FREESCALE MMG3H21NT1

Freescale Semiconductor
Technical Data
Document Number: MMG3H21NT1
Rev. 0, 4/2008
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
MMG3H21NT1
Broadband High Linearity Amplifier
The MMG3H21NT1 is a General Purpose Amplifier that is internally
input matched and internally output matched. It is designed for a broad
range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz
such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and
general small - signal RF.
0 - 6000 MHz, 19.3 dB
20.5 dBm
InGaP HBT
Features
• Frequency: 0 - 6000 MHz
• P1dB: 20.5 dBm @ 900 MHz
• Small - Signal Gain: 19.3 dB @ 900 MHz
• Third Order Output Intercept Point: 37 dBm @ 900 MHz
• Single 5 Volt Supply
• Active Bias
• Internally Matched to 50 Ohms
• Low Cost SOT - 89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.
Table 1. Typical Performance (1)
Characteristic
Symbol
2140
MHz
3500
MHz
Unit
Small - Signal Gain
(S21)
Gp
19.3
16
14
dB
Input Return Loss
(S11)
IRL
- 18
- 25
- 20
dB
Output Return Loss
(S22)
ORL
Power Output @1dB
Compression
P1db
20.5
19.8
17.7
dBm
IP3
37
34
31
dBm
Third Order Output
Intercept Point
3
CASE 1514 - 02, STYLE 1
SOT - 89
PLASTIC
Table 2. Maximum Ratings
900
MHz
- 10
12
-6
-8
dB
Symbol
Value
Unit
Supply Voltage
Rating
VCC
7
V
Supply Current
ICC
300
mA
RF Input Power
Pin
12
dBm
Tstg
- 65 to +150
°C
TJ
150
°C
Storage Temperature Range
Junction Temperature
(2)
2. For reliable operation, the junction temperature should not
exceed 150°C.
1. VCC = 5 Vdc, TC = 25°C, 50 ohm system
Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 90 mA, TC = 25°C)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value (3)
Unit
RθJC
38.6
°C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG3H21NT1
1
Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit)
Symbol
Min
Typ
Max
Unit
Small - Signal Gain (S21)
Characteristic
Gp
18.3
19.3
—
dB
Input Return Loss (S11)
IRL
—
- 18
—
dB
Output Return Loss (S22)
ORL
—
- 10
—
dB
Power Output @ 1dB Compression
P1dB
—
20.5
—
dBm
Third Order Output Intercept Point
IP3
—
37
—
dBm
Noise Figure
NF
—
5.5
—
dB
Supply Current (1)
ICC
75
90
110
mA
Supply Voltage (1)
VCC
—
5
—
V
1. For reliable operation, the junction temperature should not exceed 150°C.
MMG3H21NT1
2
RF Device Data
Freescale Semiconductor
Table 5. Functional Pin Description
Pin
Number
2
Pin Function
1
RFin
2
Ground
3
RFout/DC Supply
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Conditions/Test Methodology
Class
Human Body Model (per JESD 22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD 22 - A115)
A (Minimum)
Charge Device Model (per JESD 22 - C101)
IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
1
260
°C
MMG3H21NT1
RF Device Data
Freescale Semiconductor
3
50 OHM TYPICAL CHARACTERISTICS
0
S22
20
−10
S11, S22 (dB)
Gp, SMALL−SIGNAL GAIN (dB)
25
TC = −40°C
15
25°C
10
85°C
−20
S11
−30
VCC = 5 Vdc
ICC = 90 mA
VCC = 5 Vdc
5
−40
0
1
2
3
3
4
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 3. Input/Output Return Loss versus
Frequency
P1dB, 1 dB COMPRESSION POINT (dBm)
21
VCC = 5 Vdc
ICC = 90 mA
21
Gp, SMALL−SIGNAL GAIN (dB)
2
Figure 2. Small - Signal Gain (S21) versus
Frequency
23
900 MHz
19
1960 MHz
17
15
3500 MHz
13
2600 MHz
2140 MHz
11
9
20
19
18
VCC = 5 Vdc
ICC = 90 mA
17
10
12
14
18
16
20
1
1.5
2
2.5
3
Pout, OUTPUT POWER (dBm)
f, FREQUENCY (GHz)
Figure 4. Small - Signal Gain versus Output
Power
