Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 17, 5/2006 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN - PCS/cellular radio and wireless local loop. • Specified Two - Tone Performance @ 2000 MHz, 26 Volts Output Power = 30 Watts PEP Power Gain = 9 dB Efficiency = 30% Intermodulation Distortion = - 29 dBc • Typical Single - Tone Performance at 2000 MHz, 26 Volts Output Power = 30 Watts CW Power Gain = 9.5 dB Efficiency = 45% • Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW Output Power Features • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. 2000 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 360B - 05, STYLE 1 NI - 360 MRF284LR1 CASE 360C - 05, STYLE 1 NI - 360S MRF284LSR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS ± 20 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 87.5 0.5 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 2.0 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0) IDSS — — 1.0 μAdc Gate - Source Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS — — 10 μAdc Off Characteristics Drain - Source Breakdown Voltage (VGS = 0, ID = 10 μAdc) (continued) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF284LR1 MRF284LSR1 1 Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 μAdc) VGS(th) 2.0 3.0 4.0 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 200 mAdc) VGS(q) 3.0 4.0 5.0 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.0 Adc) VDS(on) — 0.3 0.6 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1.0 Adc) gfs — 1.5 — S Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Ciss — 43 — pF Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Coss — 23 — pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Crss — 1.4 — pF Common - Source Power Gain (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Gps 9 10.5 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) η 30 35 — % Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IMD — - 32 - 29 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IRL — - 15 -9 dB Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Gps 9 10.4 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) η — 35 — % Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IMD — - 34 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IRL — - 15 -9 dB Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA, f1 = 2000.0 MHz) Gps 8.5 9.5 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA, f1 = 2000.0 MHz) η 35 45 — % On Characteristics Dynamic Characteristics Functional Tests (in Freescale Test Fixture, 50 ohm system) MRF284LR1 MRF284LSR1 2 RF Device Data Freescale Semiconductor R1 VGG R2 W1 + R3 B1 B2 C6 C4 C3 R4 C7 C15 R5 R6 R7 B3 W2 C12 W3 C14 C13 Z10 Z1 Z2 C1 Z3 C2 Z4 C5 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z5 Z6 + + C17 L2 L1 RF INPUT VDD Z7 Z8 C10 Z11 Z12 C9 DUT Z9 Z13 C18 L3 Z14 Z15 Z16 Z17 RF OUTPUT C16 C11 C8 0.530″ x 0.080″ Microstrip 0.255″ x 0.080″ Microstrip 0.600″ x 0.080″ Microstrip 0.525″ x 0.080″ Microstrip 0.015″ x 0.325″ Microstrip 0.085″ x 0.325″ Microstrip 0.165″ x 0.325″ Microstrip 0.110″ x 0.515″ Microstrip 0.095″ x 0.515″ Microstrip 0.050″ x 0.515″ Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB 0.155″ x 0.515″ Microstrip 0.120″ x 0.325″ Microstrip 0.150″ x 0.325″ Microstrip 0.010″ x 0.325″ Microstrip 0.505″ x 0.080″ Microstrip 0.865″ x 0.080″ Microstrip 0.525″ x 0.080″ Microstrip Arlon GX0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. 1930 - 2000 MHz Broadband Test Circuit Schematic Table 4. 