MITSUBISHI IGBT MODULES CM600HN-5F HIGH POWER SWITCHING USE INSULATED TYPE CM600HN-5F ● IC ................................................................... 600A ● VCES .......................................................... 250V ● Insulated Type ● 1-element in a pack ● UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, Forklift OUTLINE DRAWING & CIRCUIT DIAGRAM (6) 24 (7.9) 20 Dimensions in mm 29 (16) 17.5 7.5 4–φ6.5 MOUNTING HOLES E T (10) (10) (13) (9) T 20 E E 48 ±0.25 62 E C G CIRCUIT DIAGRAM C G 93 ±0.25 108 2–M6 NUTS (8.5) LABEL +1 36 -0.5 +1 25.8 -0.5 2–M4 NUTS Mar. 2009 MITSUBISHI IGBT MODULES CM600HN-5F HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Mounting torque — Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C (Note 2) (Note 2) — — Charged part to base plate, sinusoidal, AC 60Hz 1min. Main terminals M6 screw Mounting M6 screw G(E) auxiliary terminal M4 screw Typical value Ratings Unit 250 ±20 600 1200 600 1200 1780 –40 ~ +150 –40 ~ +125 2500 1.96 ~ 2.94 1.96 ~ 2.94 0.98 ~ 1.47 400 V V A A A A W °C °C Vrms N·m N·m N·m g ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Item Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 1) Emitter-collector voltage trr (Note 1) Reverse recovery time Q rr (Note 1) Reverse recovery charge Rth(j-c)Q Thermal resistance Rth(j-c)R Rth(c-f) Contact thermal resistance ICES Note 1. 2. 3. 4. Test Conditions Limits Typ — Max 1 Unit VCE = VCES, VGE = 0V Min — IC = 60mA, VCE = 10V 3 4 5 V VGE = VGES, VCE = 0V Tj = 25°C IC = 600A, VGE = 10V Tj = 150°C — — — — — — — — — — — — — — — — — — 1.2 1.1 — — — 2200 — — — — — — 9.5 — — — 0.5 1.7 — 165 7.5 5.6 — 1000 4000 1000 500 2.0 300 — 0.07 0.11 0.04 µA VCE = 10V VGE = 0V VCC = 100V, IC = 600A, VGE = 10V VCC = 100V, IC = 600A VGE1 = VGE2 = 10V RG = 4.2Ω Resistive load IE = 600A, VGE = 0V IE = 600A, die / dt = –1200A / µs Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied (Note 4) mA V nF nF nF nC ns ns ns ns V ns µC K/W K/W K/W IE , VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Mar. 2009 2 MITSUBISHI IGBT MODULES CM600HN-5F HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 6 VCE = 10V 8 VGE=15 (V) 800 1200 5.75 COLLECTOR CURRENT IC (A) 1000 5.5 600 5.25 400 5 200 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) Tj=25°C 10 4.75 4.5 0 1 2 3 4 800 600 400 200 Tj = 25°C Tj = 125°C 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 2.5 VGE = 10V Tj = 25°C Tj = 125°C 2.0 1.5 1.0 0.5 0 0 200 400 600 800 5 Tj = 25°C 4 IC = 1200A 3 IC = 600A 2 1 IC = 240A 0 0 1000 1200 5 10 15 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 104 103 CAPACITANCE Cies, Coes, Cres (nF) 7 Tj = 25°C 5 EMITTER CURRENT IE (A) 1000 0 5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (A) 1200 3 2 103 7 5 3 2 102 7 5 3 2 7 VGE = 0V 5 3 2 Cies 102 7 5 3 2 101 7 5 Coes 3 2 1.8 Cres 100 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 101 0.6 0.8 1.0 1.2 1.4 1.6 Mar. 2009 3 MITSUBISHI IGBT MODULES CM600HN-5F HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 104 SWITCHING TIME (ns) 3 REVERSE RECOVERY TIME trr (ns) VCC = 100V VGE = ±10V RG = 4.2Ω Tj = 125°C 7 5 2 td(off) td(on) 103 7 5 tf 3 2 tr 102 1 10 2 3 5 7 102 2 3 5 3 3 2 trr 2 102 lrr 102 7 5 7 5 3 3 2 2 2 3 5 7 102 101 2 3 5 7 103 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 101 7 Single Pulse 5 3 TC = 25°C 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 5 101 1 10 5 7 103 101 Per unit base = Rth(j – c) = 0.07K/ W 100 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 103 –di/dt = 1200A/µs 7 7 Tj = 25°C REVERSE RECOVERY CURRENT Irr (A) HIGH POWER SWITCHING USE INSULATED TYPE 7 5 3 2 10–1 7 5 3 2 10–2 7 5 3 2 10–3 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 710–0 2 3 5 7 101 7 Single Pulse 5 3 TC = 25°C 2 100 Per unit base = Rth(j – c) = 0.11K/ W 7 5 3 2 10–1 7 5 3 2 10–2 7 5 3 2 10–3 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 710–0 2 3 5 7 101 TIME (s) TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 25 IC = 600A 20 VCC = 50V 15 VCC = 100V 10 5 0 0 1 2 3 4 5 6 GATE CHARGE QG (µC) Mar. 2009 4