Document Number: MPC5533 Rev. 0.0, 10 Oct 2008 Freescale Semiconductor Data Sheet: Technical Data MPC5533 Microcontroller Data Sheet by: Microcontroller Division This document provides electrical specifications, pin assignments, and package diagrams for the MPC5533 microcontroller device. For functional characteristics, refer to the MPC5534 Microcontroller Reference Manual. 1 Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 4 3.1 Maximum Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3.2 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . 5 3.3 Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.4 EMI Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.5 ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3.6 VRC and POR Electrical Specifications . . . . . . . . . 9 3.7 Power-Up/Down Sequencing. . . . . . . . . . . . . . . . . 10 3.8 DC Electrical Specifications . . . . . . . . . . . . . . . . . 13 3.9 Oscillator and FMPLL Electrical Characteristics . . 20 3.10 eQADC Electrical Characteristics . . . . . . . . . . . . . 22 3.11 H7Fb Flash Memory Electrical Characteristics . . . 23 3.12 AC Specifications . . . . . . . . . . . . . . . . . . . . . . . . . 25 3.13 AC Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 4 Mechanicals. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.1 MPC5533 208 MAP BGA Pinout . . . . . . . . . . . . . . 4.2 MPC5533 324 PBGA Pinout . . . . . . . . . . . . . . . . . 4.3 MPC5533 208-Pin Package Dimensions. . . . . . . . 4.4 MPC5533 324-Pin Package Dimensions. . . . . . . . Overview The MPC5533 microcontroller (MCU) is a member of the MPC5500 family of microcontrollers built on the Power Architecture™ embedded technology. This family of parts has many new features coupled with high performance CMOS technology to provide substantial reduction of cost per feature and significant performance improvement over the MPC500 family. The host processor core of this device complies with the Power Architecture embedded category that is 100% user-mode compatible (including floating point library) with the original Power PC™ user instruction set architecture (UISA). The embedded architecture enhancements improve the performance in embedded applications. The core also has additional instructions, including digital signal processing (DSP) instructions, beyond the original Power PC instruction set. © Freescale Semiconductor, Inc., 2008. All rights reserved. 5 43 43 44 45 47 Revision History for the MPC5533 Data Sheet . . . . . . . 49 Overview The MPC5500 family of parts contains many new features coupled with high performance CMOS technology to provide significant performance improvement over the MPC565. The host processor core of the MPC5533 also includes an instruction set enhancement allowing variable length encoding (VLE). This allows optional encoding of mixed 16- and 32-bit instructions. With this enhancement, it is possible to significantly reduce the code size footprint. The MPC5533 has a single-level memory hierarchy consisting of 48-kilobytes (KB) on-chip SRAM and 768 KB of internal flash memory. Both the SRAM and the flash memory can hold instructions and data. The complex input/output timer functions of the MPC5533 are performed by an enhanced time processor unit (eTPU) engine. The eTPU engine controls 32 hardware channels. The eTPU has been enhanced over the TPU by providing: 24-bit timers, double-action hardware channels, variable number of parameters per channel, angle clock hardware, and additional control and arithmetic instructions. The eTPU is programmed using a high-level programming language. Off-chip communication is performed by a suite of serial protocols including controller area networks (FlexCANs), enhanced deserial/serial peripheral interfaces (DSPIs), and an enhanced serial communications interface (eSCI). The MCU has an on-chip enhanced queued analog-to-digital converter (eQADC) with a 5 V conversion range. The 324 package has 40-channels; the 208 package has 34 channels. The system integration unit (SIU) performs several chip-wide configuration functions. Pad configuration and general-purpose input and output (GPIO) are controlled from the SIU. Interrupts and reset control are also determined by the SIU. The internal multiplexer sub-block (IMUX) provides multiplexing of eQADC trigger sources and external interrupt signal multiplexing. MPC5533 Microcontroller Data Sheet, Rev. 0.0 2 Freescale Semiconductor Ordering Information 2 Ordering Information M PC 5533 M VF 80 R Qualification status Core code Device number Temperature range Package identifier Operating frequency (MHz) Tape and reel status Temperature Range M = –40° C to 125° C Package Identifier VF = 208MAPBGA SnPb VM = 208MAPBGA Pb-free ZQ = 324PBGA SnPb VZ = 324PBGA Pb-free Operating Frequency 40 = 40 MHz 66 = 66 MHz 80 = 80 MHz Tape and Reel Status R = Tape and reel (blank) = Trays Qualification Status P = Pre qualification M = Fully spec. qualified, general market flow S = Fully spec. qualified, automotive flow Note: Not all options are available on all devices. Refer to Table 1. Figure 1. MPC5500 Family Part Number Example Unless noted in this data sheet, all specifications apply from TL to TH. Table 1. Orderable Part Numbers Speed (MHz) Freescale Part Number Package Description MPC5533MVM80 MPC5533MVM66 MPC5533 208 package Lead-free (PbFree) MPC5533MVM40 MPC5533MVF80 MPC5533MVF66 MPC5533 208 package Leaded (SnPb) MPC5533MVF40 MPC5533MVZ80 MPC5533MVZ66 MPC5533 324 package Lead-free (PbFree) MPC5533MVZ40 MPC5533MZQ80 MPC5533MZQ66 MPC5533MZQ40 1 2 Operating Temperature 1 MPC5533 324 package Leaded (SnPb) Nominal Max. 2 (fMAX) 80 82 66 68 40 42 80 82 66 68 40 42 80 82 66 68 40 42 80 82 66 68 40 42 Min. (TL) Max. (TH) –40° C 125° C –40° C 125° C –40° C 125° C –40° C 125° C The lowest ambient operating temperature is referenced by TL; the highest ambient operating temperature is referenced by TH. Speed is the nominal maximum frequency. Max. speed is the maximum speed allowed including frequency modulation (FM). 42 MHz parts allow for 40 MHz system clock + 2% FM; 68 MHz parts allow for 66 MHz system clock + 2% FM, and 82 MHz parts allow for 80 MHz system clock + 2% FM. MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 3 Electrical Characteristics 3 Electrical Characteristics This section contains detailed information on power considerations, DC/AC electrical characteristics, and AC timing specifications for the MCU. 3.1 Maximum Rating Table 2. Absolute Maximum Ratings 1 Spec Characteristic Symbol Min. Max. Unit 1 1.5 V core supply voltage 2 VDD –0.3 1.7 V 2 Flash program/erase voltage VPP –0.3 6.5 V 4 Flash read voltage VFLASH –0.3 4.6 V 5 SRAM standby voltage VSTBY –0.3 1.7 V 6 Clock synthesizer voltage VDDSYN –0.3 4.6 V 7 3.3 V I/O buffer voltage VDD33 –0.3 4.6 V 8 Voltage regulator control input voltage VRC33 –0.3 4.6 V 9 Analog supply voltage (reference to VSSA) VDDA –0.3 5.5 V VDDE –0.3 4.6 V VDDEH –0.3 6.5 V –1.0 5 –1.0 5 6.5 6 4.6 7 V 10 11 12 I/O supply voltage (fast I/O pads) 3 I/O supply voltage (slow and medium I/O pads) 3 4 DC input voltage VDDEH powered I/O pads VDDE powered I/O pads VIN 13 Analog reference high voltage (reference to VRL) VRH –0.3 5.5 V 14 VSS to VSSA differential voltage VSS – VSSA –0.1 0.1 V 15 VDD to VDDA differential voltage VDD – VDDA –VDDA VDD V 16 VREF differential voltage VRH – VRL –0.3 5.5 V 17 VRH to VDDA differential voltage VRH – VDDA –5.5 5.5 V 18 VRL to VSSA differential voltage VRL – VSSA –0.3 0.3 V 19 VDDEH to VDDA differential voltage VDDEH – VDDA –VDDA VDDEH V 20 VDDF to VDD differential voltage VDDF – VDD –0.3 0.3 V 21 VRC33 to VDDSYN differential voltage spec has been moved to Table 9 DC Electrical Specifications, Spec 43a. 22 VSSSYN to VSS differential voltage VSSSYN – VSS –0.1 0.1 V 23 VRCVSS to VSS differential voltage VRCVSS – VSS –0.1 0.1 V 24 Maximum DC digital input current 8 (per pin, applies to all digital pins) 4 IMAXD –2 2 mA 25 Maximum DC analog input current 9 (per pin, applies to all analog pins) IMAXA –3 3 mA 26 Maximum operating temperature range 10 Die junction temperature TJ TL 150.0 oC 27 Storage temperature range TSTG –55.0 150.0 oC MPC5533 Microcontroller Data Sheet, Rev. 0.0 4 Freescale Semiconductor Electrical Characteristics Table 2. Absolute Maximum Ratings 1 (continued) Spec 28 29 Characteristic Symbol Min. Max. Maximum solder temperature 11 Lead free (Pb-free) Leaded (SnPb) TSDR — — 260.0 245.0 Moisture sensitivity level 12 MSL — 3 Unit o C 1 Functional operating conditions are given in the DC electrical specifications. Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Stress beyond any of the listed maxima can affect device reliability or cause permanent damage to the device. 2 1.5 V ± 10% for proper operation. This parameter is specified at a maximum junction temperature of 150 oC. 3 All functional non-supply I/O pins are clamped to VSS and VDDE, or VDDEH. 4 AC signal overshoot and undershoot of up to ± 2.0 V of the input voltages is permitted for an accumulative duration of 60 hours over the complete lifetime of the device (injection current not limited for this duration). 5 Internal structures hold the voltage greater than –1.0 V if the injection current limit of 2 mA is met. Keep the negative DC voltage greater than –0.6 V on SINB during the internal power-on reset (POR) state. 