MITSUBISHI IGBT MODULES CM75E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE CM75E3U-24H ● IC ..................................................................... 75A ● VCES ....................................................... 1200V ● Insulated Type ● 1-element in a pack APPLICATION Brake OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm TC measured point 94 E2 C1 13 48 CM C2E1 4 23 4 11 23 E2 G2 17 24 2–φ6.5 MOUNTING HOLES 80 ±0.25 7 12 13.5 3-M5 NUTS 12mm deep 2.5 16 TAB #110. t = 0.5 E2 G2 25 7.5 16 2.5 E2 C1 21.2 30 +1 -0.5 C2E1 LABEL CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM75E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso (Tj = 25°C, unless otherwise specified) Item Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Mounting torque — Weight ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R VFM trr Qrr Rth(j-c) Rth(c-f) Note 1. 2. 3. 4. 5. 6. Conditions Collector-emitter voltage Gate-emitter voltage VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C (Note 1) (Note 1) — — Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value Ratings Unit 1200 ±20 75 150 75 150 600 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 V V A A A A W °C °C Vrms N·m N·m g (Tj = 25°C, unless otherwise specified) VCE = VCES, VGE = 0V Min — Limits Typ — Max 1 IC = 7.5mA, VCE = 10V 4.5 6 7.5 V — — — — — — — — — — — — — — — — — — — — — 2.9 2.85 — — — 280 — — — — — — 0.41 — — — — 0.41 — 0.5 3.7 — 11 3.7 2.2 — 100 200 250 350 3.2 300 — 0.21 0.47 3.2 300 — 0.47 µA nF nF nF nC ns ns ns ns V ns µC K/W K/W V ns µC K/W — 0.07 — K/W Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Test Conditions ±VGE = VGES, VCE = 0V IC = 75A, VGE = 15V (Note 4) Tj = 25°C Tj = 125°C VCE = 10V VGE = 0V VCC = 600V, IC = 75A, VGE = 15V VCC = 600V, IC = 75A VGE = ±15V RG = 4.2Ω Resistive load IE = 75A, VGE = 0V IE = 75A die / dt = –150A / µs Junction to case, IGBT part Thermal resistance (Note 5) Junction to case, FWDi part Forward voltage IF = 75A, Clamp diode part Reverse recovery time IF = 75A Reverse recovery charge dif / dt = –150A / µs, Clamp diode part Thermal resistance (Note 5) Junction to case, Clamp diode part Case to heat sink, conductive grease applied Contact thermal resistance (Per 1/2 module) (Note 6) Unit mA V Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM75E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VCE = 10V COLLECTOR CURRENT IC (A) 12 11 100 75 10 50 9 25 8 0 2 4 6 8 125 100 75 50 25 0 10 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 150 15 125 Tj = 25°C 0 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 7 5 EMITTER CURRENT IE (A) VGE = 20 (V) 25 0 50 75 100 125 10 Tj = 25°C 8 6 IC = 150A 4 IC = 75A IC = 30A 2 0 150 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 102 Tj = 25°C CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR CURRENT IC (A) 150 3 2 102 7 5 3 2 101 7 5 3 2 101 7 5 Cies 3 2 100 Coes 7 5 3 2 Cres VGE = 0V 3.5 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 7 1.0 1.5 2.0 2.5 3.0 Feb. 2009 3 MITSUBISHI IGBT MODULES CM75E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE 103 td(off) 102 7 5 td(on) 3 2 tr 101 7 5 VCC = 600V VGE = ±15V RG = 4.2Ω 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 100 0 10 2 3 5 7 101 2 3 2 5 3 3 2 2 trr 102 Irr 7 5 3 2 2 3 5 7 101 100 2 3 5 7 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) Per unit base = Rth(j – c) = 0.21K/W 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) 7 5 2 EMITTER CURRENT IE (A) 7 5 3 2 101 3 COLLECTOR CURRENT IC (A) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 100 5 101 0 10 5 7 102 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) SWITCHING TIMES (ns) 3 2 REVERSE RECOVERY TIME trr (ns) tf 7 Tj = 125°C 5 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 102 – di /dt = 150A /µs 7 7 Tj = 25°C REVERSE RECOVERY CURRENT Irr (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 100 Per unit base = Rth(j – c) = 0.47K/W 7 5 3 2 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 75A VCC = 400V 15 VCC = 600V 10 5 0 0 100 200 300 400 GATE CHARGE QG (nC) Feb. 2009 4