TC4426M/TC4427M/TC4428M 1.5A Dual High-Speed Power MOSFET Drivers Features General Description • High Peak Output Current – 1.5A • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Capacitive Load Drive Capability – 1000 pF in 25 ns (typ.) • Short Delay Times – 40 ns (typ.) • Matched Rise and Fall Times • Low Supply Current: - With Logic ‘1’ Input – 4 mA - With Logic ‘0’ Input – 400 µA • Low Output Impedance – 7 • Latch-Up Protected: Will Withstand 0.5A Reverse Current • Input: Will Withstand Negative Inputs Up to 5V • ESD Protected – 4 kV • Pin-Compatible with the TC426M/TC427M/ TC428M, TC4426AM/TC4427AM/TC4428AM Devices • Wide Operating Temperature Range: - -55°C to +125°C • See TC4426/TC4427/TC4428 data sheet (DS21422) for additional temperature range and packaging offerings The TC4426M/TC4427M/TC4428M are improved versions of the earlier TC426M/TC427M/TC428M family of MOSFET drivers. The TC4426M/TC4427M/ TC4428M devices have matched rise and fall times when charging and discharging the gate of a MOSFET. These devices are highly latch-up resistant under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against Electrostatic Discharge (ESD) up to 4 kV. The TC4426M/TC4427M/TC4428M MOSFET drivers can easily charge/discharge 1000 pF gate capacitances in under 30 ns and provide low enough impedances in both the on and off states to ensure the MOSFET's intended state will not be affected, even by large transients. The TC4426AM/TC4427AM/TC4428AM family of devices are also compatible drivers. The TC4426AM/ TC4427AM/TC4428AM devices have matched leading and falling edge input-to-output delay times, in addition to the matched rise and fall times of the TC4426M/TC4427M/TC4428M devices. Applications Package Types 8-Pin CERDIP TC4426M TC4427M TC4428M NC 1 IN A 2 GND 3 IN B 4 2005-2013 Microchip Technology Inc. TC4426M TC4427M TC4428M • Switch-mode Power Supplies • Line Drivers • Pulse Transformer Drive 8 NC NC NC 7 OUT A OUT A OUT A 6 VDD VDD VDD 5 OUT B OUT B OUT B DS21938B-page 1 TC4426M/TC4427M/TC4428M Functional Block Diagram VDD Inverting 300 mV Output Non-Inverting Input Effective Input C = 12 pF (Each Input) 4.7V TC4426M/TC4427M/TC4428M(1) (2) GND Note 1: The TC4426M has two inverting drivers; the TC4427M has two non-inverting drivers; the TC4428M has one inverting and one non-inverting driver. 2: Ground any unused driver input. DS21938B-page 2 2005-2013 Microchip Technology Inc. TC4426M/TC4427M/TC4428M 1.0 ELECTRICAL CHARACTERISTICS † Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings † Supply Voltage ................................................................+22V Input Voltage, IN A or IN B .......... (VDD + 0.3V) to (GND – 5V) Storage Temperature Range .........................-65°C to +150°C Maximum Junction Temperature ................................. +150°C DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, TA = +25ºC with 4.5V VDD 18V. Parameters Sym Min Typ Max Units Conditions Logic ‘1’, High Input Voltage VIH 2.4 — — V Logic ‘0’, Low Input Voltage VIL — — 0.8 V Input Current IIN -1.0 — +1.0 µA 0VVINVDD High Output Voltage VOH VDD – 0.025 — — V DC TEST Low Output Voltage VOL — — 0.025 V DC TEST Output Resistance RO — 7 10 IOUT = 10 mA, VDD = 18V Peak Output Current IPK — 1.5 — A VDD = 18V Latch-Up Protection Withstand Reverse Current IREV — >0.5 — A Duty cycle2%, t 300 µs VDD = 18V tR — 19 30 ns Figure 4-1 Fall Time tF — 25 30 ns Figure 4-1 Delay Time tD1 — 20 30 ns Figure 4-1 Delay Time tD2 — 40 50 ns Figure 4-1 IS — — — — 4.5 0.4 mA VIN = 3V (Both inputs) VIN = 0V (Both inputs) Input Output Switching Time (Note 1) Rise Time Power Supply Power Supply Current Note 1: Switching times ensured by design. 