FREESCALE MRF284LSR1

Freescale Semiconductor
Technical Data
Document Number: MRF284
Rev. 17, 5/2006
RF Power Field Effect Transistors
MRF284LR1
MRF284LSR1
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in Class A and Class AB for PCN - PCS/cellular radio
and wireless local loop.
• Specified Two - Tone Performance @ 2000 MHz, 26 Volts
Output Power = 30 Watts PEP
Power Gain = 9 dB
Efficiency = 30%
Intermodulation Distortion = - 29 dBc
• Typical Single - Tone Performance at 2000 MHz, 26 Volts
Output Power = 30 Watts CW
Power Gain = 9.5 dB
Efficiency = 45%
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW
Output Power
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
2000 MHz, 30 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B - 05, STYLE 1
NI - 360
MRF284LR1
CASE 360C - 05, STYLE 1
NI - 360S
MRF284LSR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
± 20
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
87.5
0.5
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
2.0
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0)
IDSS
—
—
1.0
μAdc
Gate - Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
—
—
10
μAdc
Off Characteristics
Drain - Source Breakdown Voltage
(VGS = 0, ID = 10 μAdc)
(continued)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF284LR1 MRF284LSR1
1
Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 150 μAdc)
VGS(th)
2.0
3.0
4.0
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 200 mAdc)
VGS(q)
3.0
4.0
5.0
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1.0 Adc)
VDS(on)
—
0.3
0.6
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1.0 Adc)
gfs
—
1.5
—
S
Input Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
—
43
—
pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Coss
—
23
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Crss
—
1.4
—
pF
Common - Source Power Gain
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Gps
9
10.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η
30
35
—
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD
—
- 32
- 29
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL
—
- 15
-9
dB
Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Gps
9
10.4
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
η
—
35
—
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD
—
- 34
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL
—
- 15
-9
dB
Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,
f1 = 2000.0 MHz)
Gps
8.5
9.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,
f1 = 2000.0 MHz)
η
35
45
—
%
On Characteristics
Dynamic Characteristics
Functional Tests (in Freescale Test Fixture, 50 ohm system)
MRF284LR1 MRF284LSR1
2
RF Device Data
Freescale Semiconductor
R1
VGG
R2
W1
+
R3
B1
B2
C6
C4
C3
R4
C7
C15
R5
R6
R7
B3
W2
C12
W3
C14
C13
Z10
Z1
Z2
C1
Z3
C2
Z4
C5
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z5
Z6
+
+
C17
L2
L1
RF
INPUT
VDD
Z7
Z8
C10
Z11
Z12
C9
DUT
Z9
Z13
C18
L3
Z14
Z15
Z16
Z17
RF
OUTPUT
C16
C11
C8
0.530″ x 0.080″ Microstrip
0.255″ x 0.080″ Microstrip
0.600″ x 0.080″ Microstrip
0.525″ x 0.080″ Microstrip
0.015″ x 0.325″ Microstrip
0.085″ x 0.325″ Microstrip
0.165″ x 0.325″ Microstrip
0.110″ x 0.515″ Microstrip
0.095″ x 0.515″ Microstrip
0.050″ x 0.515″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
0.155″ x 0.515″ Microstrip
0.120″ x 0.325″ Microstrip
0.150″ x 0.325″ Microstrip
0.010″ x 0.325″ Microstrip
0.505″ x 0.080″ Microstrip
0.865″ x 0.080″ Microstrip
