ETC LX3052

LX3050/52 12.5Gbps
Coplanar InGaAs/InP PIN Photo Diode
OPTO-ELECTRONIC PRODUCTS
PRELIMINARY DATASHEET
KEY FEATURES
DESCRIPTION
The device series offers impedance
matched coplanar waveguide structure for
high performance and sensitivity.
The LX305X series of coplanar
waveguide photo diodes are currently
offered in die form allowing
manufacturers the versatility of
custom assembly configurations
including traditional wirebond or flip
chip assembly
This device is ideal for
manufacturers of optical receivers,
transponders, optical transmission
modules and combination PIN photo
diode – transimpedance amplifier.
Microsemi can assemble die on
submounts and custom
configurations.
S
SLX3050 single die
SLX3052, 1x4 array die
SCoplanar Waveguide , 50ohm
SHigh Responsivity
SLow Dark Current
SHigh Bandwidth
SAnode/Cathode on Illuminated Side
S125µm Pad pitch
S
die good for bond wire or flip chip
applications
W W W. Microsemi .COM
Microsemi’s InGaAs/InP PIN Photo
Diode chips are ideal for high bandwidth
1310nm and 1550nm optical networking
applications.
APPLICATIONS
S1310nm CATV Optical Applications
S1550nm DWDM Optical Applications
SSONET/SDH, ATM
S10 Gigabit Ethernet, Fibre Channel
S1310nm VCSEL receivers
BENEFITS
SLarge Wirebond Contact Pads
SLow Contact Resistance
SWire bond or flip chip applications
SGround- signal-Ground pad
configuration for standard RF test
probes
PRODUCT HIGHLIGHT
•
•
•
•
Coplanar Design (gnd-signal-gnd) 50 ohm
characteristic impedance
125 um standard pad pitch for ease of test
Large 75um x 75um pad size for ease of
packaging
Wire bond or Flip Chip capability
LX3050/52
Copyright ¤ 2002
Rev. 1.2
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
LX3050/52 12.5Gbps
Coplanar InGaAs/InP PIN Photo Diode
OPTO-ELECTRONIC PRODUCTS
Active Area
,A, µm
LX3050
LX3052
32
32
Die Dimension,
µm
Y
450
450
Pad Dimension,
µm
X
450
1200
w
75
75
Pad Pitch, p,
µm
v
75
75
W W W. Microsemi .COM
Part
Number
PRELIMINARY DATASHEET
Die thickness,
µm
125
125
152
152
CHARACTERISTICS
Test conditions (unless otherwise noted): TA = 25oC, VR = 5 Volts
Parameter
<
Test Conditions
Min
LX3050/52
Typ
Max
Units
MAXIMUM RATINGS
Operating Junction Temperature Range
Storage Temperature Range
Maximum Soldering Temperature
<
Symbol
ELECTRICAL CHARACTERISTICS
Active Area Diameter
Responsivity (1)
Dark Current
Breakdown Voltage
Capacitance
Bandwidth (2)
Bandwidth (optical)
Isolation
Note:
-20
-55
TJ
TSTG
+100
+125
+260
10 seconds maximum at temperature
R
ID
BVR
C
BW
S21
VR = 5V, λ = 1550nm
VR = 5V, λ = 1310nm
VR = 5V
IR = 10 µ A
VR = 5V
VR = 5V, λ = 1550nm @-3dB
1x4 array only
0.90
0.85
0.11
17
C
C
o
C
o
µm
A/W
32
1.1
0.95
0.4
20
12
15
40
o
0.15
nA
Volts
pF
GHz
GHz
dB
1. Antireflective coating is ¼ wavelength at 1430nm covering 1310 and 1550nm applications
2. Bandwidth is measured at –3dB electrical power (photocurrent drops to 71% of DC value)
Die Geometry (see drawings)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Copyright ¤ 2002
Rev. 1.2
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
LX3050/52 12.5Gbps
Coplanar InGaAs/InP PIN Photo Diode
OPTO-ELECTRONIC PRODUCTS
PRELIMINARY DATASHEET
W W W. Microsemi .COM
LX3050
Y
v
w
p
X
LX3052
Y
2p
X
Copyright ¤ 2002
Rev. 1.2
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
LX3050/52 12.5Gbps
Coplanar InGaAs/InP PIN Photo Diode
OPTO-ELECTRONIC PRODUCTS
PRELIMINARY DATASHEET
W W W. Microsemi .COM
325.0
250.0
125.0
12.5um
75um
75um
50um
A
145um
n
p
n
contact
contact contact
(cathode)
450um
Copyright ¤ 2002
Rev. 1.2
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
LX3050/52 12.5Gbps
Coplanar InGaAs/InP PIN Photo Diode
OPTO-ELECTRONIC PRODUCTS
PRELIMINARY DATASHEET
W W W. Microsemi .COM
C (pF)
LX3050/2 CV
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
[email protected] (pF)
[email protected] (pF)
0
0.5
1
1.5
2
V
C (pF)
LX3050/2 CV
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
[email protected] (pF)
[email protected] (pF)
0 1 2 3 4 5 6 7 8 9 10
V
PRECAUTIONS FOR USE
ESD protection is important. Standard ESD protection procedures should be employed whenever handling InGaAs PIN photo diode.
Copyright ¤ 2002
Rev. 1.2
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5