MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE CM900DU-24NF ● IC ................................................................... 900A ● VCES .......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION UPS & General purpose inverters, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm A,B HOUSING Type (J. S. T. Mfg. Co. Ltd) A : VHR-2N B : VHR-5N 150 137.5±0.25 42 14 14 Tc measured point (The side of Cu 12 2 base plate) 34.6 +1.0 –0.5 4 E1 PPS 10.5 E2 E2 18 15.7 5.5 C1 L A B E L 34.6 +1.0 –0.5 E2 G2 1.9 ±0.2 14 14 14 14 14 14 42 42 25.1 9-M6 NUTS 12 C2 C2E1 E2 C1 C1 G1 E1 8-f6.5 MOUNTING HOLES G1 G2 B 129.5 166 C1 C2E1 C2 A 21 11 19 38±0.25 42.5±0.25 38±0.25 74±0.25 74±0.25 15.7 Tc measured point (The side of Cu base plate) CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature*4 Isolation voltage — Torque strength — Weight Conditions G-E Short C-E Short TC’ = 96°C*1 Pulse TC = 25°C Pulse TC = 25°C Ratings 1200 ±20 900 1800 900 1800 2550 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 1400 (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Unit V V A A W °C °C Vrms N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Parameter Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 90mA, VCE = 10V 6 7 8 V IGES Gate leakage current ±VGE = VGES, VCE = 0V (chip) Collector-emitter saturation voltage (without lead resistance) R(lead) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) Module lead resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge — — — — — — — — — — — — — — — 1.8 2.0 0.286 — — — 4800 — — — — — 50 1 2.5 — — 140 16 3 — 600 200 800 300 500 — µA VCE(sat) VEC(Note 1) (chip) Emitter-collector voltage (without lead resistance) — — 3.2 — — — — — 0.35 — — 0.016 — — — 0.049 0.078 — 0.021 0.034 2.2 Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Rth(j-c’)R RG Thermal resistance*3 Contact thermal resistance*2 Thermal resistance*1 IC = 900A, VGE = 15V (Note 4) Tj = 25°C Tj = 125°C Ic = 900A, terminal-chip VCE = 10V VGE = 0V VCC = 600V, IC = 900A, VGE = 15V VCC = 600V, IC = 900A VGE = ±15V RG = 0.35Ω, Inductive load IE = 900A IE = 900A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied (1/2 module) Case temperature measured point is just under the chips (IGBT part) Case temperature measured point is just under the chips (FWDi part) External gate resistance mA V mΩ nF nC ns ns µC V K/W Ω Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc’) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING. *4 : The operation temperature is restrained by the permission temperature of female connector. Feb. 2009 2 MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGE = 20V 1400 1000 11V 800 600 10V 400 8V 200 0 2 4 6 9V 8 1400 1200 1000 800 600 400 0 10 Tj = 25°C Tj = 125°C 200 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 10 VGE = 15V COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 12V 1200 0 4 3 2 1 Tj = 25°C Tj = 125°C 0 0 104 EMITTER CURRENT IE (A) VCE = 10V 1600 15V 13V COLLECTOR CURRENT (A) 1600 1800 Tj = 25°C 200 400 600 800 1000 1200 1400 1600 1800 8 6 IC = 900A 4 IC = 1800A 2 IC = 360A 0 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 20 103 7 5 3 2 103 7 5 3 2 102 Tj = 25°C COLLECTOR CURRENT IC (A) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR CURRENT IC (A) 1800 Tj = 25°C Tj = 125°C 0 1 2 3 4 7 5 3 2 102 Cies 7 5 3 2 101 7 5 3 2 100 Coes Cres 7 5 3 2 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE 103 td(off) 7 5 SWITCHING TIMES (ns) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) tf td(on) 3 2 102 7 Conditions: 5 VCC = 600V tr 3 VGE = ±15V RG = 0.35Ω 2 Tj = 125°C Inductive load 101 1 10 2 3 5 7 102 2 3 5 7 103 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 Irr 3 trr 2 102 7 5 3 2 101 1 10 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) 3 2 10–1 7 5 3 2 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 TC measured 3 point is just 2 under the chips 7 5 3 2 5 7 103 3 VCC = 400V 16 VCC = 600V 12 8 4 0 1000 2000 3000 4000 5000 6000 7000 TIME (s) GATE CHARGE QG (nC) IC-ESW (TYPICAL) RG-ESW (TYPICAL) 103 7 Conditions: 5 VCC = 600V 7 5 3 VGE = ±15V 2 Tj = 125°C Eon, Eoff, Err (mJ/pulse) Eon, Eoff, Err (mJ/pulse) 2 IC = 900A 0 103 Eon 102 RG = 0.35Ω 7 Inductive load 5 Err 3 2 Eoff 101 7 5 3 2 100 1 10 5 7 102 20 7 5 3 2 7 5 3 2 3 GATE CHARGE CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 10–1 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) Single Pulse IGBT part: Per unit base = Rth(j–c’) = 0.021K/ W FWDi part: Per unit base = Rth(j–c’) = 0.034K/ W 0 10 7 5 3 2 Conditions: VCC = 600V VGE = ±15V RG = 0.35Ω Tj = 25°C Inductive load 2 3 5 7 102 2 3 5 7 103 3 Eon 2 102 Eoff 7 5 Conditions: VCC = 600V 3 VGE = ±15V Tj = 125°C 2 IC = 900A Inductive load 101 0 0.5 1 Err 1.5 2 2.5 RG (Ω) IC (A) Feb. 2009 4