Freescale Semiconductor Technical Data Document Number: MRF19085 Rev. 8, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19085LR3 MRF19085LSR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 26 Volts, IDQ = 850 mA, Pout = 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 Khz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power — 18 Watts Avg. Power Gain — 13.0 dB Efficiency — 23% ACPR — - 51 dB IM3 — - 36.5 dBc • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. 1930- 1990 MHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF19085LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF19085LSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 273 1.56 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit RθJC 0.79 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum) 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF19085LR3 MRF19085LSR3 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 850 mAdc) VGS(Q) 2.5 3.5 4.5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.18 0.210 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs — 6 — S Crss — 3.6 — pF Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) On Characteristics (DC) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Common- Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Gps 12 13 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) η 21 23 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured over 1.2288 MHz bandwidth @ f1 - 2.5 MHz and f2 = +2.5 MHz) IMD — - 36.5 - 35 dBc Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR measured over 30 kHz bandwidth @ f1 - 885 MHz and f2 =+885 MHz) ACPR — - 51 - 48 dBc IRL — - 12 -9 dB Input Return Loss (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) 1. Part is internally matched both on input and output. (continued) MRF19085LR3 MRF19085LSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Gps — 13 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) η — 36 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IMD — - 31 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IRL — - 12 — dB P1dB — 90 — W Functional Tests (In Freescale Test Fixture) Pout, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 850 mA, f = 1990 MHz) MRF19085LR3 MRF19085LSR3 RF Device Data Freescale Semiconductor 3 VBIAS R3 R1 VSUPPLY B1 + R2 + C5 C4 C3 C2 C7 Z4 RF INPUT Z1 Z2 C8 + C9 C10 + C11 C12 Z9 Z3 C1 L1 Z5 Z6 Z7 RF OUTPUT Z8 C6 DUT Figure 1. 1930 - 1990 MHz 2 - Carrier N - CDMA Test Circuit Schematic Table 5. 1930 - 1990 MHz 2 - Carrier N - CDMA Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Short Ferrite Bead 2743019447 Fair Rite C1 51 pF Chip Capacitor 100B510JCA500X ATC C2, C7 5.1 pF Chip Capacitors 100B5R1JCA500X ATC C3, C9 1000 pF Chip Capacitors 100B102JCA500X ATC C4, C10 0.1 μF Chip Capacitors CDR33BX104AKWS Kemet C5 0.1 μF Tantalum Surface Mount Capacitor T491C105M050 Kemet C6 10 pF Chip Capacitor 100B100JCA500X ATC C8 10 μF Tantalum Surface Mount Capacitor T495X106K035AS4394 Kemet C11, C12 22 μF Tantalum Surface Mount Capacitors T491X226K035AS4394 Kemet L1 1 Turn, 20 AWG, 0.100″ ID N1, N2 Type N Flange Mounts 3052-1648-10 Omni Spectra R1 1.0 kΩ, 1/8 W Chip Resistor R2 220 kΩ, 1/8 W Chip Resistor R3 10 Ω, 1/8 W Chip Resistor Z1 Microstrip 0.750″ x 0.0840″ Z2 Microstrip 1.090″ x 0.0840″ Z3 Microstrip 0.400″ x 1.400″ Z4 Microstrip 0.520″ x 0.050″ Z5 Microstrip 0.540″ x 1.133″ Z6 Microstrip 0.400″ x 0.140″ Z7 Microstrip 0.555″ x 0.0840″ Z8 Microstrip 0.720″ x 0.0840″ Z9 Microstrip 0.560″ x 0.070″ Board 0.030″ Glass Teflon® GX-0300-55-22, εr = 2.55 Keene PCB Etched Circuit Boards MRF19085 Rev. 4 CMR MRF19085LR3 MRF19085LSR3 4 RF Device Data Freescale Semiconductor C8 C2 C7 R1 B1 C5 C1 C4 R3 C9 C10 C3 CUT OUT AREA R2 L1 C11 C12 C6 MRF19085 Rev.4 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1930 - 1990 MHz 2 - Carrier N - CDMA Test Circuit Component Layout MRF19085LR3 MRF19085LSR3 RF Device Data Freescale Semiconductor 5 1.2288 MHz Channel BW −10 −20 −IM3 in 1.2288 MHz Integrated BW −30 +IM3 in 1.2288 MHz Integrated BW (dB) −40 −50 −60 −70 −ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW −80 −90 −100 −7.5 VDD = 26 Vdc, IDQ = 850 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 @ 0.01% Probability (CCDF) 25 −35 −42 20 IM3 −49 15 G ps 10 −56 η −63 5 ACPR −70 0 0.5 1 10 30 Pout, OUTPUT POWER (WATTS Avg.) N−CDMA −6 −4.5 −3 −1.5 0 1.5 3 4.5 6 Figure 4. 