FAIRCHILD FDA20N50F_12

UniFETTM
FDA20N50F
tm
N-Channel MOSFET
500V, 22A, 0.26Ω
Features
Description
• RDS(on) = 0.22Ω ( Typ.) @ VGS = 10V, ID = 11A
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low gate charge ( Typ. 50nC )
• Low Crss ( Typ. 27pF )
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These device are well suited for high
efficient switched mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
D
G
G DS
TO-3PN
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
-Continuous (TC = 25oC)
Ratings
500
Units
V
±30
V
22
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
22
A
EAR
Repetitive Avalanche Energy
(Note 1)
39
mJ
dv/dt
Peak Diode Recovery dv/dt
20
V/ns
-Continuous (TC = 100oC)
- Pulsed
88
A
(Note 2)
1110
mJ
(Note 3)
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
(Note 1)
(TC = 25oC)
PD
A
13
- Derate above 25oC
388
W
3.1
W/oC
-55 to +150
o
C
300
o
C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case
RθCS
Thermal Resistance, Case to Sink
RθJA
Thermal Resistance, Junction to Ambient
©2012 Fairchild Semiconductor Corporation
FDA20N50F Rev.C0
1
Min.
Max.
-
0.44
0.24
-
-
40
Units
o
C/W
www.fairchildsemi.com
FDA20N50F N-Channel MOSFET
January 2012
Device Marking
FDA20N50F
Device
FDA20N50F
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
500
-
-
V
ID = 250μA, Referenced to 25 C
-
0.6
-
V/oC
VDS = 500V, VGS = 0V
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250μA, VGS = 0V, TJ = 25oC
o
-
-
10
VDS = 400V, TC = 125oC
-
-
100
VGS = ±30V, VDS = 0V
-
-
±100
3.0
-
5.0
V
-
0.22
0.26
Ω
-
24
-
S
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
Static Drain to Source On Resistance
VGS = 10V, ID = 11A
gFS
Forward Transconductance
VDS = 40V, ID = 11A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 20A
VGS = 10V
(Note 4, 5)
-
2550
3390
pF
-
350
465
pF
-
27
40
pF
-
50
65
nC
-
14
-
nC
-
20
-
nC
-
45
100
ns
-
120
250
ns
-
100
210
ns
-
60
130
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 20A
RG = 25Ω
(Note 4, 5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
22
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
88
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 22A
-
-
1.5
V
trr
Reverse Recovery Time
-
154
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 20A
dIF/dt = 100A/μs
-
0.5
-
μC
(Note 4)
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 5mH, IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 22A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
FDA20N50F Rev.C0
2
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FDA20N50F N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
ID,Drain Current[A]
ID,Drain Current[A]
80
o
10
150 C
o
25 C
*Notes:
1. 250μs Pulse Test
1
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
o
0.5
0.1
2. TC = 25 C
1
VDS,Drain-Source Voltage[V]
1
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4
6
VGS,Gate-Source Voltage[V]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
0.8
IS, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
0.7
0.6
0.5
0.4
VGS = 10V
0.3
VGS = 20V
0.2
o
150 C
10
o
25 C
1
*Notes:
1. VGS = 0V
o
0.1
*Note: TJ = 25 C
0
25
50
ID, Drain Current [A]
0.2
0.0
75
Figure 5. Capacitance Characteristics
Coss
3000
Ciss
1.5
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4500
0.5
1.0
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
VGS, Gate-Source Voltage [V]
Capacitances [pF]
6000
2. 250μs Pulse Test
*Note:
1. VGS = 0V
2. f = 1MHz
1500
VDS = 100V
VDS = 250V
VDS = 400V
8
6
4
2
Crss
0
0.1
FDA20N50F Rev.C0
1
10
VDS, Drain-Source Voltage [V]
0
50
3
*Note: ID = 20A
0
10
20
30
40
50
Qg, Total Gate Charge [nC]
60
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FDA20N50F N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
200
1.2
30μs
ID, Drain Current [A]
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
100
1.1
1.0
100μs
10
1ms
DC
1
*Notes:
0.9
o
1. TC = 25 C
*Notes:
1. VGS = 0V
2. ID = 250μA
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
10ms
Operation in This Area
is Limited by R DS(on)
o
0.1
200
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 9. Maximum Drain Current
vs. Case Temperature
25
ID, Drain Current [A]
20
15
10
5
0
25
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 10. Transient Thermal Response Curve
Thermal Response [ZθJC]
1
0.5
0.1
0.2
0.1
0.01
t1
0.02
t2
*Notes:
0.01
o
1. ZθJC(t) = 0.44 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
1E-3
-5
10
FDA20N50F Rev.C0
PDM
0.05
-4
10
-3
-2
10
10
Rectangular Pulse Duration [sec]
4
-1
10
0
10
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FDA20N50F N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDA20N50F N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDA20N50F Rev.C0
5
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FDA20N50F N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
FDA20N50F Rev.C0
6
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FDA20N50F N-Channel MOSFET
Mechanical Dimensions
TO-3PN
FDA20N50F Rev.C0
7
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tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
FDA20N50F Rev.C0
8
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FDA20N50F N-Channel MOSFET
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