1930 - 2000 MHz Broadband Test Circuit Component Designations and Values Designators Description B1 - B3 Ferrite Beads, Round, Ferroxcube #56 - 590 - 65 - 3B C1, C2, C8 0.8 - 8.0 pF Gigatrim Variable Capacitors, Johanson #27291SL C3, C17 22 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394 C4, C14 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS C5 220 pF Chip Capacitor, ATC #100B221KP500X C6, C12 1000 pF Chip Capacitors, ATC #100B102JCA50X C7, C13 5.1 pF Chip Capacitors, ATC #100B5R1CCA500X C9 1.2 pF Chip Capacitor, ATC #100B1R2CCA500X C10 2.7 pF Chip Capacitor, ATC #100B2R7CCA500X C11 0.6 - 4.5 pF Gigatrim Variable Capacitors, Johanson #27271SL C15, C16 200 pF Chip Capacitors, ATC #100B201KP500X C18 10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394 L1, L2 4 Turns, #24 AWG, 0.120″ OD, 0.140″ Long, (12.5 nH), Coilcraft #A04T - 5 L3 2 Turns, #24 AWG, 0.120″ OD, 0.140″ Long, (5.0 nH), Coilcraft #A02T - 5 R1, R2, R3, R5, R6, R7 12 Ω, 1/4 W Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B120JT R4 560 kΩ, 1/4 W Chip Resistor, 0.08″ x 0.13″ W1, W2, W3 Solid Copper Buss Wire, 16 AWG WS1, WS2 Beryllium Copper Wear Blocks 0.005″ x 0.250″ x 0.250″ MRF284LR1 MRF284LSR1 RF Device Data Freescale Semiconductor 3 C12 C6 C4 R2 R1 W3 W2 W1 R6 B1 R3 C17 R7 B3 R4 B2 C3 R5 C7 C13 C18 C15 L1 C9 L2 WS1 L3 C10 C5 C1 C14 C16 WS2 C11 C2 C8 MRF284 Rev - 0 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1930 - 2000 MHz Broadband Test Circuit Component Layout MRF284LR1 MRF284LSR1 4 RF Device Data Freescale Semiconductor VSUPPLY + R1 C1 R3 VDD P1 VDD B3 B4 B5 R9 R10 R11 C15 B2 B1 + Q1 R4 R2 Q2 R6 R5 + C9 C7 R7 C8 R8 C11 C2 C13 C10 C16 C4 L4 L1 RF INPUT Z1 L3 Z2 Z3 Z4 Z5 Z6 Z10 Z7 Z8 Z9 Z11 Z12 Z13 DUT Z14 Z15 Z16 RF OUTPUT C14 C12 C17 C3 L2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 C5 0.363″ x 0.080″ Microstrip 0.080″ x 0.080″ Microstrip 0.916″ x 0.080″ Microstrip 0.517″ x 0.080″ Microstrip 0.050″ x 0.325″ Microstrip 0.050″ x 0.325″ Microstrip 0.071″ x 0.325″ Microstrip 0.125″ x 0.325″ Microstrip 0.210″ x 0.515″ Microstrip C6 Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB 0.210″ x 0.515″ Microstrip 0.235″ x 0.325″ Microstrip 0.02″ x 0.325″ Microstrip 0.02″ x 0.325″ Microstrip 0.510″ x 0.080″ Microstrip 0.990″ x 0.080″ Microstrip 0.390″ x 0.080″ Microstrip Arlon GX0300 - 55 - 22, 0.030″, εr = 2.55 Figure 3. 2000 MHz Class A Test Circuit Schematic MRF284LR1 MRF284LSR1 RF Device Data Freescale Semiconductor 5 Table 5. 2000 MHz Class A Test Circuit Component Designations and Values Designators Description B1 - B5 Ferrite Beads, Round, Ferroxcube # 56 - 590 - 65 - 3B C1, C9, C16 100 μF, 50 V Electrolytic Capacitors, Mallory #SME50VB101M12X25L C2, C13 51 pF Chip Capacitors, ATC #100B510JCA500x C3, C14 10 pF Chip Capacitors, ATC #100B100JCA500X C4, C11 12 pF Chip Capacitors, ATC #100B120JCA500X C5 0.8 - 8.0 pF Variable Capacitor, Johansen Gigatrim #27291SL C6 4.7 pF Chip Capacitor, ATC #100B4R7CCA500X C7, C15 91 pF Chip Capacitors, ATC #100B910KP500X C8 1000 pF Chip Capacitor, ATC #100B102JCA50X C10 0.1 μF Chip Capacitor, Kemet #CDR33BX104AKWS C12, C17 0.6 - 4.5 pF Variable Capacitors, Johansen Gigatrim #27271SL L1 4 Turns, #27 AWG, 0.087″ OD, 0.050″ ID, 0.069″ Long, 10 nH L2 5 Turns, #24 AWG, 0.083″ OD, 0.040″ ID, 0.128″ Long, 12.5 nH L3, L4 9 Turns, #26 AWG, 0.080″ OD, 0.046″ ID, 0.170″ Long, 30.8 nH P1 1000 Ω Potentiometer, 1/2 W, 10 Turns, Bourns Q1 Transistor, NPN, #MJD31, Case 369A - 10 Q2 Transistor, PNP, #MJD32, Case 369A - 10 R1 360 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B361JT R2 2 x 12 kΩ, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B122JT R3 1 Ω, Wirewound, 5 W, 3% Resistor, Dale # RE60G1R00 R4 4 x 6.8 kΩ, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B682JT R5 2 x 1500 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B152JT R6 270 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B271JT R7 - R11 12 Ω, Fixed Film Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B120JT MRF284LR1 MRF284LSR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 14 45 35 13 40 30 12 25 11 Gps 15 9 8 10 VDD = 26 Vdc IDQ = 200 mA f = 2000 MHz Single Tone 5 0 1.0 0.5 3.5 2W 30 25 Pin = 1 W 20 VDD = 26 Vdc IDQ = 200 mA Single Tone 15 7 3.0 1.5 2.5 2.0 Pin, INPUT POWER (WATTS) 3W 35 6 4.0 10 1800 1820 1840 1860 1880 1900 1920 1940 1960 1980 2000 f, FREQUENCY (MHz) Figure 5. Output Power versus Frequency −20 12 VDD = 26 Vdc IDQ = 200 mA −30 f = 2000.0 MHz 1 f2 = 2000.1 MHz −40 11 −50 3rd Order 5th Order −60 −70 −80 −15 10 −20 9 −25 7th Order −30 8 Pout = 30 W (PEP) IDQ = 200 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 