MICROCHIP TC429_13

TC429
6A Single High-Speed, CMOS Power MOSFET Driver
Features
General Description
• High Peak Output Current: 6A
• Wide Input Supply Voltage Operating Range:
- 7V to 18V
• High-Impedance CMOS Logic Input
• Logic Input Threshold Independent of Supply
Voltage
• Low Supply Current:
- With Logic ‘1’ Input – 5 mA max.
- With Logic ‘0’ Input – 0.5 mA max.
• Output Voltage Swing Within 25 mV of Ground
or VDD
• Short Delay Time: 75 nsec max
• Available in the Space-Saving 8-Pin SOIC
Package.
• High Capacitive Load Drive Capability:
- tRISE, tFALL = 35 nsec max with
CLOAD = 2500 pF
The TC429 is a high-speed, single output, CMOS-level
translator and driver. Designed specifically to drive
highly capacitive power MOSFET gates, the TC429
features a 2.5 output impedance and 6A peak output
current drive.
Applications
•
•
•
•
A 2500 pF capacitive load will be driven to 18V in
25 nsec. The rapid switching times with large
capacitive loads minimize MOSFET switching power
losses.
A TTL/CMOS input logic level is translated into an
output voltage swing that equals the supply voltage and
will swing to within 25 mV of ground or VDD. Input voltage swing may equal the supply voltage. Logic input
current is under 10 µA, making direct interface to
CMOS/bipolar switch-mode power supply controllers
easy. Input “speed-up” capacitors are not required.
The CMOS design minimizes quiescent power supply
current. With a logic ‘1’ input, power supply current is
5 mA maximum and decreases to 0.5 mA for logic ‘0’
inputs.
For dual output MOSFET drivers, see the TC426/
TC427/TC428 (DS21415), TC4426/TC4427/TC4428
(DS21422)
and
TC4426A/TC4427A/TC4428A
(DS21423) data sheets.
Switch-Mode Power Supplies
CCD Drivers
Pulse Transformer Drive
Class D Switching Amplifiers
For non-inverting applications, or applications requiring
latch-up protection, see the TC4420/TC4429
(DS21419) data sheet.
Package Types
CERDIP/PDIP/SOIC
VDD
1
8
VDD
INPUT
2
7
OUTPUT
NC
3
6
OUTPUT
5
GND
GND
4
TC429
NC = No Internal Connection
Note: Duplicate pins must both be connected for
proper operation.
 2002-2012 Microchip Technology Inc.
DS21416D-page 1
TC429
Functional Block Diagram
1,8
VDD
300 mV
6,7
Output
2
Input
Effective
Input C = 38 pF
TC429
4,5
GND
DS21416D-page 2
 2002-2012 Microchip Technology Inc.
TC429
1.0
ELECTRICAL
CHARACTERISTICS
PIN FUNCTION TABLE
Symbol
Absolute Maximum Ratings †
Description
VDD
Supply input, 7V to 18V
Control input. TTL/CMOS compatible
logic input
INPUT
Supply Voltage ..................................................... +20V
Input Voltage, Any Terminal
................................... VDD + 0.3V to GND – 0.3V
Power Dissipation (TA 70°C)
PDIP ............................................................ 730 mW
CERDIP ....................................................... 800 mW
SOIC............................................................ 470 mW
Storage Temperature Range.............. -65°C to +150°C
Maximum Junction Temperature, TJ ............... +150°C
NC
No connection
GND
Ground
GND
Ground
OUTPUT
CMOS push-pull, common to pin 7
OUTPUT
CMOS push-pull, common to pin 6
VDD
Supply input, 7V to 18V
† Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA = +25°C with 7V  VDD  18V.
Parameters
Sym
Min
Typ
Max
Units
Logic ‘1’, High Input Voltage
VIH
2.4
Logic ‘0’, Low Input Voltage
VIL
—
Conditions
1.8
—
V
1.3
0.8
V
IIN
-10
—
10
µA
High Output Voltage
VOH
VDD – 0.025
—
—
V
Low Output Voltage
VOL
—
—
0.025
V
Output Resistance
RO
—
1.8
2.5

—
1.5
2.5
IPK
—
6.0
—
A
VDD = 18V, Figure 4-4
IREV
—
0.5
—
A
Duty cycle2%, t 300 µsec,
VDD = 16V
tR
—
23
35
nsec CL = 2500 pF, Figure 4-1
Fall Time
tF
—
25
35
nsec CL = 2500 pF, Figure 4-1
Delay Time
tD1
—
53
75
nsec Figure 4-1
Delay Time
tD2
—
60
75
nsec Figure 4-1
IS
—
3.5
5.0
mA
—
0.3
0.5
Input
Input Current
0VVINVDD
Output
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
VIN = 0.8V,
VOUT = 10 mA, VDD = 18V
VIN = 2.4V,
VOUT = 10 mA, VDD = 18V
Switching Time (Note 1)
Rise Time
Power Supply
Power Supply Current
VIN = 3V
VIN = 0V
Note 1: Switching times ensured by design.
