WCMC2016V1X ADVANCE INFORMATION General Physical Specification 128K x 16 Pseudo Static RAM DIE For product parameters and availability, please refer to the WCMC2016V1X product datasheet available on the Cypress Semiconductor Website (http://www.cypress.com). Mfg Part Number: GC2016V5A Die Part Number: Substrate Connection Req.: Ground Wafer Diameter [mm]: 200.00 Die Technology: PowerChip 0.165 µm Metal I: 420 nm TiN/AlCu Metal II: 880 nm TiN/Ti/AlCu/TiN Die Size [µm]: 4010.74 x 1565.84 Step Size [µm]: 4095.44 x 1650.89 Scribe Size [µm]: 84.70 x 84.94 Metal III: None Pad Count: 64 Die Passivation: 780nm P-Si3N4 + Polyimide Pad Size [µm]: 73.6 x 73.6 Product Thickness Guide Code Description Min Nom Max Unit XW Die (25-30 mil) in wafer form. 617 685 754 µm XW14 Die (14 mil) in wafer form. 320 355 391 µm XW11 Die (11 mil) in wafer form. 252 280 308 µm Weida Semiconductor, Inc. 38-xyxyx Revised August 22, 2001 ADVANCE INFORMATION WCMC2016V1X Bond Pad Locations 64 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 63 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 38-xyxyx Page - 2 - of 5 ADVANCE INFORMATION WCMC2016V1X All units in µm. (0,0) is the lower Left hand corner of the die. Bond Pad Coordinates and Signal Descriptions 38-xyxyx ID Pad Name Pad Function Description X Coord [µm] Y Coord [µm] 1 A15 ADDR Address 98.31 3950.48 2 TEST1 3 A14 DNU Do Not Use 98.31 3851.12 ADDR Address 98.31 3751.76 4 5 TEST2 DNU Do Not Use 98.31 3652.40 A13 ADDR Address 98.31 3553.04 6 A12 ADDR Address 98.31 3453.68 7 A11 ADDR Address 98.31 3354.32 8 A10 ADDR Address 98.31 3254.96 9 A9 ADDR Address 98.31 3155.60 10 A8 ADDR Address 98.31 3056.24 11 TEST3 DNU Do Not Use 98.31 2956.88 11 TEST4 DNU Do Not Use 98.31 2857.52 12 WE WE Write Enable/Select Bar 98.31 2758.16 13 CE2 CE2 Chip Enable/Select 2 98.31 2658.80 14 VCC VCC Power Supply (Core) 98.31 2559.44 15 VCC VCC Power Supply (Core) 98.31 2460.08 16 VSS GND Ground (also VSS) 98.31 2261.36 17 VSS GND Ground (also VSS) 98.31 2201.66 18 UBE BHE Byte (High) Enable/Select Bar 98.31 2261.36 19 LBE BLE Byte (Low) Enable/Select Bar 98.31 2162.00 20 TEST5 DNU Do Not Use 98.31 2062.64 20 TEST6 DNU Do Not Use 98.31 1963.28 20 TEST7 DNU Do Not Use 98.31 1863.92 21 A17 ADDR Address 98.31 1764.56 22 A7 ADDR Address 98.31 1665.20 23 A6 ADDR Address 98.31 1565.84 24 A5 ADDR Address 98.31 1466.48 25 A4 ADDR Address 98.31 1367.12 26 A3 ADDR Address 98.31 1267.76 27 A2 ADDR Address 98.31 1168.40 28 A1 ADDR Address 98.31 1069.04 29 A16 ADDR Address 1467.54 3909.67 30 VSS GND Ground 1467.54 3810.31 31 VCC VCC Power Supply (Core) 1467.54 3710.95 32 I/O15 DQ15 Bi-directional Data Input/Output 15 1467.54 3611.59 33 I/O7 DQ7 Bi-directional Data Input/Output 7 1467.54 3484.95 34 I/O14 DQ14 Bi-directional Data Input/Output 14 1467.54 3358.31 35 I/O6 DQ6 Bi-directional Data Input/Output 6 1467.54 3231.67 Page - 3 - of 5 ADVANCE INFORMATION WCMC2016V1X ID Pad Name Pad Function Description X Coord [µm] Y Coord [µm] 36 I/O13 DQ13 Bi-directional Data Input/Output 13 1467.54 3105.04 37 I/O5 DQ5 Bi-directional Data Input/Output 5 1467.54 2978.4 38 I/O12 DQ12 Bi-directional Data Input/Output 12 1467.54 2851.76 39 I/O4 DQ4 Bi-directional Data Input/Output 4 1467.54 2725.12 40 VSS GND Ground (also VSS) 1467.54 2598.20 41 VSS GND Ground (also VSS) 1467.54 2498.84 42 VSS GND Ground (also VSS) 1467.54 2399.48 43 VCC VCC Power Supply (Core) 1467.54 2300.12 44 VCC VCC Power Supply (Core) 1467.54 2200.76 45 VCC VCC Power Supply (Core) 1467.54 2101.40 46 I/O11 DQ11 Bi-directional Data Input/Output 11 1467.54 2002.04 47 I/O3 DQ3 Bi-directional Data Input/Output 3 1467.54 1875.40 48 I/O10 DQ10 Bi-directional Data Input/Output 10 1467.54 1748.76 49 I/O2 DQ2 Bi-directional Data Input/Output 2 1467.54 1622.13 50 I/O9 DQ9 Bi-directional Data Input/Output 9 1467.54 1495.49 51 I/O1 DQ1 Bi-directional Data Input/Output 1 1467.54 1368.85 52 I/O8 DQ8 Bi-directional Data Input/Output 8 1467.54 1242.21 53 I/O0 DQ0 Bi-directional Data Input/Output 0 1467.54 1115.57 54 TEST8 DNU Do Not Use 1467.54 988.61 55 TEST9 DNU Do Not Use 1467.54 843.80 58 OE# OE Output Enable 1467.54 744.44 59 VSS GND Ground 1467.54 645.08 60 VCC VCC Power Supply (Core) 1467.54 545.72 61 TEST10 DNU Do Not Use 1467.54 446.36 62 A0 ADDR Address 1467.54 347.00 Die Ordering Information Silicon Type KGD2 Ordering Code Wafer Code Wafer/Die Type WCMC2016V1X-2XWI XW Die (25-30 mil) in wafer form. WCMC2016V1X-2XW14I XW14 Die (14 mil) in wafer form. WCMC2016V1X-2XW11I XW11 Die (11 mil) in wafer form. Operating Range Industrial This datasheet is prepared and approved by Weida Semiconductor, Inc.. Weida Semidonductor, Inc. reserve the right to change the specifications without notice. More Battery Life is a trademark, and MoBL is a registered trademark, of Cypress Semiconductor. 38-xyxyx Page - 4 - of 5 © Weida Semiconductor, Inc., 2003. The information contained herein is subject to change without notice. Weida Semiconductor assumes no responsibility for the use of any circuitry other than circuitry embodied in a Weida Semiconductor product. Nor does it convey or imply any license under patent or other rights. Weida Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Weida Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Weida Semiconductor against all charges. ADVANCE INFORMATION WCMC2016V1X Revision History Document Title: WCMC2016V1X MoBL3® 2 Mb (128K x 16) Pseudo Static RAM DI Document Number: 38-xyxyx Rev ** 38-xyxyx ECN Issue Date Orig. Change MPR Description of Change New Datasheet Page - 5 - of 5