0.525″ x 0.080″ Microstrip
Arlon GX0300 - 55 - 22, 0.030″,
εr = 2.55
Figure 1. 1930 - 2000 MHz Broadband Test Circuit Schematic
Table 4. 1930 - 2000 MHz Broadband Test Circuit Component Designations and Values
Designators
Description
B1 - B3
Ferrite Beads, Round, Ferroxcube #56 - 590 - 65 - 3B
C1, C2, C8
0.8 - 8.0 pF Gigatrim Variable Capacitors, Johanson #27291SL
C3, C17
22 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394
C4, C14
0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS
C5
220 pF Chip Capacitor, ATC #100B221KP500X
C6, C12
1000 pF Chip Capacitors, ATC #100B102JCA50X
C7, C13
5.1 pF Chip Capacitors, ATC #100B5R1CCA500X
C9
1.2 pF Chip Capacitor, ATC #100B1R2CCA500X
C10
2.7 pF Chip Capacitor, ATC #100B2R7CCA500X
C11
0.6 - 4.5 pF Gigatrim Variable Capacitors, Johanson #27271SL
C15, C16
200 pF Chip Capacitors, ATC #100B201KP500X
C18
10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394
L1, L2
4 Turns, #24 AWG, 0.120″ OD, 0.140″ Long, (12.5 nH), Coilcraft #A04T - 5
L3
2 Turns, #24 AWG, 0.120″ OD, 0.140″ Long, (5.0 nH), Coilcraft #A02T - 5
R1, R2, R3, R5, R6, R7
12 Ω, 1/4 W Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B120JT
R4
560 kΩ, 1/4 W Chip Resistor, 0.08″ x 0.13″
W1, W2, W3
Solid Copper Buss Wire, 16 AWG
WS1, WS2
Beryllium Copper Wear Blocks 0.005″ x 0.250″ x 0.250″
MRF284LR1 MRF284LSR1
RF Device Data
Freescale Semiconductor
3
C12
C6
C4
R2
R1
W3
W2
W1
R6
B1
R3
C17
R7
B3
R4
B2
C3
R5
C7
C13
C18
C15
L1
C9
L2
WS1
L3
C10
C5
C1
C14
C16
WS2
C11
C2
C8
MRF284
Rev - 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 1930 - 2000 MHz Broadband Test Circuit Component Layout
MRF284LR1 MRF284LSR1
4
RF Device Data
Freescale Semiconductor
VSUPPLY
+
R1
C1
R3
VDD
P1
VDD
B3
B4
B5
R9
R10
R11
C15
B2
B1
+
Q1
R4
R2
Q2
R6
R5
+
C9
C7 R7
C8
R8
C11
C2
C13
C10
C16
C4
L4
L1
RF
INPUT
Z1
L3
Z2
Z3
Z4
Z5
Z6
Z10
Z7
Z8
Z9
Z11
Z12
Z13
DUT
Z14
Z15
Z16
RF
OUTPUT
C14
C12
C17
C3
L2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
C5
0.363″ x 0.080″ Microstrip
0.080″ x 0.080″ Microstrip
0.916″ x 0.080″ Microstrip
0.517″ x 0.080″ Microstrip
0.050″ x 0.325″ Microstrip
0.050″ x 0.325″ Microstrip
0.071″ x 0.325″ Microstrip
0.125″ x 0.325″ Microstrip
0.210″ x 0.515″ Microstrip
C6
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.210″ x 0.515″ Microstrip
0.235″ x 0.325″ Microstrip
0.02″ x 0.325″ Microstrip
0.02″ x 0.325″ Microstrip
0.510″ x 0.080″ Microstrip
0.990″ x 0.080″ Microstrip
0.390″ x 0.080″ Microstrip
Arlon GX0300 - 55 - 22, 0.030″,
εr = 2.55
Figure 3. 2000 MHz Class A Test Circuit Schematic
MRF284LR1 MRF284LSR1
RF Device Data
Freescale Semiconductor
5
Table 5. 2000 MHz Class A Test Circuit Component Designations and Values
Designators
Description
B1 - B5
Ferrite Beads, Round, Ferroxcube # 56 - 590 - 65 - 3B
C1, C9, C16
100 μF, 50 V Electrolytic Capacitors, Mallory #SME50VB101M12X25L
C2, C13
51 pF Chip Capacitors, ATC #100B510JCA500x
C3, C14
10 pF Chip Capacitors, ATC #100B100JCA500X
C4, C11
12 pF Chip Capacitors, ATC #100B120JCA500X
C5
0.8 - 8.0 pF Variable Capacitor, Johansen Gigatrim #27291SL
C6
4.7 pF Chip Capacitor, ATC #100B4R7CCA500X
C7, C15
91 pF Chip Capacitors, ATC #100B910KP500X
C8
1000 pF Chip Capacitor, ATC #100B102JCA50X
C10
0.1 μF Chip Capacitor, Kemet #CDR33BX104AKWS
C12, C17
0.6 - 4.5 pF Variable Capacitors, Johansen Gigatrim #27271SL
L1
4 Turns, #27 AWG, 0.087″ OD, 0.050″ ID, 0.069″ Long, 10 nH
L2
5 Turns, #24 AWG, 0.083″ OD, 0.040″ ID, 0.128″ Long, 12.5 nH