6 Internal structures hold the input voltage less than the maximum voltage on all pads powered by V DDEH supplies, if the maximum injection current specification is met (2 mA for all pins) and VDDEH is within the operating voltage specifications. 7 Internal structures hold the input voltage less than the maximum voltage on all pads powered by V DDE supplies, if the maximum injection current specification is met (2 mA for all pins) and VDDE is within the operating voltage specifications. 8 Total injection current for all pins (including both digital and analog) must not exceed 25 mA. 9 Total injection current for all analog input pins must not exceed 15 mA. 10 Lifetime operation at these specification limits is not guaranteed. 11 Moisture sensitivity profile per IPC/JEDEC J-STD-020D. 12 Moisture sensitivity per JEDEC test method A112. 3.2 Thermal Characteristics The shaded rows in the following table indicate information specific to a four-layer board. Table 3. MPC5533 Thermal Characteristic Package Spec 1 MPC5533 Thermal Characteristic Junction to ambient 1, 2, natural convection (one-layer board) 1, 3 208 MAPBGA 324 PBGA Unit RθJA 42 34 °C/W RθJA 26 23 °C/W 2 Junction to ambient 3 Junction to ambient (@200 ft./min., one-layer board) RθJMA 34 28 °C/W 4 Junction to ambient (@200 ft./min., four-layer board 2s2p) RθJMA 22 20 °C/W RθJB 15 15 °C/W RθJC 8 10 °C/W ΨJT 2 2 °C/W 5 6 7 , natural convection (four-layer board 2s2p) Symbol 4 Junction to board (four-layer board 2s2p) Junction to case 5 6 Junction to package top , natural convection 1 Junction temperature is a function of: on-chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of other board components, and board thermal resistance. 2 Per SEMI G38-87 and JEDEC JESD51-2 with the single-layer board in a horizontal position. 3 Per JEDEC JESD51-6 with the board in a horizontal position. 4 Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is measured on the top surface of the board near the package. MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 5 Electrical Characteristics 5 Indicates the average thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method 1012.1) with the cold plate temperature used for the case temperature. 6 The thermal characterization parameter indicates the temperature difference between the package top and the junction temperature per JEDEC JESD51-2. 3.2.1 General Notes for Specifications at Maximum Junction Temperature An estimation of the device junction temperature, TJ, can be obtained from the equation: TJ = TA + (RθJA × PD) where: TA = ambient temperature for the package (oC) RθJA = junction to ambient thermal resistance (oC/W) PD = power dissipation in the package (W) The thermal resistance values used are based on the JEDEC JESD51 series of standards to provide consistent values for estimations and comparisons. The difference between the values determined for the single-layer (1s) board compared to a four-layer board that has two signal layers, a power and a ground plane (2s2p), demonstrate that the effective thermal resistance is not a constant. The thermal resistance depends on the: • Construction of the application board (number of planes) • Effective size of the board which cools the component • Quality of the thermal and electrical connections to the planes • Power dissipated by adjacent components Connect all the ground and power balls to the respective planes with one via per ball. Using fewer vias to connect the package to the planes reduces the thermal performance. Thinner planes also reduce the thermal performance. When the clearance between the vias leave the planes virtually disconnected, the thermal performance is also greatly reduced. As a general rule, the value obtained on a single-layer board is within the normal range for the tightly packed printed circuit board. The value obtained on a board with the internal planes is usually within the normal range if the application board has: • One oz. (35 micron nominal thickness) internal planes • Components are well separated • Overall power dissipation on the board is less than 0.02 W/cm2 The thermal performance of any component depends on the power dissipation of the surrounding components. In addition, the ambient temperature varies widely within the application. For many natural convection and especially closed box applications, the board temperature at the perimeter (edge) of the package is approximately the same as the local air temperature near the device. Specifying the local ambient conditions explicitly as the board temperature provides a more precise description of the local ambient conditions that determine the temperature of the device. MPC5533 Microcontroller Data Sheet, Rev. 0.0 6 Freescale Semiconductor Electrical Characteristics At a known board temperature, the junction temperature is estimated using the following equation: TJ = TB + (RθJB × PD) where: TJ = junction temperature (oC) TB = board temperature at the package perimeter (oC/W) RθJB = junction-to-board thermal resistance (oC/W) per JESD51-8 PD = power dissipation in the package (W) When the heat loss from the package case to the air does not factor into the calculation, an acceptable value for the junction temperature is predictable. Ensure the application board is similar to the thermal test condition, with the component soldered to a board with internal planes. The thermal resistance is expressed as the sum of a junction-to-case thermal resistance plus a case-to-ambient thermal resistance: RθJA = RθJC + RθCA where: RθJA = junction-to-ambient thermal resistance (oC/W) RθJC = junction-to-case thermal resistance (oC/W) RθCA = case-to-ambient thermal resistance (oC/W) RθJC is device related and is not affected by other factors. The thermal environment can be controlled to change the case-to-ambient thermal resistance, RθCA. For example, change the air flow around the device, add a heat sink, change the mounting arrangement on the printed circuit board, or change the thermal dissipation on the printed circuit board surrounding the device. This description is most useful for packages with heat sinks where 90% of the heat flow is through the case to heat sink to ambient. For most packages, a better model is required. A more accurate two-resistor thermal model can be constructed from the junction-to-board thermal resistance and the junction-to-case thermal resistance. The junction-to-case thermal resistance describes when using a heat sink or where a substantial amount of heat is dissipated from the top of the package. The junction-to-board thermal resistance describes the thermal performance when most of the heat is conducted to the printed circuit board. This model can be used to generate simple estimations and for computational fluid dynamics (CFD) thermal models. To determine the junction temperature of the device in the application on a prototype board, use the thermal characterization parameter (ΨJT) to determine the junction temperature by measuring the temperature at the top center of the package case using the following equation: TJ = TT + (ΨJT × PD) where: TT = thermocouple temperature on top of the package (oC) ΨJT = thermal characterization parameter (oC/W) PD = power dissipation in the package (W) The thermal characterization parameter is measured in compliance with the JESD51-2 specification using a 40-gauge type T thermocouple epoxied to the top center of the package case. Position the thermocouple MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 7 Electrical Characteristics so that the thermocouple junction rests on the package. Place a small amount of epoxy on the thermocouple junction and approximately 1 mm of wire extending from the junction. Place the thermocouple wire flat against the package case to avoid measurement errors caused by the cooling effects of the thermocouple wire. References: Semiconductor Equipment and Materials International 3081 Zanker Rd. San Jose, CA., 95134 (408) 943-6900 MIL-SPEC and EIA/JESD (JEDEC) specifications are available from Global Engineering Documents at 800-854-7179 or 303-397-7956. JEDEC specifications are available on the web at http://www.jedec.org. • 1. C.E. Triplett and B. Joiner, “An Experimental Characterization of a 272 PBGA Within an Automotive Engine Controller Module,” Proceedings of SemiTherm, San Diego, 1998, pp. 47–54. • 2. G. Kromann, S. Shidore, and S. Addison, “Thermal Modeling of a PBGA for Air-Cooled Applications,” Electronic Packaging and Production, pp. 53–58, March 1998. • 3. B. Joiner and V. Adams, “Measurement and Simulation of Junction to Board Thermal Resistance and Its Application in Thermal Modeling,” Proceedings of SemiTherm, San Diego, 1999, pp. 212–220. 3.3 Package The MPC5533 is available in packaged form. Read the package options in Section 2, “Ordering Information.” Refer to Section 4, “Mechanicals,” for pinouts and package drawings. 3.4 EMI (Electromagnetic Interference) Characteristics Table 4. EMI Testing Specifications 1 Spec Characteristic Minimum Typical Maximum Unit 0.15 — 1000 MHz 1 Scan range 2 Operating frequency — — fMAX MHz 3 VDD operating voltages — 1.5 — V 4 VDDSYN, VRC33, VDD33, VFLASH, VDDE operating voltages — 3.3 — V 5 VPP, VDDEH, VDDA operating voltages — 5.0 — V 6 Maximum amplitude — — 14 2 32 3 dBuV 7 Operating temperature — — 25 oC 1 EMI testing and I/O port waveforms per SAE J1752/3 issued 1995-03. Qualification testing was performed on the MPC5554 and applied to the MPC5500 family as generic EMI performance data. 2 Measured with the single-chip EMI program. 