 2002-2012 Microchip Technology Inc.
DS21416D-page 3
TC429
DC ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, over operating temperature range with 7V  VDD  18V.
Parameters
Sym
Min
Typ
Max
Units
VIH
2.4
Logic ‘0’, Low Input Voltage
VIL
—
Input Current
IIN
High Output Voltage
Conditions
—
—
V
—
0.8
V
-10
—
10
µA
VOH
VDD – 0.025
—
—
V
Low Output Voltage
VOL
—
—
0.025
V
Output Resistance
RO
—
—
5.0

—
—
5.0
tR
—
—
70
Fall Time
tF
—
—
70
nsec CL = 2500 pF, Figure 4-1
Delay Time
tD1
—
—
100
nsec Figure 4-1
Delay Time
tD2
—
—
120
nsec Figure 4-1
IS
—
—
12
mA
—
—
1.0
Input
Logic ‘1’, High Input Voltage
0VVINVDD
Output
VIN = 0.8V,
VOUT = 10 mA, VDD = 18V
VIN = 2.4V,
VOUT = 10 mA, VDD = 18V
Switching Time (Note 1)
Rise Time
nsec CL = 2500 pF, Figure 4-1
Power Supply
Power Supply Current
VIN = 3V
VIN = 0V
Note 1: Switching times ensured by design.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA = +25°C with 7V  VDD  18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range (C)
TA
0
—
+70
ºC
Specified Temperature Range (E)
TA
-40
—
+85
ºC
Specified Temperature Range (M)
TA
-55
—
+125
ºC
Maximum Junction Temperature
TJ
—
—
+150
ºC
Storage Temperature Range
TA
-65
—
+150
ºC
Package Thermal Resistances
Thermal Resistance, 8L-CERDIP
JA
—
150
—
ºC/W
Thermal Resistance, 8L-PDIP
JA
—
125
—
ºC/W
Thermal Resistance, 8L-SOIC
JA
—
155
—
ºC/W
DS21416D-page 4
 2002-2012 Microchip Technology Inc.
TC429
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C with 7V  VDD  18V.
70
60
TIME (nsec)
50
SUPPLY CURRENT (mA)
TA = +25°C
CL = 2500 pF
40
30
tF
20
10
tR
5
20
Rise/Fall Times vs. Supply
200 kHz
20 kHz
100
1K
CAPACITIVE LOAD (pF)
10K
Supply Current vs.
tF
30
tR
Rise/Fall Times vs.
70
tD2
60
tD1
50
40
-50 -25 0 25 50 75 100 125 150
TEMPERATURE (°C)
FIGURE 2-2:
Temperature.
CL = 2500 pF
VDD = +15V
80
DELAY TIME (nsec)
TIME (nsec)
400 kHz
20
90
20
-50 -25 0 25 50 75 100 125 150
TEMPERATURE (°C)
FIGURE 2-5:
Temperature.
100
Delay Times vs.
140
DELAY TIME (nsec)
TA = +25°C
VDD = +15V
tF
TIME (nsec)
30
FIGURE 2-4:
Capacitive Load.
CL = 2500 pF
VDD = +15V
40
10
40
0
10
60
50
50
10
10
15
SUPPLY VOLTAGE (V)
FIGURE 2-1:
Voltage.
TA = +25°C
VDD = +15V
60
tR
10
TA = +25°C
CL = 2500 pF
120
100
80
tD2
60
tD1
1
100
FIGURE 2-3:
Capacitive Load.
1K
CAPACITIVE LOAD (pF)
10K
Rise/Fall Times vs.
 2002-2012 Microchip Technology Inc.
40
5
FIGURE 2-6:
Voltage.
10
15
SUPPLY VOLTAGE (V)
20
Delay Times vs. Supply
DS21416D-page 5
TC429
Note: Unless otherwise indicated, TA = +25°C with 7V  VDD  18V.
