UNISONIC TECHNOLOGIES CO., LTD Preliminary UT9435HZ Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT9435HZ is a P-channel enhancement power MOSFET. It has low gate charge, fast switching speed and perfect RDS(ON). This device is generally applied in power management applications. SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UT9435HZL-S08-R UT9435HZG-S08-R SOP-8 UT9435HZL-S08-T UT9435HZG-S08-T SOP-8 Note: Pin Assignment: G: Gate D: Drain S: Source 1 S S 2 S S Pin Assignment 3 4 5 6 7 S G D D D S G D D D 8 D D Packing Tape Reel Tube UT3435HZL-S08-R (1) Packing Type (1) R: Tape Reel, T: Tube (2) Package Type (2) S08: SOP-8 (3) Lead Free (3) G: Halogen Free, L: Lead Free www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-740.a UT9435HZ Preliminary Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R502-740.a UT9435HZ Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS -30 V Gate to Source Voltage VGSS ±20 V Continuous Drain Current (Note 3) ID ±5.3 A Pulsed Drain Current (Note 1, 2) IDM ±20 A Power Dissipation PD 2.5 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient SYMBOL θJA RATINGS 50 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance (Note 2) SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=-250µA VDS=-30V,VGS=0V VDS=0V ,VGS=±20V -30 VGS(TH) VDS=VGS, ID=-250µA VGS=-10V,ID=-5.3A VGS=-4.5V, ID=-4.2A VDS=-5V, VGS=-10V -1 RDS(ON) On State Drain Current ID(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS=-15V,VGS=0V, Output Capacitance COSS f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 2) QG VDS=-15V,VGS=-10V, Gate-Source Charge QGS ID=-4.6A Gate-Drain Charge QGD Turn-ON Delay Time (Note 2) tD(ON) Turn-ON Rise Time tR VDD=-15V, ID=-1A, VGEN=-10V, RG=6Ω, Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note 2) VSD VGS=0V, IS =-5.3A Notes: 1. Pulse width limited by TJ(MAX). 2. Pulse width ≤300μs, duty cycle ≤2%. 3. Surface Mounted on 1in2 copper pad of FR4 board UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -1 ±5 44 74 -3 50 90 -20 1040 420 150 V µA µA V mΩ mΩ V pF pF pF 22.5 2 6 19 9 74 36 29 26 13 105 50 nC nC nC ns ns ns ns -0.84 -1.3 V 3 of 4 QW-R502-740.a UT9435HZ Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-740.a