FDI8442 N-Channel PowerTrench® MOSFET 40V, 80A, 2.9mΩ Features Applications Typ rDS(on) = 2.3mΩ at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 181nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter / Alternator Qualified to AEC Q101 Distributed Power Architectures and VRMs RoHS Compliant Primary Switch for 12V Systems ©2007 Fairchild Semiconductor Corporation FDI8442 Rev. A 1 www.fairchildsemi.com FDI8442 N-Channel PowerTrench® MOSFET August 2007 Symbol Drain to Source Voltage VDSS VGS ID Parameter Ratings 40 Units V Gate to Source Voltage ±20 V Drain Current Continuous (TC<158oC, VGS = 10V) 80 Drain Current Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W) 23 Pulsed EAS PD A See Figure 4 Single Pulse Avalanche Energy (Note 1) 720 mJ Power Dissipation 254 W Derate above 25oC 1.7 W/oC -55 to +175 oC 0.59 oC/W 62 oC/W TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient (Note 2) Package Marking and Ordering Information Device Marking FDI8442 Device FDI8442 Package TO-262 Reel Size Tube Tape Width N/A Quantity 50 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units 40 - - - V - 1 - - 250 ±100 nA V Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 32V VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V - - VDS = VGS, ID = 250μA 2 2.9 4 ID = 80A, VGS = 10V - 2.3 2.9 ID = 80A, VGS = 10V, TJ = 175°C - 3.9 5.0 mΩ - 12200 - pF - 1040 - pF - 640 - pF TJ = 150°C μA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VGS = 0.5V, f = 1MHz - 1.0 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 181 235 nC Qg(TH) Threshold Gate Charge VGS = 0 to 2V - 23 30 nC Qgs Gate to Source Gate Charge - 49 - nC Qgs2 Gate Charge Threshold to Plateau - 26 - nC Qgd Gate to Drain “Miller” Charge - 41 - nC FDI8442 Rev. A VDS = 25V, VGS = 0V, f = 1MHz 2 VDD = 20V ID = 80A Ig = 1mA www.fairchildsemi.com FDI8442 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t(on) Turn-On Time - - 62 ns td(on) Turn-On Delay Time - 19.5 - ns tr Turn-On Rise Time - 19.3 - ns td(off) Turn-Off Delay Time - 57 - ns tf Turn-Off Fall Time - 17.2 - ns toff Turn-Off Time - - 118 ns ISD = 80A - 0.9 1.25 V ISD = 40A - 0.8 1.0 V VDD = 20V, ID = 80A VGS = 10V, RGS = 2Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time IF = 75A, di/dt = 100A/μs - 49 64 ns Qrr Reverse Recovery Charge IF = 75A, di/dt = 100A/μs - 70 91 nC Notes: 1: Starting TJ = 25oC, L = 0.35mH, IAS = 64A 2: Pulse width = 100s. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDI8442 Rev. A 3 www.fairchildsemi.com FDI8442 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 300 1.0 250 ID, DRAIN CURRENT (A) POWER DISSIPATION MULIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) NORMALIZED THERMAL IMPEDANCE, ZθJC 150 100 50 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) Figure 1. Normalized Power Dissipation vs Case Temperature 2 1 VGS = 10V 200 0 25 175 CURRENT LIMITED BY PACKAGE Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 1E-3 -5 10 -4 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 IDM, PEAK CURRENT (A) VGS = 10V TC = 25oC TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 175 - TC I = I25 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDI8442 Rev. A 4 www.fairchildsemi.com FDI8442 N-Channel PowerTrench® MOSFET Typical Characteristics 500 ID, DRAIN CURRENT (A) 1000 10us 100us 100 10 LIMITED BY PACKAGE 1ms 1 0.1 IAS, AVALANCHE CURRENT (A) 4000 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED o TC = 25 C 10ms 100 o STARTING TJ = 25 C 10 o STARTING TJ = 150 C 1 0.01 DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) 1000 5000 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area 160 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VGS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 160 Figure 6. Unclamped Inductive Switching Capability VDD = 5V 120 TJ = 175oC TJ = 25oC TJ = -55oC 40 0 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 40 TJ = 175oC 20 TJ = 25oC 10 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDI8442 Rev. A 40 VGS = 4V 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 8. Saturation Characteristics 50 0 VGS = 4.5V 80 0 5.0 Figure 7. Transfer Characteristics 30 VGS = 5V 120 80 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.8 1.6 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 80A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDI8442 N-Channel PowerTrench® MOSFET Typical Characteristics 1.10 VGS = VDS ID = 250μA 1.1 NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.2 1.0 0.9 0.8 0.7 0.6 0.5 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) Ciss 10000 Coss Crss f = 1MHz VGS = 0V 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 Figure 13. Capacitance vs Drain to Source Voltage FDI8442 Rev. A 1.00 0.95 0.90 -80 -40 0 40 80 120 160 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 40000 100 0.1 1.05 TJ, JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 1000 ID = 250μA 10 ID = 80A 8 VDD = 15V VDD = 20V 6 VDD = 25V 4 2 0 0 50 100 150 Qg, GATE CHARGE(nC) 200 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDI8442 N-Channel PowerTrench® MOSFET Typical Characteristics The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 FDI8442 Rev. A 7 www.fairchildsemi.com FDI8442 N-Channel PowerTrench® MOSFET TRADEMARKS