2005-2013 Microchip Technology Inc. DS21938B-page 3 TC4426M/TC4427M/TC4428M DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V VDD 18V. Parameters Sym Min Typ Max Units Logic ‘1’, High Input Voltage VIH 2.4 Logic ‘0’, Low Input Voltage VIL — Input Current IIN High Output Voltage Conditions — — V — 0.8 V -10 — +10 µA 0VVINVDD VOH VDD – 0.025 — — V DC Test Low Output Voltage VOL — — 0.025 V DC Test Output Resistance RO — 9 12 IOUT = 10 mA, VDD = 18V Peak Output Current IPK — 1.5 — A VDD = 18V Latch-Up Protection Withstand Reverse Current IREV — >0.5 — A Duty cycle2%, t 300 µs VDD = 18V Input Output Switching Time (Note 1) Rise Time tR — — 40 ns Figure 4-1 Fall Time tF — — 40 ns Figure 4-1 Delay Time tD1 — — 40 ns Figure 4-1 Delay Time tD2 — — 60 ns Figure 4-1 IS — — — — 8.0 0.6 mA VIN = 3V (Both inputs) VIN = 0V (Both inputs) Power Supply Power Supply Current Note 1: Switching times ensured by design. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V. Parameters Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range (M) TA -55 — +125 ºC Maximum Junction Temperature TJ — — +150 ºC Storage Temperature Range TA -65 — +150 ºC JA — 150 — ºC/W Package Thermal Resistances Thermal Resistance, 8L-CERDIP DS21938B-page 4 2005-2013 Microchip Technology Inc. TC4426M/TC4427M/TC4428M 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, TA = +25ºC with 4.5V VDD 18V. 100 100 2200 pF 2200 pF 80 1500 pF 1500 pF tFALL (nsec) tRISE (nsec) 80 60 1000 pF 40 60 1000 pF 40 470 pF 470 pF 20 20 100 pF 100 pF 0 0 4 6 FIGURE 2-1: Voltage. 8 10 14 12 VDD (V) 16 18 Rise Time vs. Supply 100 4 8 FIGURE 2-4: Voltage. 10 12 VDD (V) 14 16 18 Fall Time vs. Supply 100 5V 5V 80 80 tFALL (nsec) tRISE (nsec) 6 10V 60 15V 40 20 60 10V 15V 40 20 0 100 1000 CLOAD (pF) FIGURE 2-2: Load. 0 100 10,000 Rise Time vs. Capacitive 1000 CLOAD (pF) FIGURE 2-5: Load. 10,000 Fall Time vs. Capacitive 60 TIME (nsec) 50 Propagation Delay (nsec) C LOAD = 1000 pF VDD = 17.5V 40 30 tFALL 20 10 –55 –35 –15 FIGURE 2-3: Temperature. tRISE 80 75 70 65 60 55 50 45 40 35 30 25 20 CLOAD = 1000 pF VIN = 5V tD2 tD1 4 5 25 45 65 85 TEMPERATURE (˚C) Rise and Fall Times vs. 2005-2013 Microchip Technology Inc. 6 105 125 8 10 12 14 16 18 VDD (V) FIGURE 2-6: Supply Voltage. Propagation Delay Time vs. DS21938B-page 5 TC4426M/TC4427M/TC4428M Note: Unless otherwise indicated, TA = +25ºC with 4.5V VDD 18V. 45 CLOAD = 1000 pF 55 VDD = 12V 50 45 tD2 40 35 30 tD1 25 CLOAD = 1000 pF VIN = 5V VDD = 18V tD2 40 Delay Time (nsec) Propagation Delay (nsec) 60 20 35 30 25 20 tD1 15 15 10 10 0 1 2 3 4 5 6 7 8 9 10 11 12 -55 -35 -15 Input Amplitude (V) FIGURE 2-7: Input Amplitude. 5 25 45 65 85 105 125 Temperature (ºC) Propagation Delay Time vs. FIGURE 2-10: Temperature. Propagation Delay Time vs. 4.0 IQUIESCENT (mA) IQUIESCENT (mA) V DD = 18V BOTH INPUTS = 1 1 3.5 3.0 BOTH INPUTS = 1 2.5 BOTH INPUTS = 0 0.1 4 6 8 FIGURE 2-8: Voltage. 