FDD5670 60V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. extremely low RDS(ON) in a small package. • 52 A, 60 V RDS(ON) = 15 mΩ @ VGS = 10 V RDS(ON) = 18 mΩ @ VGS = 6 V • Low gate charge • Fast switching Applications • High performance trench technology for extremely low RDS(ON) • DC/DC converter • Motor drives D D G G S TO-252 S Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Drain Current A – Continuous – Pulsed PD (Note 3) 52 (Note 1a) 150 (Note 1) 83 (Note 1a) 3.8 Power Dissipation for Single Operation (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range W 1.6 -55 to +175 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 1.8 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD5670 FDD5670 13’’ 16mm 2500 units ©2011 Fairchild Semiconductor Corporation FDD5670 Rev B2 FDD5670 November 2011 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, VDD = 20 V, ID = 10A 360 mJ 10 A Off Characteristics VGS = 0 V, ID = 250 μA 60 V BVDSS ΔBVDSS ===ΔTJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 μA nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA On Characteristics VGS(th) ΔVGS(th) ===ΔTJ RDS(on) ID = 250 μA, Referenced to 25°C 53 mV/°C (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VDS = VGS, ID = 250 μA ID = 250 μA, Referenced to 25°C Static Drain–Source On–Resistance 2 2.5 –6 4 12 14 19 15 18 26 V mV/°C ID(on) On–State Drain Current VGS = 10 V, ID = 10 A VGS = 6 V, ID = 9 A VGS = 10 V, ID = 10 A, TJ = 125°C VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 10 A 27 VDS = 15 V, f = 1.0 MHz V GS = 0 V, 2739 pF 441 pF 182 pF mΩ 60 A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDD = 30 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω VDS = 15 V, VGS = 10 V ID = 10 A, 20 32 12 24 ns ns 60 95 ns 24 38 ns 52 73 nC 10 nC 13 nC Drain–Source Diode Characteristics and Maximum Ratings VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.5 A (Note 2) 0.74 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD RDS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD5670 Rev. B2 FDD5670 Electrical Characteristics FDD5670 Typical Characteristics 2 VGS = 10V 5.0V 6.0V 50 ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 60 4.5V 40 4.0V 30 20 10 3.5V 1.8 VGS = 4.0V 1.6 1.4 4.5V 5.0V 1.2 6.0V 10V 0.8 0 0 1 2 3 0 4 10 20 Figure 1. On-Region Characteristics. 40 50 60 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.05 1.8 ID =10A VGS = 10V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 ID = 10 A 0.04 0.03 TA = 125oC 0.02 TA = 25oC 0.01 0 150 3 4 5 TJ, JUNCTION TEMPERATURE (oC) 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 60 TA = -55oC 25oC IS, REVERSE DRAIN CURRENT (A) VDS = 5V 125oC 50 ID, DRAIN CURRENT (A) 7.0V 1 40 30 20 10 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 2 2.5 3 3.5 4 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDD5670 Rev. B2 FDD5670 Typical Characteristics 10 5000 f = 1MHz VGS = 0 V 20V 8 4000 30V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) VDS = 10V ID = 11A 6 4 2 CISS 3000 2000 COSS 1000 CRSS 0 0 0 10 20 30 40 50 60 0 10 Qg , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 40 50 P(pk), PEAK TRANSIENT POWER (W) 800 100μs ID, DRAIN CURRENT (A) 30 RDS(ON) LIMIT 100 1ms 10ms 10 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE RθJA = 96oC/W 0.1 TC = 25oC 1 10 SINGLE PULSE RθJA = 96°C/W TC = 25°C 600 400 200 0 0.0001 0.01 0.1 60 Figure 8. Capacitance Characteristics. 1000 100 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJC(t) = r(t) x RθJC RθJA = 96 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TC = P x RθJC (t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDD5670 Rev. B2 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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