FAIRCHILD FDW9926A_08

FDW9926A
Dual N-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 10V).
• 4.5 A, 20 V.
Applications
• Extended VGSS range (±10V) for battery applications
• Battery protection
• High performance trench technology for extremely
low RDS(ON)
RDS(ON) = 32 mΩ @ VGS = 4.5 V
RDS(ON) = 45 mΩ @ VGS = 2.5 V
• Optimized for use in battery circuit applications
• Load switch
• Power management
• Low profile TSSOP-8 package
G2
S2
S2
D2
G1
S1
S1
D1
TSSOP-8
1
8
2
7
3
6
4
5
Pin 1
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
(Note 1a)
4.5
A
PD
Total Power Dissipation
(Note 1a)
1.0
(Note 1b)
0.6
– Continuous
– Pulsed
TJ, TSTG
30
W
–55 to +150
°C
(Note 1a)
125
°C/W
(Note 1b)
208
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
9926A
FDW9926A
13’’
12mm
2500 units
2008 Fairchild Semiconductor Corporation
FDW9926A Rev E1(W)
FDW9926A
July 2008
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
ID = 250 µA
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25°C
VDS = 16 V,
VGS = 0 V
1
µA
IGSS
Gate–Body Leakage
VGS = ±12 V,
VDS = 0 V
±100
nA
ID = 250 µA
1.5
V
On Characteristics
20
V
12
mV/°C
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 250 µA, Referenced to 25°C
0.6
1.0
–3
VGS = 4.5 V,
ID = 4.5 A
VGS = 2.5 V,
ID = 3.8 A
VGS = 4.5 V, ID = 4.5A, TJ=125°C
24
34
33
ID(on)
On–State Drain Current
VGS = 4.5 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 5 V,
ID = 4.5 A
19
S
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
630
pF
mV/°C
32
45
48
15
mΩ
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VGS = 15 mV, f = 1.0 MHz
150
pF
85
pF
1.4
Ω
(Note 2)
VDD = 10 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 10 V,
VGS = 4.5 V
ID = 4.5 A,
8
16
ns
8
16
ns
15
26
ns
4
8
ns
6.1
9
nC
1.1
nC
1.8
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V,
IS = 0.83 A
IF = 4.5 A,
diF/dt = 100 A/µs
(Note 2)
0.69
0.83
A
1.2
V
14
nS
4
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) RθJA is 208 °C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDW9926A Rev. E1(W)
FDW9926A
Electrical Characteristics
FDW9926A
Typical Characteristics
2.4
30
ID, DRAIN CURRENT (A)
25
4.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.0V
VGS = 10.0V
3.5V
2.5V
20
15
10
2.0V
5
0
VGS = 2.0V
2.2
2
1.8
1.6
2.5V
1.4
3.0V
3.5V
1.2
4.5V
10.0V
1
0.8
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
30
0.09
ID = 4.5A
VGS = 10V
ID = 2.25A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
25
Figure 2. On-Resistance Variation with
Drain Current and Gate voltage.
1.6
1.4
1.2
1
0.8
0.07
0.05
TA = 125oC
0.03
o
TA = 25 C
0.6
0.01
-50
-25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (oC)
125
150
0
Figure 3. On-Resistance Variation with
temperature.
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
100
TA = -55oC
25
VGS = 0V
o
125 C
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
4.0V
20
o
25 C
15
10
5
10
TA = 125oC
1
0.1
25oC
0.01
o
-55 C
0.001
0.0001
0
0.5
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
3
Figure 5. Transfer Characteristics.
3.5
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW9926A Rev. E1(W)
FDW9926A
Typical Characteristics
900
ID = 4.5A
VDS = 5V
f = 1MHz
VGS = 0 V
15V
4
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
5
10V
3
2
600
Ciss
300
Coss
1
Crss
0
0
0
1
2
3
4
5
Qg, GATE CHARGE (nC)
6
7
0
8
Figure 7. Gate Charge Characteristics.
8
12
16
VDS, DRAIN TO SOURCE VOLTAGE (V)
P(pk), PEAK TRANSIENT POWER (W)
50
100us
RDS(ON) LIMIT
1ms
10
10ms
100ms
1s
10s
1
DC
VGS = 4.5V
SINGLE PULSE
RθJA = 208oC/W
0.1
TA = 25oC
0.01
0.1
1
10
100
SINGLE PULSE
RθJA = 208°C/W
TA = 25°C
40
30
20
10
0
0.001
0.01
0.1
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
20
Figure 8. Capacitance Characteristics.
100
ID, DRAIN CURRENT (A)
4
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA =208 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW9926A Rev. E1(W)
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not intended to be an exhaustive list of all such trademarks.
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FRFET®
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™
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tm
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FACT®
FAST®
FastvCore™
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®
tm
PDP SPM™
Power-SPM™
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QFET®
QS™
Quiet Series™
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Saving our world, 1mW at a time™
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®
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tm
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I35
FDW9926A Rev. E1(W)