INFINEON PTMA180402FL

PTMA180402EL
PTMA180402FL
Confidential, Limited Internal Distribution
Wideband RF LDMOS Integrated Power Amplifier
40 W, 1800 – 2000 MHz
Description
The PTMA180402EL and PTMA180402FL are matched, wideband
40-watt, 2-stage, LDMOS integrated amplifiers intended for use in
all typical modulation formats from 1800 to 2000 MHz. These devices
are offered in thermally-enhanced ceramic packages for cool and
reliable operation.
PTMA180402EL
Package H-33265-8
PTMA180402FL
Package H-34265-8
Features
Broadband Performance
VDD = 28 V, IDQ1 = 110 mA, IDQ1 = 330 mA
35
30
-5
25
-10
20
-15
Return Loss
15
10
-20
Return Loss (dB)
Gain (dB)
Designed for wide RF and modulation bandwidths
and low memory effects
•
On-chip matching, integrated input DC block,
50-ohm input and > 5-ohm output
•
Typical single-carrier CDMA performance at
1960 MHz, 28 V
- Average output power = 4 W
- Linear gain = 30 dB
- Efficiency = 14%
- Adjacent channel power = –53 dBc
•
Typical 2-tone performance, 1960 MHz, 28 V
- Output power (PEP) = 50 W at IM3 = –30 dBc
- Efficiency = 33%
•
Capable of handling 10:1 VSWR @ 28 V, 40 W
(CW) output power
•
Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F
•
High-performance, thermally-enhanced packages,
Pb-free and RoHS compliant, with solder-friendly
plating
0
Gain
5
1700
•
-25
1800
1900
2000
2100
-30
2200
Frequency (MHz)
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 08, 2009-08-31
PTMA180402EL
PTMA180402FL
Confidential, Limited Internal Distribution
RF Characteristics
CDMA Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ1 = 110 mA, IDQ2 = 335 mA, POUT = 4 W average, ƒ = 1960 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
28.5
30
—
dB
Drain Efficiency
ηD
13
14
—
%
ACPR
—
–53
–50
dBc
Adjacent Channel Power Ratio
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, V GS = 0 V
IDSS
—
—
1.0
µA
VDS = 63 V, V GS = 0 V
IDSS
—
—
10.0
µA
RDS(on)
—
0.21
—
Ω
IDQ2 = 330 mA
VGS
2.0
2.5
3.0
V
VGS = 10 V, V DS = 0 V
IGSS
—
—
1.0
µA
Final Stage On-state Resistance
VGS = 10 V, V DS = 0.1 V
Operating Gate Voltage
VDS = 28 V, IDQ1 = 160 mA,
Gate Leakage Current
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
175
W
1.0
W/°C
TSTG
–40 to +150
°C
1st Stage
RθJC
5.0
°C/W
2nd Stage
RθJC
1.1
°C/W
Above 25°C derate by
Storage Temperature Range
Overall Thermal Resistance (TCASE = 70°C)
POUT = 40 W, IDQ1 = 160 mA, IDQ2 = 330 mA
Ordering Information
Type and Version
Package Type
Package Description
Shipping
Marking
PTMA180402EL V1
H-33265-8
Themally-enhanced, slotted flange
Tray
PTMA180402EL
PTMA180402FL V1
H-34265-8
Themally-enhanced, earless flange
Tray
PTMA180402FL
Data Sheet
2 of 11
Rev. 08, 2009-08-31
PTMA180402EL
PTMA180402FL
Confidential, Limited Internal Distribution
CW Performance
Two-tone at Selected Frequencies
VDD = 28 V, IDQ1 = 110 mA, IDQ2 = 330 mA
VDD = 28 V, IDQ1 = 130 mA, IDQ2 = 330 mA
50
Gain
30
30
29
20
ƒ = 1930 MHz
ƒ = 1960 MHz
ƒ = 1990 MHz
28
10
27
40
-20
35
-25
30
-30
25
-35
35
40
45
10
5
0
50
-45
-50
ƒ = 1930 MHz
ƒ = 1960 MHz
ƒ = 1990 MHz
30
35
Output Power (dBm)
40
-55
-60
45
Output Power, avg. (dBm)
IS-95 at Selected Frequencies
IS-95 at Selected Temperatures
VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA
VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA,
ƒ = 1960 MHz
-35
25
20
-45
15
-50
10
-55
ACPR
5
-60
-65
Gain (dB),
Power Added Efficiency (%)
Efficiency
2
4
6
8
35
-45
25
+25ºC
–25ºC
+90ºC
15
-50
PAE
-55
ACPR
5
-60
-5
0
0
-40
Gain
Power Added Efficiency (%)
ƒ = 1930 MHz
ƒ = 1960 MHz
ƒ = 1990 MHz
-40
ACPR (dBc)
-40
IMD3
15
0
30
Efficiency
20
-65
0
10
Output Power (W)
Adj. Ch. Power Ratio (dBc)
Gain (dB)
40
PAE (%)
Efficiency
31
Power Added Efficiency (%)
32
IMD3 (dBc)
Typical Performance (data taken in a production test fixture)
2
4
6
8
10
Output Power, avg. (W)
*See Infineon distributor for future availability.