10 12 VDD 14 16 2.0 –55 –35 –15 18 Supply Current vs. Supply FIGURE 2-11: Temperature. 25 45 TA ( C) 65 85 105 125 Supply Current vs. 25 25 20 20 WORST CASE @ TJ = +150 C RDS(ON) (Ω) RDS(ON) (Ω) 5 15 TYP @ TA = +25 C 10 WORST CASE @ TJ = +150 C 15 TYP @ TA = +25 C 10 8 8 5 5 4 6 8 10 12 14 16 18 4 6 VDD FIGURE 2-9: Supply Voltage. DS21938B-page 6 Output Resistance (ROH) vs. FIGURE 2-12: Supply Voltage. 8 10 12 VDD 14 16 18 Output Resistance (ROL) vs. 2005-2013 Microchip Technology Inc. TC4426M/TC4427M/TC4428M Note: Unless otherwise indicated, TA = +25ºC with 4.5V VDD 18V. 60 VDD = 18V 60 2 MHz VDD = 18V 50 1000 pF 2200 pF 50 ISUPPLY (mA) ISUPPLY (mA) 900 kHz 40 600 kHz 30 20 200 kHz 10 40 100 pF 30 20 10 20 kHz 0 100 1000 CLOAD (pF) FIGURE 2-13: Capacitive Load. 0 10,000 Supply Current vs. 10 FIGURE 2-16: Frequency. 60 VDD = 12V 50 50 40 40 ISUPPLY (mA) ISUPPLY (mA) Supply Current vs. 60 2 MHz VDD = 12V 30 900 kHz 20 600 kHz 10 1000 CLOAD (pF) FIGURE 2-14: Capacitive Load. 2200 pF 1000 pF 30 20 100 pF 10 200 kHz 20 kHz 0 100 0 10 10,000 Supply Current vs. 100 1000 FREQUENCY (kHz) FIGURE 2-17: Frequency. 60 Supply Current vs. 60 VDD = 6V VDD = 6V 50 50 40 30 ISUPPLY (mA) ISUPPLY (mA) 100 1000 FREQUENCY (kHz) 2 MHz 20 900 kHz 600 kHz 200 kHz 20 kHz 10 0 100 FIGURE 2-15: Capacitive Load. 1000 CLOAD (pF) 2200 pF 30 1000 pF 20 10 10,000 Supply Current vs. 2005-2013 Microchip Technology Inc. 40 100 pF 0 10 FIGURE 2-18: Frequency. 100 1000 FREQUENCY (kHz) Supply Current vs. DS21938B-page 7 TC4426M/TC4427M/TC4428M Note: Unless otherwise indicated, TA = +25ºC with 4.5V VDD 18V. –8 10 9 8 7 6 A • sec 5 4 3 2 –9 10 Note: 4 6 8 10 12 VDD 14 16 18 The values seen in this graph represent the loss seen by both drivers in a package during one complete cycle. For a single driver, divide the stated values by 2. For a single transition of a single driver, divide the stated value by 4. FIGURE 2-19: Supply Voltage. DS21938B-page 8 Crossover Energy vs. 2005-2013 Microchip Technology Inc. TC4426M/TC4427M/TC4428M 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE 8-Pin CERDIP Symbol 1 NC No connection 2 IN A Input A 3 GND Ground 4 IN B Input B 5 OUT B 6 VDD 7 OUT A 8 NC 3.1 3.3 Output A & B (OUT A and OUT B) MOSFET drivers OUT A & B are low-impedance, CMOS push-pull style outputs. The pull-down and pullup devices are of equal strength, making the rise and fall times equivalent. Description 3.4 Output B Supply input Supply Input (VDD) The VDD input is the bias supply for the MOSFET driver and is rated for 4.5V to 18V with respect to the ground pin. The VDD input should be bypassed with local ceramic capacitors. The value of these capacitors should be chosen based on the capacitive load that is being driven. A value of 1.0 µF is suggested. Output A No connection Inputs A & B (IN A and IN B) MOSFET drivers IN A & B are high-impedance, TTL/ CMOS-compatible inputs. These inputs also have 300 mV of hysteresis between the high and low thresholds that prevents output glitching even when the rise and fall time of the input signal is very slow. 3.2 Ground (GND) GND is the device return pin. The ground pin(s) should have a low-impedance connection to the bias supply source return. High peak currents will flow out of the ground pin(s) when the capacitive load is being discharged. 