L3, L4
9 Turns, #26 AWG, 0.080″ OD, 0.046″ ID, 0.170″ Long, 30.8 nH
P1
1000 Ω Potentiometer, 1/2 W, 10 Turns, Bourns
Q1
Transistor, NPN, #MJD31, Case 369A - 10
Q2
Transistor, PNP, #MJD32, Case 369A - 10
R1
360 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B361JT
R2
2 x 12 kΩ, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B122JT
R3
1 Ω, Wirewound, 5 W, 3% Resistor, Dale # RE60G1R00
R4
4 x 6.8 kΩ, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B682JT
R5
2 x 1500 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B152JT
R6
270 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″, Garrett Instruments #RM73B2B271JT
R7 - R11
12 Ω, Fixed Film Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B120JT
MRF284LR1 MRF284LSR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
14
45
35
13
40
30
12
25
11
Gps
15
9
8
10
VDD = 26 Vdc
IDQ = 200 mA
f = 2000 MHz Single Tone
5
0
1.0
0.5
3.5
2W
30
25
Pin = 1 W
20
VDD = 26 Vdc
IDQ = 200 mA
Single Tone
15
7
3.0
1.5
2.5
2.0
Pin, INPUT POWER (WATTS)
3W
35
6
4.0
10
1800 1820 1840 1860 1880 1900 1920 1940 1960 1980 2000
f, FREQUENCY (MHz)
Figure 5. Output Power versus Frequency
−20
12
VDD = 26 Vdc
IDQ = 200 mA
−30 f = 2000.0 MHz
1
f2 = 2000.1 MHz
−40
11
−50
3rd Order
5th Order
−60
−70
−80
−15
10
−20
9
−25
7th Order
−30
8
Pout = 30 W (PEP)
IDQ = 200 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
7
6
16
1.0
10
Pout, OUTPUT POWER (WATTS) PEP
0.1
−10
Gps
G ps , GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Output Power & Power Gain
versus Input Power
18
−20
−30
20
22
24
VDD, DRAIN SUPPLY VOLTAGE (Vdc)
26
−35
−40
28
Figure 7. Power Gain and Intermodulation
Distortion versus Supply Voltage
13
VDD = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
IDQ = 400 mA
12
G ps , POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 6. Intermodulation Distortion Products
versus Output Power
IMD
IMD, INTERMODULATION DISTORTION (dBc)
10
20
0
4W
Pout , OUTPUT POWER (WATTS)
Pout
G ps , GAIN (dB)
Pout , OUTPUT POWER (WATTS)
40
100 mA
300 mA
200 mA
11
−40 300 mA
10
200 mA
−50
9
IDQ = 400 mA
−60
0.1
1.0
10
VDD = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
100 mA
8
0.1
1.0
10
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Intermodulation Distortion
versus Output Power
Figure 9. Power Gain versus Output Power
MRF284LR1 MRF284LSR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
3
100
Ciss
Tflange = 100°C
C, CAPACITANCE (pF)
2
1
Coss
10
TJ = 175°C
Crss
0
8
12
16
20
24
1
28
0
VDD, DRAIN SUPPLY VOLTAGE (Vdc)
8
12
16
20
24
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
28
Figure 11. Capacitance versus
Drain Source Voltage
45
11
Gps
10
FUNDAMENTAL
40
9
Gps, GAIN (dB)
60
50
40
30
20
10
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
3rd Order
8
7
η
VDD = 26 Vdc
Pout = 30 W (PEP), IDQ = 200 mA
Two−Tone
Frequency Delta = 100 kHz
35
30
6
0
5
10
15
20 25 30 35 40
Pin, INPUT POWER (dBm)
45
50
55
Figure 12. Class A Third Order Intercept Point
−36
5
4
VSWR
3
60
1920
1940
1960
f, FREQUENCY (MHz)
3.0
−32
IMD
VDD = 26 Vdc
IDQ = 1.8 Adc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
1980
−40
2000
2.0
1.0
Figure 13. 1920 - 2000 MHz Broadband Circuit Performance
1.E+10
MTTF FACTOR (HOURS x AMPS 2)
Pout , OUTPUT POWER (dBm)
Figure 10. DC Safe Operating Area
4
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
0
50
100
150
200
TJ, JUNCTION TEMPERATURE (°C)
250
This graph displays calculated MTTF in hours x ampere2 drain current.