.
20
TA = +25°C
CL = 2500 pF
TA = +25°C
HYSTERESIS
≈310 mV
10V
40
OUTPUT VOLTAGE (V)
SUPPLY CURRENT (mA)
50
15V
30
VDD = 18V
20
10
15
300 mV
10
200 mV
5
5V
1
10
100
FREQUENCY (kHz)
FIGURE 2-7:
Frequency.
Supply Current vs.
2
FIGURE 2-8:
Voltage.
SUPPLY CURRENT (mA)
4
4
8
12
16
SUPPLY VOLTAGE (V)
Supply Current vs. Supply
VDD = +18°C
RL = ∞
INPUT LOGIC "1"
2
-75 -50 -25 0 25 50 75 100 125 150
TEMPERATURE (°C)
DS21416D-page 6
Supply Current vs.
Voltage Transfer
TA = +25°C
300
VDD = 5V
200
15V
10V
18V
100
0
20
3
FIGURE 2-9:
Temperature.
FIGURE 2-10:
Characterstics.
400
TA = +25°C
RL = ∞
INPUT LOGIC "1"
0
0.25 0.50 0.75 1 1.25 1.50 1.75 2
INPUT VOLTAGE (V)
OUTPUT VOLTAGE (mV)
SUPPLY CURRENT (mA)
4
0
1K
20
40
60
80
100
SOURCE CURRENT (mA)
FIGURE 2-11:
High Output Voltage
(VDD-VOH) vs. Output Source Current.
400
OUTPUT VOLTAGE (mV)
0
TA = +25°C
300
VDD = 5V
200
10V
15V
100
18V
0
20
40
60
80
100
SINK CURRENT (mA)
FIGURE 2-12:
Low Output Voltage vs.
Output Sink Current.
 2002-2012 Microchip Technology Inc.
TC429
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
Pin No.
3.1
PIN FUNCTION TABLE
Symbol
1
VDD
2
INPUT
Description
Supply input, 7V to 18V
Control input. TTL/CMOS compatible logic input
3
NC
4
GND
No connection
Ground
5
GND
Ground
6
OUTPUT
CMOS push-pull output, common to pin 7
7
OUTPUT
CMOS push-pull output, common to pin 6
8
VDD
Supply input, 7V to 18V
Supply Input (VDD)
The VDD input is the bias supply for the MOSFET driver
and is rated for 7.0V to 18V with respect to the ground
pin. The VDD input should be bypassed to ground with
a local ceramic capacitor. The value of the capacitor
should be chosen based on the capacitive load that is
being driven. A value of 1.0 µF is suggested.
3.2
Control Input (INPUT)
The MOSFET driver input is a high-impedance,
TTL/CMOS compatible input. The input also has
300 mV of hysteresis between the high and low thresholds that prevents output glitching even when the rise
and fall time of the input signal is very slow.
3.3
CMOS Push-Pull Output
(OUTPUT)
The MOSFET driver output is a low-impedance, CMOS
push-pull style output, capable of driving a capacitive
load with 6.0A peak currents.
3.4
Ground (GND)
The ground pins are the return path for the bias current
and for the high peak currents that discharge the load
capacitor. The ground pins should be tied into a ground
plane or have very short traces to the bias supply
source return.
3.5
No Connect (NC)
No connection.
 2002-2012 Microchip Technology Inc.
DS21416D-page 7
TC429
4.0
APPLICATIONS INFORMATION
4.1
Supply Bypassing
VDD = 18V
Charging and discharging large capacitive loads
quickly requires large currents. For example, charging
a 2500 pF load to 18V in 25 nsec requires a 1.8A
current from the device's power supply.
4.2
Grounding
The high-current capability of the TC429 demands
careful PC board layout for best performance. Since
the TC429 is an inverting driver, any ground lead
impedance will appear as negative feedback that can
degrade switching speed. The feedback is especially
noticeable with slow rise-time inputs, such as those
produced by an open-collector output with resistor pullup. The TC429 input structure includes about 300 mV
of hysteresis to ensure clean transitions and freedom
from oscillation, but attention to layout is still
recommended.
Figure 4-3 shows the feedback effect in detail. As the
TC429 input begins to go positive, the output goes
negative and several amperes of current flow in the
ground lead. A PC trace resistance of as little as 0.05
can produce hundreds of millivolts at the TC429 ground
pins. If the driving logic is referenced to power ground,
the effective logic input level is reduced and oscillations
may result.
