UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total Power Dissipation. (625mW) *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 ORDERING INFORMATION Ordering Number Package Normal Lead Free Halogen Free MMBT9013-x-AE3-R MMBT9013L-x-AE3-R MMBT9013G-x-AE3-R SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-021.C MMBT9013 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ TSTG UNIT V V V mA mW °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current SYMBOL BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) VBE(ON) ICBO IEBO hFE1 hFE2 DC Current Gain RATING 40 20 5 500 225 +150 -55 ~ +150 TEST CONDITIONS IC=100μA, IE =0 IC=1mA, IB=0 IE =100μA, IC=0 IC=500mA, IB=50mA IC=500mA, IB=50mA VCE =1V, IC=10mA VCB=25V, IE =0 VEB=3V, IC=0 VCE=1V, IC=50mA VCE=1V, IC=500mA MIN 40 20 5 TYP MAX 0.6 0.16 0.91 0.67 64 40 120 120 0.6 1.2 0.7 100 100 300 UNIT V V V V V V nA nA CLASSIFICATION OF hFE1 RANK RANGE D 64-91 E 78-112 F 96-135 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw G 112-166 H 144-202 I 190-300 2 of 3 QW-R206-021.C MMBT9013 NPN SILICON TRANSISTOR TYPICAL CHARACTERICS Static Characteristic Dc Current Gain 1000 18 IB=140μA 16 IB=120μA 500 300 14 IB=100μA 100 12 Dc Current Gain, hFE Collector Current, IC (mA) 20 IB=80μA 10 IB=60μA 8 6 IB=40μA 4 IB=20μA 2 0 0 10 20 30 40 50 30 10 5 3 1 50 VCE=1V 1 3 5 10 Collector - Emitter Voltage, VCE (V) Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage IC=10IB 3000 1000 VBE (SAT) 500 300 100 50 VCE (SAT) 30 10 1 3 10 30 100 300 1000 3000 10000 Collector Current, IC (mA) Current Gain-Bandwidth Product Current Gain-Bandwidth Product, fT(MHz) Saturation Voltage, VBE(SAT), VCE(SAT) (mV) 10000 30 50 100 300 1000 3000 10000 Collector Current, IC (mA) 1000 IC=10IB 500 300 100 VCE=6V 50 30 10 5 3 1 1 3 10 30 100 300 1000 3000 10000 Collector Current, IC (mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-021.C