3 Measured with the expanded EMI program. MPC5533 Microcontroller Data Sheet, Rev. 0.0 8 Freescale Semiconductor Electrical Characteristics 3.5 ESD (Electromagnetic Static Discharge) Characteristics Table 5. ESD Ratings 1, 2 Characteristic Symbol Value Unit 2000 V R1 1500 Ω C 100 pF ESD for human body model (HBM) HBM circuit description 500 (all pins) ESD for field induced charge model (FDCM) V 750 (corner pins) Number of pulses per pin: Positive pulses (HBM) Negative pulses (HBM) — — 1 1 — — Interval of pulses — 1 second 1 2 All ESD testing conforms to CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. Device failure is defined as: ‘If after exposure to ESD pulses, the device does not meet the device specification requirements, which includes the complete DC parametric and functional testing at room temperature and hot temperature. 3.6 Voltage Regulator Controller (VRC) and Power-On Reset (POR) Electrical Specifications The following table lists the VRC and POR electrical specifications: Table 6. VRC/POR Electrical Specifications Spec 1 Characteristic 3.3 V (VDDSYN) POR 3 RESET pin supply (VDDEH6) POR 1, 2 1 VRC33 voltage 6 Current can be sourced 7 Max. Units VPOR15 1.1 1.1 1.35 1.35 V Asserted (ramp up) Negated (ramp up) Asserted (ramp down) Negated (ramp down) VPOR33 0.0 2.0 2.0 0.0 0.30 2.85 2.85 0.30 V Negated (ramp up) Asserted (ramp down) VPOR5 2.0 2.0 2.85 2.85 V VTRANS_START 1.0 2.0 V When VRC allows the pass transistor to completely turn on 3, 4 VTRANS_ON 2.0 2.85 V When the voltage is greater than the voltage at which the VRC keeps the 1.5 V supply in regulation 5, 6 VVRC33REG 3.0 — V 11.0 — mA 9.0 — mA 7.5 — mA — 1.0 V Before VRC allows the pass transistor to start turning on 4 5 Min. Negated (ramp up) Asserted (ramp down) 1.5 V (VDD) POR 1 2 Symbol by VRCCTL at Tj: – 40o C o 25 C 150o 8 IVRCCTL 7 C Voltage differential during power up such that: VDD33 can lag VDDSYN or VDDEH6, before VDDSYN and VDDEH6 reach the VPOR33 and VPOR5 minimums respectively. VDD33_LAG MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 9 Electrical Characteristics Table 6. VRC/POR Electrical Specifications (continued) Spec 9 10 Characteristic Symbol Min. Max. Units — — 50 V/ms 35 — — 40 — — 50 500 — Absolute value of slew rate on power supply pins Required gain at Tj: IDD ÷ IVRCCTL (@ fsys = fMAX) 6, 7, 8, 9 o – 40 C o 25 C BETA10 o 150 C 1 On power up, assert RESET before VPOR15, VPOR33, and VPOR5 negate (internal POR). RESET must remain asserted until the power supplies are within the operating conditions as specified in Table 9 DC Electrical Specifications. On power down, assert RESET before any power supplies fall outside the operating conditions and until the internal POR asserts. 2 VIL_S (Table 9, Spec15) is guaranteed to scale with VDDEH6 down to VPOR5. 3 Supply full operating current for the 1.5 V supply when the 3.3 V supply reaches this range. 4 It is possible to reach the current limit during ramp up—do not treat this event as short circuit current. 5 At peak current for device. 6 Requires compliance with Freescale’s recommended board requirements and transistor recommendations. Board signal traces/routing from the VRCCTL package signal to the base of the external pass transistor and between the emitter of the pass transistor to the VDD package signals must have a maximum of 100 nH inductance and minimal resistance (less than 1 Ω). VRCCTL must have a nominal 1 μF phase compensation capacitor to ground. VDD must have a 20 μF (nominal) bulk capacitor (greater than 4 μF over all conditions, including lifetime). Place high-frequency bypass capacitors consisting of eight 0.01 μF, two 0.1 μF, and one 1 μF capacitors around the package on the VDD supply signals. 7 I VRCCTL is measured at the following conditions: VDD = 1.35 V, VRC33 = 3.1 V, VVRCCTL = 2.2 V. 8 Refer to Table 1 for the maximum operating frequency. 9 Values are based on I DD from high-use applications as explained in the IDD Electrical Specification. 10 BETA represents the worst-case external transistor. It is measured on a per-part basis and calculated as (I DD ÷ IVRCCTL). 3.7 Power-Up/Down Sequencing Power sequencing between the 1.5 V power supply and VDDSYN or the RESET power supplies is required if using an external 1.5 V power supply with VRC33 tied to ground (GND). To avoid power-sequencing, VRC33 must be powered up within the specified operating range, even if the on-chip voltage regulator controller is not used. Refer to Section 3.7.2, “Power-Up Sequence (VRC33 Grounded),” and Section 3.7.3, “Power-Down Sequence (VRC33 Grounded).” Power sequencing requires that VDD33 must reach a certain voltage where the values are read as ones before the POR signal negates. Refer to Section 3.7.1, “Input Value of Pins During POR Dependent on VDD33.” Although power sequencing is not required between VRC33 and VDDSYN during power up, VRC33 must not lead VDDSYN by more than 600 mV or lag by more than 100 mV for the VRC stage turn-on to operate within specification. Higher spikes in the emitter current of the pass transistor occur if VRC33 leads or lags VDDSYN by more than these amounts. The value of that higher spike in current depends on the board power supply circuitry and the amount of board level capacitance. Furthermore, when all of the PORs negate, the system clock starts to toggle, adding another large increase of the current consumed by VRC33. If VRC33 lags VDDSYN by more than 100 mV, the increase in current consumed can drop VDD low enough to assert the 1.5 V POR again. Oscillations are possible when the 1.5 V POR asserts and stops the system clock, causing the voltage on VDD to rise until the 1.5 V POR negates again. All oscillations stop when VRC33 is powered sufficiently. MPC5533 Microcontroller Data Sheet, Rev. 0.0 10 Freescale Semiconductor Electrical Characteristics When powering down, VRC33 and VDDSYN have no delta requirement to each other, because the bypass capacitors internal and external to the device are already charged. When not powering up or down, no delta between VRC33 and VDDSYN is required for the VRC to operate within specification. There are no power up/down sequencing requirements to prevent issues such as latch-up, excessive current spikes, and so on. Therefore, the state of the I/O pins during power up and power down varies depending on which supplies are powered. Table 7 gives the pin state for the sequence cases for all pins with pad type pad_fc (fast type). Table 7. Pin Status for Fast Pads During the Power Sequence VDDE VDD33 VDD POR Pin Status for Fast Pad Output Driver pad_fc (fast) Low — — Asserted Low VDDE Low Low Asserted High VDDE Low VDD Asserted High VDDE VDD33 Low Asserted High impedance (Hi-Z) VDDE VDD33 VDD Asserted Hi-Z VDDE VDD33 VDD Negated Functional Table 8 gives the pin state for the sequence cases for all pins with pad type pad_mh (medium type) and pad_sh (slow type). Table 8. Pin Status for Medium and Slow Pads During the Power Sequence VDDEH VDD POR Pin Status for Medium and Slow Pad Output Driver pad_mh (medium) pad_sh (slow) Low — Asserted Low VDDEH Low Asserted High impedance (Hi-Z) VDDEH VDD Asserted Hi-Z VDDEH VDD Negated Functional The values in Table 7 and Table 8 do not include the effect of the weak-pull devices on the output pins during power up. Before exiting the internal POR state, the pins go to a high-impedance state until POR negates. When the internal POR negates, the functional state of the signal during reset applies and the weak-pull devices (up or down) are enabled as defined in the device reference manual. If VDD is too low to correctly propagate the logic signals, the weak-pull devices can pull the signals to VDDE and VDDEH. To avoid this condition, minimize the ramp time of the VDD supply to a time period less than the time required to enable the external circuitry connected to the device outputs. MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 11 Electrical Characteristics 3.7.1 Input Value of Pins During POR Dependent on VDD33 When powering up the device, VDD33 must not lag the latest VDDSYN or RESET power pin (VDDEH6) by more than the VDD33 lag specification listed in Table 6, spec 8. This avoids accidentally selecting the bypass clock mode because the internal versions of PLLCFG[0:1] and RSTCFG are not powered and therefore cannot read the default state when POR negates. VDD33 can lag VDDSYN or the RESET power pin (VDDEH6), but cannot lag both by more than the VDD33 lag specification. This VDD33 lag specification applies during power up only. VDD33 has no lead or lag requirements when powering down. 3.7.2 Power-Up Sequence (VRC33 Grounded) The 1.5 V VDD power supply must rise to 1.35 V before the 3.3 V VDDSYN power supply and the RESET power supply rises above 2.0 V. This ensures that digital logic in the PLL for the 1.5 V power supply does not begin to operate below the specified operation range lower limit of 1.35 V. Because the internal 1.5 V POR is disabled, the internal 3.3 V POR or the RESET power POR must hold the device in reset. Since they can negate as low as 2.0 V, VDD must be within specification before the 3.3 V POR and the RESET POR