UTC-IC 2N7002LG-AE2-R

UNISONIC TECHNOLOGIES CO., LTD
2N7002L
Preliminary
Power MOSFET
60V, 115mA, N-CHANNEL
MOSFET
„
DESCRIPTION
3
The UTC 2N7002L uses advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
„
FEATURES
1
SOT-23-3
(JEDEC TO-236)
* RDS(ON) = 7.5Ω @VGS = 10 V
* Low Reverse Transfer Capacitance ( CRSS = typical 5 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
„
2
SYMBOL
3. Drain
2.Gate
1.Source
„
„
ORDERING INFORMATION
Ordering Number
Package
2N7002LG-AE2-R
SOT-23-3
1
S
Pin Assignment
2
3
G
D
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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2N7002L
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
PARAMETER
Drain-Source Voltage
Drain-Gate Voltage (RG=1.0MΩ)
Continuous
Gate-Source Voltage
Non-repetitive (tP≦50μs)
SYMBOL
VDSS
VDGR
VGSS
RATINGS
60
60
±20
UNIT
V
V
V
VGSM
±40
V
Continuous(TC=25°C)
±115
ID
mA
Pulse(Note 2)
±800
225
mW
Power Dissipation (Ta = 25°C)
PD
Derate above 25°C
1.8
mW /°C
Junction Temperature
TJ
°C
+150
Storage Temperature
TSTG
°C
-55 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width≦300μs, Duty cycle≦2%
Drain Current
„
THERMAL DATA
PARAMETER
SYMBOL
θJA
Junction to Ambient
„
RATINGS
556
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS(Note)
Gate Threshold Voltage
Drain-Source On-State Voltage
On-State Drain Current
Static Drain-Source On-Resistance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=10µA
VDS=60V, VGS=0V (TJ=25°C)
VGS=±20V, VDS=0V
VGS(TH)
VDS=VGS, ID=250 µA
1.0
VGS=10V, ID=500 mA
VGS=5V, ID=50mA
VDS≧2.0VDS(ON), VGS=10V
500
VGS=10V, ID=500mA(TC=25°C)
VGS=5V, ID=50mA(TC=25°C)
VDS≧2.0VDS(ON), ID=200mA
80
VDS(ON)
ID(ON)
RDS(ON)
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=25V, ID=500mA,
VGEN=10V, RG=25Ω, RL=50Ω
Turn-OFF Delay Time
tD(OFF)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=115mA, VGS=0V
Maximum Body-Diode Continuous Current
IS
Source Current Pulsed
ISM
Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
60
1.0
±100
2.5
3.75
0.375
V
µA
nA
V
V
mA
7.5
7.5
Ω
mS
50
25
5.0
pF
pF
pF
20
40
ns
ns
1.5
115
800
V
mA
mA
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2N7002L
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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