Input
2
6, 7
4, 5
Output
CL = 2500 pF
TC429
Input: 100 kHz,
square wave,
tRISE = tFALL  10 nsec
+5V
90%
Input
0V
10%
tD1
tF
18V
tD2
tR
90%
90%
Output
10%
10%
0V
FIGURE 4-1:
Time Test Circuit.
Inverting Driver Switching
INPUT
OUTPUT
CL = 2500pF
VS = 18V
5V
100ns
TIME (100ns/DIV)
CL = 2500pF
VS = 7V
VOLTAGE (5V/DIV)
To ensure optimum device performance, separate
ground traces should be provided for the logic and
power connections. Connecting logic ground directly to
the TC429 GND pins ensures full logic drive to the input
and fast output switching. Both GND pins should be
connected to power ground.
1, 8
VOLTAGE (5V/DIV)
To ensure low supply impedance over a wide frequency
range, a parallel capacitor combination is recommended for supply bypassing. Low-inductance ceramic
disk capacitors with short lead lengths (< 0.5 in.) should
be used. A 1 µF film capacitor in parallel with one or two
0.1 µF ceramic disk capacitors normally provides
adequate bypassing.
0.1 µF
1 µF
INPUT
OUTPUT
5V
100ns
TIME (100ns/DIV)
FIGURE 4-2:
DS21416D-page 8
Switching Speed.
 2002-2012 Microchip Technology Inc.
TC429
+18V
+18V
TC429
18V
2.4V
0V
0.1 µF
1 µF
1 µF
1
2
4
8 6,7
5
0V
0.1 µF
0V
0.1 µF
2500 pF
1
8 6,7
2
4
5
TEK Current
Probe 6302
0V
0.1 µF
2500 pF
Logic
Ground
TC429
300 mV
6A
PC Trace Resistance = 0.05
Power
Ground
FIGURE 4-4:
Circuit.
4.4
FIGURE 4-3:
Switching Time Degradation
Due To Negative Feedback.
4.3
18V
2.4V
TEK Current
Probe 6302
Input Stage
The input voltage level changes the no-load or
quiescent supply current. The N-channel MOSFET
input stage transistor drives a 3 mA current source
load. With a logic ‘1’ input, the maximum quiescent
supply current is 5 mA. Logic ‘0’ input level signals
reduce quiescent current to 500 µA maximum.
The TC429 input is designed to provide 300 mV of
hysteresis, providing clean transitions and minimizing
output stage current spiking when changing states.
Input voltage levels are approximately 1.5V, making the
device TTL-compatible over the 7V to 18V operating
supply range. Input pin current draw is less than 10 µA
over this range.
The TC429 can be directly driven by TL494, SG1526/
1527, SG1524, SE5560 or similar switch-mode
power supply integrated circuits. By off-loading the
power-driving duties to the TC429, the power supply
controller can operate at lower dissipation, improving
performance and reliability.
Peak Output Current Test
Power Dissipation
CMOS circuits usually permit the user to ignore power
dissipation. Logic families such as the 4000 and 74C
have outputs that can only supply a few milliamperes of
current, and even shorting outputs to ground will not
force enough current to destroy the device. The TC429,
however, can source or sink several amperes and drive
large capacitive loads at high frequency. Since the
package power dissipation limit can easily be
exceeded, some attention should be given to power
dissipation when driving low-impedance loads and/or
operating at high frequency.
The supply current versus frequency and supply
current versus capacitive load characteristic curves will
aid in determining power dissipation calculations.
Table 4-1 lists the maximum operating frequency for
several power supply voltages when driving a 2500 pF
load. More accurate power dissipation figures can be
obtained by summing the three components that make
up the total device power dissipation.
Input signal duty cycle, power supply voltage and
capacitive load influence package power dissipation.
Given power dissipation and package thermal resistance, the maximum ambient operation temperature
is easily calculated. The 8-pin CERDIP junction-toambient thermal resistance is 150C/W. At +25C, the
package is rated at 800 mW maximum dissipation.
Maximum allowable junction temperature is +150C.
Three components make up total package power
dissipation:
• Capacitive load dissipation (PC)
• Quiescent power (PQ)
• Transition power (PT)
The capacitive load-caused dissipation is a direct
function of frequency, capacitive load and supply
voltage.
 2002-2012 Microchip Technology Inc.
DS21416D-page 9
TC429
The device capacitive load dissipation is:
Note:
Ambient operating temperature should not
exceed +85ºC for EPA or EOA devices or
+125ºC for MJA devices.