negate. VDDSYN and RESET Power VDD 2.0 V 1.35 V VDD must reach 1.35 V before VDDSYN and the RESET power reach 2.0 V Figure 2. Power-Up Sequence (VRC33 Grounded) 3.7.3 Power-Down Sequence (VRC33 Grounded) The only requirement for the power-down sequence with VRC33 grounded is if VDD decreases to less than its operating range, VDDSYN or the RESET power must decrease to less than 2.0 V before the VDD power increases to its operating range. This ensures that the digital 1.5 V logic, which is reset only by an ORed POR and can cause the 1.5 V supply to decrease less than its specification value, resets correctly. MPC5533 Microcontroller Data Sheet, Rev. 0.0 12 Freescale Semiconductor Electrical Characteristics 3.8 DC Electrical Specifications Table 9. DC Electrical Specifications (TA = TL – TH) Spec 1 Characteristic Core supply voltage (average DC RMS voltage) 1 Symbol Min Max. Unit VDD 1.35 1.65 V VDDE 1.62 3.6 V 2 Input/output supply voltage (fast input/output) 3 Input/output supply voltage (slow and medium input/output) VDDEH 3.0 5.25 V 4 3.3 V input/output buffer voltage VDD33 3.0 3.6 V 5 Voltage regulator control input voltage VRC33 3.0 3.6 V VDDA 4.5 5.25 V VPP 4.5 5.25 V 2 6 Analog supply voltage 8 Flash programming voltage 3 9 Flash read voltage VFLASH 3.0 3.6 V 10 SRAM standby voltage 4 VSTBY 0.8 1.2 V 11 Clock synthesizer operating voltage VDDSYN 3.0 3.6 V 12 Fast I/O input high voltage VIH_F 0.65 × VDDE VDDE + 0.3 V 13 Fast I/O input low voltage VIL_F VSS – 0.3 0.35 × VDDE V 14 Medium and slow I/O input high voltage VIH_S 0.65 × VDDEH VDDEH + 0.3 V 15 Medium and slow I/O input low voltage VIL_S VSS – 0.3 0.35 × VDDEH V 16 Fast input hysteresis VHYS_F 0.1 × VDDE V 17 Medium and slow I/O input hysteresis VHYS_S 0.1 × VDDEH V 18 Analog input voltage VINDC VSSA – 0.3 VDDA + 0.3 V 19 Fast output high voltage ( IOH_F = –2.0 mA ) VOH_F 0.8 × VDDE — V 20 Slow and medium output high voltage IOH_S = –2.0 mA IOH_S = –1.0 mA VOH_S 0.80 × VDDEH 0.85 × VDDEH — V 21 Fast output low voltage ( IOL_F = 2.0 mA ) VOL_F — 0.2 × VDDE V 22 Slow and medium output low voltage IOL_S = 2.0 mA IOL_S = 1.0 mA VOL_S — Load capacitance (fast I/O) 5 DSC (SIU_PCR[8:9] ) = 0b00 = 0b01 = 0b10 = 0b11 CL 24 Input capacitance (digital pins) 25 26 23 V 0.20 × VDDEH 0.15 × VDDEH — — — — 10 20 30 50 pF pF pF pF CIN — 7 pF Input capacitance (analog pins) CIN_A — 10 pF Input capacitance: (Shared digital and analog pins AN[12]_MA[0]_SDS, AN[13]_MA[1]_SDO, AN[14]_MA[2]_SDI, and AN[15]_FCK) CIN_M — 12 pF MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 13 Electrical Characteristics Table 9. DC Electrical Specifications (TA = TL – TH) (continued) Spec Characteristic Symbol Min Max. Unit 27a Operating current 1.5 V supplies @ 82 MHz: 6, 7 VDD (including VDDF max current) @1.65 V high use 8, 9, 10, 11, 12 VDD (including VDDF max current) @1.35 V high use 8, 9, 10, 11, 12 IDD IDD — — 250 180 mA mA 27b Operating current 1.5 V supplies @ 68 MHz: 13, 14 VDD (including VDDF max current) @1.65 V high use15, 16, 17 VDD (including VDDF max current) @1.35 V high use 15, 16, 17 IDD IDD — — 210 160 mA mA 27c Operating current 1.5 V supplies @ 42 MHz: 13, 14 VDD (including VDDF max current) @1.65 V high use 15, 16, 17 VDD (including VDDF max current) @1.35 V high use 15, 16, 17 IDD IDD — — 130 110 mA mA IDD_STBY IDD_STBY IDD_STBY — — — 20 30 50 μA μA μA IDD_STBY @ 60o C VSTBY @ 0.8 V VSTBY @ 1.0 V VSTBY @ 1.2 V IDD_STBY IDD_STBY IDD_STBY — — — 70 100 200 μA μA μA IDD_STBY @ 150o C (Tj) VSTBY @ 0.8 V VSTBY @ 1.0 V VSTBY @ 1.2 V IDD_STBY IDD_STBY IDD_STBY — — — 1200 1500 2000 μA μA μA VDD33 19 IDD_33 — 2 + (values derived from procedure of footnote 19) mA VFLASH IVFLASH — 10 mA VDDSYN IDDSYN — 15 mA Operating current 5.0 V supplies (12 MHz ADCLK): VDDA (VDDA0 + VDDA1) Analog reference supply current (VRH, VRL) VPP IDD_A IREF IPP — — — 20.0 1.0 25.0 mA mA mA Operating current VDDE supplies: 20 VDDEH1 VDDE2 VDDE3 VDDEH4 VDDE5 VDDEH6 VDDE7 VDDEH8 VDDEH9 IDD1 IDD2 IDD3 IDD4 IDD5 IDD6 IDD7 IDD8 IDD9 — — — — — — — — — Refer to Footnote 20 mA mA mA mA mA mA mA mA mA 27d Refer to Figure 3 for an interpolation of this data.18 IDD_STBY @ 25o C VSTBY @ 0.8 V VSTBY @ 1.0 V VSTBY @ 1.2 V 28 29 30 Operating current 3.3 V supplies @ fMAX MHz MPC5533 Microcontroller Data Sheet, Rev. 0.0 14 Freescale Semiconductor Electrical Characteristics Table 9. DC Electrical Specifications (TA = TL – TH) (continued) Spec 31 Characteristic Min Max. Unit 10 20 20 110 130 170 μA μA μA 10 20 20 100 130 170 μA μA μA IACT_S 10 20 150 170 μA μA IINACT_D –2.5 2.5 μA IIC –2.0 2.0 mA IINACT_A –150 150 nA IINACT_AD –2.5 2.5 μA VSS – VSSA –100 100 mV VRL VSSA – 0.1 VSSA + 0.1 V VRL – VSSA –100 100 mV VRH VDDA – 0.1 VDDA + 0.1 V VRH – VRL 4.5 5.25 V Fast I/O weak pullup current 21 1.62–1.98 V 2.25–2.75 V 3.00–3.60 V IACT_F Fast I/O weak pulldown current 21 1.62–1.98 V 2.25–2.75 V 3.00–3.60 V 32 Symbol Slow and medium I/O weak pullup/down current 21 3.0–3.6 V 4.5–5.5 V 33 I/O input leakage current 22 34 DC injection current (per pin) 35 Analog input current, channel off 23 35a Analog input current, shared analog / digital pins (AN[12], AN[13], AN[14], AN[15]) 36 VSS to VSSA differential voltage 24 37 Analog reference low voltage 38 VRL differential voltage 39 Analog reference high voltage 40 VREF differential voltage 41 VSSSYN to VSS differential voltage VSSSYN – VSS –50 50 mV 42 VRCVSS to VSS differential voltage VRCVSS – VSS –50 50 mV 43 VDDF to VDD differential voltage VDDF – VDD –100 100 mV 43a VRC33 to VDDSYN differential voltage VRC33 – VDDSYN –0.1 0.1 25 V VIDIFF –2.5 2.5 V TA = (TL to TH) TL TH οC — — 50 V/ms 44 Analog input differential signal range (with common mode 2.5 V) 45 Operating temperature range, ambient (packaged) 46 Slew rate on power-supply pins 1 VDDE2 and VDDE3 are limited to 2.25–3.6 V only if EBTS = 0; VDDE2 and VDDE3 have a range of 1.6–3.6 V if EBTS = 1. | VDDA0 – VDDA1 | must be < 0.1 V. 3 VPP can drop to 3.0 V during read operations. 4 If standby operation is not required, connect V STBY to ground. 5 Applies to CLKOUT, external bus pins, and Nexus pins. 6 Maximum average RMS DC current. 7 Figure 3 shows an illustration of the I DD_STBY values interpolated for these temperature values. 8 Average current measured on Automotive benchmark. 9 Peak currents can be higher on specialized code. 10 High use current measured while running optimized SPE assembly code with all channels of the eTPU running autonomously, plus the eDMA transferring data continuously from SRAM to SRAM. 2 MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 15 Electrical Characteristics 11 Power requirements for the VDD33 supply depend on the frequency of operation, load of all I/O pins, and the voltages on the I/O segments. Refer to Table 11 for values to calculate power dissipation for specific operation. 12 Power requirements for each I/O segment are dependent on the frequency of operation and load of the I/O pins on a particular I/O segment, and the voltage of the I/O segment. Refer to Table 10 for values to calculate power dissipation for specific operation. The total power consumption of an I/O segment is the sum of the individual power consumptions for each pin on the segment. 13 Maximum average RMS DC current. 14 Figure 3 shows an illustration of the IDD_STBY values interpolated for these temperature values. 15 Average current measured on automotive benchmark. 16 Peak currents can be higher on specialized code. 17 High use current measured while running optimized SPE assembly code with all channels of the eTPU running autonomously, plus the eDMA transferring data continuously from SRAM to SRAM. 18 Figure 3 shows an illustration of the IDD_STBY values interpolated for these temperature values. 19 Power requirements for the VDD33 supply depend on the frequency of operation, load of all I/O pins, and the voltages on the I/O segments. Refer to Table 11 for values to calculate the power dissipation for a specific operation. 20 Power requirements for each I/O segment are dependent on the frequency of operation and load of the I/O pins on a particular I/O segment, and the voltage of the I/O segment. Refer to Table 10 for values to calculate power dissipation for specific operation. The total power consumption of an I/O segment is the sum of the individual power consumptions for each pin on the segment. 