UNISONIC TECHNOLOGIES CO., LTD UT5504 Power MOSFET P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT5504 is a P-channel enhancement mode power MOSFET, providing customers fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced technology. The UTC UT5504 can be used in applications such as DC/DC converters, all commercial-industrial surface mount and low voltage devices. FEATURES * Low On-Resistance * Simple Drive Requirement * Fast Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT5504L-TM3-T UT5504G-TM3-T UT5504L-TN3-R UT5504G-TN3-R UT5504L-TN3-T UT5504G-TN3-T Note: Pin Assignment: G: Gate, D: Drain, S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-251 TO-252 TO-252 1 G G G Pin Assignment 2 3 D S D S D S Packing Tube Tape Reel Tube 1 of 4 QW-R502-417.C UT5504 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT -40 V ±20 V TC=25°C -8 ID Continuous Drain Current A TC=70°C -6 Pulsed Drain Current IDM -32 A Power Dissipation 41 W PD Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDS VGS THERMAL DATA PARAMETER SYMBOL Junction to Ambient θJA Junction to Case θJC Notes: 1. Pulse width limited by maximum junction temperature. 2. Duty cycle ≤ 1% RATINGS 75 3 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS Drain-Source Leakage Current IDSS Gate- Source Leakage Current On-State Drain Current (Note 1) ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note 1) Forward Transconductance (Note 1) DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS (Note 2) Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall-Time IGSS ID(ON) VGS(TH) RDS(ON) gFS CISS COSS CRSS QG QGS QGD tD(ON) tR tD(OFF) tF TEST CONDITIONS ID=-250µA, VGS=0V VDS=-32V, VGS=0V VDS=-30V, VGS=0V, TJ=125°C VDS=0V, VGS=±20V VDS=-5V, VGS=-10V VDS=VGS, ID=-250µA VGS=-4.5V, ID=-6A VGS=-10V, ID=-8A VDS=-10V, ID=-8A VGS=0V, VDS=-25V, f=1MHz VGS=-10V, VDS=0.5BVDSS, ID=-8A VGS=-10V, VDS=-20V, ID ≒ -1A, RGS=6Ω, RL=1Ω UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -40 V -32 1 µA 10 ±250 nA A -1 -1.5 65 38 11 -2.5 94 55 V mΩ S 690 310 75 pF pF pF 14 2.2 1.9 6.7 9.7 19.8 12.3 nC nC nC ns ns ns ns 13.4 19.4 35.6 22.2 2 of 4 QW-R502-417.C UT5504 Power MOSFET ELECTRICAL CHARACTERISTICS (CONT.) PARAMETER SYMBOL TEST CONDITIONS SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note 1) VSD IF=IS, VGS=0V Reverse Recovery Time tRR IF=-5A, dIF/dt=100A/µs Reverse Recovery Charge QRR Continuous Current IS Pulsed Current (Note 3) ISM Note: 1. Pulse test: Pulse Width ≤ 300µsec, Duty Cycle ≤ 2％. 2. Independent of operating temperature. 3. Pulse width limited by maximum junction temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -1 15.5 7.9 -8 -32 V ns nC A A 3 of 4 QW-R502-417.C UT5504 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, -ID (µA) 300 Drain Current vs. Drain-Source Breakdown Voltage 250 Drain Current vs. Gate Threshold Voltage 300 Drain Current, -ID (µA) 200 150 100 50 250 200 150 100 50 0 0 0 0.5 1 1.5 2 2.5 3 Gate Threshold Voltage, -VTH (V) Drain Current, -ID (A) Drain Current, -ID (A) 0 10 30 40 50 60 20 Drain-Source Breakdown Voltage, -BVDSS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-417.C