2005-2013 Microchip Technology Inc. DS21938B-page 9 TC4426M/TC4427M/TC4428M 4.0 APPLICATIONS INFORMATION +5V 90% Input VDD = 18V 0V 4.7 µF 0.1 µF Input tD1 7 VDD tR 90% 90% Output 5 10% 10% 0V Inverting Driver CL = 1000 pF 4 tD2 tF Output 6 2 10% +5V 90% Input 3 Input: 100 kHz, square wave, tRISE = tFALL 10 ns 0V VDD 10% tD1 90% tR Output 0V 10% 90% tD2 tF 10% Non-Inverting Driver FIGURE 4-1: DS21938B-page 10 Switching Time Test Circuit. 2005-2013 Microchip Technology Inc. TC4426M/TC4427M/TC4428M 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 8-Lead CERDIP (300 mil) XXXXXXXX XXXXXNNN YYWW Legend: XX...X Y YY WW NNN e3 * Note: Example: TC4427 3 MJA e^^256 0543 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2005-2013 Microchip Technology Inc. DS21938B-page 11 TC4426M/TC4427M/TC4428M 8-Lead Ceramic Dual In-line – 300 mil (CERDIP) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E1 2 1 n D E A2 A c L B1 eB B A1 Units Dimension Limits n p Number of Pins Pitch Top to Seating Plane Standoff § Shoulder to Shoulder Width Ceramic Pkg. Width Overall Length Tip to Seating Plane Lead Thickness Upper Lead Width Lower Lead Width Overall Row Spacing *Controlling Parameter JEDEC Equivalent: MS-030 A A1 E E1 D L c B1 B eB p MIN .160 .020 .290 .230 .370 .125 .008 .045 .016 .320 INCHES* NOM 8 .100 .180 .030 .305 .265 .385 .163 .012 .055 .018 .360 MAX .200 .040 .320 .300 .400 .200 .015 .065 .020 .400 MILLIMETERS NOM 8 2.54 4.06 4.57 0.51 0.77 7.37 7.75 5.84 6.73 9.40 9.78 3.18 4.13 0.20 0.29 1.14 1.40 0.41 0.46 8.13 9.15 MIN MAX 5.08 1.02 8.13 7.62 10.16 5.08 0.38 1.65 0.51 10.16 Drawing No. C04-010 DS21938B-page 12 2005-2013 Microchip Technology Inc. TC4426M/TC4427M/TC4428M APPENDIX A: REVISION HISTORY Revision B (January 2013) Added a note to each package outline drawing. Revision A (February 2005) • Original Release of this Document. 2005-2013 Microchip Technology Inc. DS21938B-page 13 TC4426M/TC4427M/TC4428M NOTES: DS21938B-page 14 2005-2013 Microchip Technology Inc. TC4426M/TC4427M/TC4428M PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. XX Device and Temperature Range Package Device and Temperature Range: TC4426M: TC4427M: TC4428M: Package: 1.5A Dual MOSFET Driver, Inverting, -55°C to +125°C 1.5A Dual MOSFET Driver, Non-Inverting, -55°C to +125°C 1.5A Dual MOSFET Driver, Complementary, -55°C to +125°C JA = Ceramic Dual In-line (300 mil Body), 8-lead 2005-2013 Microchip Technology Inc. Examples: a) TC4426MJA: 1.5A Dual MOSFET driver, Inverting, -55°C to +125°C, 8LD CERDIP package. a) TC4427MJA: 1.5A Dual MOSFET driver, Non-Inverting, -55°C to +125°C, 8LD CERDIP package. a) TC4428MJA: 1.5A Dual MOSFET driver, Complementary, -55°C to +125°C, 8LD CERDIP package. DS21938B-page 15 TC4426M/TC4427M/TC4428M NOTES: DS21938B-page 16 2005-2013 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MTP, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. & KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2005-2013, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 9781620769195 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2005-2013 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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