FDD6685 30V P-Channel PowerTrench MOSFET Features General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench • –40 A, –30 V. RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON) = 30 mΩ @ VGS = –4.5 V process. It has been optimized for power management • Fast switching speed applications requiring a wide range of gave drive • High performance trench technology for extremely low RDS(ON) voltage ratings (4.5V – 25V). • High power and current handling capability • Qualified to AEC Q101 S D G G S TO-252 D Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Drain-Source Voltage Ratings –30 Units VDSS VGSS Gate-Source Voltage ±25 V –40 –11 –100 A (Note 1) 52 W (Note 1a) 3.8 ID PD Parameter Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed, PW ≤ 100µs (Note 1b) Power Dissipation for Single Operation (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range V 1.6 –55 to +175 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.9 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2011 Fairchild Semiconductor Corporation FDD6685 Rev D1 FDD6685 May 2011 FDD6685 Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDD6685 FDD6685 13” 12mm 2500 units Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 42 mJ –11 A Drain-Source Avalanche Ratings (Note 4) EAS IAS Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current ID = –11 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA, Referenced to 25°C VDS = –24 V, VGS = 0 V –1 µA IGSS Gate–Body Leakage VGS = ±25V, VDS = 0 V ±100 nA On Characteristics –30 V –24 mV/°C (Note 2) VGS(th) ∆VGS(th) ∆TJ Gate Threshold Voltage VDS = VGS, ID = –250 µA Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 5 RDS(on) Static Drain–Source On–Resistance 14 21 20 ID(on) On–State Drain Current VGS = –10 V, ID = –11 A VGS = –4.5 V, ID = –9 A VGS = –10 V,ID = –11 A,TJ=125°C VGS = –10 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –11 A 26 S VDS = –15 V, f = 1.0 MHz V GS = 0 V, 1715 pF 440 pF 225 pF Ω –1 –1.8 –3 V mV/°C 20 30 –20 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics VGS = 15 mV, f = 1.0 MHz 3.6 VDD = –15 V, VGS = –10 V, ID = –1 A, RGEN = 6 Ω 17 31 ns 11 21 ns ns (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time 43 68 tf Turn–Off Fall Time 21 34 ns Qg Total Gate Charge 17 24 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –15V, VGS = –5 V ID = –11 A, 9 nC 4 nC Drain–Source Diode Characteristics and Maximum Ratings VSD Trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = –3.2 A IF = –11 A, diF/dt = 100 A/µs (Note 2) –0.8 –1.2 V 26 ns 13 nC FDD6685 Rev D1 FDD6685 Electrical Characteristics TA = 25°C unless otherwise noted Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD RDS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. 4. Starting TJ = 25°C, L = 0.69mH, IAS = –11A FDD6685 Rev D1 FDD6685 Typical Characteristics 40 2.4 VGS = -10V -4.5V -ID, DRAIN CURRENT (A) -6.0V NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.0V -5.0V 30 -3.5V 20 10 -3.0V 0 1 2 -VDS, DRAIN-SOURCE VOLTAGE (V) 1.8 -4.0V 1.6 -4.5V -5.0V 1.4 -6.0V 1.2 -8.0V -10V 1 0 3 Figure 1. On-Region Characteristics. 2 4 6 -ID, DRAIN CURRENT (A) 8 10 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.08 ID = -11.0A VGS = -10V ID = -5.5A RDS(ON), ON-RESISTANCE (OHM) NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 0.8 0 1.4 1.2 1 0.8 0.6 0.06 0.04 o TA = 125 C 0.02 o TA = 25 C 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 175 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 40 100 VGS = 0V TA = -55oC o -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) VGS = -3.5V 2.2 125 C 30 o 25 C 20 10 0 10 o TA = 125 C 1 25oC 0.1 -55oC 0.01 0.001 0.0001 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDD6685 Rev D1 FDD6685 Typical Characteristics 2400 ID = -11.0 A f = 1MHz VGS = 0 V VDS = 10V 8 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 30V 6 20V 4 1800 Ciss 1200 Coss 600 2 Crss 0 0 0 5 10 15 20 Qg, GATE CHARGE (nC) 25 30 0 Figure 7. Gate Charge Characteristics. 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 1000 100 1ms 10ms 100ms RDS(ON) LIMIT 10 100µs 1 10s DC 1 VGS = 10V SINGLE PULSE RθJA = 96oC/W 0.1 TA = 25oC 0.01 0.01 0.10 1.00 10.00 VDS, DRAIN-SOURCE VOLTAGE (V) 100.00 SINGLE PULSE RθJA = 96°C/W TA = 25°C 80 60 40 20 0 0.01 Figure 9. Maximum Safe Operating Area. 0.1 1 10 t1, TIME (sec) 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 5 D = 0.5 RqJA(t) = r(t) * RqJA RqJA = 96 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 TJ - TA = P * RqJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6685 Rev D1 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. FPS™ Power-SPM™ AccuPower™ The Power Franchise® The Right Technology for Your Success™ F-PFS™ PowerTrench® Auto-SPM™ ® FRFET® PowerXS™ AX-CAP™* Programmable Active Droop™ BitSiC® Global Power ResourceSM Build it Now™ Green FPS™ QFET® TinyBoost™ QS™ CorePLUS™ Green FPS™ e-Series™ TinyBuck™ Quiet Series™ CorePOWER™ Gmax™ TinyCalc™ RapidConfigure™ CROSSVOLT™ GTO™ TinyLogic® ™ CTL™ IntelliMAX™ TINYOPTO™ Current Transfer Logic™ ISOPLANAR™ TinyPower™ Saving our world, 1mW/W/kW at a time™ DEUXPEED® MegaBuck™ TinyPWM™ Dual Cool™ SignalWise™ MICROCOUPLER™ TinyWire™ EcoSPARK® SmartMax™ MicroFET™ TranSiC® EfficentMax™ SMART START™ MicroPak™ TriFault Detect™ ® ESBC™ SPM MicroPak2™ TRUECURRENT®* STEALTH™ MillerDrive™ ® μSerDes™ ® SuperFET MotionMax™ SuperSOT™-3 Motion-SPM™ Fairchild® SuperSOT™-6 mWSaver™ Fairchild Semiconductor® UHC® SuperSOT™-8 OptiHiT™ FACT Quiet Series™ ® Ultra FRFET™ SupreMOS® OPTOLOGIC FACT® UniFET™ OPTOPLANAR® SyncFET™ FAST® ® VCX™ Sync-Lock™ FastvCore™ VisualMax™ ®* FETBench™ XS™ FlashWriter® * PDP SPM™ tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I54