MITSUBISHI IGBT MODULES CM150E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE CM150E3U-24H ● IC ................................................................... 150A ● VCES ....................................................... 1200V ● Insulated Type ● 1-element in a pack APPLICATION Brake OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm TC measured point 108 93 ±0.25 48 ±0.25 6 E2 G2 14 CM 62 14 E2 G2 14 C2E1 E2 C1 CIRCUIT DIAGRAM C2E1 C1 E2 25 25 21.5 2.5 3-M6 NUTS 4-φ6.5 MOUTING HOLES 0.5 4 18 7 18 LABEL 4 22 29 +1.0 –0.5 0.5 2.8 8.5 7 7.5 18 Feb. 2009 1 MITSUBISHI IGBT MODULES CM150E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso (Tj = 25°C, unless otherwise specified) Item Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Mounting torque — Weight ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R VFM trr Qrr Rth(j-c) Rth(c-f) Note 1. 2. 3. 4. 5. 6. Conditions Collector-emitter voltage Gate-emitter voltage VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C (Note 1) (Note 1) — — Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Ratings Unit 1200 ±20 150 300 150 300 890 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 V V A A A A W °C °C Vrms N·m N·m g (Tj = 25°C, unless otherwise specified) VCE = VCES, VGE = 0V Min — Limits Typ — Max 1 IC = 15mA, VCE = 10V 4.5 6 7.5 V — — — — — — — — — — — — — — — — — — — — — 2.9 2.85 — — — 560 — — — — — — 0.82 — — — — 0.82 — 0.5 3.7 — 22 7.4 4.4 — 200 250 300 350 3.2 300 — 0.14 0.24 3.2 300 — 0.24 µA nF nF nF nC ns ns ns ns V ns µC K/W K/W V ns µC K/W — 0.04 — K/W Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Test Conditions ±VGE = VGES, VCE = 0V IC = 150A, VGE = 15V (Note 4) Tj = 25°C Tj = 125°C VCE = 10V VGE = 0V VCC = 600V, IC = 150A, VGE = 15V VCC = 600V, IC = 150A VGE = ±15V RG = 2.1Ω Resistive load IE = 150A, VGE = 0V IE = 150A die / dt = –300A / µs Junction to case, IGBT part Thermal resistance (Note 5) Junction to case, FWDi part Forward voltage IF = 150A, Clamp diode part Reverse recovery time IF = 150A Reverse recovery charge dif / dt = –300A / µs, Clamp diode part Thermal resistance (Note 5) Junction to case, Clamp diode part Case to heat sink, conductive grease applied Contact thermal resistance (Per 1/2 module) (Note 6) Unit mA V Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM150E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 300 15 VCE = 10V COLLECTOR CURRENT IC (A) 12 250 Tj = 25°C 11 200 150 10 100 9 50 8 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE = 20 (V) 0 2 4 6 8 200 150 100 50 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 50 100 150 200 250 8 6 IC = 300A 4 IC = 150A IC = 60A 2 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 102 Tj = 25°C 3 2 102 7 5 3 2 101 1.0 Tj = 25°C COLLECTOR CURRENT IC (A) CAPACITANCE Cies, Coes, Cres (nF) 7 5 10 0 300 103 EMITTER CURRENT IE (A) 250 0 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (A) 300 7 5 VGE = 0V 3 2 101 Cies 7 5 3 2 Coes 100 7 5 Cres 3 2 3.5 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 1.5 2.0 2.5 3.0 Feb. 2009 3 MITSUBISHI IGBT MODULES CM150E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE tf 3 2 td(off) td(on) 102 7 5 tr 3 2 101 7 5 Tj = 125°C VCC = 600V VGE = ±15V RG = 2.1Ω 3 2 100 1 10 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) REVERSE RECOVERY TIME trr (ns) 7 5 2 3 5 7 102 2 3 2 5 3 3 2 2 trr 102 102 7 5 7 5 3 3 2 2 Irr 2 3 5 7 102 101 2 3 5 7 103 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C Per unit base = Rth(j – c) = 0.14K/W 100 5 101 1 10 5 7 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) SWITCHING TIMES (ns) 103 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 103 – di /dt = 300A /µs 7 7 Tj = 25°C 7 5 3 2 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) REVERSE RECOVERY CURRENT Irr (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 100 Per unit base = Rth(j – c) = 0.24K/W 7 5 3 2 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 150A VCC = 400V 15 VCC = 600V 10 5 0 0 200 400 600 800 GATE CHARGE QG (nC) Feb. 2009 4