TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS(on) = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DOMS technology. • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutationmode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant D G D S TO-220 FDP Series TO-220F FDPF Series (potted) GD S G S MOSFET Maximum Ratings TC = 25 C unless otherwise noted* o Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current FDP5N50U FDPF5N50UT 500 Units V ±30 -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) V 4 4* 2.4 2.4* IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 4 A EAR Repetitive Avalanche Energy (Note 1) 8.5 mJ dv/dt Peak Diode Recovery dv/dt 16* (Note 2) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds - Derate above 25oC A 216 (Note 3) (TC = 25oC) PD TL 16 A mJ 20 V/ns 85 28 W 0.67 0.22 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics FDP5N50U FDPF5N50UT RθJC Symbol Thermal Resistance, Junction to Case Parameter 1.4 4.5 RθCS Thermal Resistance, Case to Sink Typ. 0.5 - RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2012 Fairchild Semiconductor Corporation FDP5N50U / FDPF5N50UT Rev.C1 1 Units o C/W www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET May2012 Device Marking FDP5N50U Device FDP5N50U Package TO-220 Reel Size - Tape Width - Quantity 50 FDPF5N50UT FDPF5N50UT TO-220F - - 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V ID = 250μA, Referenced to 25oC - 0.7 - V/oC VDS = 500V, VGS = 0V Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current - - 25 VDS = 400V, TC = 125oC - - 250 VGS = ±30V, VDS = 0V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA 3 - 5 V Static Drain to Source On Resistance VGS = 10V, ID = 2A - 1.65 2 Ω gFS Forward Transconductance VDS = 40V, ID = 2A - 4.8 - S - 485 650 pF - 65 90 pF (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 4A VGS = 10V (Note 4, 5) - 5 8 pF - 11 15 nC - 3 - nC - 5 - nC - 14 38 ns - 21 52 ns - 27 64 ns - 20 50 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 4A RG = 25Ω (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 4 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 16 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 4A - - 1.6 V trr Reverse Recovery Time - 36 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 4A dIF/dt = 100A/μs - 33 - nC (Note 4) Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 27mH, IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 4A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP5N50U / FDPF5N50UT Rev.C1 2 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 2. Transfer Characteristics 10 10 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 1 o 150 C ID,Drain Current[A] ID,Drain Current[A] Figure 1. On-Region Characteristics 0.1 o 25 C 1 *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 0.02 0.1 2. TC = 25 C 0.1 1 10 VDS,Drain-Source Voltage[V] 30 5 6 7 VGS,Gate-Source Voltage[V] 8 2.6 30 IS, Reverse Drain Current [A] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature RDS(ON) [Ω], Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2.2 VGS = 10V VGS = 20V 1.8 o 1.4 *Note: TJ = 25 C 0 6 12 ID, Drain Current [A] 18 Figure 5. Capacitance Characteristics Ciss *Note: 1. VGS = 0V 2. f = 1MHz Coss 400 *Notes: 1. VGS = 0V 2. 250μs Pulse Test 1.0 1.6 VSD, Body Diode Forward Voltage [V] 2.2 10 VGS, Gate-Source Voltage [V] 600 o 25 C Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 800 o 150 C 10 1 0.4 1000 Capacitances [pF] 4 200 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 Crss 0 0.1 1 10 VDS, Drain-Source Voltage [V] FDP5N50U / FDPF5N50UT Rev.C1 0 30 3 *Note: ID = 4A 0 4 8 Qg, Total Gate Charge [nC] 12 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area - FDP5N50U 30 50μs 10 ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 1ms 10ms 1 DC Operation in This Area is Limited by R DS(on) 0.1 *Notes: o 1. TC = 25 C *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] o 0.01 175 Figure 9. Maximum Safe Operating Area - FDPF5N50UT 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 10. Maximum Drain Current vs. Case Temperature 5 30 30μs 10 100μs 4 1ms ID, Drain Current [A] ID, Drain Current [A] 100μs 10ms 1 DC Operation in This Area is Limited by R DS(on) 0.1 *Notes: o 3 2 1 1. TC = 25 C o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve - FDP5N50U Thermal Response [ZθJC] 3 1 0.5 0.2 PDM 0.1 0.1 t1 0.05 0.02 0.01 o 1. ZθJC(t) = 1.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 FDP5N50U / FDPF5N50UT Rev.C1 t2 *Notes: -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 0 10 1 10 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve - FDPF5N50UT Thermal Response [ZθJC] 10 0.5 1 0.2 0.1 0.1 t1 0.01 t2 *Notes: o 0.01 1. ZθJC(t) = 4.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.003 -5 10 FDP5N50U / FDPF5N50UT Rev.C1 PDM 0.05 0.02 -4 10 -3 10 -2 -1 0 1 10 10 10 10 Rectangular Pulse Duration [sec] 5 2 10 3 10 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP5N50U / FDPF5N50UT Rev.C1 6 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDP5N50U / FDPF5N50UT Rev.C1 7 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Mechanical Dimensions TO-220 FDP5N50U / FDPF5N50UT Rev.C1 8 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Package Dimensions TO-220F Potted * Front/Back Side Isolation Voltage : AC 2500V Dimensions in Millimeters FDP5N50U / FDPF5N50UT Rev.C1 9 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 www.fairchildsemi.com FDP5N50U / FDPF5N50UT Rev.C1 10 FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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