FDB8876 N-Channel PowerTrench® MOSFET 30V, 71A, 8.5mΩ General Descriptions Features rDS(ON) = 8.5mΩ, VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3mΩ, VGS = 4.5V, ID = 40A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low rDS(ON) either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low Low gate charge rDS(ON) and fast switching speed. High power and current handling capability RoHS Compliant D GATE G SOURCE TO-263AB DRAIN (FLANGE) S FDB SERIES MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter Ratings 30 Units V VGS Gate to Source Voltage ±20 V Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 25oC, VGS = 4.5V) Pulsed EAS Single Pulse Avalanche Energy (Note 1) PD Power dissipation TJ, TSTG Operating and Storage Temperature 71 A 65 A Figure 4 A 180 mJ 70 W o -55 to 175 C Thermal Characteristics RθJC Thermal Resistance Junction to Case TO-263 RθJA Thermal Resistance Junction to Ambient TO-263,1in2copper pad area 2.14 43 oC/W o C/W Package Marking and Ordering Information Device Marking FDB8876 Device FDB8876 ©2005 Fairchild Semiconductor Corporation FDB8876 Rev. A Package TO-263AB 1 Reel Size 330mm Tape Width 24mm Quantity 800 units www.fairchildsemi.com FDB8876 N-Channel PowerTrench® MOSFET November 2005 Symbol Parameter Test Conditions Min Typ 30 - Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 24V VGS = 0V TA = 150oC VGS = ±20V - V 1 µA - - 250 - - ±100 nA V On Characteristics VGS(TH) rDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250µA 1.2 - 2.5 ID = 40A, VGS = 10V - 5.7 8.5 ID = 40A, VGS = 4.5V - 7.3 10.3 ID = 40, VGS = 10V, TA = 175oC - 11 14 - 1700 - pF - 340 - pF - 220 - pF mΩ Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance RG Gate Resistance VGS=0.5V, f = 1MHz - 2.1 - Ω Qg(TOT) Total Gate Charge at 10V - 32 45 nC Qg(5) Total Gate Charge at 5V Qg(TH) Threshold Gate Charge VGS = 0V to 10V V = 15V DD VGS = 0V to 5V ID = 40A V = 0V to 1V Ig = 1.0mA Qgs VDS = 15V, VGS = 0V, f = 1MHz - 17 24 nC - 1.6 2.4 nC Gate to Sourse Gate Charge - 4.7 - nC Qgs2 Gate Charge Threshold to Plateau - 3.1 - nC Qgd Gate to Drain “Miller” Charge - 6.8 - nC GS Switching Characteristics (VGS = 10V) tON Turn-On Time - - 183 ns td(ON) Turn-On Delay Time - 9 - ns tr Rise Time - 113 - ns td(OFF) Turn-Off Delay Time - 50 - ns tf Fall Time - 41 - ns tOFF Turn-Off Time - - 137 ns ISD = 40A - - 1.25 V ISD = 3.2A - - 1.0 V VDD = 15V, ID = 40A VGS = 10V, RGS = 10Ω Drain-Source Diode Characteristic VSD Source to Drain Diode Voltage trr Reverse Recovery Time ISD = 40A, dISD/dt=100A/µs - - 22 ns QRR Reverse Recovered Charge ISD = 40A, dISD/dt=100A/µs - - 8 nC Notes: 1: Starting TJ=25OC,L=1mH,IAS=19A,VDD=27V,VGS=10V 2 FDB8876 Rev. A www.fairchildsemi.com FDB8876 N-Channel PowerTrench® MOSFET Electrical Characteristics TA = 25°C unless otherwise noted 2.6 100 VGS=10V 60 RDS(ON), NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS=4.5V 80 ID,DRAIN DURRENT(A) TC=25oC VGS=3.5V 40 VGS=3V 20 PULSE DURATION=80µS DUTY CYCLE=0.5%MAX 0 0.0 0.5 1.0 1.5 2.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2.4 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 10 2.5 20 30 VDS,DRAIN TO SOURSE VOLTAGE(V) 60 70 80 0.016 ID = 40A VGS = 10V 1.4 1.2 1.0 0.8 0.6 -80 PULSE DURATION=80µS DUTY CYCLE=0.5%MAX -40 0 40 80 120 o TJ, JUNCTION TEMPERATURE ( C) 160 PULSE DURATION=80µS DUTY CYCLE=0.5%MAX RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.6 ID=40A 0.014 0.012 o TA = 125 C 0.010 0.008 0.006 200 o TA = 25 C 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-to-Source Votlage 100 160 PULSE DURATION = 80ms DUTY CYCLE = 0.5% MAX VDD = 15V VGS=0V IS, REVERSE DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 40 ID,DRAIN CURRENT Figure 1. On Region Characteristics 120 3v 3.5v 4v 4.5v 5v 10v 2.2 80 TJ = 175oC TJ = 25oC 40 TJ = -55oC 2.0 2.5 3.0 3.5 4.0 4.5 25oC 0.1 -25oC 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation With Source Current and Temperature 3 FDB8876 Rev. A 125oC 1 0.01 0.0 0 1.5 10 www.fairchildsemi.com FDB8876 N-Channel PowerTrench® MOSFET Typical Characteristics TA = 25°C unless otherwise noted 5000 VDD=15V CISS = CGS + CGD 8 C, CAPACITANCE (pF) VGS,GATE TO SOURCE VOLTAGE(V) 10 6 4 COSS ≅ CDS + CGD CRSS = CGD WAVEFORMS IN DESCENDING ORDER: ID=40A,ID=5A 2 0 1000 0 5 10 15 20 25 30 100 0.1 35 VGS = 0V, f = 1MHz 1 Figure 7. Gate Charge characteristics 1000 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 30 Figure 8. Saturation characteristics 100 10µs 100 STARTING TJ = 25oC 10 o STARTING TJ = 150 C If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1 0.001 0.01 0.1 1 10 100µs 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1ms 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 10ms DC 0.1 100 1 10 60 VDS, DRAIN TO SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Safe Operating Area 800 P(PK), PEAK TRANSIENT POWER (W) 80 ID, DRAIN CURRENT (A) 10 VDS , DRAIN TO SOURCE VOLTAGE (V) Qg,GATE CHARGE(nC) 60 VGS = 10V 40 VGS = 4.5V 20 SINGLE PULSE RθJC = 2.14oC/W TJ = 25oC 100 60 0 25 50 75 100 125 150 10-5 175 o 10-3 10-2 10-1 100 101 t, PULSE WIDTH (s) TC, CASE TEMPERATURE ( C) Figure 12. Normalized Drain to Source Breake Down Voltage vs Junction Temperature Figure 11. Maximum Continuous Drain Current vs Case Temperature 4 FDB8876 Rev. A 10-4 www.fairchildsemi.com FDB8876 N-Channel PowerTrench® MOSFET Typical Characteristics TA = 25°C unless otherwise noted Typical Characteristics TA = 25°C unless otherwise noted ZθJC, NORMALIZED THERMAL IMPEDANCE 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZqJC x RqJC + TC SINGLE PULSE 0.01 10-5 10-4 10-2 10-3 10-1 100 101 t, RECTANGULAR PULSE DURATION (s) Figure 13. Normolized Maximum Transient Thermal Impedance 5 FDB8876 Rev. A www.fairchildsemi.com FDB8876 N-Channel PowerTrench® MOSFET 2 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ EnSigna™ ImpliedDisconnect™ FACT™ IntelliMAX™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17