7 6 16 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 0.1 −10 Gps G ps , GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) Figure 4. Output Power & Power Gain versus Input Power 18 −20 −30 20 22 24 VDD, DRAIN SUPPLY VOLTAGE (Vdc) 26 −35 −40 28 Figure 7. Power Gain and Intermodulation Distortion versus Supply Voltage 13 VDD = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz IDQ = 400 mA 12 G ps , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) Figure 6. Intermodulation Distortion Products versus Output Power IMD IMD, INTERMODULATION DISTORTION (dBc) 10 20 0 4W Pout , OUTPUT POWER (WATTS) Pout G ps , GAIN (dB) Pout , OUTPUT POWER (WATTS) 40 100 mA 300 mA 200 mA 11 −40 300 mA 10 200 mA −50 9 IDQ = 400 mA −60 0.1 1.0 10 VDD = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 100 mA 8 0.1 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 8. Intermodulation Distortion versus Output Power Figure 9. Power Gain versus Output Power MRF284LR1 MRF284LSR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 3 100 Ciss Tflange = 100°C C, CAPACITANCE (pF) 2 1 Coss 10 TJ = 175°C Crss 0 8 12 16 20 24 1 28 0 VDD, DRAIN SUPPLY VOLTAGE (Vdc) 8 12 16 20 24 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 28 Figure 11. Capacitance versus Drain Source Voltage 45 11 Gps 10 FUNDAMENTAL 40 9 Gps, GAIN (dB) 60 50 40 30 20 10 0 −10 −20 −30 −40 −50 −60 −70 −80 −90 3rd Order 8 7 η VDD = 26 Vdc Pout = 30 W (PEP), IDQ = 200 mA Two−Tone Frequency Delta = 100 kHz 35 30 6 0 5 10 15 20 25 30 35 40 Pin, INPUT POWER (dBm) 45 50 55 Figure 12. Class A Third Order Intercept Point −36 5 4 VSWR 3 60 1920 1940 1960 f, FREQUENCY (MHz) 3.0 −32 IMD VDD = 26 Vdc IDQ = 1.8 Adc f1 = 2000.0 MHz f2 = 2000.1 MHz 1980 −40 2000 2.0 1.0 Figure 13. 1920 - 2000 MHz Broadband Circuit Performance 1.E+10 MTTF FACTOR (HOURS x AMPS 2) Pout , OUTPUT POWER (dBm) Figure 10. DC Safe Operating Area 4 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 0 50 100 150 200 TJ, JUNCTION TEMPERATURE (°C) 250 This graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperature have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 14. MTTF Factor versus Junction Temperature MRF284LR1 MRF284LSR1 8 RF Device Data Freescale Semiconductor INPUT VSWR 4 EFFICIENCY (%) 0 INTERMODULATION DISTORTION (dBc) ID, DRAIN CURRENT (Adc) Tflange = 75°C 1800 MHz 1800 MHz Zload f = 2000 MHz Zsource Zo = 5 Ω f = 2000 MHz VCC = 26 V, IDQ = 200 mA, Pout = 15 W Avg. f MHz Zsource Ω 1800 1.0 - j0.4 2.1 + j0.4 1860 1.0 - j0.8 2.2 - j0.2 1900 1.0 - j1.1 2.3 - j0.5 1960 1.0 - j1.4 2.5 - j0.9 2000 1.0 - j2.3 2.6 - j0.92 Zload Ω Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedence MRF284LR1 MRF284LSR1 RF Device Data Freescale Semiconductor 9 NOTES MRF284LR1 MRF284LSR1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS Q aaa 2X G B M T A M B M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 1 3 B (FLANGE) 2 D bbb M T A K 2X 2X M B R M (LID) ccc N ccc (LID) T A M M B M T A M B M F H M C E S (INSULATOR) T M bbb (INSULATOR) A aaa SEATING PLANE M T A M B M T A M M INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE M CASE 360B - 05 ISSUE G NI - 360 MRF284LR1 A B DIM A B C D E F G H K M N Q R S aaa bbb ccc A A (FLANGE) B 1 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 2 B (FLANGE) 2X D bbb M T A M 2X K B M R (LID) ccc M T A M N (LID) ccc T A M B M F H M B M E C S (INSULATOR) PIN 3 T M (INSULATOR) bbb M T A M B SEATING PLANE M aaa M T A M B CASE 360C - 05 ISSUE E NI - 360S MRF284LSR1 M DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.375 0.385 0.225 0.235 0.105 0.155 0.210 0.220 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.355 0.365 0.357 0.363 0.227 0.23 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 9.53 9.78 5.72 5.97 2.67 3.94 5.33 5.59 0.89 1.14 0.10 0.15 1.45 1.70 2.16 2.92 9.02 9.27 9.07 9.22 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF284LR1 MRF284LSR1 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF284LR1 MRF284LSR1 Document Number: MRF284 Rev. 17, 5/2006 12 RF Device Data Freescale Semiconductor