UTC D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES *Collector current up to 5A * D965SS : Collector-Emitter voltage up to 20 V * D965ASS : Collector-Emitter voltage up to 30 V 2 1 APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit 3 MARKING(D965SS) MARKING(D965ASS) D65 D65A SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT VCBO 40 V VCEO 20 30 7 750 5 150 -65 ~ +150 V Collector-base voltage Collector-emitter voltage D965SS D965ASS Emitter-base voltage Collector dissipation(Ta=25°C) Collector current Junction Temperature Storage Temperature VEBO Pc Ic Tj TSTG V mW A °C °C ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL Collector-base breakdown voltage Collector-emitter breakdown voltage D965SS D965ASS Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current BVCBO UTC TEST CONDITIONS Ic=100µA,IE=0 Ic=1mA,IB=0 BVCEO BVEBO ICBO IEBO IE=10µA,Ic=0 VCB=10V,IE=0 VEB=7V,Ic=0 MIN TYP MAX UNIT 40 V 20 30 7 V UNISONIC TECHNOLOGIES CO. LTD 100 100 V nA nA 1 QW-R206-016,B UTC D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR DC current gain(note) VCE=2V,Ic=1mA VCE=2V,Ic=0.5A VCE=2V,Ic=2A hFE 200 230 150 PARAMETER SYMBOL TEST CONDITIONS Collector-emitter saturation voltage Current gain bandwidth product Output capacitance VCE(sat) fT Cob Ic=3A, IB= 0.1A VCE=6V,Ic=50mA VCB=20V,IE=0 f=1MHz MIN 800 TYP MAX UNIT 1 V MHz pF 150 50 CLASSIFICATION OF hFE2 RANK RANGE Q 230-380 R 340-600 S 560-800 TYPICAL CHARACTERISTIC CURVES Fig.1 Static characteristics Fig.2 DC current Gain IB=2.0mA 2.0 IB=1.5mA 1.5 IB=1.0mA IB=0.5mA 1.0 0 0.4 0.8 1.2 1.6 2 10 VCE=2V 1 10 0 10 0 2.0 -1 10 1 10 2 10 3 10 2 10 1 10 4 10 0 0.2 0.4 0.6 0.8 Ic,Collector current (mA) Base-Emitter voltage (V) Fig.4 Saturation voltage Fig.5 Current gain-bandwidth product Fig.6 Collector output Capacitance 3 10 VBE(sat) VCE(sat) 2 10 1 10 2 10 3 10 Ic,Collector current (mA) UTC 4 10 Cob,Capacitance (pF) VCE=6V Current Gain-bandwidth product,f T(MHz) 3 10 2 10 1 10 0 10 0 10 1.0 3 10 Ic=10*IB 0 10 VCE=2V 3 10 Collector-Emitter voltage ( V) 4 10 Saturation voltage (mV) Ic,Collector current (mA) IB=2.5mA 2.5 1 10 Fig.3 Base-Emitter on Voltage 4 10 3 10 IB=3.0mA HFE, DC current Gain Ic,Collector current (A) 3.0 1 10 2 10 Ic,Collector current (mA) 3 10 f=1MHz IE=0 2 10 1 10 0 10 10 -1 0 10 1 10 2 10 Collector-Base voltage (V) UNISONIC TECHNOLOGIES CO. LTD 2 QW-R206-016,B UTC D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R206-016,B