UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P06 Power MOSFET 60V, 30A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT30P06 is suitable for low voltage and high speed switching applications FEATURES * RDS(ON)=0.067Ω @ VGS=-10V, ID=-15A * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT30P06L-TA3-T UTT30P06G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube 1 of 3 QW-R502-622.a UTT30P06 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -60 V Drain-Gate Voltage (RGS=1.0 MΩ) VDGR -60 V Continuous VGSS ±15 V Gate-Source Voltage VGSM ±25 V Non−repetitive (tp≤10ms) TC=25°C ID -30 A Continuous Drain Current TC=100°C ID -19 A Pulsed (tp≤10μs) IDM -105 A Power Dissipation 125 W PD Derate Above 25°C 0.83 W/°C Junction Temperature TJ +175 °C Storage Temperature TSTG -55~+175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. When surface mounted to an FR4 board using the minimum recommended pad size. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 62.5 1.2 UNIT °C/W °C/W 2 of 3 QW-R502-622.a UTT30P06 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Forward Current Reverse ON CHARACTERISTICS (Note 1) Gate Threshold Voltage Static Drain-Source On-State Resistance Drain-Source On-Voltage DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS (Note 2) SYMBOL BVDSS IDSS MIN ID=-0.25mA, VGS=0V VDS=-60V, VGS=0V VGS=+15V, VDS=0V VGS=-15V, VDS=0V -60 VGS(TH) VDS=VGS, ID=-250µA RDS(ON) VGS=-10V, ID=-15A VGS=-10V, ID=-30A VDS(ON) VGS=-10V, ID=-15A, TJ=150°C -2.0 IGSS CISS COSS CRSS QT Q1 Q2 Q3 Gate Charge TEST CONDITIONS VGS=0V, VDS=-25V, f=1.0MHz VGS=-10V, VDS=-48V, ID=-30A Turn-ON Delay Time tD(ON) VGS=-10V, VDD=-30V, Rise Time tR I Turn-OFF Delay Time tD(OFF) D=-30A, RG=9.1Ω Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=-30A, VGS=0V Body Diode Reverse Recovery Time tRR IS=-30A, VGS=0V, dIS/dt=-100A/µs Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%. 2. Switching characteristics are independent of operating junction temperature. TYP MAX UNIT -10 +100 -100 V µA nA nA -2.6 0.067 -2.0 -4.0 0.08 -2.9 -2.8 V Ω V V 1562 524 154 2190 730 310 pF pF pF 54 9.0 26 20 14.7 25.9 98 52.4 80 nC nC nC nC ns ns ns ns -2.3 175 0.965 30 50 200 100 -3.0 V ns µC UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-622.a