21 Absolute value of current, measured at V and V . IL IH 22 Weak pullup/down inactive. Measured at V DDE = 3.6 V and VDDEH = 5.25 V. Applies to pad types: pad_fc, pad_sh, and pad_mh. 23 Maximum leakage occurs at maximum operating temperature. Leakage current decreases by approximately one-half for each 8 oC to 12 oC, in the ambient temperature range of 50 oC to 125 oC. Applies to pad types: pad_a and pad_ae. 24 V SSA refers to both VSSA0 and VSSA1. | VSSA0 – VSSA1 | must be < 0.1 V. 25 Up to 0.6 V during power up and power down. MPC5533 Microcontroller Data Sheet, Rev. 0.0 16 Freescale Semiconductor Electrical Characteristics Figure 3 shows an approximate interpolation of the ISTBY worst-case specification to estimate values at different voltages and temperatures. The vertical lines shown at 25 οC, 60 οC, and 150 οC in Figure 3 are the IDD_STBY specifications (27d) listed in Table 9. Istby vs. Junction Tem p 2000 1900 1800 1700 1600 1500 1400 1300 µA uA 1200 1100 0.8V 1000 900 800 1.0V 1.2V 700 600 500 400 300 200 100 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Tem p (C) Figure 3. ISTBY Worst-case Specifications MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 17 Electrical Characteristics 3.8.1 I/O Pad Current Specifications The power consumption of an I/O segment depends on the usage of the pins on a particular segment. The power consumption is the sum of all output pin currents for a segment. The output pin current can be calculated from Table 10 based on the voltage, frequency, and load on the pin. Use linear scaling to calculate pin currents for voltage, frequency, and load parameters that fall outside the values given in Table 10. Table 10. I/O Pad Average DC Current (TA = TL – TH)1 Spec Pad Type Symbol 1 2 Frequency (MHz) Load2 (pF) Voltage (V) Drive Select / Slew Rate Control Setting Current (mA) 25 50 5.25 11 8.0 10 50 5.25 01 3.2 2 50 5.25 00 0.7 4 2 200 5.25 00 2.4 5 50 50 5.25 11 17.3 3 6 Slow IDRV_SH 20 50 5.25 01 6.5 3.33 50 5.25 00 1.1 8 3.33 200 5.25 00 3.9 9 66 10 3.6 00 2.8 10 66 20 3.6 01 5.2 11 66 30 3.6 10 8.5 12 66 50 3.6 11 11.0 13 66 10 1.98 00 1.6 14 66 20 1.98 01 2.9 15 66 30 1.98 10 4.2 16 66 50 1.98 11 6.7 17 56 10 3.6 00 2.4 18 56 20 3.6 01 4.4 19 56 30 3.6 10 7.2 7 20 Medium IDRV_MH 56 50 3.6 11 9.3 56 10 1.98 00 1.3 22 56 20 1.98 01 2.5 23 56 30 1.98 10 3.5 24 56 50 1.98 11 5.7 25 40 10 3.6 00 1.7 26 40 20 3.6 01 3.1 27 40 30 3.6 10 5.1 21 Fast IDRV_FC 28 40 50 3.6 11 6.6 29 40 10 1.98 00 1.0 30 40 20 1.98 01 1.8 31 40 30 1.98 10 2.5 32 40 50 1.98 11 4.0 1 These values are estimates from simulation and are not tested. Currents apply to output pins only. 2 All loads are lumped. MPC5533 Microcontroller Data Sheet, Rev. 0.0 18 Freescale Semiconductor Electrical Characteristics 3.8.2 I/O Pad VDD33 Current Specifications The power consumption of the VDD33 supply dependents on the usage of the pins on all I/O segments. The power consumption is the sum of all input and output pin VDD33 currents for all I/O segments. The output pin VDD33 current can be calculated from Table 11 based on the voltage, frequency, and load on all fast (pad_fc) pins. The input pin VDD33 current can be calculated from Table 11 based on the voltage, frequency, and load on all pad_sh and pad_mh pins. Use linear scaling to calculate pin currents for voltage, frequency, and load parameters that fall outside the values given in Table 11. Table 11. VDD33 Pad Average DC Current (TA = TL – TH) 1 Spec Pad Type Symbol Frequency (MHz) Load 2 (pF) VDD33 (V) VDDE (V) Drive Select Current (mA) Inputs 1 Slow I33_SH 66 0.5 3.6 5.5 NA 0.003 2 Medium I33_MH 66 0.5 3.6 5.5 NA 0.003 3 66 10 3.6 3.6 00 0.35 4 66 20 3.6 3.6 01 0.53 5 66 30 3.6 3.6 10 0.62 Outputs 6 66 50 3.6 3.6 11 0.79 7 66 10 3.6 1.98 00 0.35 8 66 20 3.6 1.98 01 0.44 9 66 30 3.6 1.98 10 0.53 10 66 50 3.6 1.98 11 0.70 11 56 10 3.6 3.6 00 0.30 12 56 20 3.6 3.6 01 0.45 13 56 30 3.6 3.6 10 0.52 14 56 50 3.6 3.6 11 0.67 56 10 3.6 1.98 00 0.30 16 56 20 3.6 1.98 01 0.37 17 56 30 3.6 1.98 10 0.45 15 Fast I33_FC 18 56 50 3.6 1.98 11 0.60 19 40 10 3.6 3.6 00 0.21 20 40 20 3.6 3.6 01 0.31 21 40 30 3.6 3.6 10 0.37 22 40 50 3.6 3.6 11 0.48 23 40 10 3.6 1.98 00 0.21 24 40 20 3.6 1.98 01 0.27 25 40 30 3.6 1.98 10 0.32 26 40 50 3.6 1.98 11 0.42 1 These values are estimated from simulation and not tested. Currents apply to output pins for the fast pads only and to input pins for the slow and medium pads only. 2 All loads are lumped. MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 19 Electrical Characteristics 3.9 Oscillator and FMPLL Electrical Characteristics Table 12. FMPLL Electrical Specifications (VDDSYN = 3.0–3.6 V; VSS = VSSSYN = 0.0 V; TA = TL to TH) Spec Characteristic Symbol Minimum Maximum 1 PLL reference frequency range: 1 Crystal reference External reference Dual controller (1:1 mode) fref_crystal fref_ext fref_1:1 8 8 24 20 20 fsys ÷ 2 2 System frequency 2 fsys fICO(MIN) ÷ 2RFD fMAX 3 MHz 3 System clock period tCYC — 1 ÷ fsys ns 4 Loss of reference frequency 4 fLOR 100 1000 kHz 5 Self-clocked mode (SCM) frequency 5 fSCM 7.4 17.5 MHz EXTAL input high voltage crystal mode 6 VIHEXT VXTAL + 0.4 V — V All other modes [dual controller (1:1), bypass, external reference] VIHEXT (VDDE5 ÷ 2) + 0.4 V — V EXTAL input low voltage crystal mode 7 VILEXT — VXTAL – 0.4 V V All other modes [dual controller (1:1), bypass, external reference] VILEXT — (VDDE5 ÷ 2) – 0.4 V V IXTAL 0.8 3 mA 6 7 Unit MHz 8 XTAL current 8 9 Total on-chip stray capacitance on XTAL CS_XTAL — 1.5 pF 10 Total on-chip stray capacitance on EXTAL CS_EXTAL — 1.5 pF 11 Crystal manufacturer’s recommended capacitive load CL Refer to crystal specification Refer to crystal specification pF Discrete load capacitance to connect to EXTAL CL_EXTAL — (2 × CL) – CS_EXTAL – CPCB_EXTAL 9 pF Discrete load capacitance to connect to XTAL CL_XTAL — (2 × CL) – CS_XTAL – CPCB_XTAL 9 pF tlpll — 750 μs tskew –2 2 ns 12 13 14 PLL lock time 10 15 Dual controller (1:1) clock skew (between CLKOUT and EXTAL) 11, 12 16 Duty cycle of reference tDC 40 60 % 17 Frequency unLOCK range fUL –4.0 4.0 % fSYS 18 Frequency LOCK range fLCK –2.0 2.0 % fSYS MPC5533 Microcontroller Data Sheet, Rev. 0.0 20 Freescale Semiconductor Electrical Characteristics Table 12. FMPLL Electrical Specifications (continued) (VDDSYN = 3.0–3.6 V; VSS = VSSSYN = 0.0 V; TA = TL to TH) Spec Characteristic Symbol Minimum Maximum CJITTER 19 CLKOUT period jitter, measured at fSYS max: 13, 14 Peak-to-peak jitter (clock edge to clock edge) Long term jitter (averaged over a 2 ms interval) 20 Frequency modulation range limit 15 (do not exceed fsys maximum) 21 ICO frequency fico = [ fref_crystal × (MFD + 4) ] ÷ (PREDIV + 1) 16 fico = [ fref_ext × (MFD + 4) ] ÷ (PREDIV + 1) 22 Predivider output frequency (to PLL) Unit — — 5.0 0.01 CMOD 0.8 2.4 %fSYS fico 48 8017 MHz fPREDIV 4 20 18 MHz % fCLKOUT 1 Nominal crystal and external reference values are worst-case not more than 1%. The device operates correctly if the frequency remains within ± 5% of the specification limit. This tolerance range allows for a slight frequency drift of the crystals over time. The designer must thoroughly understand the drift margin of the source clock. 2 All internal registers retain data at 0 Hz. 3 Up to the maximum frequency rating of the device (refer to Table 1). 4 Loss of reference frequency is defined as the reference frequency detected internally, which transitions the PLL into self-clocked mode. 5 The PLL operates at self-clocked mode (SCM) frequency when the reference frequency falls below f LOR. SCM frequency is measured on the CLKOUT ball with the divider set to divide-by-two of the system clock. NOTE: In SCM, the MFD and PREDIV have no effect and the RFD is bypassed. 6 Use the EXTAL input high voltage parameter when using the FlexCAN oscillator in crystal mode (no quartz crystals or resonators). (Vextal – Vxtal) must be ≥ 400 mV for the oscillator’s comparator to produce the output clock. 7 Use the EXTAL input low voltage parameter when using the FlexCAN oscillator in crystal mode (no quartz crystals or resonators). (Vxtal – Vextal) must be ≥ 400 mV for the oscillator’s comparator to produce the output clock. 8 I xtal is the oscillator bias current out of the XTAL pin with both EXTAL and XTAL pins grounded. 9 C PCB_EXTAL and CPCB_XTAL are the measured PCB stray capacitances on EXTAL and XTAL, respectively. 10 This specification applies to the period required for the PLL to relock after changing the MFD frequency control bits in the synthesizer control register (SYNCR). From power up with crystal oscillator reference, the lock time also includes the crystal startup time. 11 PLL is operating in 1:1 PLL mode. 12 V DDE = 3.0–3.6 V. 13 Jitter is the average deviation from the programmed frequency measured over the specified interval at maximum f . sys Measurements are made with the device powered by filtered supplies and clocked by a stable external clock signal. Noise injected into the PLL circuitry via VDDSYN and VSSSYN and variation in crystal oscillator frequency increase the jitter percentage for a given interval. CLKOUT divider is set to divide-by-two. 14 Values are with frequency modulation disabled. If frequency modulation is enabled, jitter is the sum of (jitter + Cmod). 15 Modulation depth selected must not result in f sys value greater than the fsys maximum specified value. RFD) sys = fico ÷ (2 16 f 17 The ICO frequency can be higher than the maximum allowable system frequency. For this case, set the FMPLL synthesizer control register reduced frequency divider (FMPLL_SYNCR[RFD]) to divide-by-two (RFD = 0b001). Therefore, for a 40 MHz maximum device (system frequency), program the FMPLL to generate 80 MHz at the ICO output and then divide-by-two the RFD to provide the 40 MHz clock. 