UNISONIC TECHNOLOGIES CO., LTD UT2308 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2308 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2308L-AE3-R UT2308G-AE3-R Package SOT-23 1 S Pin Assignment 2 3 G D Packing Tape Reel MARKING 23G L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-128.d UT2308 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±10 V Continuous Drain Current ID 2.7 A Power Dissipation PD 1.25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta =25°C, unless otherwise specified) PARAMETER SYMBOL OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Drain-Source Leakage Current IDSS Gate-Source Leakage Current IGSS ON CHARACTERISTICS Gate-Threshold Voltage VGS(TH) Static Drain-Source On-State RDS(ON) Resistance (Note2) DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG Gate Source Charge QGS Gate-Drain Charge QGD Note:1. Pulse width limited by TJ(MAX) 2. Pulse width≤300μs, duty cycle≤2%. 3. Surface mounted on FR4 board t≤5 sec. TEST CONDITIONS VGS =0 V, ID =250 µA VDS =20 V, VGS =0 V VDS =0 V, VGS = ±10V 20 VDS =VGS, ID =250 µA VGS =4.5 V, ID =1A VGS =2.5 V, ID =1A 0.4 VGS=4.5V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 0.8 1.0 ±100 V µA nA 1.0 80 110 V mΩ mΩ 215 65 45 pF pF pF 3.8 0.7 0.9 nC nC nC 2 of 3 QW-R502-128.d UT2308 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-128.d