Figure 5. P1dB versus Frequency
160
140
120
100
80
60
40
20
0
0
0.5
22
1
2
3
4
5
6
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
8
ICC, COLLECTOR CURRENT (mA)
1
0
4
3.5
38
37
36
35
34
33
32
VCC = 5 Vdc
ICC = 90 mA
1 MHz Tone Spacing
31
30
0
1
2
3
VCC, COLLECTOR VOLTAGE (V)
f, FREQUENCY (GHz)
Figure 6. Collector Current versus Collector
Voltage
Figure 7. Third Order Output Intercept Point
versus Frequency
4
MMG3H21NT1
4
RF Device Data
Freescale Semiconductor
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
50 OHM TYPICAL CHARACTERISTICS
38
37
36
35
34
f = 900 MHz
1 MHz Tone Spacing
33
32
4.5
4.7
4.9
5.1
5.3
5.5
VCC, COLLECTOR VOLTAGE (V)
39
38
37
36
VCC = 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
35
−40
−20
40
60
80
100
Figure 9. Third Order Output Intercept Point
versus Case Temperature
105
−30
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
20
T, TEMPERATURE (_C)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
MTTF (YEARS)
−40
−50
−60
−70
103
9
7
11
13
15
17
120
19
125
130
135
140
145
Pout, OUTPUT POWER (dBm)
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Third Order Intermodulation versus
Output Power
NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 90 mA
10
8
6
4
2
VCC = 5 Vdc
ICC = 90 mA
0
1
2
3
4
150
Figure 11. MTTF versus Junction Temperature
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
5
0
104
VCC = 5 Vdc
ICC = 90 mA
f = 900 MHz
1 MHz Tone Spacing
−80
NF, NOISE FIGURE (dB)
0
−20
VCC = 5 Vdc, ICC = 90 mA, f = 2140 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
−30
−40
−50
−60
−70
8
10
12
14
16
18
f, FREQUENCY (GHz)
Pout, OUTPUT POWER (dBm)
Figure 12. Noise Figure versus Frequency
Figure 13. Single - Carrier W - CDMA Adjacent
Channel Power Ratio versus Output Power
20
MMG3H21NT1
RF Device Data
Freescale Semiconductor
5
50 OHM APPLICATION CIRCUIT: 30 - 300 MHz
VSUPPLY
R1
C3
C4
L1
RF
INPUT
DUT
Z1
Z2
Z3
Z5
C2
VCC
C1
Z1, Z5
Z2
Z3
Z4
RF
OUTPUT
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, εr = 4.1
Figure 14. 50 Ohm Test Circuit Schematic
30
S21
S21, S11, S22 (dB)
20
R1
VCC = 5 Vdc
ICC = 90 mA
10
C4
C3
C1
0
L1
C2
−10
S22
−20
S11
MMG30XX
Rev 2
−30
100
0
200
300
400
500
f, FREQUENCY (MHz)
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3
0.1 μF Chip Capacitors
C0603C104J5RAC
Kemet
C4
1 μF Chip Capacitor
C0603C105J5RAC
Kemet
L1
470 nH Chip Inductor
BK2125HM471 - T
Taiyo Yuden
R1
0 Ω Chip Resistor
ERJ3GEY0R00V
Panasonic
MMG3H21NT1
6
RF Device Data
Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 300 - 3600 MHz
VSUPPLY
R1
C3
C4
L1
RF
INPUT
DUT
Z1
Z2
Z3
Z5
C2
VCC
C1
Z1, Z5
Z2
Z3
Z4
RF
OUTPUT
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, εr = 4.1
Figure 17. 50 Ohm Test Circuit Schematic
30
S21
20
R1
S21, S11, S22 (dB)
10
0
C4
C3
C1
S22
C2
L1
−10
−20
S11
VCC = 5 Vdc
ICC = 90 mA
−30
−40
300
800
MMG30XX
Rev 2
1300
1800
2300
2800
3300
3800
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
150 pF Chip Capacitors
C0603C104J5RAC
Kemet
C3
0.1 μF Chip Capacitor
C0603C105J5RAC
Kemet
C4
1 μF Chip Capacitor
C0603C105J5RAC
Kemet
L1
56 nH Chip Inductor
HK160856NJ - T
Taiyo Yuden
R1
0 Ω Chip Resistor
ERJ3GEY0R00V
Panasonic
MMG3H21NT1
RF Device Data
Freescale Semiconductor
7
1.7
7.62
0.305 diameter
2.49
3.48
5.33
2.54
1.27
1.27
0.58
0.86
0.64
3.86
Recommended Solder Stencil
NOTES:
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE
USED IN PCB LAYOUT DESIGN.
