UNISONIC TECHNOLOGIES CO., LTD UTM2054 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM2054 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 35mΩ @VGS=10V * RDS(ON)= 45mΩ @VGS=4.5V * RDS(ON)= 110mΩ @VGS=2.5V * Ultra low gate charge ( typical 11.5 nC ) * Low reverse transfer capacitance ( CRSS = typical 60 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness Lead-free: UTM2054L Halogen-free: UTM2054G SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Normal UTM2054-AB3-R Ordering Number Lead Free UTM2054L-AB3-R Halogen Free UTM2054G-AB3-R www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Package SOT-89 Pin Assignment 1 2 3 G D S Packing Tape Reel 1 of 4 QW-R502-289.a UTM2054 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT VDSS 20 V VGSS ±16 V Continuous ID 5 Drain Current (VGS=10V) A Pulsed IDM 20 Diode Continuous Forward Current IS 3 A Power Dissipation PD 1.47 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Note: Absolute maximum ratings are stress ratings only and functional device operation is not implied. Drain-Source Voltage Gate-Source Voltage ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note) SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS IGSS VGS=0V, ID=250µA VDS=16V, VGS=0V VDS=0V, VGS=±16V 20 VGS(TH) VDS=VGS, ID=250µA VGS=10V, IDS=5A VGS=4.5V, IDS=3.5A VGS=2.5V, IDS=2.5A 0.6 RDS(ON) DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=15V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate resistance RG VGS=0V, VDS=0V, f=1MHz SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD=10V, RL=10Ω, IDS=1A, Turn-On Rise Time tR VGEN=4.5V, RG=6Ω Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=10V, VGS=4.5V, IDS=5 A Gate-Source Charge QGS Gate-Drain Charge QDD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage (Note) VSD ISD=3A, VGS=0V Note: Pulse width≦300μs, Duty cycle≦2% V 1 μA ±100 nA 0.9 35 45 110 1.5 40 54 130 450 100 60 2.5 V mΩ pF pF pF Ω 7 15 19 6 11.5 3.8 5.2 10 25 26 7 15 ns ns ns ns nC nC nC 0.7 1.3 V UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 2 QW-R502-289.a