Data Sheet
3 of 11
Rev. 08, 2009-08-31
PTMA180402EL
PTMA180402FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Gate – Source Voltage vs. Temperature
WCDMA Performance
VDD = 28 V, IDQ1 = 110 mA, IDQ2 = 335 mA
VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA,
Test Mode 1 w/64 DPCH, PAR = 7.5 dB
ƒ = 1930 MHz
ƒ = 1960 MHz
ƒ = 1990 MHz
-35
1.05
ACPR (dBc)
1.00
Slope = –1.3 mV/°C
0.95
Efficiency
-40
15
10
-45
5
-50
0.90
ACPR
0.85
0
-55
-30
-10
10
30
50
70
90
1
3
5
Temperature (°C)
7
9
11
Output Power (W)
EDGE EVM Performance
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA,
ƒ = 1960 MHz
VDD = 28 V, IDQ! = 160 mA, IDQ2 = 330 mA,
ƒ = 1960 MHz
-35
3
Efficiency
20
2
15
EVM
10
1
5
0
32
34
36
38
40
42
-55
32
24
400 kHz
-65
16
8
600 kHz
-85
0
30
44
32
34
36
38
40
42
44
Output Power (dBm)
Output Power (dBm)
Data Sheet
Efficiency
-75
0
30
40
-45
ACPR (dB) .
25
EVM RMS (average %).
30
Drain Efficiency (%)
20
Efficiency (%)
Normalized Gate – Source
Voltage (threshold), V
1.10
25
Power Added Efficiency (%)
-30
1.15
4 of 11
Rev. 08, 2009-08-31
PTMA180402EL
PTMA180402FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Six-carrier TD-SCDMA Drive-up
VDD = 28 V, IDQ1 = 230 mA, IDQ2 = 335 mA,
ƒ = 2017.5 MHz
25
-30
Adj Low er
Adj Upper
20
ACPR (dBc)
Alt Low er
Alt Upper
-40
15
Effciency
-45
10
-50
5
Efficiency (%)
-35
0
-55
31
32
33
34
35
36
37
38
39
Output Power (dBm)
Broadband Circuit Impedance
Z Load Ω
Frequency
Z Load
8.89
–3.62
1800
7.27
–2.99
1900
6.26
–2.13
2000
5.59
–1.19
2100
5.14
–0.27
2200
4.89
0.67
0.2
0.1
0.0
DTOW ARD LOA
GTHS
2200 MHz
1700
1700 MHz
0.1
W
LEN
A VE
Z0 = 50 Ω
- W AV ELE NGT H
ST
S
jX
0.5
IN
R
0.3
MHz
0.4
Z Load
D
Data Sheet
5 of 11
Rev. 08, 2009-08-31
PTMA180402EL
PTMA180402FL
Confidential, Limited Internal Distribution
Reference Circuit
VD1
VD2
C1
100µF
50V
C2
10µF
C3
1µF
C4
0.1µF
C19
12pF
C5
12pF
C21
1µF
C20
0.1µF
C22
10µF
C23
100µF
50V
l8
DUT
1
2
3
J1
4
l1
PTMA18040
C31
12pF
8
l2
5
6
7
VG1
C6
10µF
C7
1µF
C8
0.1µF
C9
12pF
C11
1µF
C12
0.1µF
C13
12pF
l6
l7
C27
10µF
C28
100µF
50V
J2
C14
12pF
l9
C16
1µF
C10
10µF
l5
C30
2.7pF
C29
2.2pF
C15
0.1µF
VG2
l4
l3
C17
10µF
C18
100µF
50V
C24
12pF
C25
0.1µF
C26
1µF
Reference circuit schematic for ƒ = 1930 – 1990 MHz
Circuit Assembly Information
DUT
PCB
PTMA180402EL or PTMA180402FL
0.76 mm [.030"] thick, εr = 3.48
LDMOS IC
Rogers RO4350
1 oz. copper
Microstrip
Electrical Characteristics at 1960 MHz
Dimensions: L x W (mm)
Dimensions: L x W (in.)