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS
POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN.
3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN
AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO
THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL
AND RF PERFORMANCE.
4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM
PITCH.
Figure 20. Recommended Mounting Configuration
MMG3H21NT1
8
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Source S - Parameters (VCC = 5 Vdc, ICC = 90 mA, TC = 25°C, 50 Ohm System)
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
100
0.093
176.9
10.209
175.9
0.0561
0.4
0.214
- 7.4
150
0.090
165.2
10.269
171.9
0.0565
- 1.4
0.234
- 17.0
200
0.087
162.0
10.228
169.1
0.0565
- 2.0
0.241
- 23.4
250
0.085
157.6
10.184
166.4
0.0563
- 2.5
0.246
- 29.9
300
0.084
155.6
10.141
163.7
0.0563
- 3.0
0.249
- 35.4
350
0.082
150.2
10.080
161.1
0.0561
- 3.4
0.260
- 40.9
400
0.081
147.6
10.025
158.4
0.0561
- 3.8
0.265
- 46.5
450
0.080
143.7
9.955
155.8
0.0559
- 4.3
0.272
- 50.9
500
0.078
139.6
9.884
153.3
0.0559
- 4.5
0.281
- 55.7
550
0.078
136.5
9.815
150.7
0.0557
- 5.1
0.289
- 60.7
600
0.076
131.9
9.729
148.2
0.0555
- 5.3
0.297
- 64.6
650
0.075
127.5
9.645
145.6
0.0553
- 5.9
0.306
- 69.2
700
0.074
124.7
9.556
143.1
0.0552
- 6.2
0.315
- 73.0
750
0.074
121.7
9.465
140.7
0.0550
- 6.5
0.323
- 77.0
800
0.071
118.2
9.365
138.2
0.0548
- 6.8
0.329
- 80.8
850
0.071
116.4
9.267
135.9
0.0548
- 7.0
0.337
- 84.5
900
0.068
113.1
9.168
133.5
0.0545
- 7.3
0.348
- 87.9
950
0.067
111.2
9.059
131.1
0.0543
- 7.6
0.353
- 91.3
1000
0.064
109.8
8.966
128.8
0.0543
- 7.8
0.361
- 94.5
1050
0.055
113.6
8.884
126.5
0.0542
- 8.2
0.360
- 98.5
1100
0.050
107.1
8.779
124.3
0.0543
- 8.3
0.370
- 101.2
1150
0.046
101.8
8.676
122.1
0.0543
- 8.5
0.378
- 103.2
1200
0.043
95.4
8.572
120.0
0.0542
- 8.6
0.385
- 105.6
1250
0.040
86.3
8.459
117.8
0.0542
- 8.9
0.394
- 107.9
1300
0.037
79.4
8.354
115.8
0.0541
- 9.1
0.397
- 110.1
1350
0.035
72.3
8.255
113.7
0.0541
- 9.3
0.404
- 112.2
1400
0.034
64.0
8.152
111.7
0.0540
- 9.3
0.409
- 114.5
1450
0.032
57.1
8.061
109.6
0.0540
- 9.5
0.414
- 116.7
1500
0.031
51.1
7.962
107.6
0.0541
- 9.8
0.417
- 118.6
1550
0.031
44.3
7.860
105.6
0.0541
- 10.0
0.422
- 121.1
1600
0.031
37.9
7.767
103.6
0.0542
- 10.0
0.426
- 123.3
1650
0.030
33.0
7.675
101.6
0.0541
- 10.3
0.428
- 125.5
1700
0.030
28.6
7.586
99.7
0.0542
- 10.6
0.433
- 127.9
1750
0.029
22.7
7.501
97.7
0.0543
- 10.7
0.436
- 130.0
1800
0.028
21.9
7.414
95.7
0.0545
- 11.1
0.440
- 132.5
1850
0.028
18.7
7.327
93.7
0.0545
- 11.4
0.443
- 134.9
1900
0.026
16.5
7.236
91.8
0.0546
- 11.5
0.447
- 137.3
1950
0.025
19.0
7.144
89.8
0.0547
- 11.8
0.452
- 139.7
2000
0.025
17.3
7.057
87.9
0.0548
- 12.2
0.455
- 142.2
2050
0.023
18.5
6.966
86.0
0.0549
- 12.4
0.459
- 144.5
2100
0.023
22.9
6.876
84.1
0.0551
- 12.8
0.463
- 146.9
2150
0.022
23.0
6.789
82.2
0.0552
- 13.0
0.469