2-Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 7.5 f, FREQUENCY (MHz) 50 −20 VDD = 26 Vdc IDQ = 850 mA f1 = 1960 MHz 100 kHz Tone Spacing −30 40 30 −40 η 3rd Order −50 20 5th Order 10 −60 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) Figure 3. 2-Carrier N-CDMA Spectrum η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) −28 30 IM3 (dBc), ACPR (dBc) 0 η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS −20 VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing −25 −30 IDQ = 550 mA −35 700 mA −40 −45 1150 mA 1000 mA −50 7th Order 850 mA Figure 6. Third Order Intermodulation Distortion versus Output Power and IDQ 22 IRL −10 −20 VDD = 26 V Pout = 18 W Avg. IDQ = 850 mA −30 IM3 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 @ 0.01% Probability (CCDF) 14 −40 ACPR G ps 12 1930 1940 1950 1960 1970 1980 −50 −60 1990 P in , INPUT POWER (WATTS), G ps , POWER GAIN (dB) Figure 5. Intermodulation Distortion Products versus Output Power 0 16 100 Pout, OUTPUT POWER (WATTS) PEP η 18 10 Pout, OUTPUT POWER (WATTS) PEP 24 20 4 14 54 G ps 12 47 VDD = 26 V IDQ = 850 mA f = 1960 MHz 10 40 8 33 6 26 η 4 19 2 12 P in 0 2 5 100 140 10 f, FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS) Figure 7. 2-Carrier N-CDMA Broadband Performance Figure 8. CW Performance MRF19085LR3 MRF19085LSR3 6 RF Device Data Freescale Semiconductor η, DRAIN EFFICIENCY (%) 10 IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 4 −55 0 100 −70 TYPICAL CHARACTERISTICS −27 37 −28 IMD 36 −29 35 −30 34 −31 33 24.0 24.5 25.0 25.5 26.0 26.5 27.0 27.5 IDQ = 1150 mA 13.5 1000 mA 850 mA 13.0 700 mA 12.5 550 mA VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing 12.0 11.5 −32 28.0 4 10 VDD, DRAIN SUPPLY (V) 100 Pout, OUTPUT POWER (WATTS) Figure 9. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply Figure 10. Two-Tone Power Gain versus Output Power 40 −5 η 35 −10 IRL 30 −15 VDD = 26 Vdc Pout = 90 W (PEP) IDQ = 850 mA 100 kHz Tone Spacing 25 20 −20 −25 IMD 15 −30 Gps 10 1920 1930 1940 1950 1960 1970 1980 1990 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) η G ps , POWER GAIN (dB),η, DRAIN EFFICIENCY (%) η, DRAIN EFFICIENCY (%) 38 14.0 G ps , POWER GAIN (dB) −26 IDQ = 850 mA f = 1960 MHz 100 kHz Tone Spacing IMD, INTERMODULATION DISTORTION (dBc) 39 −35 2000 f, FREQUENCY (MHz) Figure 11. Two-Tone Broadband Performance MRF19085LR3 MRF19085LSR3 RF Device Data Freescale Semiconductor 7 Zo = 5 Ω Zload f = 1990 MHz f = 1930 MHz f = 1990 MHz Zsource f = 1930 MHz VDD = 26 V, IDQ = 850 mA, Pout = 18 W Avg. f MHz Zsource Ω Zload Ω 1930 0.75 - j2.50 1.05 - j1.95 1960 0.70 - j2.40 1.10 - j1.85 1990 0.65 - j2.35 1.05 - j1.75 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF19085LR3 MRF19085LSR3 8 RF Device Data Freescale Semiconductor NOTES MRF19085LR3 MRF19085LSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF19085LR3 MRF19085LSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 3 B K 2 (FLANGE) D bbb M T A M B M M R (INSULATOR) bbb N M T A M B M ccc M T A M M aaa M T A M B S (LID) ccc H (LID) M T A M B M (INSULATOR) B M C F E A T A CASE 465 - 06 ISSUE G NI - 780 MRF19085LR3 SEATING PLANE (FLANGE) 4X U (FLANGE) 1 K 2X 2 B (FLANGE) D bbb M T A M B M N M R (LID) ccc M T A M B M ccc M T A M M B M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M E A A (FLANGE) MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE H C 3 INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B DIM A B C D E F G H K M N Q R S aaa bbb ccc F T SEATING PLANE CASE 465A - 06 ISSUE H NI - 780S MRF19085LSR3 MRF19085LR3 MRF19085LSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF19085LR3 MRF19085LSR3 Document Number: MRF19085 Rev. 8, 5/2006 12 RF Device Data Freescale Semiconductor