18 Maximum value for dual controller (1:1) mode is (f MAX ÷ 2) with the predivider set to 1 (FMPLL_SYNCR[PREDIV] = 0b001). MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 21 Electrical Characteristics 3.10 eQADC Electrical Characteristics Table 13. eQADC Conversion Specifications (TA = TL to TH) Spec Characteristic Symbol Minimum Maximum Unit FADCLK 1 12 MHz 13 + 2 (15) 14 + 2 (16) 13 + 128 (141) 14 + 128 (142) 1 ADC clock (ADCLK) frequency 1 Conversion cycles Differential Single ended CC 2 3 Stop mode recovery time 2 TSR 10 — μs — 1.25 — mV 3 ADCLK cycles 4 Resolution 5 INL: 6 MHz ADC clock INL6 –4 4 Counts 3 6 INL: 12 MHz ADC clock INL12 –8 7 8 9 10 DNL: 6 MHz ADC clock DNL: 12 MHz ADC clock Offset error with calibration Full-scale gain error with calibration 7, 8, 9, 10 8 Counts DNL6 –3 4 34 Counts DNL12 –6 4 6 4 Counts OFFWC –4 5 4 5 Counts GAINWC –8 6 8 6 Counts IINJ –1 1 mA 11 Disruptive input injection current 12 Incremental error due to injection current. All channels are 10 kΩ < Rs <100 kΩ Channel under test has Rs = 10 kΩ, IINJ = IINJMAX, IINJMIN EINJ –4 4 Counts 13 Total unadjusted error (TUE) for single ended conversions with calibration 11, 12, 13, 14, 15 TUE –4 4 Counts 1 Conversion characteristics vary with FADCLK rate. Reduced conversion accuracy occurs at maximum FADCLK rate. The maximum value is based on 800 KS/s and the minimum value is based on 20 MHz oscillator clock frequency divided by a maximum 16 factor. 2 Stop mode recovery time begins when the ADC control register enable bits are set until the ADC is ready to perform conversions. 3 At V RH – VRL = 5.12 V, one least significant bit (LSB) = 1.25, mV = one count. 4 Guaranteed 10-bit mono tonicity. 5 The absolute value of the offset error without calibration ≤ 100 counts. 6 The absolute value of the full scale gain error without calibration ≤ 120 counts. 7 Below disruptive current conditions, the channel being stressed has conversion values of: 0x3FF for analog inputs greater than VRH, and 0x000 for values less than VRL. This assumes that VRH ≤ VDDA and VRL ≥ VSSA due to the presence of the sample amplifier. Other channels are not affected by non-disruptive conditions. 8 Exceeding the limit can cause a conversion error on both stressed and unstressed channels. Transitions within the limit do not affect device reliability or cause permanent damage. 9 Input must be current limited to the value specified. To determine the value of the required current-limiting resistor, calculate resistance values using VPOSCLAMP = VDDA + 0.5 V and VNEGCLAMP = – 0.3 V, then use the larger of the calculated values. 10 This condition applies to two adjacent pads on the internal pad. 11 The TUE specification is always less than the sum of the INL, DNL, offset, and gain errors due to canceling errors. 12 TUE does not apply to differential conversions. 13 Measured at 6 MHz ADC clock. TUE with a 12 MHz ADC clock is: –16 counts < TUE < 16 counts. 14 TUE includes all internal device errors such as internal reference variation (75% Ref, 25% Ref). 15 Depending on the input impedance, the analog input leakage current (Table 9. DC Electrical Specifications, spec 35a) can affect the actual TUE measured on analog channels AN[12], AN[13], AN[14], AN[15]. MPC5533 Microcontroller Data Sheet, Rev. 0.0 22 Freescale Semiconductor Electrical Characteristics 3.11 Spec Table 14. Flash Program and Erase Specifications (TA = TL to TH) Spec 3 1 2 3 4 5 6 H7Fb Flash Memory Electrical Characteristics Flash Program Characteristic Doubleword (64 bits) program time 4 Symbol Min. Typical 1 Initial Max. 2 Max. 3 Unit Tdwprogram — 10 — 500 μs 500 μs 4 Page program time 4 5 Tpprogram — 22 44 7 16 KB block pre-program and erase time T16kpperase — 325 525 5000 ms 9 48 KB block pre-program and erase time T48kpperase — 435 525 5000 ms 10 64 KB block pre-program and erase time T64kpperase — 525 675 5000 ms 8 128 KB block pre-program and erase time T128kpperase — 675 1800 7500 ms 11 Minimum operating frequency for program and erase operations 6 — 25 — — — MHz Typical program and erase times are calculated at 25 oC operating temperature using nominal supply values. Initial factory condition: ≤ 100 program/erase cycles, 25 oC, using a typical supply voltage measured at a minimum system frequency of 80 MHz. The maximum erase time occurs after the specified number of program/erase cycles. This maximum value is characterized but not guaranteed. Actual hardware programming times. This does not include software overhead. Page size is 128 bits (4 words). The read frequency of the flash can range up to the maximum operating frequency. There is no minimum read frequency condition. Table 15. Flash EEPROM Module Life (TA = TL to TH) Spec 1 Characteristic Symbol Min. Typical 1 Unit 1a Number of program/erase cycles per block for 16 KB, 48 KB, and 64 KB blocks over the operating temperature range (TJ) P/E 100,000 — cycles 1b Number of program/erase cycles per block for 128 KB blocks over the operating temperature range (TJ) P/E 1000 100,000 cycles 2 Data retention Blocks with 0–1,000 P/E cycles Blocks with 1,001–100,000 P/E cycles 20 5 — — years Retention Typical endurance is evaluated at 25o C. Product qualification is performed to the minimum specification. For additional information on the Freescale definition of typical endurance, refer to engineering bulletin EB619 Typical Endurance for Nonvolatile Memory. MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 23 Electrical Characteristics Table 16 shows the FLASH_BIU settings versus frequency of operation. Refer to the device reference manual for definitions of these bit fields. Table 16. FLASH_BIU Settings vs. Frequency of Operation1 Target Maximum Frequency (MHz) PFLIM 3 BFEN 2 0b0 0b1 0b000 to 0b010 0b0 0b1 0b0 0b1 0b0 0b1 0b000 to 0b010 0b0 0b1 0b01 0b0 0b1 0b0 0b1 0b000 to 0b010 0b0 0b1 0b011 0b01 0b0 0b1 0b0 0b1 0b000 to 0b010 0b0 0b1 0b111 0b11 0b0 0b0 0b000 0b0 DPFEN 2 APC RWSC WWSC Up to and including 27 MHz 4, 5 0b000 0b000 0b01 0b0 0b1 Up to and including 52 MHz 6 0b001 0b001 0b01 Up to and including 77 MHz 7 0b010 0b010 Up to and including 82 MHz 8 0b011 Reset values: 0b111 1 2 3 4 5 6 7 8 IPFEN 2 Illegal combinations exist. Use entries from the same row in this table. For maximum flash performance, set to 0b1. For maximum flash performance, set to 0b010. 27 MHz parts allow for 25 MHz system clock + 2% frequency modulation (FM). The APC, RWSC, and WWSC combination requires setting the PRD bit to 1 in the flash MCR register. 52 MHz parts allow for 50 MHz system clock + 2% FM. 77 MHz parts allow for 75 MHz system clock + 2% FM. 82 MHz parts allow for 80 MHz system clock + 2% FM. MPC5533 Microcontroller Data Sheet, Rev. 0.0 24 Freescale Semiconductor Electrical Characteristics 3.12 3.12.1 AC Specifications Pad AC Specifications Table 17. Pad AC Specifications (VDDEH = 5.0 V, VDDE = 1.8 V) 1 Spec SRC / DSC (binary) Pad 11 1 Slow high voltage (SH) 01 00 11 2 Medium high voltage (MH) 01 00 Out Delay 2, 3, 4 (ns) Rise / Fall 4, 5 (ns) Load Drive (pF) 26 15 50 82 60 200 75 40 50 137 80 200 377 200 50 476 260 200 16 8 50 43 30 200 34 15 50 61 35 200 192 100 50 239 125 200 2.7 10 2.5 20 2.4 30 2.3 50 00 3 01 Fast 10 3.1 11 1 2 3 4 5 4 Pullup/down (3.6 V max) — — 7500 50 5 Pullup/down (5.5 V max) — — 9000 50 These are worst-case values that are estimated from simulation (not tested). The values in the table are simulated at: VDD = 1.35–1.65 V; VDDE = 1.62–1.98 V; VDDEH = 4.5–5.25 V; VDD33 and VDDSYN = 3.0–3.6 V; and TA = TL to TH. This parameter is supplied for reference and is guaranteed by design (not tested). The output delay is shown in Figure 4. To calculate the output delay with respect to the system clock, add a maximum of one system clock to the output delay. The output delay and rise and fall are measured to 20% or 80% of the respective signal. This parameter is guaranteed by characterization rather than 100% tested. MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 25 Electrical Characteristics Table 18. Derated Pad AC Specifications (VDDEH = 3.3 V, VDDE = 3.3 V) 1 Spec SRC/DSC (binary) Pad 11 1 Slow high voltage (SH) 01 00 11 2 Medium high voltage (MH) 01 00 Out Delay 2, 3, 4 (ns) Rise / Fall 3, 5 (ns) Load Drive (pF) 39 23 50 120 87 200 101 52 50 188 111 200 507 248 50 597 312 200 23 12 50 64 44 200 50 22 50 90 50 200 261 123 50 305 156 200 2.4 10 2.2 20 2.1 30 2.1 50 00 3 01 Fast 10 3.2 11 1 2 3 4 5 4 Pullup/down (3.6 V max) — — 7500 50 5 Pullup/down (5.5 V max) — — 9500 50 These are worst-case values that are estimated from simulation (not tested). The values in the table are simulated at: VDD = 1.35–1.65 V; VDDE = 3.0–3.6 V; VDDEH = 3.0–3.6 V; VDD33 and VDDSYN = 3.0–3.6 V; and TA = TL to TH. This parameter is supplied for reference and guaranteed by design (not tested). The output delay, and the rise and fall, are calculated to 20% or 80% of the respective signal. The output delay is shown in Figure 4. To calculate the output delay with respect to the system clock, add a maximum of one system clock to the output delay. This parameter is guaranteed by characterization rather than 100% tested. MPC5533 Microcontroller Data Sheet, Rev. 0.0 26 Freescale Semiconductor Electrical Characteristics VDD ÷ 2 Pad internal data input signal Rising-edge out delay Falling-edge out delay VOH Pad output VOL Figure 4. Pad Output Delay 3.13 AC Timing 3.13.1 Reset and Configuration Pin Timing Table 19. Reset and Configuration Pin Timing 1 Spec 1 Characteristic Symbol Min. Max. Unit 1 RESET pulse width tRPW 10 — tCYC 2 RESET glitch detect pulse width tGPW 2 — tCYC 3 PLLCFG, BOOTCFG, WKPCFG, RSTCFG setup time to RSTOUT valid tRCSU 10 — tCYC 4 PLLCFG, BOOTCFG, WKPCFG, RSTCFG hold time from RSTOUT valid tRCH 0 — tCYC Reset timing specified at: VDDEH = 3.0–5.25 V and TA = TL to TH. MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 27 Electrical Characteristics 2 RESET 1 RSTOUT 3 