LX3050/52 12.5Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATASHEET KEY FEATURES DESCRIPTION The device series offers impedance matched coplanar waveguide structure for high performance and sensitivity. The LX305X series of coplanar waveguide photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations including traditional wirebond or flip chip assembly This device is ideal for manufacturers of optical receivers, transponders, optical transmission modules and combination PIN photo diode – transimpedance amplifier. Microsemi can assemble die on submounts and custom configurations. S SLX3050 single die SLX3052, 1x4 array die SCoplanar Waveguide , 50ohm SHigh Responsivity SLow Dark Current SHigh Bandwidth SAnode/Cathode on Illuminated Side S125µm Pad pitch S die good for bond wire or flip chip applications W W W. Microsemi .COM Microsemi’s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. APPLICATIONS S1310nm CATV Optical Applications S1550nm DWDM Optical Applications SSONET/SDH, ATM S10 Gigabit Ethernet, Fibre Channel S1310nm VCSEL receivers BENEFITS SLarge Wirebond Contact Pads SLow Contact Resistance SWire bond or flip chip applications SGround- signal-Ground pad configuration for standard RF test probes PRODUCT HIGHLIGHT • • • • Coplanar Design (gnd-signal-gnd) 50 ohm characteristic impedance 125 um standard pad pitch for ease of test Large 75um x 75um pad size for ease of packaging Wire bond or Flip Chip capability LX3050/52 Copyright ¤ 2002 Rev. 1.2 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX3050/52 12.5Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS Active Area ,A, µm LX3050 LX3052 32 32 Die Dimension, µm Y 450 450 Pad Dimension, µm X 450 1200 w 75 75 Pad Pitch, p, µm v 75 75 W W W. Microsemi .COM Part Number PRELIMINARY DATASHEET Die thickness, µm 125 125 152 152 CHARACTERISTICS Test conditions (unless otherwise noted): TA = 25oC, VR = 5 Volts Parameter < Test Conditions Min LX3050/52 Typ Max Units MAXIMUM RATINGS Operating Junction Temperature Range Storage Temperature Range Maximum Soldering Temperature < Symbol ELECTRICAL CHARACTERISTICS Active Area Diameter Responsivity (1) Dark Current Breakdown Voltage Capacitance Bandwidth (2) Bandwidth (optical) Isolation Note: -20 -55 TJ TSTG +100 +125 +260 10 seconds maximum at temperature R ID BVR C BW S21 VR = 5V, λ = 1550nm VR = 5V, λ = 1310nm VR = 5V IR = 10 µ A VR = 5V VR = 5V, λ = 1550nm @-3dB 1x4 array only 0.90 0.85 0.11 17 C C o C o µm A/W 32 1.1 0.95 0.4 20 12 15 40 o 0.15 nA Volts pF GHz GHz dB 1. Antireflective coating is ¼ wavelength at 1430nm covering 1310 and 1550nm applications 2. Bandwidth is measured at –3dB electrical power (photocurrent drops to 71% of DC value) Die Geometry (see drawings) IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Copyright ¤ 2002 Rev. 1.2 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 LX3050/52 12.5Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATASHEET W W W. Microsemi .COM LX3050 Y v w p X LX3052 Y 2p X Copyright ¤ 2002 Rev. 1.2 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX3050/52 12.5Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATASHEET W W W. Microsemi .COM 325.0 250.0 125.0 12.5um 75um 75um 50um A 145um n p n contact contact contact (cathode) 450um Copyright ¤ 2002 Rev. 1.2 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 LX3050/52 12.5Gbps Coplanar InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRELIMINARY DATASHEET W W W. Microsemi .COM C (pF) LX3050/2 CV 0.5 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 C@85oC (pF) C@25oC (pF) 0 0.5 1 1.5 2 V C (pF) LX3050/2 CV 0.5 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 C@85oC (pF) C@25oC (pF) 0 1 2 3 4 5 6 7 8 9 10 V PRECAUTIONS FOR USE ESD protection is important. Standard ESD protection procedures should be employed whenever handling InGaAs PIN photo diode. Copyright ¤ 2002 Rev. 1.2 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5