MITSUBISHI IGBT MODULES CM400HU-24H HIGH POWER SWITCHING USE INSULATED TYPE CM400HU-24H ● IC ................................................................... 400A ● VCES ....................................................... 1200V ● Insulated Type ● 1-element in a pack ● UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 4-φ6.5 MOUNTING HOLES 107 93 ±0.25 26 A B 20.5 24.35 E C 18 2-M4NUTS CM 2-M8NUTS TC measured point 6 NUTS A M8 (6.8) M4 (3.2) B (7.2) (4) C (14) (7.2) 23 +1 23 4 34 –0.5 6.5 +1 CIRCUIT DIAGRAM G E 9 26 –0.5 G C 29 21.15 17.2 62 48 ±0.25 10 9.5 19.1 (7) 13.5 C 12.55 (7) E E LABEL Feb. 2009 1 MITSUBISHI IGBT MODULES CM400HU-24H HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified.) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Mounting torque — Weight Conditions VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C (Note 1) (Note 1) — — Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M8 screw Mounting M6 screw Auxiliary terminals M4 screw Typical value Ratings Unit 1200 ±20 400 800 400 800 2100 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 450 V V A A A A W °C °C Vrms N·m N·m N·m g ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified.) Symbol Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage t rr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Rth(c-f) Contact thermal resistance ICES Note 1. 2. 3. 4. 5. 6. VCE = VCES, VGE = 0V Min — Limits Typ — Max 2 IC = 40mA, VCE = 10V 4.5 6 7.5 V — — — — — — — — — — — — — — — — — — 2.9 2.85 — — — 1500 — — — — — — 2.2 — — 0.02 0.5 3.7 — 60 21 12 — 250 350 350 350 3.2 300 — 0.06 0.09 — µA Item Test Conditions ±VGE = VGES, VCE = 0V IC = 400A, VGE = 15V (Note 4) Tj = 25°C Tj = 125°C VCE = 10V VGE = 0V VCC = 600V, IC = 400A, VGE = 15V VCC = 600V, IC = 400A VGE = ±15V RG = 0.78Ω Resistive load IE = 400A, VGE = 0V IE = 400A, die / dt = –800A / µs Junction to case, IGBT part Junction to case, FWDi part Case to heat sink, conductive grease applied (Note 6) Unit mA V nF nF nF nC ns ns ns ns V ns µC K/W K/W K/W Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, IEM, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM400HU-24H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) 11 400 10 200 9 8 0 1 2 3 4 5 6 7 8 600 400 200 Tj = 25°C Tj = 125°C 0 9 10 0 2 4 6 8 10 12 14 16 18 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE = 10V 12 600 0 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 3 2 EMITTER CURRENT IE (A) 800 15 VGE = 20 (V) Tj = 25°C 0 200 400 600 8 IC = 800A 7 6 IC = 400A 5 4 3 2 IC = 160A 1 0 2 4 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 5 Tj = 25°C 7 5 3 2 102 7 5 1.0 Tj = 25°C 9 COLLECTOR CURRENT IC (A) 103 3 10 0 800 CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR CURRENT IC (A) 800 1.5 2.0 2.5 3.0 3.5 3 2 VGE = 0V 102 7 5 3 2 Cies 101 7 5 3 2 100 7 5 Coes Cres 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM400HU-24H HIGH POWER SWITCHING USE INSULATED TYPE 103 2 td(on) 102 7 5 VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C 3 tr 101 1 10 2 3 5 7 102 2 3 2 5 lrr 3 2 2 102 101 7 5 7 5 3 3 2 2 2 3 5 7 102 100 2 3 5 7 103 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) Per unit base = Rth(j – c) = 0.06K/W 7 5 3 2 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) 3 trr COLLECTOR CURRENT IC (A) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 100 5 101 1 10 5 7 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) SWITCHING TIMES (ns) tf 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) REVERSE RECOVERY TIME trr (ns) td(off) 7 5 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 102 –di/dt = 800A/µs 7 7 Tj = 25°C REVERSE RECOVERY CURRENT Irr (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 100 Per unit base = Rth(j – c) = 0.09K/W 7 5 3 2 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 400A VCC = 400V 15 VCC = 600V 10 5 0 0 400 800 1200 1600 2000 GATE CHARGE QG (nC) Feb. 2009 4