PLLCFG BOOTCFG RSTCFG WKPCFG 4 Figure 5. Reset and Configuration Pin Timing 3.13.2 IEEE 1149.1 Interface Timing Table 20. JTAG Pin AC Electrical Characteristics 1 Spec 1 Characteristic Symbol Min. Max. Unit 1 TCK cycle time tJCYC 100 — ns 2 TCK clock pulse width (measured at VDDE ÷ 2) tJDC 40 60 ns 3 TCK rise and fall times (40% to 70%) tTCKRISE — 3 ns 4 TMS, TDI data setup time tTMSS, tTDIS 5 — ns 5 TMS, TDI data hold time tTMSH, tTDIH 25 — ns 6 TCK low to TDO data valid tTDOV — 20 ns 7 TCK low to TDO data invalid tTDOI 0 — ns 8 TCK low to TDO high impedance tTDOHZ — 20 ns 9 JCOMP assertion time tJCMPPW 100 — ns 10 JCOMP setup time to TCK low tJCMPS 40 — ns 11 TCK falling-edge to output valid tBSDV — 50 ns 12 TCK falling-edge to output valid out of high impedance tBSDVZ — 50 ns 13 TCK falling-edge to output high impedance (Hi-Z) tBSDHZ — 50 ns 14 Boundary scan input valid to TCK rising-edge tBSDST 50 — ns 15 TCK rising-edge to boundary scan input invalid tBSDHT 50 — ns These specifications apply to JTAG boundary scan only. JTAG timing specified at: VDDE = 3.0–3.6 V and TA = TL to TH. Refer to Table 21 for Nexus specifications. MPC5533 Microcontroller Data Sheet, Rev. 0.0 28 Freescale Semiconductor Electrical Characteristics TCK 2 3 2 1 3 Figure 6. JTAG Test Clock Input Timing TCK 4 5 TMS, TDI 6 7 8 TDO Figure 7. JTAG Test Access Port Timing MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 29 Electrical Characteristics TCK 10 JCOMP 9 Figure 8. JTAG JCOMP Timing MPC5533 Microcontroller Data Sheet, Rev. 0.0 30 Freescale Semiconductor Electrical Characteristics TCK 11 13 Output signals 12 Output signals 14 15 Input signals Figure 9. JTAG Boundary Scan Timing MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 31 Electrical Characteristics 3.13.3 Nexus Timing Table 21. Nexus Debug Port Timing 1 Spec Characteristic 1 MCKO cycle time 2 MCKO duty cycle 3 4 MCKO low to MDO data valid 3 MCKO low to MSEO data valid 3 3 Symbol Min. Max. Unit tMCYC 12 8 tCYC tMDC 40 60 % tMDOV –1.5 3.0 ns tMSEOV –1.5 3.0 ns tEVTOV –1.5 3.0 ns 5 MCKO low to EVTO data valid 6 EVTI pulse width tEVTIPW 4.0 — tTCYC 7 EVTO pulse width tEVTOPW 1 4 9 TCK duty cycle tTDC 40 60 % 10 TDI, TMS data setup time tNTDIS, tNTMSS 8 — ns 11 TDI, TMS data hold time tNTDIH, tNTMSH 5 — ns 0 12 ns 0 10 ns — — — 13 3 5 tCYC tTCYC tJOV VDDE = 2.25–3.0 V VDDE = 3.0–3.6 V 4 — TCK cycle time 12 2 tMCYC 8 TCK low to TDO data valid 1 — 4 RDY valid to MCKO 5 — JTAG specifications apply when used for debug functionality. All Nexus timing relative to MCKO is measured from 50% of MCKO and 50% of the respective signal. Nexus timing specified at VDD = 1.35–1.65 V, VDDE = 2.25–3.6 V, VDD33 and VDDSYN = 3.0–3.6 V, TA = TL to TH, and CL = 30 pF with DSC = 0b10. The Nexus AUX port runs up to 82 MHz. MDO, MSEO, and EVTO data is held valid until the next MCKO low cycle occurs. Limit the maximum frequency to approximately 16 MHz (VDDE = 2.25–3.0 V) or 20 MHz (VDDE = 3.0–3.6 V) to meet the timing specification for tJOV of [0.2 x tJCYC] as outlined in the IEEE-ISTO 5001-2003 specification. The RDY pin timing is asynchronous to MCKO and is guaranteed by design to function correctly. 1 2 MCKO 4 3 5 MDO MSEO EVTO Output Data Valid Figure 10. Nexus Output Timing MPC5533 Microcontroller Data Sheet, Rev. 0.0 32 Freescale Semiconductor Electrical Characteristics TCK 10 11 TMS, TDI 12 TDO Figure 11. Nexus TDI, TMS, TDO Timing MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 33 Electrical Characteristics 3.13.4 External Bus Interface (EBI) Timing Table 22 lists the timing information for the external bus interface (EBI). Table 22. External Bus Operation Timing1, 2 Spec Characteristic and Description 1 CLKOUT period 2 CLKOUT duty cycle 3 4 CLKOUT rise time CLKOUT fall time CLKOUT positive edge to output signal invalid or Hi-Z (hold time) External Bus Frequency 3 Symbol 20 MHz 33 MHz 40 MHz Unit Notes Signals are measured at 50% VDDE. Min. Max Min. Max Min. Max TC 24.4 — 17.5 — 14.9 — ns tCDC 45% 55% 45% 55% 45% 55% TC tCRT — tCFT — tCOH 1.06 4 — 4 — — — — 4 — 1.06 ns — 4 ns — ns — — 1.06 EBTS = 0 — — 1.5 — 4 1.5 1.5 EBTS = 1 External bus interface CS[0:3] 5 ADDR[8:31] 5 DATA[0:15] RD_WR BDIP WE/BE[0:1] OE TS TA CLKOUT positive edge to output signal valid (output delay) Hold time selectable via SIU_ECCR [EBTS] bit. 10.06 tCOV 10.06 — — 11.0 10.06 11.0 EBTS = 0 ns — 11.0 EBTS = 1 Output valid time selectable via SIU_ECCR [EBTS] bit. External bus interface CS[0:3] 5 ADDR[8:31] 6 DATA[0:15] RD_WR BDIP WE/BE[0:1] OE TS TA MPC5533 Microcontroller Data Sheet, Rev. 0.0 34 Freescale Semiconductor Electrical Characteristics Table 22. External Bus Operation Timing1, 2 (continued) External Bus Frequency 3 Characteristic and Description Spec 20 MHz Symbol 33 MHz 40 MHz Notes Unit Min. Max Min. Max Min. Max tCIS 10.0 — 10.0 — 10.0 — ns tCIH 1.0 — 1.0 — 1.0 — ns Input signal valid to CLKOUT positive edge (setup time) 75 External bus interface ADDR[8:31] DATA[0:15] RD_WR TS TA CLKOUT positive edge to input signal invalid (hold time) 85 1 2 3 4 5 6 External bus interface ADDR[8:31] DATA[0:15] RD_WR TS TA EBI timing specified at VDDE = 1.6–3.6 V (unless stated otherwise), TA = TL to TH, and CL = 30 pF with DSC = 0b10. The external bus is limited to half the speed of the internal bus. Speed is the nominal maximum frequency. Max speed is the maximum speed allowed including frequency modulation (FM). 42 MHz parts allow for 40 MHz system clock + 2% FM; 68 MHz parts allow for a 66 MHz system clock + 2% FM, and 82 MHz parts allow for 80 MHz system clock + 2% FM. Refer to fast pad timing in Table 17 and Table 18 (different values for 1.8 V and 3.3 V). Available on the 324 package only; not available on the 208 package. EBTS = 0 timings are tested and valid at VDDE = 2.25–3.6 V only; EBTS = 1 timings are tested and valid at VDDE = 1.6–3.6 V. 3.13.5 External Interrupt Timing (IRQ Signals) Table 23. External Interrupt Timing 1 Spec Characteristic 1 IRQ pulse-width low 2 IRQ pulse-width high 3 IRQ edge-to-edge time 2 Symbol Min. Max. Unit tIPWL 3 — tCYC TIPWH 3 — tCYC tICYC 6 — tCYC 1 IRQ timing specified at: VDDEH = 3.0–5.25 V and TA = TL to TH. 2 Applies when IRQ signals are configured for rising-edge or falling-edge events, but not both. MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 35 Electrical Characteristics IRQ 2 1 3 Figure 12. External Interrupt Timing 3.13.6 eTPU Timing Table 24. eTPU Timing 1 Spec 1 2 1 2 Characteristic eTPU input channel pulse width eTPU output channel pulse width Symbol Min. Max Unit tICPW 4 — tCYC — tCYC tOCPW 2 2 eTPU timing specified at: VDDEH = 3.0–5.25 V and TA = TL to TH. This specification does not include the rise and fall times. When calculating the minimum eTPU pulse width, include the rise and fall times defined in the slew rate control fields (SRC) of the pad configuration registers (PCR). 2 eTPU output eTPU input and TCRCLK 1 Figure 13. eTPU Timing MPC5533 Microcontroller Data Sheet, Rev. 0.0 36 Freescale Semiconductor Electrical Characteristics 3.13.7 DSPI Timing Table 25. DSPI Timing 1, 2 40 MHz Spec 1 2 3 4 5 6 7 Characteristic 66 MHz 80 MHz Symbol Unit Min. Max Min. Max Min. Max 1 SCK cycle time 3, 4 tSCK 48.8 ns 5.8 ms 28.4 ns 3.5 ms 24.4 ns 2.9 ms — 2 5 tCSC 46 — 26 — 22 — ns PCS to SCK delay 6 3 After SCK delay tASC 45 — 25 — 21 — ns 4 SCK duty cycle tSDC (tSCK ÷ 2) – 2 ns (tSCK ÷ 2) + 2 ns (tSCK ÷ 2) – 2 ns (tSCK ÷ 2) + 2 ns (tSCK ÷ 2) – 2 ns (tSCK ÷ 2) + 2 ns ns 5 Slave access time (SS active to SOUT driven) tA — 25 — 25 — 25 ns 6 Slave SOUT disable time (SS inactive to SOUT Hi-Z, or invalid) tDIS — 25 — 25 — 25 ns 7 PCSx to PCSS time tPCSC 4 — 4 — 4 — ns 8 PCSS to PCSx time tPASC 5 — 5 — 5 — ns tSUI 9 Data setup time for inputs Master (MTFE = 0) Slave Master (MTFE = 1, CPHA = 0)7 Master (MTFE = 1, CPHA = 1) 20 2 –4 20 — — — — 20 2 6 20 — — — — 20 2 8 20 — — — — ns ns ns ns tHI 10 Data hold time for inputs Master (MTFE = 0) Slave Master (MTFE = 1, CPHA = 0)7 Master (MTFE = 1, CPHA = 1) –4 7 45 –4 — — — — –4 7 25 –4 — — — — –4 7 21 –4 — — — — ns ns ns ns tSUO 11 Data valid (after SCK edge) Master (MTFE = 0) Slave Master (MTFE = 1, CPHA = 0) Master (MTFE = 1, CPHA = 1) — — — — 5 25 45 5 — — — — 5 25 25 5 — — — — 5 25 21 5 ns ns ns ns tHO 12 Data hold time for outputs Master (MTFE = 0) Slave Master (MTFE = 1, CPHA = 0) Master (MTFE = 1, CPHA = 1) –5 5.5 8 –5 — — — — –5 5.5 4 –5 — — — — –5 5.5 3 –5 — — — — ns ns ns ns All DSPI timing specifications use the fastest slew rate (SRC = 0b11) on pad type M or MH. DSPI signals using pad types of S or SH have an additional delay based on the slew rate. DSPI timing is specified at VDDEH = 3.0–5.25 V, TA = TL to TH, and CL = 50 pF with SRC = 0b11. Speed is the nominal maximum frequency. Max speed is the maximum speed allowed including frequency modulation (FM). 