FAIRCHILD FDPF10N60NZ

UniFET-II
TM
FDP10N60NZ / FDPF10N60NZ
N-Channel MOSFET
600V, 10A, 0.75
Features
Description
• RDS(on) = 0.64 ( Typ.)@ VGS = 10V, ID = 5A
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low Gate Charge ( Typ. 23nC)
• Low Crss ( Typ. 10pF)
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS compliant
D
G
G D S
TO-220
FDP Series
TO-220F
FDPF Series
(potted)
GDS
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
FDP10N60NZ
FDPF10N60NZ
600
Units
V
±25
V
- Continuous (TC = 25oC)
10
10*
- Continuous (TC = 100oC)
6
6*
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
10
A
EAR
Repetitive Avalanche Energy
(Note 1)
18.5
mJ
dv/dt
Peak Diode Recovery dv/dt
- Pulsed
40
40*
(Note 2)
A
550
(Note 3)
mJ
10
V/ns
(TC = 25oC)
185
38
W
- Derate above 25oC
1.5
0.3
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
(Note 1)
A
-55 to +150
o
C
300
o
C
*Dran current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP10N60NZ
FDPF10N60NZ
RJC
Thermal Resistance, Junction to Case
0.68
3.3
RCS
Thermal Resistance, Case to Sink Typ
0.5
-
RJA
Thermal Resistance, Junction to Ambient
62.5
62.5
©2010 Fairchild Semiconductor Corporation
FDP10N60NZ / FDPF10N60NZ Rev. A
1
Units
o
C/W
www.fairchildsemi.com
FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET
September 2010
Device Marking
FDP10N60NZ
Device
FDP10N60NZ
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
FDPF10N60NZ
FDPF10N60NZ
TO-220F
-
-
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
600
-
-
V
-
0.6
-
V/oC
A
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250A, VGS = 0V, TJ = 25oC
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
-
-
1
VDS = 480V, TC = 125oC
-
-
10
IGSS
Gate to Body Leakage Current
VGS = ±25V, VDS = 0V
-
-
±10
ID = 250A, Referenced to
25oC
A
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250A
3.0
-
5.0
V
Static Drain to Source On Resistance
VGS = 10V, ID = 5A
-
0.64
0.75

gFS
Forward Transconductance
VDS = 20V, ID = 5A
-
14
-
S
VDS = 25V, VGS = 0V
f = 1MHz
-
1110
1475
pF
-
130
175
pF
-
10
15
pF
-
23
30
nC
-
6
-
nC
-
8
-
nC
-
25
60
ns
-
50
110
ns
-
70
150
ns
-
50
110
ns
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 480V, ID = 10A
VGS = 10V
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 300V, ID = 10A
RG = 25
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
10
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
40
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 10A
-
-
1.4
V
trr
Reverse Recovery Time
-
300
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 10A
dIF/dt = 100A/s
-
2
-
C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 11mH, IAS = 10A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 10A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25C
4.Pulse test: Pulse width s,Duty Cycle 
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP10N60NZ / FDPF10N60NZ Rev. A
2
www.fairchildsemi.com
FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
10
VGS = 15.0V
10.0V
8.0V
7.0V
6.0V
5.5V
ID, Drain Current[A]
ID, Drain Current[A]
30
10
o
150 C
o
25 C
o
-55 C
1
*Notes:
1. VDS = 20V
2. 250s Pulse Test
*Notes:
1. 250s Pulse Test
1
o
2. TC = 25 C
0.1
0.5
0.5
1
VDS, Drain-Source Voltage[V]
2
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1.0
100
0.9
IS, Reverse Drain Current [A]
RDS(ON) [],
Drain-Source On-Resistance
4
6
8
VGS, Gate-Source Voltage[V]
0.8
VGS = 10V
0.7
VGS = 20V
0.6
10
o
150 C
o
25 C
1
*Notes:
1. VGS = 0V
o
2. 250 s Pulse Test
*Note: TC = 25 C
0.5
0
5
10
15
ID, Drain Current [A]
0.1
0.2
20
Figure 5. Capacitance Characteristics
0.4
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
1.4
Figure 6. Gate Charge Characteristics
4000
10
VGS, Gate-Source Voltage [V]
Ciss
Capacitances [pF]
1000
Coss
100
Crss
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1 -1
10
*Note:
1. VGS = 0V
2. f = 1MHz
1
10
VDS, Drain-Source Voltage [V]
FDP10N60NZ / FDPF10N60NZ Rev. A
VDS = 120V
VDS = 300V
VDS = 480V
8
6
4
2
*Note: ID = 10A
0
30
0
3
5
10
15
20
Qg, Total Gate Charge [nC]
25
www.fairchildsemi.com
FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.75
2.5
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.15
1.10
1.05
1.00
0.95
0.90
-100
*Notes:
1. VGS = 0V
2. ID = 250A
-50
0
50
100
o
TJ, Junction Temperature [ C]
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 5A
0.5
0.25
-100
150
Figure 9. Maximum Safe Operating Area
-FDP10N60NZ
150
100
ID, Drain Current [A]
30 s
10
100 s
1ms
1
10ms
Operation in This Area
is Limited by R DS(on)
DC
*Notes:
0.1
30s
10
100s
1ms
1
10ms
Operation in This Area
is Limited by R DS(on)
*Notes:
0.1
o
o
1. TC = 25 C
1. TC = 25 C
DC
o
o
2. TJ = 150 C
3. Single Pulse
2. TJ = 150 C
3. Single Pulse
0.01
0.1
-50
0
50
100
o
TJ, Junction Temperature [ C]
Figure 10. Maximum Safe Operating Area
-FDPF10N60NZ
100
ID, Drain Current [A]
2.0
0.01
1
1
10
100
1000 3000
VDS, Drain-Source Voltage [V]
10
100
1000 3000
VDS, Drain-Source Voltage [V]
Figure 11. Maximum Drain Current vs.
Case Temperature
10
ID, Drain Current [A]
8
6
4
2
0
25
50
75
100
125
o
TC, Case Temperature [ C]
FDP10N60NZ / FDPF10N60NZ Rev. A
150
4
www.fairchildsemi.com
FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal
-FDP10N60NZ
Response Curve
2
Thermal Response [ZJC]
1
0.5
0.2
0.1
PDM
0.1
t1
0.05
t2
*Notes:
0.02
o
1. ZJC(t) = 0.68 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.01
Single pulse
0.01
0.005
-5
10
-4
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
Figure 13. Transient Thermal
-FDPF10N60NZ
1
10
Response Curve
5
Thermal Response [ZJC]
0.5
1
0.2
0.1
0.05
0.1
PDM
0.02
0.01
t1
*Notes:
0.01
0.001
-5
10
FDP10N60NZ / FDPF10N60NZ Rev. A
t2
o
1. ZJC(t) = 3.3 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
-4
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
5
1
10
www.fairchildsemi.com
FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP10N60NZ / FDPF10N60NZ Rev. A
6
www.fairchildsemi.com
FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
FDP10N60NZ / FDPF10N60NZ Rev. A
7
www.fairchildsemi.com
FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET
Mechanical Dimensions
TO-220
FDP10N60NZ / FDPF10N60NZ Rev. A
8
www.fairchildsemi.com
FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET
Package Dimensions
TO-220F
* Front/Back Side Isolation Voltage : AC 2500V
Dimensions in Millimeters
FDP10N60NZ / FDPF10N60NZ Rev. A
9
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I48
FDP10N60NZ / FDPF10N60NZ Rev. A
10
www.fairchildsemi.com
FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET
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