l1
l2
l3
l4
l5
l6
l7
l8, l9
Data Sheet
0.224
0.022
0.027
0.035
0.048
0.153
0.046
0.136
λ, 49.8
λ, 10.4
λ, 10.4
λ, 34.1
λ, 34.1
λ, 44.5
λ, 49.8
λ, 61.1
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
20.75 x 1.70
1.85 x 13.00
2.26 x 13.00
3.18 x 3.00
4.29 x 3.00
14.07 x 2.03
4.27 x 1.70
12.83 x 1.19
6 of 11
0.817
0.073
0.089
0.125
0.169
0.554
0.168
0.505
x
x
x
x
x
x
x
x
0.067
0.512
0.512
0.118
0.118
0.080
0.067
0.047
Rev. 08, 2009-08-31
PTMA180402EL
PTMA180402FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Reference circuit asembly diagram* (not to scale)*
Component
Description
Suggested
Manufacturer
P/N or Comment
C1, C18, C23, C28
C2, C6, C10, C17, C22, C27
C3, C7, C11, C16, C21, C26
C4, C8, C12, C15, C20, C25
C5, C9, C13, C14, C19, C24,
C31
C29
C30
Electrolytic capacitor, 100 µF, 50 V
Ceramic capacitor, 10 µF
Ceramic capacitor, 1 µF
Capacitor, 0.1 µF
Ceramic capacitor, 12 pF
Digi-Key
Murata
Digi-Key
Digi-Key
ATC
PCE3718CT-ND
GRM422Y5V106Z050AL
445-1411-2-ND
399-1267-2-ND
600S120JT
Ceramic capacitor, 2.2 pF
Ceramic capacitor, 2.7 pF
ATC
ATC
600S2R2CT
600S2R7BT
*Gerber files for this circuit available on request
Data Sheet
7 of 11
Rev. 08, 2009-08-31
PTMA180402EL
PTMA180402FL
Confidential, Limited Internal Distribution
Package Specifications
Package H-33265-8 Outline
15.24
[.600]
7.11
[.280]
(45° X 2.03 [.08])
4X R 0.13 [.05] MAX
LID
C
L
2.54±0.51
[.100±.020]
8
10.16 [.400]
WINDOW FRAME & LID
C
L
1 2 3
4
9.78 [.385]
FLANGE
15.24±0.51
[.600±.020]
5 6 7
4X R 0.63 [.025] MAX
WINDOW FRAME
6X 0.406
[.016]
2X R1.59
[R.063]
0.76
[.030]
2X 4.57
[.180]
4X R1.52
[R.060]
2X 3.48
[.137]
2X 2.21
[.087]
9.55
[.376]
REF
10.16
[.400]
C
L
SPH 1.57
[.062]
1.02
[.040]
0.038 [.0015] -Ah-33+34265_POs_33265-8_0801
3.68±.38
[.145±.015]
20.32
[.800]
S
Diagram Notes—unless otherwise specified:
1.
Interpret dimensions and tolerances per ASME Y14.5M-1994.
2.
Pins: S = source; see page 11 for complete list and diagram.
3.
Lead thickness: 0.127±0.025 [.005±0.001]
4.
Gold plating less than 0.25 micron [10 microinch].
5.
All tolerances ± 0.127 [.005] unless specified otherwise.
6. Primary dimensions are mm. Alternate dimensions are inches.
Data Sheet
8 of 11
Rev. 08, 2009-08-31
PTMA180402EL
PTMA180402FL
Confidential, Limited Internal Distribution
Package Specifications (cont.)
Package H-34265-8 Outline
7.11
[.280]
C
L
(45° X 2.03 [.08])
2.54±0.51
[.100±.020]
4X R 0.13 [.05] MAX
LID
8
10.16 [.400] SQ
FLANGE & LID
15.24±0.51
[.600±.020]
C
L
1 2 3
4
5 6 7
4X R 0.63 [.025] MAX
FLANGE
6X 0.406
[.016]
0.76
[.030]
2X 4.57
[.180]
2X 3.48
[.137]
2X 2.21
[.087]
9.55
[.376]
REF
10.16
[.400]
C
L
SPH 1.57
[.062]
1.02
[.040]
0.038 [.0015] -Ah-33+34265_POs_34265-8_0801
3.68±.38
[.145±.015]
10.16
[.400]
S
Diagram Notes—unless otherwise specified:
1.
Interpret dimensions and tolerances per ASME Y14.5M-1994.
2.
Pins: S = source; see page 11 for complete list and diagram.
3.
Lead thickness: 0.127±0.025 [.005±0.001]
4.
Gold plating less than 0.25 micron [10 microinch].
5.
All tolerances ± 0.127 [.005] unless specified otherwise.
6. Primary dimensions are mm. Alternate dimensions are inches.
Data Sheet
9 of 11
Rev. 08, 2009-08-31
PTMA180402EL
PTMA180402FL
Confidential, Limited Internal Distribution
Package Specifications (cont.)
Package H-3X265-8 Pin Diagram
Thermal FET
1
2
3
4
8
5
6
7
NC
1st
2nd
a180402efl PD pi nout 2007 12 12
Pin #
Function
S (flange, see Package Outlines)
1
2
3
4
5
6
7
8
Source
Drain 1
FET_D
FET_G
RF In
Gate 1
Gate 2
NC
RFOut/D2
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
10 of 11
Rev. 08, 2009-08-31
PTMA180402EL/FL
Confidential, Limited Internal Distribution
Revision History:
2009-08-31
2009-04-01, Data Sheet
Previous Version:
Page
Subjects (major changes since last revision)
1
Data Sheet
Revised VSWR rating
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GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-08-31
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 08, 2009-08-31