ETC LX3050

LX3050/52 12.5Gbps
I N T E G R A T E D
P R O D U C T S
Coplanar InGaAs/InP PIN Photo Diode
PRELIMINARY DATA SHEET
KEY FEATURES
DESCRIPTION
The LX305X series of coplanar
waveguide photo diodes are currently
offered in die form allowing
manufacturers the versatility of
custom assembly configurations
including traditional wirebond or flip
chip assembly
This device is ideal for
manufacturers of optical receivers,
transponders, optical transmission
modules and combination PIN photo
diode – transimpedance amplifier.
Microsemi can assemble die on
submounts
and
custom
configurations.
LX3050 single die
LX3052, 1x4 array die
Coplanar Waveguide , 50ohm
High Responsivity
Low Dark Current
High Bandwidth
Anode/Cathode on Illuminated Side
125µm Pad pitch
Die good for bond wire or flip chip
applications
APPLICATIONS
WWW . Microsemi .C OM
Microsemi’s InGaAs/InP PIN Photo
Diode chips are ideal for high bandwidth
1310nm and 1550nm optical networking
applications.
The device series offer high responsivity, low dark current, and high
bandwidth for high performance and low
sensitivity receiver design.
1310nm CATV Optical Applications
1550nm DWDM Optical
Applications
SONET/SDH, ATM
10 Gigabit Ethernet, Fibre Channel
1310nm VCSEL receivers
PRODUCT HIGHLIGHT
•
•
•
•
Coplanar Design (gnd-signal-gnd) 50 ohm characteristic impedance
125 um standard pad pitch for ease of test
Large 75um x 75um pad size for ease of packaging
Wire bond or Flip Chip Capability
PACKAGE ORDER INFO
Die
0 to 85
Copyright  2002
Rev. 0.3a
Die
LX3050/52
TA (°C)
LX3050
LX3052
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
LX3050/52 12.5Gbps
I N T E G R A T E D
Coplanar InGaAs/InP PIN Photo Diode
P R O D U C T S
PRELIMINARY DATA SHEET
Parameter
`
Symbol
Min
LX3050/52
Typ
Max
Units
MAXIMUM RATINGS
+85
+125
+260
10 seconds maximum at temperature
ELECTRICAL CHARACTERISTICS
Active Area Diameter
Responsivity (1)
VR = 5V, λ = 1550nm
VR = 5V, λ = 1310nm
VR = 5V
IR = 10 µ A
VR = 5V
VR = 5V, λ = 1550nm @-3dB
1x4 array only @ 10 GHz
R
Dark Current
Breakdown Voltage
Capacitance
Bandwidth (2)
Cross-talk
Note:
-20
-55
TJ
TSTG
Operating Junction Temperature Range
Storage Temperature Range
Maximum Soldering Temperature
`
Test Conditions
ID
BVR
C
BW
S21
0.90
0.85
30
0.12
13
-35
32
1.0
0.95
0.4
45
0.135
15
o
C
C
o
C
o
µm
A/W
5
0.15
WWW . Microsemi .C OM
CHARACTERISTICS
Test conditions (unless otherwise noted): TA = 25 C, VR = 5 Volts
o
nA
Volts
pF
GHz
dB
1. Antireflective coating is ¼ wavelength @ 1430nm covering 1310 and 1550mn applications.
2. Bandwidth is measured @ -3dB electrical power (photocurrent drops to 71% of DC value) into a 50Ω load.
DIE MECHANICALS
Part Number
LX3050
LX3052
Active Area,A,
µm
Die Dimension, µm
Y
450
450
32
32
Pad Dimension, µm
X
450
1200
w
75
75
Pad Pitch, p,µm
Die thickness, µm
125
125
152
152
v
75
75
LX3050
325.0
250.0
125.0
12.5um
Y
75um
75um
50um
v
A
145um
w
n
p
n
contact
contact contact
(cathode)
p
X
450um
ELECTRICALS
LX3052
Y
2p
X
Copyright  2002
Rev. 0.3a
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
LX3050/52 12.5Gbps
I N T E G R A T E D
P R O D U C T S
Coplanar InGaAs/InP PIN Photo Diode
PRELIMINARY DATA SHEET
LX3050, C-V
Vr=-5V, BW=15.8GHz
9
0.25
Vr=-4V,BW=15.5GHz
0.20
Vr=-3V, BW=15.0GHz
8
Vr=-2.4V, BW=14.0GHz
Vr=-2V, BW=13.5 GHz
Vr=-1V, Bw =10.6GHz
7
C(pF)
Relative S21(dB)
LX3050 BW (Vr = 1-5V, 1550 nm)
0.15
0.10
0.05
6
0.00
0
5
0.0E+00
5.0E+09
1.0E+10
1.5E+10
2
4
2.0E+10
6
8
10
Vr(V)
Frequency (Hz)
LX3050 BV over Temperature
LX3050 [email protected] over Temperature
60
40
Mean
BV (V)
30
20
Max
BV (V)
10
[email protected] (nA)
100
Min
BV (V)
50
BV (V)
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CHARACTERISTIC CURVES
Min
[email protected] (nA)
10
Mean
[email protected] (nA)
1
Max
[email protected] (nA)
0.1
0
-40 -20
0
20
40
60
-40 -20
80 100 120
0
20 40 60 80 100 120
Temp (oC)
Temp (oC)
GRAPHS
Copyright  2002
Rev. 0.3a
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
LX3050/52 12.5Gbps
I N T E G R A T E D
P R O D U C T S
Coplanar InGaAs/InP PIN Photo Diode
PRELIMINARY DATA SHEET
WWW . Microsemi .C OM
NOTES
ESD protection is important. Standard ESD protection procedures should be employed whenever handling InGaAs PIN photo
diode.
Preliminary Data – Information contained in this document is pre-production data and is
proprietary to Microsemi. It may not be modified in any way without the express written
consent of Microsemi. Product referred to herein is offered in sample form only and
Microsemi reserves the right to change or discontinue this proposed product at any time.
Copyright  2002
Rev. 0.3a
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
NOTES
PRECAUTIONS FOR USE