FREESCALE MRF21180R6

Freescale Semiconductor
Technical Data
Document Number: MRF21180
Rev. 6, 5/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
MRF21180R6
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
• Typical 2 - Carrier W - CDMA Performance for VDD = 28 Volts,
IDQ = 1700 mA, f1 = 2135 MHz, f2 = 2145 MHz,
Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over
3.84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz. Distortion Products
Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz,
Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Output Power — 38 Watts (Avg.)
Power Gain — 12.1 dB
Efficiency — 22%
IM3 — 37.5 dBc
ACPR — - 41 dBc
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 170 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency, and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
2110 - 2170 MHz, 170 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
380
2.17
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
0.46
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Class
1 (Minimum)
M3 (Minimum)
MRF21180R6
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage (3)
(VDS = 28 Vdc, ID = 1700 mAdc)
VGS(Q)
3
3.9
5
Vdc
Drain- Source On - Voltage (1)
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.18
0.22
Vdc
Forward Transconductance (1)
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
6
—
S
Crss
—
3.6
—
pF
Characteristic
Off Characteristics
(1)
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 μAdc)
On Characteristics
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system)
2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. Each carrier has Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Common- Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 1700 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
Gps
11
12.1
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 1700 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
η
19
22
—
%
IM3
—
- 37.5
- 35
dBc
ACPR
—
- 41
- 39
dBc
IRL
—
- 12
-9
dB
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 1700 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 - 10 MHz
and f2 +10 MHz)
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 1700 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 - 5 MHz
and f2 +5 MHz.)
Input Return Loss
(VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 1700 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push - pull configuration.
(continued)
MRF21180R6
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Two - Tone Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 170 W, IDQ = 1700 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Gps
—
12
—
dB
Two - Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 170 W, IDQ = 1700 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
η
—
33
—
%
Two - Tone Intermodulation Distortion
(VDD = 28 Vdc, Pout = 170 W, IDQ = 1700 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IMD
—
- 30
—
dBc
Two - Tone Input Return Loss
(VDD = 28 Vdc, Pout = 170 W, IDQ = 1700 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IRL
—
- 12
—
dB
P1dB
—
180
—
W
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) (continued)
Pout, 1 dB Compression Point
(VDD = 28 Vdc, IDQ = 1700 mA, f = 2170 MHz)
1. Measurement made with device in push - pull configuration.
