LX3050/52 12.5Gbps I N T E G R A T E D P R O D U C T S Coplanar InGaAs/InP PIN Photo Diode PRELIMINARY DATA SHEET KEY FEATURES DESCRIPTION The LX305X series of coplanar waveguide photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations including traditional wirebond or flip chip assembly This device is ideal for manufacturers of optical receivers, transponders, optical transmission modules and combination PIN photo diode – transimpedance amplifier. Microsemi can assemble die on submounts and custom configurations. LX3050 single die LX3052, 1x4 array die Coplanar Waveguide , 50ohm High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side 125µm Pad pitch Die good for bond wire or flip chip applications APPLICATIONS WWW . Microsemi .C OM Microsemi’s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offer high responsivity, low dark current, and high bandwidth for high performance and low sensitivity receiver design. 1310nm CATV Optical Applications 1550nm DWDM Optical Applications SONET/SDH, ATM 10 Gigabit Ethernet, Fibre Channel 1310nm VCSEL receivers PRODUCT HIGHLIGHT • • • • Coplanar Design (gnd-signal-gnd) 50 ohm characteristic impedance 125 um standard pad pitch for ease of test Large 75um x 75um pad size for ease of packaging Wire bond or Flip Chip Capability PACKAGE ORDER INFO Die 0 to 85 Copyright 2002 Rev. 0.3a Die LX3050/52 TA (°C) LX3050 LX3052 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX3050/52 12.5Gbps I N T E G R A T E D Coplanar InGaAs/InP PIN Photo Diode P R O D U C T S PRELIMINARY DATA SHEET Parameter ` Symbol Min LX3050/52 Typ Max Units MAXIMUM RATINGS +85 +125 +260 10 seconds maximum at temperature ELECTRICAL CHARACTERISTICS Active Area Diameter Responsivity (1) VR = 5V, λ = 1550nm VR = 5V, λ = 1310nm VR = 5V IR = 10 µ A VR = 5V VR = 5V, λ = 1550nm @-3dB 1x4 array only @ 10 GHz R Dark Current Breakdown Voltage Capacitance Bandwidth (2) Cross-talk Note: -20 -55 TJ TSTG Operating Junction Temperature Range Storage Temperature Range Maximum Soldering Temperature ` Test Conditions ID BVR C BW S21 0.90 0.85 30 0.12 13 -35 32 1.0 0.95 0.4 45 0.135 15 o C C o C o µm A/W 5 0.15 WWW . Microsemi .C OM CHARACTERISTICS Test conditions (unless otherwise noted): TA = 25 C, VR = 5 Volts o nA Volts pF GHz dB 1. Antireflective coating is ¼ wavelength @ 1430nm covering 1310 and 1550mn applications. 2. Bandwidth is measured @ -3dB electrical power (photocurrent drops to 71% of DC value) into a 50Ω load. DIE MECHANICALS Part Number LX3050 LX3052 Active Area,A, µm Die Dimension, µm Y 450 450 32 32 Pad Dimension, µm X 450 1200 w 75 75 Pad Pitch, p,µm Die thickness, µm 125 125 152 152 v 75 75 LX3050 325.0 250.0 125.0 12.5um Y 75um 75um 50um v A 145um w n p n contact contact contact (cathode) p X 450um ELECTRICALS LX3052 Y 2p X Copyright 2002 Rev. 0.3a Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 LX3050/52 12.5Gbps I N T E G R A T E D P R O D U C T S Coplanar InGaAs/InP PIN Photo Diode PRELIMINARY DATA SHEET LX3050, C-V Vr=-5V, BW=15.8GHz 9 0.25 Vr=-4V,BW=15.5GHz 0.20 Vr=-3V, BW=15.0GHz 8 Vr=-2.4V, BW=14.0GHz Vr=-2V, BW=13.5 GHz Vr=-1V, Bw =10.6GHz 7 C(pF) Relative S21(dB) LX3050 BW (Vr = 1-5V, 1550 nm) 0.15 0.10 0.05 6 0.00 0 5 0.0E+00 5.0E+09 1.0E+10 1.5E+10 2 4 2.0E+10 6 8 10 Vr(V) Frequency (Hz) LX3050 BV over Temperature LX3050 Id@5V over Temperature 60 40 Mean BV (V) 30 20 Max BV (V) 10 Id@5V (nA) 100 Min BV (V) 50 BV (V) WWW . Microsemi .C OM CHARACTERISTIC CURVES Min ID@5V (nA) 10 Mean ID@5V (nA) 1 Max ID@5V (nA) 0.1 0 -40 -20 0 20 40 60 -40 -20 80 100 120 0 20 40 60 80 100 120 Temp (oC) Temp (oC) GRAPHS Copyright 2002 Rev. 0.3a Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX3050/52 12.5Gbps I N T E G R A T E D P R O D U C T S Coplanar InGaAs/InP PIN Photo Diode PRELIMINARY DATA SHEET WWW . Microsemi .C OM NOTES ESD protection is important. Standard ESD protection procedures should be employed whenever handling InGaAs PIN photo diode. Preliminary Data – Information contained in this document is pre-production data and is proprietary to Microsemi. It may not be modified in any way without the express written consent of Microsemi. Product referred to herein is offered in sample form only and Microsemi reserves the right to change or discontinue this proposed product at any time. Copyright 2002 Rev. 0.3a Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 NOTES PRECAUTIONS FOR USE