1.0μs) PGM 2 W Forward Average Gate Power (TA=25°C, t=8.3ms) PG(AV) 0.1 W Operating Junction Temperature @ Rated VRRM and VDRM TJ -40 ~ 125 °C Storage Temperature TSTG -40 ~ 150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS PARAMETER SYMBOL θJA θJC Junction to Ambient Junction to Case RATINGS 200 75 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS(TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Peak Repetitive Forward or TC=25°C Reverse Blocking Current (Note 1) TC=110°C ON CHARACTERISTICS Peak Forward On-State Voltage (Note 3) Gate Trigger Current (Continuous dc) (Note2) TC=25°C Holding Current (Note 3) TC=-40°C TC=25°C Latch Current TC=-40°C Gate Trigger Current TC=25°C (continuous dc) (Note 2) TC=-40°C DYNAMIC CHARACTERISTICS SYMBOL TEST CONDITIONS IDRM IRRM VD=Rated VDRM and VRRM, RGK=1kΩ VTM IGT ITM=1A Peak @ TA=25°C VAK=7.0V, RL=100Ω, TC=25°C VAK=7V, initiating current=20mA IH IL VAK=7V, IG=200μA VGT VAK=7V, RL=100Ω Critical Rate of Rise of Off-State Voltage dV/dt Critical Rate of Rise of On-State Current di/dt VD=Rated VDRM, Exponential Waveform, RGK=1000Ω, TJ=110°C IPK=20A, PW=10μs, diG/dt=1A/μs, Igt=20mA MIN TYP MAX UNIT 10 100 40 0.5 0.6 0.62 20 1.7 200 5.0 10 10 15 0.8 1.2 35 μA V μA mA mA V V/μs 50 A/μs Notes: 1. RGK=1000Ω included in measurement. 2. Does not include RGK in measurement. 3. Indicates Pulse Test Width≤1.0ms, duty cycle ≤1% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R601-041.a MCK100 Preliminary SCR VOLTAGE CURRENT CHARACTERISTIC OF SCR SYMBOL VDRM IDRM VRRM IRRM VTM IH PARAMETER Peak Repetitive Off Stat Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current +Current Anode+ VTM On State IH IRRM at VRRM +Voltage IDRM at VDRM Reverse Blocking Region (off state) Forward Blocking Region (off state) Reverse Avalanche Region Anode- CLASSIFICATION OF IGT RANK RANGE B 48 ~ 105 C 95 ~ 200 AA 8 ~ 16 AB 14 ~ 21 AC 19 ~ 25 AD 23 ~ 52 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R601-041.a