- 149.1
2200
0.021
27.2
6.698
80.3
0.0553
- 13.4
0.474
- 151.4
2250
0.021
29.4
6.611
78.5
0.0555
- 13.7
0.478
- 153.4
2300
0.020
31.4
6.526
76.7
0.0557
- 14.0
0.482
- 155.4
(continued)
MMG3H21NT1
RF Device Data
Freescale Semiconductor
9
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Source S - Parameters (VCC = 5 Vdc, ICC = 90 mA, TC = 25°C, 50 Ohm System) (continued)
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
2350
0.019
35.6
6.440
74.9
0.0558
- 14.3
0.487
- 157.5
2400
0.020
39.7
6.356
73.1
0.0560
- 14.6
0.490
- 159.5
2450
0.019
42.0
6.276
71.4
0.0561
- 15.0
0.494
- 161.4
2500
0.019
48.6
6.196
69.7
0.0563
- 15.2
0.499
- 163.1
2550
0.018
52.4
6.121
68.0
0.0564
- 15.6
0.502
- 164.9
2600
0.018
59.8
6.047
66.3
0.0567
- 16.0
0.506
- 166.6
2650
0.018
66.3
5.974
64.6
0.0568
- 16.3
0.509
- 168.4
2700
0.018
73.3
5.903
62.9
0.0570
- 16.6
0.514
- 170.1
2750
0.019
81.4
5.832
61.3
0.0572
- 16.9
0.516
- 171.7
2800
0.019
86.0
5.769
59.7
0.0575
- 17.2
0.518
- 173.4
2850
0.020
93.6
5.706
58.1
0.0578
- 17.5
0.522
- 174.8
2900
0.021
101.3
5.642
56.4
0.0581
- 17.8
0.521
- 176.5
2950
0.021
107.6
5.581
54.8
0.0584
- 18.2
0.524
- 177.8
3000
0.022
113.4
5.520
53.3
0.0587
- 18.5
0.526
- 179.3
3050
0.023
120.3
5.461
51.7
0.0592
- 19.0
0.529
179.1
3100
0.023
127.4
5.407
50.1
0.0595
- 19.1
0.532
177.9
3150
0.024
134.5
5.357
48.5
0.0600
- 19.6
0.533
176.5
3200
0.026
139.1
5.299
47.0
0.0603
- 20.1
0.536
175.2
3250
0.028
145.9
5.250
45.4
0.0606
- 20.5
0.537
173.8
3300
0.030
149.0
5.198
43.8
0.0610
- 21.1
0.537
172.3
3350
0.030
155.3
5.144
42.3
0.0613
- 21.6
0.538
171.2
3400
0.032
157.4
5.096
40.8
0.0617
- 22.0
0.540
169.9
3450
0.033
162.3
5.050
39.2
0.0620
- 22.5
0.541
168.6
3500
0.034
167.0
5.004
37.7
0.0625
- 22.9
0.542
167.3
3550
0.035
169.1
4.956
36.1
0.0629
- 23.5
0.543
166.1
3600
0.035
171.2
4.911
34.6
0.0633
- 23.9
0.546
164.6
3650
0.037
172.3
4.864
33.0
0.0637
- 24.6
0.546
163.3
3700
0.037
173.3
4.817
31.5
0.0641
- 25.1
0.549
162.1
3750
0.037
172.4
4.771
30.0
0.0644
- 25.5
0.551
160.7
3800
0.038
171.4
4.724
28.4
0.0647
- 26.3
0.551
159.2
3850
0.037
170.9
4.679
26.9
0.0652
- 26.7
0.553
157.8
3900
0.037
169.3
4.635
25.4
0.0655
- 27.4
0.557
156.3
3950
0.037
166.8
4.589
23.9
0.0659
- 28.0
0.559
154.6
4000
0.037
161.6
4.543
22.3
0.0662
- 28.6
0.561
153.3
MMG3H21NT1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MMG3H21NT1
RF Device Data
Freescale Semiconductor
11
MMG3H21NT1
12
RF Device Data
Freescale Semiconductor
MMG3H21NT1
RF Device Data
Freescale Semiconductor
13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3100: General Purpose Amplifier Biasing
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Apr. 2008
Description
• Initial Release of Data Sheet
MMG3H21NT1
14
RF Device Data
Freescale Semiconductor
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MMG3H21NT1
Document
Number:
RF
Device
Data MMG3H21NT1
Rev. 0, 4/2008
Freescale
Semiconductor
15