MRF21180R6
RF Device Data
Freescale Semiconductor
3
VGG
VDD
R3
+
R1
B1
C8
C9
C14
C18
+
+
C19
C21
Z13
+
C23
C15
C11
C5
Z9
RF
INPUT
Z3
C1
Z5
Z15
C4
Z17
RF
OUTPUT
Z7
R5
Z1
Z11
DUT
Z2
Z19
Z4
C2
VGG
Z6
Z10
R4
R2
Z20
Z8
B2
Z12
Z16
C3
Z18
Z14
+
C24
C16
C12
VDD
C6
+
C7
C10
C13
C17
+
+
C20
C22
Figure 1. MRF21180 Test Circuit Schematic
Table 5. MRF21180 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Short Ferrite Beads
2743019447
Fair Rite
C1, C2, C3, C4
30 pF Chip Capacitors
100B300JCA500X
ATC
C5, C6, C7, C8
5.6 pF Chip Capacitors
100B5R6JCA500X
ATC
C9, C10
10 μF Tantalum Capacitors
T495X106K035AS4394
Kemet
C11, C12, C13, C14
1000 pF Chip Capacitors
100B102JCA500X
ATC
C15, C16, C17, C18
0.1 μF Chip Capacitors
CDR33BX104AKWS
Kemet
C19, C20
1.0 μF Tantalum Capacitors
T491C105M050
Kemet
C21, C22, C23, C24
22 μF Tantalum Capacitors
T491X226K035AS4394
Kemet
N1, N2
Type N Flange Mounts
3052-1648-10
Omni Spectra
R1, R2, R3, R4
10 Ω, 1/8 W Chip Resistors
R5
1.0 kΩ, 1/8 W Chip Resistor
Z1, Z20
Microstrip
0.790″ x 0.065″
Z2, Z19
Microstrip
0.830″ x 0.112″
Z3, Z18
Microstrip
0.145″ x 0.065″
Z4, Z17
Microstrip
1.700″ x 0.065″
Z5, Z6
Microstrip
0.340″ x 0.065″
Z7, Z8
Microstrip
0.455″ x 0.600″
Z9, Z10
Microstrip
0.980″ x 0.035″
Z11, Z12
Microstrip
0.510″ x 0.645″
Z13, Z14
Microstrip
0.770″ x 0.058″
Z15, Z16
Microstrip
0.280″ x 0.065″
WB1, WB2, WB3, WB4
Wear Blocks
Board
0.030″ Glass Teflon®
RF-35, εr = 3.50
Taconic
PCB
Etched Circuit Boards
MRF21180 Rev. 4
CMR
MRF21180R6
4
RF Device Data
Freescale Semiconductor
C19
C21
C14
C15C11
R4
B1
C18
R3
C5
C8 C10
C22
C1
C2
WB4
C4
WB3
R5
C3
WB1
WB2
C23
C6
B1
R1
C20
C7 C9
R2
C17
C16 C12
C13
MRF21180
Rev. 4
C24
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF21180 Test Circuit Component Layout
MRF21180R6
RF Device Data
Freescale Semiconductor
5
−40
15
−45
Gps
10
−50
IM3
5
−55
ACPR
η
0
−60
10
1
50
35
−40
30
−45
25
3rd Order
−50
20
5th Order
−55
15
η
−60
VDD = 28 Vdc, IDQ = 1700 mA
f1 = 2135 MHz, f2 = 2145 MHz
7th Order
−65
10
100
10
5
220
Figure 3. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency versus
Output Power
Figure 4. Intermodulation Distortion Products
versus Output Power
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
−35
IDQ = 1300 mA
−40
1500 mA
−45
2100 mA
VDD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
1900 mA
1700 mA
−50
10
100
220
24
IRL
22
20
−9
η
−14
18
16
−24
−29
14
−34
IM3
12
−39
Gps
ACPR
10
2090
2110
2130
2150
2170
f, FREQUENCY (MHz)
Figure 5. Intermodulation Distortion versus
Output Power
Figure 6. 2 - Carrier W - CDMA Broadband
Performance
48
−44
2190
38
−25
η
Gps
37
40
11.5
32
11
24
10.5
16
VDD = 28 Vdc
IDQ = 1700 mA
f = 2140 MHz
η
9.5
1
−19
VDD = 28 Vdc, Pout = 38 W (Avg.)
IDQ = 1700 mA
f1 = f − 5 MHz, f2 = f + 5 MHz
2−Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
Pout, OUTPUT POWER (WATTS) PEP
12.5
G ps , POWER GAIN (dB)
−35
Pout, OUTPUT POWER (WATTS) PEP
−30
10
40
Pout, OUTPUT POWER (WATTS Avg.) W−CDMA
−25
12
−30
10
100
−26
IMD
36
−27
35
−28
34
−29
33
8
32
0
220
31
η, DRAIN EFFICIENCY (%)
20
45
IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB)
−35
IM3 (dBc), ACPR (dBc)
25
−25
−30
Pout = 170 W (PEP)
IDQ = 1700 mA
f1 = 2135 MHz, f2 = 2145 MHz
−31
−32
24
25
26
27
28
IMD, INTERMODULATION DISTORTION (dBc)
−30
VDD = 28 Vdc, IDQ = 1700 mA