EQUATION
2
P C = fCV S
TABLE 4-1:
Where:
f = Switching frequency
C = Capacitive load
VS = Supply voltage
Quiescent power dissipation depends on input signal
duty cycle. A logic low input results in a low-power
dissipation mode with only 0.5 mA total current drain.
Logic-high signals raise the current to 5 mA maximum.
The quiescent power dissipation is:
EQUATION
PQ = VS  D  I H  +  1 – D I L 
VS
fMAX
18V
500 kHz
15V
700 kHz
10V
1.3 MHz
5V
>2 MHz
Conditions:
1. CERDIP Package (JA =150C/W)
2. TA = +25C
3. CL = 2500 pF
Where:
IH = Quiescent current with input high
(5 mA max)
IL = Quiescent current with input low
(0.5 mA max)
D = Duty cycle
5V/DIV
OUTPUT
VS = 18V
RL = 0.1Ω
The device transition power dissipation is approximately:
5V
500mV
EQUATION
= 2500 pF
VS
= 15V
D
= 50%
f
PD
5μs
TIME (5μs/DIV)
–9
A  Sec 
An example shows the relative magnitude for each
item.
C
INPUT
500mV/DIV
(5 AMP/DIV)
Transition power dissipation arises because the output
stage N- and P-channel MOS transistors are ON
simultaneously for a very short period when the output
changes.
PT = fV S  3.3  10
MAXIMUM OPERATING
FREQUENCIES
= 200 kHz
= Package power dissipation:
= PC + PT + PQ
= 113 mW + 10 mW + 41 mW
= 164 mW
Maximum ambient operating temperature:
= TJ – JA (PD)
= 150ºC - (150ºC/W)(0.164W)
= 125C
FIGURE 4-5:
Capability.
4.5
Note:
Peak Output Current
POWER-ON OSCILLATION
It is extremely important that all MOSFET
driver applications be evaluated for the
possibility of having high-power oscillations
occur during the power-on cycle.
Power-on oscillations are due to trace size, layout and
component placement. A ‘quick fix’ for most applications that exhibit power-on oscillation problems is to
place approximately 10 k in series with the input of
the MOSFET driver.
Where:
TJ
= Maximum allowable junction temperature
(+150C)
JA
= Junction-to-ambient thermal resistance
(150C/W, CERDIP)
DS21416D-page 10
 2002-2012 Microchip Technology Inc.
TC429
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
8-Lead PDIP (300 mil)
XXXXXXXX
NNN
YYWW
8-Lead CERDIP (300 mil)
XXXXXXXX
NNN
YYWW
8-Lead SOIC (150 mil)
XXXXXXXX
XXXXYYWW
NNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Example:
TC429CPA
057
0350
Example:
TC429MJA
057
0350
Example:
TC429
EOA0350
057
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
 2002-2012 Microchip Technology Inc.
DS21416D-page 11
TC429
8-Lead Plastic Dual In-line (PA) – 300 mil (PDIP)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E1
D
2
n
1

E
A2
A
L
c
A1

B1
p
eB
B
Units
Dimension Limits
n
p
Number of Pins
Pitch
Top to Seating Plane
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
Tip to Seating Plane
Lead Thickness
Upper Lead Width
Lower Lead Width
Overall Row Spacing
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
§
A
A2
A1
E
E1
D
L
c
B1
B
eB
a
b
MIN
.140
.115
.015
.300
.240
.360
.125
.008
.045
.014
.310
5
5
INCHES*
NOM
MAX
8
.100
.155
.130
.170
.145
.313
.250
.373
.130
.012
.058
.018
.370
10
10
.325
.260
.385
.135
.015
.070
.022
.430
15
15
MILLIMETERS
NOM
8
2.54
3.56
3.94
2.92
3.30
0.38
7.62
7.94
6.10
6.35
9.14
9.46
3.18
3.30
0.20
0.29
1.14
1.46
0.36
0.46
7.87
9.40
5
10
5
10
MIN
MAX
4.32
3.68
8.26
6.60
9.78
3.43
0.38
1.78
0.56
10.92
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
DS21416D-page 12
 2002-2012 Microchip Technology Inc.
