FDP3651U N-Channel PowerTrench® MOSFET 100V, 80A, 15mΩ Features Applications • rDS(on)=13 mΩ(Typ.), VGS = 10V, ID = 40A • DC/DC converters and Off-Line UPS • Qg(TOT)=49 nc(Typ.), VGS = 10 V • Distributed Power Architectures and VRMs • Low Miller Charge • Primary Switch for 24V and 48V Systems • Low Qrr Body Diode • High Voltage Synchronous Rectifier • UIS Capability (Single Pulse/Repetitive Pulse) DRAIN (FLANGE) SOURCE DRAIN GATE TO-220AB FDP SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter Ratings 100 Units V VGSS Gate to Source Voltage ±20 V Drain Current -Continuous ID 80 -Pulsed PD Power Dissipation EAS Single Pulsed Avalanche Energy TJ, TSTG Operating and Storage Temperature TL Maximum lead temperature soldering purposes, 1/8” from case for 5 seconds A (Note 1) 220 255 W (Note 2) 266 mJ -55 to 175 °C 300 °C 62 °C/W 0.59 °C/W Thermal Characteristics RθJA Thermal Resistance , Junction to Ambient RθJC Thermal Resistance , Junction to Case Package Marking and Ordering Information Device Marking FDP3651U Device FDP3651U ©2006 Fairchild Semiconductor Corporation FDP3651U Rev. A Reel Size Tube 1 Tape Width N/A Quantity 50 units www.fairchildsemi.com FDP3651U N-Channel PowerTrench® MOSFET July 2006 Symbol Parameter Test Conditions Min Typ Max Units 100 - - V - - 1 µA - - 250 µA - - ±100 nA V Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 80V VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V TC=150°C On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = -250µA 3.5 4.5 5.5 VGS = 10V , ID = 80A - 15 18 VGS = 10V , ID = 40A - 13 15 - 32 37 - 4152 5522 pF - 485 728 pF - 89 118 pF - 49 69 nC - 7 9.8 nC - 23 - nC - 16 - nC VGS=10V, ID=40A,TJ=175oC mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(TOT) Total Gate Charge VGS = 0V to 10V Qg(TH) Threshold Gate Charge VGS = 0V to 2V Qgs Gate to Source Gate Charge Qgd Gate to Drain Charge VDS = 25V,VGS = 0V f=1MHz VDD = 50V ID = 80A Resistive Switching Characteristics t(on) Turn-On Time - - 64 ns td(on) Turn-On Delay Time - 15 27 ns tr Rise Time - 16 29 ns td(off) Turn-Off Delay Time - 32 52 ns tf Fall Time - 14 26 ns t(off) Turn-Off Time - - 78 ns ISD = 80A - 0.99 1.25 V ISD = 40A - 0.88 1.0 V - 70 105 ns - 202 303 nC VDD = 50V, ID = 80A VGS = 10V, RGS = 5.0Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Is = 40 A, di/dt = 100A/µs Notes: 1. Pulse Test:Pulse Width<300us,Duty Cycle<2.0% 2. L=0.13mH, IAS = 64A, VDD=50V, RG=25 Ω , Starting TJ=25oC 2 FDP3651U Rev. A www.fairchildsemi.com FDP3651U N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 20V 100 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 120 VGS = 10V 80 VGS = 8V 60 40 VGS = 7V 20 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 4 VGS = 8V 3 2 VGS = 10V 1 VGS = 20V 0 0 40 60 80 100 120 60 2.4 RDS(on), ON-RESISTANCE (mΩ) ID = 80A VGS = 10V 2.0 1.6 1.2 0.8 0.4 -80 -40 0 40 80 120 160 ID = 80A 50 TJ = 175oC 30 20 TJ = 25oC 10 0 200 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 40 8 TJ, JUNCTION TEMPERATURE (oC) 10 12 14 16 18 20 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 1000 IS, REVERSE DRAIN CURRENT (A) 120 ID, DRAIN CURRENT (A) 20 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.8 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 100 80 TJ = 175oC 60 40 TJ = 25oC 20 TJ = -55oC 0 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 7V ID, DRAIN CURRENT(A) Figure 1. On Region Characteristics NORMALIZED DRAIN-SOURCE ON-RESISTANCE 5 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 100 TJ = 175oC 10 1 TJ = 25oC 0.1 TJ = -55oC 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 FDP3651U Rev. A VGS = 0V www.fairchildsemi.com FDP3651U N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 10000 VGS, GATE TO SOURCE VOLTAGE(V) 10 Ciss VDD = 45V VDD = 50V 8 CAPACITANCE (pF) VDD = 55V 6 4 2 0 Coss 1000 Crss 100 f = 1MHz VGS = 0V 0 10 20 30 40 50 10 0.1 60 Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 100 TJ = 25oC 10 TJ = 150oC 1 -3 10 -2 10 -1 0 1 2 100 PACKAGE MAY LIMIT CURRENT IN THIS REGION 80 VGS=10V 60 VGS=8V 40 20 0 25 3 10 10 10 10 tAV, TIME IN AVALANCHE(ms) 10 Figure 9. Unclamped Inductive Switching Capability 50 75 100 125 150 TC, CASE TEMPERATURE (oC) 175 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 5 500 10 P(PK), PEAK TRANSIENT POWER (W) 10us 100 ID, DRAIN CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 100 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) 10 100us 1ms 1 0.1 1 VDS, DRAIN TO SOURCE VOLTAGE (V) 10ms SINGLE PULSE TJ=MAX RATED Tc=25oC 1 DC 10 100 200 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 4 10 175 – T c ----------------------150 I = I25 3 10 SINGLE PULSE 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t, PULSE WIDTH (s) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation 4 FDP3651U Rev. A TC = 25oC VGS = 10V www.fairchildsemi.com FDP3651U N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJc x RθJc + Tc 1E-3 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 13. Transient Thermal Response Curve 5 FDP3651U Rev. A www.fairchildsemi.com FDP3651U N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20