Life tests at elevated temperature have correlated to better than ±10%
of the theoretical prediction for metal failure. Divide MTTF factor by ID2
for MTTF in a particular application.
Figure 14. MTTF Factor versus Junction Temperature
MRF284LR1 MRF284LSR1
8
RF Device Data
Freescale Semiconductor
INPUT VSWR
4
EFFICIENCY (%)
0
INTERMODULATION
DISTORTION (dBc)
ID, DRAIN CURRENT (Adc)
Tflange = 75°C
1800 MHz
1800 MHz
Zload
f = 2000 MHz
Zsource
Zo = 5 Ω
f = 2000 MHz
VCC = 26 V, IDQ = 200 mA, Pout = 15 W Avg.
f
MHz
Zsource
Ω
1800
1.0 - j0.4
2.1 + j0.4
1860
1.0 - j0.8
2.2 - j0.2
1900
1.0 - j1.1
2.3 - j0.5
1960
1.0 - j1.4
2.5 - j0.9
2000
1.0 - j2.3
2.6 - j0.92
Zload
Ω
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedence
MRF284LR1 MRF284LSR1
RF Device Data
Freescale Semiconductor
9
NOTES
MRF284LR1 MRF284LSR1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
Q
aaa
2X
G
B
M
T A
M
B
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
3
B
(FLANGE)
2
D
bbb M T A
K
2X
2X
M
B
R
M
(LID)
ccc
N
ccc
(LID)
T A
M
M
B
M
T A
M
B
M
F
H
M
C
E
S
(INSULATOR)
T
M
bbb
(INSULATOR)
A
aaa
SEATING
PLANE
M
T A
M
B
M
T A
M
M
INCHES
MIN
MAX
0.795
0.805
0.225
0.235
0.125
0.175
0.210
0.220
0.055
0.065
0.004
0.006
0.562 BSC
0.077
0.087
0.220
0.250
0.355
0.365
0.357
0.363
0.125
0.135
0.227
0.233
0.225
0.235
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.19
20.45
5.72
5.97
3.18
4.45
5.33
5.59
1.40
1.65
0.10
0.15
14.28 BSC
1.96
2.21
5.59
6.35
9.02
9.27
9.07
9.22
3.18
3.43
5.77
5.92
5.72
5.97
0.13 REF
0.25 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
M
CASE 360B - 05
ISSUE G
NI - 360
MRF284LR1
A
B
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
A
A
(FLANGE)
B
1
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2
B
(FLANGE)
2X
D
bbb
M
T A
M
2X
K
B
M
R
(LID)
ccc
M
T A
M
N
(LID)
ccc
T A
M
B
M
F
H
M
B
M
E
C
S
(INSULATOR)
PIN 3
T
M
(INSULATOR)
bbb
M
T A
M
B
SEATING
PLANE
M
aaa
M
T A
M
B
CASE 360C - 05
ISSUE E
NI - 360S
MRF284LSR1
M
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.375
0.385
0.225
0.235
0.105
0.155
0.210
0.220
0.035
0.045
0.004
0.006
0.057
0.067
0.085
0.115
0.355
0.365
0.357
0.363
0.227
0.23
0.225
0.235
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
9.53
9.78
5.72
5.97
2.67
3.94
5.33
5.59
0.89
1.14
0.10
0.15
1.45
1.70
2.16
2.92
9.02
9.27
9.07
9.22
5.77
5.92
5.72
5.97
0.13 REF
0.25 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MRF284LR1 MRF284LSR1
RF Device Data
Freescale Semiconductor
11
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MRF284LR1 MRF284LSR1
Document Number: MRF284
Rev. 17, 5/2006
12
RF Device Data
Freescale Semiconductor