TC429
8-Lead Ceramic Dual In-line – 300 mil (CERDIP)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E1
2
1
n
D
E
A2
A
c
L
B1
eB
B
A1
Units
Dimension Limits
n
p
Number of Pins
Pitch
Top to Seating Plane
Standoff §
Shoulder to Shoulder Width
Ceramic Pkg. Width
Overall Length
Tip to Seating Plane
Lead Thickness
Upper Lead Width
Lower Lead Width
Overall Row Spacing
*Controlling Parameter
JEDEC Equivalent: MS-030
A
A1
E
E1
D
L
c
B1
B
eB
p
MIN
.160
.020
.290
.230
.370
.125
.008
.045
.016
.320
INCHES*
NOM
8
.100
.180
.030
.305
.265
.385
.163
.012
.055
.018
.360
MAX
.200
.040
.320
.300
.400
.200
.015
.065
.020
.400
MILLIMETERS
NOM
8
2.54
4.06
4.57
0.51
0.77
7.37
7.75
5.84
6.73
9.40
9.78
3.18
4.13
0.20
0.29
1.14
1.40
0.41
0.46
8.13
9.15
MIN
MAX
5.08
1.02
8.13
7.62
10.16
5.08
0.38
1.65
0.51
10.16
Drawing No. C04-010
 2002-2012 Microchip Technology Inc.
DS21416D-page 13
TC429
8-Lead Plastic Small Outline (OA) – Narrow, 150 mil (SOIC)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E
E1
p
D
2
B
n
1

h
45
c
A2
A


L
Units
Dimension Limits
n
p
Number of Pins
Pitch
Overall Height
Molded Package Thickness
Standoff §
Overall Width
Molded Package Width
Overall Length
Chamfer Distance
Foot Length
Foot Angle
Lead Thickness
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
A
A2
A1
E
E1
D
h
L

c
B


MIN
.053
.052
.004
.228
.146
.189
.010
.019
0
.008
.013
0
0
A1
INCHES*
NOM
8
.050
.061
.056
.007
.237
.154
.193
.015
.025
4
.009
.017
12
12
MAX
.069
.061
.010
.244
.157
.197
.020
.030
8
.010
.020
15
15
MILLIMETERS
NOM
8
1.27
1.35
1.55
1.32
1.42
0.10
0.18
5.79
6.02
3.71
3.91
4.80
4.90
0.25
0.38
0.48
0.62
0
4
0.20
0.23
0.33
0.42
0
12
0
12
MIN
MAX
1.75
1.55
0.25
6.20
3.99
5.00
0.51
0.76
8
0.25
0.51
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
DS21416D-page 14
 2002-2012 Microchip Technology Inc.
TC429
6.0
REVISION HISTORY
Revision D (December 2012)
Added a note to each package outline drawing.
 2002-2012 Microchip Technology Inc.
DS21416D-page 15
TC429
NOTES:
DS21416D-page 16
 2002-2012 Microchip Technology Inc.
TC429
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
Device:
X
Temperature
Range
TC429:
Temperature Range: C
E
M
Package:
/XX
=
=
=
Package
Examples:
a)
TC429CPA: 6A Single MOSFET driver,
PDIP package, 0°C to +70°C.
b)
TC429MJA: 6A Single MOSFET driver,
CERDIP package, -55°C to +125°C.
6A Single MOSFET Driver
c)
TC429EPA: 6A Single MOSFET driver,
PDIP package, -40°C to +85°C.
0°C to +70°C
-40°C to +85°C
-55°C to +125°C (CERDIP only)
d)
TC429EOA713: Tape and Reel,
6A Single MOSFET driver, SOIC package, 40°C to +85°C.
JA
= Plastic CERDIP, (300 mil Body), 8-lead
OA
= Plastic SOIC, (150 mil Body), 8-lead *
OA713 = Plastic SOIC, (150 mil Body), 8-lead *
(Tape and Reel)
PA
= Plastic DIP (300 mil Body), 8-lead
* SOIC package offered in E-Temp only
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
Your local Microchip sales office
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2002-2012 Microchip Technology Inc.
DS21416D-page 17
TC429
NOTES:
DS21416D-page 18
 2002-2012 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2002-2012, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620767917
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
 2002-2012 Microchip Technology Inc.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS21416D-page 19
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Japan - Osaka
Tel: 81-66-152-7160
Fax: 81-66-152-9310
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
China - Hangzhou
Tel: 86-571-2819-3187
Fax: 86-571-2819-3189
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-213-7828
Fax: 886-7-330-9305
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
DS21416D-page 20
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
11/27/12
 2002-2012 Microchip Technology Inc.