MITSUBISHI IGBT MODULES CM300DY-12NF HIGH POWER SWITCHING USE CM300DY-12NF ¡IC ................................................................... 300A ¡VCES ............................................................ 600V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point (Base plate) 94 23 23 17 C1 12 12 G1 E1 12 2-φ6.5 MOUNTING HOLES 4 13 48 20 (14) E2 18 C2E1 E2 G2 4 17 3-M5 NUTS 4 80±0.25 7 16 C2E1 E2 21.2 29 +0.1 –0.5 LABEL C1 G1 E1 16 7.5 7 E2 G2 TAB #110. t=0.5 16 CIRCUIT DIAGRAM Mar.2003 MITSUBISHI IGBT MODULES CM300DY-12NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditions G-E Short C-E Short DC, TC’ = 89°C*3 Pulse Ratings 600 ±20 300 600 300 600 780 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 (Note 2) Pulse TC = 25°C (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M6 Typical value Unit V V A A A A W °C °C V N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Parameter Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 30mA, VCE = 10V 5 6 7.5 V IGES Gate leakage current Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage — — — — — — — — — — — — — — — — — — 2.1 — 1.7 1.7 — — — 1200 — — — — — 5.5 — — — 0.07 — — 0.5 2.2 — 45 5.5 1.8 — 120 120 350 300 150 — 2.6 0.16 0.25 — µA VCE(sat) VGE = VGES, VCE = 0V Tj = 25°C IC = 300A, VGE = 15V Tj = 125°C Thermal resistance*1 Contact thermal resistance Thermal resistance VCE = 10V VGE = 0V VCC = 300V, IC = 300A, VGE = 15V VCC = 300V, IC = 300A VGE1 = VGE2 = 15V RG = 2.1Ω, Inductive load switching operation IE = 300A IE = 300A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied*2 (1/2 module) Tc measured point is just under the chips External gate resistance 0.093*3 21 mA V nF nF nF nC ns ns ns ns ns µC V °C/W °C/W °C/W °C/W Ω *1 : Tc measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : Tc’ measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. Mar.2003 MITSUBISHI IGBT MODULES CM300DY-12NF HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = 25°C 13 500 12 400 300 11 200 10 100 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 15 VGE = 20V 8 2 0 4 6 9 8 10 VGE = 15V 3 2 1 Tj = 25°C Tj = 125°C 0 0 200 100 300 400 500 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 7 8 6 4 IC = 300A IC = 600A 2 5 3 2 102 7 5 3 2 Tj = 25°C Tj = 125°C IC = 120A 0 6 8 10 12 14 16 18 101 20 3 2 0 1 2 3 4 5 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Cies 101 7 5 3 2 Coes 100 Cres 7 5 3 2 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) SWITCHING TIME (ns) 7 5 600 103 Tj = 25°C 102 CAPACITANCE Cies, Coes, Cres (nF) 4 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) COLLECTOR CURRENT IC (A) 600 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) 7 5 3 2 tf td(off) 102 td(on) tr 7 5 3 2 Conditions: VCC = 300V VGE = ±15V RG = 2.1Ω Tj = 125°C Inductive load 101 7 5 3 2 100 1 10 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Mar.2003 MITSUBISHI IGBT MODULES CM300DY-12NF TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 2 102 Irr 7 5 trr 3 2 101 1 10 2 3 5 7 102 Conditions: VCC = 300V VGE = ±15V RG = 2.1Ω Tj = 25°C Inductive load 2 3 5 7 103 EMITTER CURRENT IE (A) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HIGH POWER SWITCHING USE 7 5 3 2 Single Pulse TC = 25°C 10–1 10–1 7 5 3 2 7 5 3 2 IGBT part: 10–2 Per unit base = 7 5 Rth(j–c) = 0.16°C/W FWDi part: 3 Per unit base = 2 Rth(j–c) = 0.25°C/W –3 10 10–2 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 300A 16 VCC = 200V 12 VCC = 300V 8 4 0 0 200 400 800 1200 1600 600 1000 1400 GATE CHARGE QG (nC) Mar.2003