f1 = 2135 MHz, f2 = 2145 MHz
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
IMD, INTERMODULATION DISTORTION (dBc)
30
η, DRAIN EFFICIENCY (%)
η, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
29
Pout, OUTPUT POWER (WATTS)
VDD, DRAIN SUPPLY (V)
Figure 7. CW Performance
Figure 8. Two - Tone Intermodulation Distortion
and Drain Efficiency versus Drain Supply
MRF21180R6
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G ps , POWER GAIN (dB)
12.5
IDQ = 2100 mA
1900 mA
12.25
12
1700 mA
1500 mA
11.75
1300 mA
11.5
11.25
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
11
10
220
100
Pout, OUTPUT POWER (WATTS) PEP
35
−8
η
30
−13
IRL
25
20
−18
VDD = 28 Vdc
Pout = 170 W (PEP)
IDQ (ICQ) = 1700 mA
f1 = f − 5 MHz, f2 = f + 5 MHz
−23
15
−28
IMD
Gps
10
2090
2110
2130
2150
−33
2190
2170
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
G ps , POWER GAIN (dB),η, DRAIN EFFICIENCY (%)
Figure 9. Two-Tone Power Gain versus
Output Power
f, FREQUENCY (MHz)
−25
+20
3.84 MHz
Channel BW
+30
−30
3rd Order
−35
VDD = 28 Vdc
Pout = 170 W (PEP)
IDQ = 1700 mA
f1 = 2140 MHz − Df/2, f2 = 2140 MHz + Df/2
−40
0
−10
(dB)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 10. Two-Tone Broadband Performance
−30
−40
5th Order
−45
−20
−50
7th Order
−50
−60
−70
−55
0.1
1
10
Df, TONE SEPARATION (MHz)
Figure 11. Intermodulation Distortion
Products versus Two - Tone Spacing
20
−ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
−IM3 in
3.84 MHz BW
−80
−25 −20
−15
−10
−5
0
5
10
+IM3 in
3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Figure 12. 2-Carrier W-CDMA Spectrum
MRF21180R6
RF Device Data
Freescale Semiconductor
7
f = 2170 MHz
Zsource
f = 2110 MHz
f = 2170 MHz
Zo = 5 Ω
Zload
f = 2110 MHz
VDD = 28 Vdc, IDQ = 1700 mA, Pout = 38 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2110
2.45 + j2.08
2.65 + j1.52
2140
2.39 + j2.51
2.71 + j1.80
2170
2.16 + j3.14
2.64 + j2.04
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
−
−
Z
source
Output
Matching
Network
+
Z
load
Figure 13. Series Equivalent Source and Load Impedance
MRF21180R6
8
RF Device Data
Freescale Semiconductor
NOTES
MRF21180R6
RF Device Data
Freescale Semiconductor
9
NOTES
MRF21180R6
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
2X
bbb
G 4
1
2
3
4
T A
B
M
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.52 (38.61) BASED ON M3 SCREW.
B
(FLANGE)
4X
K
M
B
L
4X
Q
A
A
D
aaa
M
T A
M
B
M
ccc
ccc
M
T A
M
B
M
T A
M
B
M
R
M
(LID)
N
(LID)
F
H
C
E
PIN 5
M
(INSULATOR)
bbb
M
T A
M
B
S
T
SEATING
PLANE
(INSULATOR)
bbb
M
T A
M
M
B
M
DIM
A
B
C
D
E
F
G
H
K
L
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.615
1.625
0.395
0.405
0.150
0.200
0.455
0.465
0.062
0.066
0.004
0.007
1.400 BSC
0.082
0.090
0.117
0.137
0.540 BSC
1.219
1.241
1.218
1.242
0.120
0.130
0.355
0.365
0.365
0.375
0.013 REF
0.010 REF
0.020 REF
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
41.02
41.28
10.03
10.29
3.81
5.08
11.56
11.81
1.57
1.68
0.10
0.18
35.56 BSC
2.08
2.29
2.97
3.48
13.72 BSC
30.96
31.52
30.94
31.55
3.05
3.30
9.01
9.27
9.27
9.53
0.33 REF
0.25 REF
0.51 REF
DRAIN
DRAIN
GATE
GATE
SOURCE
CASE 375D - 05
ISSUE E
NI - 1230
MRF21180R6
RF Device Data
Freescale Semiconductor
11
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF21180R6
Document Number: MRF21180
Rev. 6, 5/2006
12
RF Device Data
Freescale Semiconductor