42 MHz parts allow for 40 MHz system clock + 2% FM; 68 MHz parts allow for a 66 MHz system clock + 2% FM, and 82 MHz parts allow for 80 MHz system clock + 2% FM. The minimum SCK cycle time restricts the baud rate selection for the given system clock rate. These numbers are calculated based on two MPC55xx devices communicating over a DSPI link. The actual minimum SCK cycle time is limited by pad performance. The maximum value is programmable in DSPI_CTARx[PSSCK] and DSPI_CTARx[CSSCK]. The maximum value is programmable in DSPI_CTARx[PASC] and DSPI_CTARx[ASC]. This number is calculated using the SMPL_PT field in DSPI_MCR set to 0b10. MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 37 Electrical Characteristics 2 3 PCSx 1 4 SCK output (CPOL=0) 4 SCK output (CPOL=1) 9 SIN 10 First data Last data Data 12 SOUT First data 11 Data Last data Figure 14. DSPI Classic SPI Timing—Master, CPHA = 0 PCSx SCK output (CPOL=0) 10 SCK output (CPOL=1) 9 SIN Data First data 12 SOUT First data Last data 11 Data Last data Figure 15. DSPI Classic SPI Timing—Master, CPHA = 1 MPC5533 Microcontroller Data Sheet, Rev. 0.0 38 Freescale Semiconductor Electrical Characteristics 3 2 SS 1 4 SCK input (CPOL=0) 4 SCK input (CPOL=1) 5 First data SOUT 9 6 Data Last data Data Last data 10 First data SIN 11 12 Figure 16. DSPI Classic SPI Timing—Slave, CPHA = 0 SS SCK input (CPOL=0) SCK input (CPOL=1) 11 5 12 SOUT First data 9 SIN Data Last data Data Last data 6 10 First data Figure 17. DSPI Classic SPI Timing—Slave, CPHA = 1 MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 39 Electrical Characteristics 3 PCSx 4 1 2 SCK output (CPOL=0) 4 SCK output (CPOL=1) 9 SIN 10 First data Last data Data 12 SOUT 11 First data Last data Data Figure 18. DSPI Modified Transfer Format Timing—Master, CPHA = 0 PCSx SCK output (CPOL=0) SCK output (CPOL=1) 10 9 SIN First data Data 12 SOUT First data Data Last data 11 Last data Figure 19. DSPI Modified Transfer Format Timing—Master, CPHA = 1 MPC5533 Microcontroller Data Sheet, Rev. 0.0 40 Freescale Semiconductor Electrical Characteristics 3 2 SS 1 SCK input (CPOL=0) 4 4 SCK input (CPOL=1) 12 11 5 First data SOUT Data Last data 10 9 Data First data SIN 6 Last data Figure 20. DSPI Modified Transfer Format Timing—Slave, CPHA = 0 SS SCK input (CPOL=0) SCK input (CPOL=1) 11 5 6 12 First data SOUT 9 Last data Data Last data 10 First data SIN Data Figure 21. DSPI Modified Transfer Format Timing—Slave, CPHA = 1 7 8 PCSS PCSx Figure 22. DSPI PCS Strobe (PCSS) Timing MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 41 Electrical Characteristics 3.13.8 eQADC SSI Timing Table 26. EQADC SSI Timing Characteristics Spec Rating Symbol Minimum Typical Maximum Unit tFCK 2 — 17 tSYS_CLK 2 FCK period (tFCK = 1 ÷ fFCK) 1, 2 3 Clock (FCK) high time tFCKHT tSYS_CLK − 6.5 — 9 × (tSYS_CLK + 6.5) ns 4 Clock (FCK) low time tFCKLT tSYS_CLK − 6.5 — 8 × (tSYS_CLK + 6.5) ns 5 SDS lead / lag time tSDS_LL –7.5 — +7.5 ns 6 SDO lead / lag time tSDO_LL –7.5 — +7.5 ns 7 EQADC data setup time (inputs) tEQ_SU 22 — — ns 8 EQADC data hold time (inputs) tEQ_HO 1 — — ns 1 SS timing specified at VDDEH = 3.0–5.25 V, TA = TL to TH, and CL = 25 pF with SRC = 0b11. Maximum operating frequency varies depending on track delays, master pad delays, and slave pad delays. 2 FCK duty cycle is not 50% when it is generated through the division of the system clock by an odd number. 2 3 4 FCK 5 4 SDS 25th 6 SDO 1st (MSB) 5 2nd 26th External device data sample at FCK falling-edge 8 7 SDI 1st (MSB) 2nd 25th 26th EQADC data sample at FCK rising-edge Figure 23. EQADC SSI Timing MPC5533 Microcontroller Data Sheet, Rev. 0.0 42 Freescale Semiconductor Mechanicals 4 Mechanicals 4.1 MPC5533 208 MAP BGA Pinout Figure 24 is a pinout for the MPC5533 208 MAP BGA package. NOTES VDDEH10 and VDDEH6 are connected internally on the 208-ball package and are listed as VDDEH6. The MPC5500 devices are pin compatible for software portability and use the primary function names to label the pins in the BGA diagram. Although some devices do not support all the primary functions shown in the BGA diagram, the muxed and GPIO signals on those pins remain available. See the signals chapter in the device reference manual for the signal muxing. 1 2 3 4 A VSS AN9 AN11 B VDD VSS AN38 AN21 C VSTBY VDD VSS D VDD33 AN39 5 6 7 8 9 10 11 12 13 AN1 AN5 VRH VRL AN27 VSSA0 AN12 MDO2 MDO0 VDD33 VSS A AN0 AN4 REF BYPC AN22 AN25 AN28 VDDA0 AN13 MDO3 MDO1 VSS VDD B AN17 AN34 AN16 AN3 AN7 AN23 AN32 AN33 AN14 AN15 VSS MSEO0 TCK C VDD VSS AN18 AN2 AN6 AN24 AN30 AN31 AN35 VDDEH 9 VSS TMS EVTO TEST D AN37 VDD VDDE7 TDI EVTI AN36 VDDEH 6 TDO VDDA1 VSSA1 14 15 16 E ETPUA ETPUA 30 31 F ETPUA ETPUA ETPUA 28 29 26 G ETPUA ETPUA ETPUA ETPUA 24 27 25 21 VSS VSS VSS VSS SOUTB PCSB3 H ETPUA ETPUA ETPUA ETPUA 18 23 22 17 VSS VSS VSS VSS PCSA3 PCSB4 PCSB2 PCSB1 H J ETPUA ETPUA ETPUA ETPUA 14 20 19 13 VSS VSS VSS VSS PCSB5 TXDA PCSA2 SCKB J K ETPUA ETPUA ETPUA VDDEH 1 16 15 7 VSS VSS VSS VSS CNTXC RXDA RSTOUT L ETPUA ETPUA ETPUA TCRCLK 12 11 6 A TXDB CNRXC M ETPUA ETPUA ETPUA ETPUA 10 9 1 5 RXDB PLL CFG0 BOOT CFG1 N ETPUA ETPUA ETPUA 8 4 0 VSS VDD VDD33 EMIOS EMIOS VDDEH EMIOS EMIOS VDD33 4 12 2 10 21 VSS VRC CTL PLL CFG1 P ETPUA ETPUA 3 2 VSS VDD GPIO 207 VDDE2 EMIOS EMIOS EMIOS EMIOS EMIOS CNTXA 16 17 6 8 22 VDD VSS VRC33 XTAL P GPIO 206 EMIOS EMIOS EMIOS EMIOS EMIOS EMIOS EMIOS CNRXA CNRXB 14 19 23 4 3 9 11 VDD VSS VDD SYN R EMIOS EMIOS EMIOS EMIOS EMIOS EMIOS EMIOS EMIOS CNTXB VDDE5 15 18 20 0 1 5 7 13 ENG CLK VDD VSS T 14 15 16 R CS0 VSS VDD T VSS VDD OE 1 2 3 4 5 6 7 8 9 10 11 12 13 MSEO1 E MCKO JCOMP F SINB WKP CFG PCSB0 G VPP K RESET L VSS SYN M EXTAL N Figure 24. MPC5533 208 Package MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 43 Mechanicals 4.2 MPC5533 324 PBGA Pinout Figure 25 is a pinout for the MPC5533 324 PBGA package. NOTE The MPC5500 devices are pin compatible for software portability and use the primary function names to label the pins in the BGA diagram. Although some devices do not support all the primary functions shown in the BGA diagram, the muxed and GPIO signals on those pins remain available. See the signals chapter in the device reference manual for the signal muxing. A 1 2 3 4 5 VSS VDD VSTBY AN37 AN11 B VDD33 VSS 6 7 VDDA1 VSSA1 8 9 10 11 12 13 14 15 16 17 18 19 20 21 AN1 AN5 VRH VRL AN27 AN28 AN35 VSSA0 AN12 MDO11 MDO10 MDO8 VDD VDD33 AN0 AN4 REF BYPC AN23 AN26 AN31 AN32 VSSA0 AN13 MDO9 MDO7 MDO4 MDO0 VSS VDDA0 22 VSS A VDD AN36 AN39 AN19 AN16 VSS VDD AN8 AN17 AN20 AN21 AN3 AN7 AN22 AN25 AN30 AN33 AN14 MDO5 MDO2 MDO1 VSS VDDE7 VDD C VSS VDD AN38 AN9 AN10 AN18 AN2 AN6 AN24 AN29 AN34 VDDEH AN15 9 MDO6 MDO3 C ETPUA ETPUA 30 31 D ETPUA ETPUA ETPUA 28 29 26 VDDE7 B VSS VDDE7 TCK TDI D ETPUA ETPUA ETPUA ETPUA E 24 27 25 21 VDDE7 TMS TDO TEST E ETPUA ETPUA ETPUA ETPUA F 23 22 17 18 VDDE7 JCOMP EVTI EVTO F ETPUA ETPUA ETPUA ETPUA G 20 19 14 13 RDY MCKO MSEO0 MSEO1 G VDDEH GPIO 10 203 ETPUA ETPUA ETPUA VDDEH H 16 15 10 1 GPIO 204 SINB H ETPUA ETPUA ETPUA ETPUA J 6 9 12 11 VSS VSS VSS VSS VSS VDDE7 SOUTB PCSB3 PCSB0 PCSB1 J ETPUA ETPUA ETPUA ETPUA K 5 8 7 2 VSS VSS VSS VSS VSS VSS PCSA3 PCSB4 SCKB PCSB2 K ETPUA ETPUA ETPUA ETPUA L 1 4 3 0 VSS VSS VSS VSS VSS VSS PCSB5 SOUTA M TCRCLK BDIP A N CS3 P ADDR 16 R ADDR 18 CS2 CS1 WE1 WE0 ADDR RD_WR VDD33 17 ADDR VDDE2 19 TA ADDR T 20 ADDR 21 ADDR 12 TS ADDR U 22 ADDR 23 ADDR 13 ADDR 14 ADDR V 24 ADDR 25 ADDR 15 ADDR 31 ADDR ADDR W VDDE2 30 26 ADDR Y 28 ADDR AA 29 AB VDDE2 VDDE2 CS0 ADDR 27 VSS VSS VSS VSS VSS VSS PCSA1 PCSA0 PCSA2 VSS VDDE2 VSS VSS VSS PCSA4 TXDA PCSA5 VFLASH N VSS VSS VDDE2 VSS VSS VSS CNTXC RXDA RSTOUT RXDB NC No connect. Reserved (W18 & Y19 are shorted to each other) VDDE2 VDD33 VDDE2 DATA 11 DATA 12 DATA 14 EMIOS EMIOS VDDEH EMIOS EMIOS VDDE5 21 4 12 2 8 DATA 13 DATA 15 EMIOS EMIOS EMIOS EMIOS EMIOS CNTXA VDDE5 22 17 10 15 6 DATA 8 DATA 9 DATA 10 GPIO 207 DATA 5 DATA 7 VDD VDDE2 VDD VDDE2 DATA 1 VDDE2 GPIO 206 DATA 2 DATA 3 DATA 4 DATA 6 OE 5 6 7 8 9 VSS VSS VDD VDDE2 DATA 0 1 2 3 4 NC VPP RST CFG M P CNRXC TXDB RESET R BOOT CFG1 VRC VSS VSS SYN T VDDEH PLL 6 CFG1 BOOT CFG0 EXTAL U VRC CTL PLL CFG0 XTAL V VDD SYN W VDD VDD SCKA L VSS WKP CFG Note: SINA VSS VDD VRC33 NC VSS VDD VDD33 Y VDDE2 EMIOS EMIOS EMIOS EMIOS EMIOS EMIOS EMIOS CNRXA VDDE5 CLKOUT VSS 23 19 16 3 5 9 13 VDD AA EMIOS EMIOS EMIOS EMIOS EMIOS EMIOS EMIOS EMIOS CNTXB CNRXB VDDE5 20 18 14 0 1 4 7 11 ENG CLK VSS AB 21 22 10 11 12 13 14 15 16 17 18 19 20 Figure 25. MPC5533 324 Package MPC5533 Microcontroller Data Sheet, Rev. 0.0 44 Freescale Semiconductor Mechanicals 4.3 MPC5533 208-Pin Package Dimensions The package drawings of the MPC5533 208-pin MAP BGA are shown in Figure 26. Figure 26. MPC5533 208-Pin Package MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 45 Mechanicals Figure 26. MPC5533 208 MAP BGA Package (continued) MPC5533 Microcontroller Data Sheet, Rev. 0.0 46 Freescale Semiconductor Mechanicals 4.4 MPC5533 324-Pin Package Dimensions The package drawings of the MPC5533 324-pin TEPBGA package are shown in Figure 27. Figure 27. MPC5533 324 TEPBGA Package MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 47 Mechanicals Figure 27. MPC5533 324 TEPBGA Package (continued) MPC5533 Microcontroller Data Sheet, Rev. 0.0 48 Freescale Semiconductor Revision History for the MPC5533 Data Sheet 5 Revision History for the MPC5533 Data Sheet Table 27 provides a revision history of the MPC5533 Data Sheet. Table 27. Revision History for the MPC5533 Data Sheet Substantive Change(s) Initial version for MPC5533. Version Rev. 0.0 MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 49 How to Reach Us: Home Page: www.freescale.com E-mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1-800-521-6274 or +1-480-768-2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo 153-0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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