JDSU ETX500T

COMMUNICATIONS COMPONENTS
Large-area InGaAs Photodiodes
ETX 500 and ETX 1000 Series
Key Features
• High responsivity in near infrared spectrum
• Low dark current for high accuracy
• High shunt resistance
• Linear over wide range of input optical power
• Active diameters of 0.5 and 1 mm
Applications
• Optical power meters
• Optical fiber identifiers
• Optical attenuation test sets
• Near infrared spectroscopy
• Infrared range finders
The JDSU ETX 500T and ETX 1000T series large-area InGaAs PIN
photodetectors have photosensitive areas with diameters of 500 and 1000 µm,
respectively. These photodiodes offer high responsivity in the 800 – 1700 nm
spectrum, and are designed for use in instrumentation, sensing, and rangefinding applications.
The detectors feature high sensitivity and linear spectral responsivity over a broad
range of input powers. When operating in photovoltaic mode, a noise current
density of 10 fA/Hz1/2 is typical at room temperature. When reverse-biased for
greater bandwidth, a noise floor of 60fA/Hz1/2 at -5 V is typical. Linear spectral
response results from the low series resistance of the photodiodes.
The ETX 500T and ETX 1000T series are optimal for the high-speed, differential
mode measurements common in precision optical power meters, optical fiber
identifiers, and optical loss test sets.
The ETX 500T and ETX1000T photodiodes are packaged in hermetically-sealed
TO cans.
NORTH AMERICA : 800 498-JDSU (5378)
WORLDWIDE : +800 5378-JDSU
WEBSITE : www.jdsu.com
LARGE AREA INGAAS PHOTODIODES
2
Dimensions Diagram: ETX 500T, ETX 1000T
(Specifications in mm unless otherwise noted.)
Wire Bond
to Chip
4.70
2.50
0.5
3.20
25.4
45°
Electrical Schematic
3
5.4
Ø2.54
PIN DIA
2
1.0
2
1.27
1
3
LARGE AREA INGAAS PHOTODIODES
3
Specifications
Parameter
Electrical and Optical Specifications
Conditions
Active diameter
Responsivity at 850 nm
Responsivity at 1300 nm
Responsivity at 1500 nm
Dark current
Shunt resistance1
Linearity2
Total capacitance3
Bandwidth4
Maximum Ratings
Reverse voltage
Reverse current5
Forward current6
Power dissipation
Operating temperature
Storage temperature
Typical
Minimum
Typical
Minimum
Typical
Typical
Typical
Maximum
Minimum
Typical
Typical
Typical
Maximum
Typical
Typical
Typical
Typical
Typical
1. VR = 10 mV
2. For ETX 500T and ETX 1000T, to 9 dBm
3. For ETX 500T and ETX 1000T, VR = 0 V
4. -3 dB point into a 50 Ω load
5. Under reverse bias, current at which device may be damaged
6. Under forward bias, current at which device may be damaged
ETX 500T
ETX 1000T
25 °C, VR = 5 V
0.5 mm
0.10 A/W
0.20 A/W
0.80 A/W
0.90 A/W
0.95 A/W
12 nA
100 nA
5.0 MΩ
250 MΩ
±0.15 dB
35 pF
50 pF
140 MHz
25 °C, VR = 5 V
1.0 mm
0.10 A/W
0.20 A/W
0.80 A/W
0.90 A/W
0.95 A/W
50 nA
400 nA
2.0 MΩ
50 MΩ
±0.15 dB
100 pF
150 pF
35 MHz
20 V
10 mA
10 mA
100 mW
-40 to 85°C
-40 to 85°C
20 V
10 mA
10 mA
100 mW
-40 to 85°C
-40 to 85°C
LARGE AREA INGAAS PHOTODIODES
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Ordering Information
For more information on this or other products and their availability, please contact your local JDSU account manager or
JDSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide, or via e-mail at
[email protected].
Sample: ETX 500T
Product Code
ETX 500T
ETX 1000T
Description
0.5 mm diode in TO46 package
1.0 mm diode in TO46 package
Precaution for Use
Glass windows must be cleaned with 99 percent pure, reagent grade Isopropanol.
ESD PROTECTION IS IMPERATIVE. Use of grounding straps, antistatic mats, and other standard ESD protective
equipment is recommended when handling or testing any InGaAs PIN or any other junction photodiode.
Quality and Reliability
JDSU maintains a strict quality control program throughout the design and manufacturing process of its photodetectors. All
products are evaluated against MIL-STD 883C, GR468, or custom specifications. JDSU purges each photodiode for 18 hours
at 125°C, with bias applied. Long-term life-testing has indicated an expected lifetime of at least 107 hours for the large area
InGaAs photodiodes ETX 500 and ETX 1000T. Contact JDSU for details of specific qualification tests performed on the largearea InGaAs photodiode series.
NORTH AMERICA : 800 498-JDSU (5378)
WORLDWIDE : +800 5378-JDSU
WEBSITE : www.jdsu.com
Product specifications and descriptions in this document subject to change without notice. © 2008 JDS Uniphase Corporation 30137357 002 1108 ETX500.DS.CC.AE
November 2008